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STT3458N
3.4A , 60V , R
Elektronische Bauelemente
N-Channel Enhancement Mode Mos.FET
RoHS Compliant Product
A suffix of “-C” specifies halogen and lead-free
DS(ON)
92 m
DESCRIPTION
These miniature surface mount MOSFETs utilize
High Cell Density process. Low R
assures minimal
DS(on)
power loss and conserves energy, making this device
ideal for use in power management circuitry.
FEATURES
Low R
battery life.
Low gate charge
Fast switch
Miniature TSOP-6 surface mount package
saves board space
provides higher efficiency and extends
DS(on)
APPLICATION
Power switch, power management in portable
and battery-powered products such as computers,
printers, PCMCIA cards, cellular and cordless telephones.
PACKAGE INFORMATION
Package MPQ Leader Size
TSOP-6 3K 7 inch
TSOP-6
A
E
L
5
6
4
B
1
23
F
D G
Millimeter Millimete
REF.
Min. Max.
A 2.70 3.10 G 0 0.10
B 2.60 3.00 H 0.60 REF.
C 1.40 1.80 J 0.12 REF.
D1.10 MAX. K 0° 10°
E 1.90 REF. L 0.95 REF.
F 0.30 0.50
D
D
G
K
REF.
HC
J
Min. Max.
D
D
S
ABSOLUTE MAXIMUM RATINGS (T
Parameter Symbol Ratings Unit
Drain-Source Voltage VDS 60 V
Gate-Source Voltage VGS ±20 V
Continuous Drain Current 1
Pulsed Drain Current
Continuous Source Current (Diode Conduction) 1 I
Power Dissipation 1
Operating Junction and Storage Temperature Range T
Maximum Junction to Ambient 1
Notes
1. Surface Mounted on 1” x 1” FR4 Board.
2. Pulse width limited by maximum junction temperature.
2
IDM 20 A
=25°C unless otherwise specified)
A
T
= 25°C 3.4
A
= 70°C
T
A
T
= 25°C 2
A
= 70°C
T
A
I
D
2.5 A
S
P
D
, T
J
STG
Thermal Resistance Ratings
t≦10 sec 62.5
Steady State
R
θJA
2.7
1.3
-55 ~ 150 °C
110
A
W
°C / W
http://www.SeCoSGmbH.com/ Any changes of specification will not be informed individually.
14-Mar-2012 Rev. C Page 1 of 4
Page 2
STT3458N
3.4A , 60V , R
Elektronische Bauelemente
N-Channel Enhancement Mode Mos.FET
ELECTRICAL CHARACTERISTICS (T
Parameter Symbol Min. Typ. Max. Unit Test Conditions
Gate-Threshold Voltage V
Gate-Body Leakage I
Zero Gate Voltage Drain Current I
On-State Drain Current 1 I
Drain-Source On-Resistance 1 R
Forward Transconductance 1 g
Diode Forward Voltage VSD - 0.81 - V IS=1.3A, VGS=0
Input Capacitance C
Output Capacitance C
Reverse Transfer Capacitance C
Total Gate Charge Qg - 4 -
Gate-Source Charge Qgs - 1.2 -
Gate-Drain Charge Q
Turn-on Delay Time T
Rise Time Tr - 6 -
Turn-off Delay Time T
Fall Time Tf - 5 -
Notes
1. Pulse test：PW≦300μs duty cycle≦2%.
2. Guaranteed by design, not subject to production testing.
=25°C unless otherwise specified)
A
GS(th)
- - ±100 nA VDS=0, VGS= ±20V
GSS
DSS
10 - - A V
D(on)
DS(ON)
fs
iss
oss
rss
- 2.1 -
gd
- 4 -
d(on)
- 17 -
d(off)
1 - - V VDS=VGS, ID=250μA
- - 1 VDS=48V, VGS=0
- - 25
- - 92 VGS=10V, ID=2.7A
- - 107
- 8 - S VDS=15V, ID=2.7A
Dynamic
- 297 -
- 40 -
- 28 -
2
μA
mΩ
pF
nC
nS
V
DS
DS
V
GS
V
DS
V
GS
f=1MHz
V
DS
V
GS
I
=2.7A
D
V
DS
V
GEN
R
=11.2Ω,
L
I
=2.7A,
D
R
GEN
http://www.SeCoSGmbH.com/ Any changes of specification will not be informed individually.
14-Mar-2012 Rev. C Page 2 of 4
92 m
DS(ON)
=48V, VGS=0, T
=5V, VGS=10V
=4.5V, ID=2.5A
=15V,
=0,
=30V,
=4.5V,
=30V,
=10V,
=6Ω
= 55°C
J
Page 3
Elektronische Bauelemente
CHARACTERISTIC CURVES
STT3458N
N-Channel Enhancement Mode Mos.FET
3.4A , 60V , R
DS(ON)
92 m
http://www.SeCoSGmbH.com/ Any changes of specification will not be informed individually.
14-Mar-2012 Rev. C Page 3 of 4
Page 4
Elektronische Bauelemente
CHARACTERISTIC CURVES
STT3458N
N-Channel Enhancement Mode Mos.FET
3.4A , 60V , R
DS(ON)
92 m
http://www.SeCoSGmbH.com/ Any changes of specification will not be informed individually.
14-Mar-2012 Rev. C Page 4 of 4
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