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STT3423P
-5.7 A, -20 V, R
Elektronische Bauelemente
P-Channel Enhancement Mode Mos.FET
RoHS Compliant Product
A suffix of “-C” specifies halogen and lead-free
DESCRIPTION
These miniature surface mount MOSFETs utilize a high cell density
trench process to provide low R
and to ensure minimal power
DS(on)
loss and heat dissipation. Typical applications are DC-DC converters
and power management in portable and battery-powered products
such as computers, printers, PCMCIA cards, cellular and cordless
telephones.
FEATURES
Low R
Low thermal impedance copper leadframe TSOP-6 saves board space.
Fast switching speed.
High performance trench technology.
provides higher efficiency and extends battery life.
DS(on)
PRODUCT SUMMARY
PRODUCT SUMMARY
V
(V) R
DS
-20
(on) (m I
DS
42@V
= -4.5V -5.7
GS
57@VGS= -2.5V
(A)
D
-4.9
F
D G
REF.
A 2.70 3.10 G 0 0.10
B 2.60 3.00 H 0.60 REF.
C 1.40 1.80 J 0.12 REF.
D 1.10 MAX. K 0° 10°
E 1.90 REF. L 0.95 REF.
F 0.30 0.50
80@VGS= -1.8V -4.1
6
4
1 3 2
5
Gate
ABSOLUTE MAXIMUM RATINGS(T
Parameter Symbol
Drain-Source Voltage V
Gate-Source Voltage V
Continuous Drain Current a
Pulsed Drain Current
Continuous Source Current (Diode Conduction) a I
Power Dissipation a
Operating Junction and Storage Temperature Range Tj, Tstg -55 ~ 150 °C
b
I
=25°C UNLESS OTHERWISE NOTED)
A
-20 V
DS
±8 V
GS
ID @TA=25℃
I
@TA=70℃
D
±20 A
DM
-1.7 A
S
P
@TA=25℃ 2.0
D
P
@TA=70℃ 1.3
D
THERMAL RESISTANCE RATINGS
42 m
DS(ON)
TSOP-6
A
E
L
B
Millimeter
Min. Max. Min. Max.
Drain
Source
Ratings
Maximum
-5.7
-4.7
K
REF.
HC
J
Millimete
Unit
A
W
Parameter Symbol Maximum Unit
Maximum Junction to Ambient a
t ≦ 5 sec
Steady State 90
R
JA
50
Notes
a. Surface Mounted on 1” x 1” FR4 Board.
b. Pulse width limited by maximum junction temperature.
http://www.SeCoSGmbH.com/ Any changes of specification will not be informed individually.
23-Jul-2010 Rev. A Page 1 of 4
°C / W
Page 2
Elektronische Bauelemente
ELECTRICAL CHARACTERISTICS (T
Parameter Symbol Min. Typ. Max. Unit Test Conditions
P-Channel Enhancement Mode Mos.FET
= 25°C unless otherwise specified)
A
STT3423P
-5.7 A, -20 V, R
DS(ON)
42 m
Gate-Threshold Voltage V
Gate-Body Leakage I
GS(th)
GSS
-0.4 - - V VDS=VGS, ID= -250uA
- - ±100 nA VDS= 0V, VGS= ±8V
- - -1
Zero Gate Voltage Drain Current I
On-State Drain Current a I
DSS
-20 - - A V
D(on)
- - -5
- - 42
Drain-Source On-Resistance a R
DS(ON)
- - 57 VGS= -2.5V, ID= -4.9A
mΩ
- - 80 VGS= -1.8V, ID= -4.1A
Forward Transconductance a g
Diode Forward Voltage a V
fs
- -0.7 - V IS= 1.7A, VGS= 0V
SD
- 10 - S VDS= -10V, ID= -4.9A
DYNAMIC
b
Total Gate Charge Qg - 8 -
Gate-Source Charge Qgs - 1.8 -
Gate-Drain Charge Q
Turn-on Delay Time T
- 1.9 -
gd
- 22 -
d(on)
Rise Time Tr - 35 -
Turn-off Delay Time T
- 45 -
d(off)
Fall Time Tf - 25 -
VDS= -16V, VGS= 0V
uA
= -16V, VGS=0 V, T
V
DS
-4.5V, VGS= -4.5 V
DS =
VGS= -4.5V, ID= -5.7A
= -10V, VGS= -4.5V,
V
nC
nS
DS
I
= -5.7A
D
= -10V, V
V
DD
R
= 6, ID= -1A
L
= -4.5V,
GEN
= 55°C
J
Notes
a. Pulse test：PW ≦ 300 us duty cycle ≦ 2%.
b. Guaranteed by design, not subject to production testing.
http://www.SeCoSGmbH.com/ Any changes of specification will not be informed individually.
23-Jul-2010 Rev. A Page 2 of 4
Page 3
Elektronische Bauelemente
CHARACTERISTIC CURVES
STT3423P
-5.7 A, -20 V, R
P-Channel Enhancement Mode Mos.FET
DS(ON)
42 m
http://www.SeCoSGmbH.com/ Any changes of specification will not be informed individually.
23-Jul-2010 Rev. A Page 3 of 4
Page 4
STT3423P
Elektronische Bauelemente
P-Channel Enhancement Mode Mos.FET
-5.7 A, -20 V, R
DS(ON)
42 m
http://www.SeCoSGmbH.com/ Any changes of specification will not be informed individually.
23-Jul-2010 Rev. A Page 4 of 4
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