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STT3434N
6 A, 30 V, R
Elektronische Bauelemente
N-Channel Enhancement Mode MOSFET
RoHS Compliant Product
A suffix of “-C” specifies halogen and lead-free
DS(ON)
32 m
DESCRIPTION
These miniature surface mount MOSFETs utilize
a high cell density trench process to provide Low R
DS(on)
and to ensure minimal power loss and heat dissipation.
Typical applications are DC-DC converters and power
management in portable and battery-powered products
such as computers, printers, PCMCIA cards, cellular and
cordless telephones.
FEATURES
Low R
battery life.
Low thermal impedance copper leadframe TSOP-6
saves board space.
Fast switching speed
High performance trench technology
provides higher efficiency and extends
DS(on)
PACKAGE INFORMATION
Package MPQ LeaderSize
TSOP-6 3K 7’ inch
TSOP-6
A
D G
E
L
5
6
4
B
1
23
F
K
Millimete
REF.
Min. Max. Min. Max.
A 2.70 3.10 G 0 0.10
B 2.60 3.00 H 0.60 REF.
C 1.40 1.80 J 0.12 REF.
D1.10 MAX. K 0° 10°
E 1.90 REF. L 0.95 REF.
F 0.30 0.50
D
D
REF.
Millimete
HC
J
D
D
G
ABSOLUTE MAXIMUM RATINGS (T
Parameter Symbol Ratings Unit
Drain-Source Voltage V
Gate-Source Voltage V
Continuous Drain Current 1
Pulsed Drain Current
Continuous Source Current (Diode Conduction) 1 I
Power Dissipation 1
Operating Junction and Storage Temperature Range Tj, Tstg -55 ~ 150 °C
Maximum Junction to Ambient 1
2
I
=25°C unless otherwise specified)
A
DS
GS
= 25°C
T
A
TA= 70°C 4.6
= 25°C
T
A
TA= 70°C 1.3
ID
DM
1.6 A
S
P
D
Thermal Resistance Ratings
t ≦ 5 sec
Steady State 110
R
JA
30 V
±12 V
6.0
20 A
2
62.5
Notes:
1. Surface Mounted on 1” x 1” FR4 Board.
2. Pulse width limited by maximum junction temperature.
S
A
W
°C / W
http://www.SeCoSGmbH.com/ Any changes of specification will not be informed individually.
30-Dec-2010 Rev. A Page 1 of 2
Page 2
Elektronische Bauelemente
ELECTRICAL CHARACTERISTICS (T
Parameter Symbol Min. Typ. Max. Unit Test Conditions
N-Channel Enhancement Mode MOSFET
= 25°C unless otherwise specified)
A
Static
STT3434N
6 A, 30 V, R
DS(ON)
32 m
Gate-Threshold Voltage V
Gate-Body Leakage I
Zero Gate Voltage Drain Current I
On-State Drain Current 1 I
Drain-Source On-Resistance 1 R
GS(th)
GSS
DSS
D(on)
DS(ON)
0.7 - 1.5 V VDS=VGS, ID= 250μA
- - ±100 nA VDS= 0V, VGS= ±8V
- - 1
VDS= 24V, VGS= 0V
μA
- - 10
10 - - A V
- - 32
mΩ
= 24V, VGS= 0V, T
V
DS
5V, VGS= 4.5V
DS =
= 4.5V, ID= 6.0A
V
GS
- - 44 VGS= 2.5V, ID= 5.0A
Forward Transconductance 1 g
fs
- 11.3 - S VDS= 10V, ID= 4.0A
Diode Forward Voltage VSD - 0.75 - V IS= 1.6A, VGS= 0V
Dynamic
2
Total Gate Charge Qg - 6 -
= 10V, VGS= 4.5V,
V
Gate-Source Charge Qgs - 1 -
Gate-Drain Charge Q
- 1.5 -
gd
nC
DS
I
= 4.0A
D
= 55°C
J
Turn-on Delay Time T
- 8 -
d(on)
Rise Time Tr - 24 -
Turn-off Delay Time T
- 35 -
d(off)
Fall Time Tf - 10 -
Notes:
1. Pulse test：PW ≦ 300 us duty cycle ≦ 2%.
2. Guaranteed by design, not subject to production testing.
nS
V
= 10V, V
DD
R
= 15, ID= 1A
L
GEN
= 4.5V,
http://www.SeCoSGmbH.com/ Any changes of specification will not be informed individually.
30-Dec-2010 Rev. A Page 2 of 2
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