Page 1
r
r
Elektronische Bauelemente
RoHS Compliant Product
A suffix of “-C” specifies halogen and lead-free
DESCRIPTION
These miniature surface mount MOSFETs utilize
a High Cell Density trench process to provide Low R
DS(on)
and to ensure minimal power loss and heat dissipation.
Typical applications are DC-DC converters and power
management in portable and battery-powered products
such as computers, printers, PCMCIA cards, cellular
and cordless telephones.
FEATURES
Low R
battery life
Low thermal impedance copper leadframe TSOP-6
saves board space
Fast switching speed
High performance trench technology
provides higher efficiency and extend
DS(on)
PACKAGE INFORMATION
STT3470N
2.2 A, 100 V, R
N-Channel Enhancement Mode Mos.FET
A
D G
E
5
6
1
23
F
REF.
Min. Max. Min. Max.
A 2.70 3.10 G 0 0.10
B 2.60 3.00 H 0.60 REF.
C 1.40 1.80 J 0.12 REF.
D1.10 MAX. K 0° 10°
E 1.90 REF. L 0.95 REF.
F 0.30 0.50
DS(ON)
4
Millimete
280 m
TSOP-6
L
B
K
REF.
HC
J
Millimete
Package MPQ LeaderSize
TSOP-6 3K 7’ inch
D
D
G
ABSOLUTE MAXIMUM RATINGS (T
Parameter Symbol Ratings Unit
Drain-Source Voltage V
Gate-Source Voltage V
Continuous Drain Current 1 T
Pulsed Drain Current
Continuous Source Current (Diode Conduction) 1 I
Power Dissipation 1 T
Operating Junction and Storage Temperature Range Tj, Tstg -55 ~ 150 °C
2
I
= 25°C unless otherwise specified)
A
100 V
DS
±20 V
GS
= 25°C I
A
= 25°C P
A
2.2 A
D
±10 A
DM
1.1 A
S
2 W
D
Thermal Resistance Ratings
Parameter Symbol Typ. Max. Unit
Maximum Junction to Ambient 1
t ≦ 10 sec
Steady State 130 150
R
JA
93 110
Notes
1. Surface Mounted on 1” x 1” FR4 Board.
2. Pulse width limited by maximum junction temperature.
D
D
S
°C / W
http://www.SeCoSGmbH.com/ Any changes of specification will not be informed individually.
30-Dec-2010 Rev. A Page 1 of 2
Page 2
Elektronische Bauelemente
ELECTRICAL CHARACTERISTICS (T
Parameter Symbol Min. Typ. Max. Unit Test Conditions
N-Channel Enhancement Mode Mos.FET
= 25°C unless otherwise specified)
A
STT3470N
2.2 A, 100 V, R
DS(ON)
280 m
Gate-Threshold Voltage V
Gate-Body Leakage I
Zero Gate Voltage Drain Current I
On-State Drain Current 1 I
Drain-Source On-Resistance 1 R
GS(th)
- - ±100 nA VDS= 0V, VGS= ±8V
GSS
DSS
10 - - A V
D(on)
DS(ON)
1 - - V VDS=VGS, ID= 250uA
- - 1
VDS= 80V, VGS= 0V
A
- - 10
- - 280
mΩ
= 80V, VGS= 0V, T
V
DS
5V, VGS= 10V
DS =
= 10V, ID= 2.2A
V
GS
- - 355 VGS= 5.5V, ID= 2A
Forward Transconductance 1 g
fs
- 11.3 - S VDS= 10V, ID= 2.2A
Diode Forward Voltage VSD - 0.75 - V IS= 1.6A, VGS= 0V
Dynamic
2
Total Gate Charge Qg - 7.0 -
= 10V, VGS= 5.5V,
V
Gate-Source Charge Qgs - 1.1 -
Gate-Drain Charge Q
- 20 -
gd
nC
DS
I
= 2.2A
D
= 55°C
J
Turn-on Delay Time T
- 8 -
d(on)
Rise Time Tr - 24 -
Turn-off Delay Time T
- 35 -
d(off)
Fall Time Tf - 10 -
Notes：
1. Pulse test：PW ≦ 300 us duty cycle ≦ 2%.
2. Guaranteed by design, not subject to production testing.
nS
= 10V, V
V
DD
R
= 15, ID= 1A
L
GEN
= 4.5V,
http://www.SeCoSGmbH.com/ Any changes of specification will not be informed individually.
30-Dec-2010 Rev. A Page 2 of 2
Loading...