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STT3463P
-3 A, -60 V, R
Elektronische Bauelemente
P-Channel Enhancement Mode MOSFET
RoHS Compliant Product
A suffix of “-C” specifies halogen and lead-free
DS(ON)
155 m
DESCRIPTION
These miniature surface mount MOSFETs utilize
a high cell density process. Low R
assures minimal
DS(on)
power loss and conserves energy, making this device
ideal for use in power management circuitry.
FEATURES
Low R
battery life.
Miniature TSOP-6 surface mount package saves
board space.
High power and current handling capability.
Extended V
applications.
provides higher efficiency and extends
DS(on)
range (±25) for battery pack
GS
APPLICATION
PWMDC-DC converters, power management
in portable and battery-powered products such as computers,
printers, battery charger, telecommunication power system,
and telephones power system.
PACKAGE INFORMATION
Package MPQ Leader Size
TSOP-6
A
E
L
5
6
4
B
1
23
F
D G
Millimeter
REF.
Min. Max. Min. Max.
A 2.70 3.10 G 0 0.10
B 2.60 3.00 H 0.60 REF.
C 1.40 1.80 J 0.12 REF.
D1.10 MAX. K 0° 10°
E 1.90 REF. L 0.95 REF.
F0.30 0.50
D
DD
K
REF.
Millimete
HC
J
D
TSOP-6 3K 7’ inch
ABSOLUTE MAXIMUM RATINGS (T
Parameter Symbol Ratings Unit
Drain-Source Voltage V
Gate-Source Voltage V
Continuous Drain Current 1
Pulsed Drain Current
Continuous Source Current (Diode Conduction) 1 I
Power Dissipation 1
Operating Junction and Storage Temperature Range Tj, Tstg
Maximum Junction to Ambient 1 t ≦ 5 sec R
Notes:
1. Surface Mounted on 1” x 1” FR4 Board.
2. Pulse width limited by maximum junction temperature.
2
I
=25°C unless otherwise specified)
A
= 25°C
T
A
TA= 70°C
= 25°C
T
A
TA= 70°C
Thermal Resistance Ratings
G
DS
GS
-60
±20
-3.0
ID
DM
-1.7 A
S
-2.4
-15
2.0
P
D
1.3
-55 ~ 150
62.5
JA
110
S
V
V
A
A
W
°C
°C / W
http://www.SeCoSGmbH.com/ Any changes of specification will not be informed individually.
08-Apr-2011 Rev. A Page 1 of 2
Page 2
Elektronische Bauelemente
ELECTRICAL CHARACTERISTICS (T
Parameter Symbol Min. Typ. Max.
P-Channel Enhancement Mode MOSFET
= 25°C unless otherwise specified)
A
Static
STT3463P
-3 A, -60 V, R
Unit Test Conditions
DS(ON)
155 m
Gate-Threshold Voltage V
Gate-Body Leakage I
Zero Gate Voltage Drain Current I
On-State Drain Current 1 I
Drain-Source On-Resistance 1 R
Forward Transconductance 1 g
Diode Forward Voltage VSD - - -1.2 V IS= -2.5A, VGS=0
Total Gate Charge Qg - 18 -
Gate-Source Charge Qgs - 5 -
Gate-Drain Charge Q
Turn-on Delay Time T
Rise Time Tr - 10 -
Turn-off Delay Time T
Fall Time Tf - 12 -
Notes:
1. Pulse test：PW ≦ 300 us duty cycle ≦ 2%.
2. Guaranteed by design, not subject to production testing.
GS(th)
- - ±100 nA VDS=0, VGS= ±20V
GSS
DSS
-20 - - A V
D(on)
DS(ON)
fs
- 2 -
gd
d(on)
d(off)
-1 - - V VDS= VGS, ID= -250μA
- - -1
- - -10 VDS= -48V, VGS=0, T
- - 155
- - 230 VGS= -4.5V, ID= -2.5A
- 8 - S VDS= -15V, ID= -3.0A
Dynamic
- 8 -
- 35 -
2
VDS= -48V, VGS=0
μA
V
mΩ
V
V
nC
I
D
V
V
nS
R
I
D
R
-5V, VGS= -10V
DS =
= -10V, ID= -3A
GS
= -30V,
DS
= -4.5V,
GS
= -3A
= -30V,
DD
= -10V,
GEN
=30Ω,
L
= -1A,
=6Ω
G
= 55°C
J
http://www.SeCoSGmbH.com/ Any changes of specification will not be informed individually.
08-Apr-2011 Rev. A Page 2 of 2
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