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Elektronische Bauelemente
RoHS Compliant Product
A suffix of “-C” specifies halogen and lead-free
N-Channel Enhancement Mode Mos.FET
DESCRIPTION
These miniature surface mount MOSFETs utilize High Cell Density
process. Low R
assures minimal power loss and conserves energy,
DS(on)
making this device ideal for use in power management circuitry. Typical
applications are power switch, power management in portable and
battery-powered products such as computers, printers, PCMCIA cards,
cellular and cordless telephones.
TYPICAL APPLICATIONS
Low R
Extends Battery Life.
Low Gate Charge.
Fast Switch.
Miniature TSOP-6 Surface Mount Package
Saves Board Space.
Provides Higher Efficiency and
DS(on)
PRODUCT SUMMARY
STT3402N
I
V
(V) R
DS
30
(on) (m
DS
0.027@V
= 10V 6.3
GS
0.035@VGS= 4.5V 5.5
D
(A)
PACKAGE INFORMATION
Package MPQ LeaderSize
STT3402N
6.3 A, 30 V, R
D G
27 m
DS(ON)
TSOP-6
A
E
L
5
6
4
B
1
23
F
K
Millimeter
REF.
Min. Max. Min. Max.
A 2.70 3.10 G 0 0.10
B 2.60 3.00 H 0.60 REF.
C 1.40 1.80 J 0.12 REF.
D 1.10 MAX. K 0° 10°
E 1.90 REF. L 0.95 REF.
F 0.30 0.50
D
D
G
REF.
Millimete
HC
J
D
D
S
TSOP-6 3K 7’ inch
ABSOLUTE MAXIMUM RATINGS(T
Parameter Symbol
Drain-Source Voltage V
Gate-Source Voltage V
Continuous Drain Current 1
Pulsed Drain Current
Continuous Source Current (Diode Conduction) 1 I
Power Dissipation 1
Operating Junction and Storage Temperature Range Tj, Tstg -55 ~ 150 °C
2
I
=25°C UNLESS OTHERWISE NOTED)
A
30 V
DS
±20 V
GS
= 25°C
T
A
TA= 70°C 5.2
= 25°C
T
A
TA= 70°C 1.0
ID
±20 A
DM
1.3 A
S
P
D
Ratings
Maximum
6.3
1.6
THERMAL RESISTANCE RATINGS
Parameter Symbol Maximum Unit
Maximum Junction to Ambient 1 t ≦ 5 sec R
78 °C / W
JA
Notes
1 Surface Mounted on 1” x 1” FR4 Board.
Unit
A
W
2 Pulse width limited by maximum junction temperature.
http://www.SeCoSGmbH.com/ Any changes of specification will not be informed individually.
19-Nov-2010 Rev. A Page 1 of 4
Page 2
Elektronische Bauelemente
ELECTRICAL CHARACTERISTICS (T
Parameter Symbol Min. Typ. Max. Unit Test Conditions
SWITCH OFF CHARACTERISTICS
N-Channel Enhancement Mode Mos.FET
= 25°C unless otherwise specified)
A
STT3402N
6.3 A, 30 V, R
DS(ON)
27 m
Drain-Source Breakdown Voltage V
Gate-Body Leakage I
(BR)DSS
GSS
30 - - V VGS=0V, ID= 250uA
- - ±100 nA VDS= 0V, VGS= ±20V
- - 1
Zero Gate Voltage Drain Current I
DSS
- - 10
SWITCH ON CHARACTERISTICS
Gate-Threshold Voltage V
On-State Drain Current 1 I
Drain-Source On-Resistance 1 R
Forward Transconductance 1 g
Diode Forward Voltage 1 V
GS(th)
D(on)
DS(ON)
fs
SD
1.0 1.6 3.0 V VDS=VGS, ID= 250uA
20 - - A V
- 23 27
- 32 39
- 29 35 VGS= 4.5V, ID= 5.5A
- 45 - S VDS= 10V, ID= 6.3A
- 0.75 1.2 V IS= 1.3A, VGS= 0V
DYNAMIC
VDS= 24V, VGS= 0V
uA
= 24V, VGS= 0V, T
V
DS
5V, VGS= 10V
DS =
V
= 10V, ID= 6.3A
GS
mΩ
b
= 10V, ID= 6.3A, T
V
GS
= 55°C
J
= 55°C
J
Total Gate Charge Qg - 9 13
= 15V, VGS= 5V,
V
Gate-Source Charge Qgs - 2.9 -
Gate-Drain Charge Q
- 3.2 -
gd
nC
DS
I
= 6.3A, RL= 6
D
SWITCHING CHARACTERISTICS
Turn-on Delay Time T
Rise Time Tr - 10 19
Turn-off Delay Time T
Fall Time Tf - 5 13
Notes
1 Pulse test：PW ≦ 300 us duty cycle ≦ 2%.
2 Guaranteed by design, not subject to production testing.
- 6 13
d(on)
- 18 30
d(off)
nS
= 15V, V
V
DS
R
= 6, ID= 1A, R
L
GEN
= 10V,
GEN
= 6
http://www.SeCoSGmbH.com/ Any changes of specification will not be informed individually.
19-Nov-2010 Rev. A Page 2 of 4
Page 3
Elektronische Bauelemente
CHARACTERISTIC CURVES
STT3402N
6.3 A, 30 V, R
N-Channel Enhancement Mode Mos.FET
DS(ON)
27 m
http://www.SeCoSGmbH.com/ Any changes of specification will not be informed individually.
19-Nov-2010 Rev. A Page 3 of 4
Page 4
Elektronische Bauelemente
CHARACTERISTIC CURVES
STT3402N
6.3 A, 30 V, R
N-Channel Enhancement Mode Mos.FET
DS(ON)
27 m
http://www.SeCoSGmbH.com/ Any changes of specification will not be informed individually.
19-Nov-2010 Rev. A Page 4 of 4
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