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STT2605
Elektronische Bauelemente
P-Channel Enhancement Mode Power Mos.FET
RoHS Compliant Product
Description
The STT2605 utiltzed advance processing techniques to achieve the lowest
possible on-resistance, extermely efficient and cost-effectiveness device.
The STT2605 is universally used for all commercial-industrial applications.
Features
* Fast Switching Characteristic
* Lower Gate Charge
* Small Footprint & Low Profile Package
D D S
D
6
4
5
2605
G
S
Date Code
1
2
D D G
3
Absolute Maximum Ratings
-4.0A, -30V,RDS(ON) 80m
Ω
REF.
A1 0 0.10 L1 0.60 REF.
A2 0.70 1.00 0° 10°
E1 1.40 1.80
Millimeter
Min. Max.
A 1.10 MAX. L 0.45 REF.
c 0.12 REF. b 0.30 0.50
D 2.70 3.10 e 0.95 REF.
E 2.60 3.00 e1 1.90 REF.
REF.
Millimeter
Min. Max.
Parameter Symbol Ratings Unit
Drain-Source Voltage
Gate-Source Voltage
Continuous Drain Current, (Note 3)
Continuous Drain Current, (Note 3)
Pulsed Drain Current (Note 1)
Total Power Dissipation
Linear Derating Factor
Operating Junction and Storage Temperature Range
Thermal Data
Parameter
Thermal Resistance Junction-ambient (Note 3)
VDS
VGS
ID@TA=25
ID@TA=7
IDM
PD@TA=25
Tj, Tstg
к
к
0
к
-30
±20
-4.0
-3.3
-20
2.0
0.016
-55~+150
Symbol Ratings Unit
Rthj-a
62.5
V
V
A
A
A
W
W /eC
eC
/W eC
http://www.SeCoSGmbH.com/ Any changing of specification will not be informed individual
01-Jun-2002 Rev. A
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STT2605
Elektronische Bauelemente
-4.0A, -30V,RDS(ON) 80m
P-Channel Enhancement Mode Power Mos.FET
C
o
BVDSS
BVDS/ Tj
VGS(th)
IGSS
IDSS
RDS(ON)
Qg
Qgs
Qgd
Td(ON)
Tr
(Off)
Td
T
f
Ciss
Coss
Crss
Min. Unit
-30
_
-1.0
_
_
_
_
_
_
_
_
_
_
_
_
_
_
_
Typ.
_
-0.02
_
_
_
_
_
_
5.5
1
2.6
7
6
18
4
400
90
30
_
_
-3.0
±
100
-1
-25
80
120
8.8
_
_
_
_
_
_
640
_
_
Electrical Characteristics( Tj=25 C Unless otherwise specified)
Parameter Symbol Max.
Drain-Source Breakdown Voltage
Breakdown Voltage Temp. Coefficient
Gat Thershold Voltage
Gate-Source Leakage Current
Drain-Source Leakage Current (Tj=25 )
Drain-Source Leakage Current (Tj=55
StaticDrain-Source On-Resistance
Total Gate Charge
Gate-Source Charge
2
Gate-Drain ("Miller") Charge
Turn-on Delay Time
2
Rise Time
Turn-off Delay Time
Fall Time
Input Capacitance
Output Capacitance
Reverse Transfer Capacitance
o
C
o
)
2
Ω
Test Condition
V
V/
V
nA
uA
uA
m
nC
nS
pF
VGS=0V, ID=-250uA
o
Reference to 25 ,ID=-1mA
C
VDS=VGS, ID=-250uA
±
VGS= 20V
VDS=-30V,VGS=0
VDS=-24V,VGS=0
VGS=-10V, ID=-4.0A
Ω
VGS=-4.5V, ID=-3.0A
ID=-4.0A
VDS=-24V
VGS=-4.5V
5V
VDD=-1
ID=-1A
VGS=-10V
Ω
RG=3.3
Ω
RD=15
VGS=0V
VDS=-25V
f=1.0MHz
o
C
Forward Transconductance
Gfs
_
_
S6
VDS=-5V, ID=-4.0A
Source-Drain Diode
Parameter Symbol Max.
Forward On Voltage VDS
Reverse Recovery Time
Reverse Recovery Charge
2
2
Trr
Qrr
Notes: 1.Pulse width limited by safe operating area.
2.Pulse width 300us, dutycycle 2%.
≦
≦
3.Surface mounted on 1 in2 copper pad of FR4 board; 156OC/W when mounted on Min. copper pad.
http://www.SeCoSGmbH.com/ Any changing of specification will not be informed individual
01-Jun-2002 Rev. A
_
_ _
_
Typ. Test ConditionMin. Unit
_
21
14
-1.2
_
V
nS
nC
IS=-1.6A, VGS=0V.
Is=-4.0A, VGS=0V
dl/dt=100A/us
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STT2605
Elektronische Bauelemente
Characteristics Curve
Fig 1. Typical Output Characteristics
-4.0A -30V,RDS(ON) 80m
P-Channel Enhancement Mode Power Mos.FET
Ω
Fig 2. Typical Output Characteristics
Fig 3. On-Resistance v.s. Gate Voltage
Fig 4. Normalized On-Resistance
v.s. Junction Temperature
Fig 5. Forward Characteristics of
Reverse Diode
http://www.SeCoSGmbH.com/ Any changing of specification will not be informed individual
01-Jun-2002 Rev. A
Fig 6. Gate Threshold Voltage v.s.
Junction Temperature
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STT2605
Elektronische Bauelemente
-4.0A, -30V,RDS(ON) 80m
P-Channel Enhancement Mode Power Mos.FET
Ω
Fig 7. Gate Charge Characteristics Fig 8. Typical Capacitance Characteristics
Fig 9. Maximum Safe Operating Area
Fig 10. Effective Transient Thermal Impedance
Fig 11. Switching Time Waveform Fig 12. Gate Charge Waveform
http://www.SeCoSGmbH.com/ Any changing of specification will not be informed individual
01-Jun-2002 Rev. A
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