Datasheet STT1NF100 Datasheet (SGS Thomson Microelectronics)

STT1NF100

N-CHANNEL 100V - 0.7Ω -1ASOT23-6L

STripFET™ II POWER MOSFET

PRELIMINARY DATA

TYPE V

DSS

R

DS(on)

I

D

STT1NF100 100V <0.8Ω 1A

■ TYPICAL R

■ EXCEPTIONAL dv/dt CAPABILITY

■ VERY LOW Qg

DS(on)

=0.7Ω

DESCRIPTION

This Power MOSFET is the latest development of ST­Microelectronics unique “Single Feature Size

™”strip-

based process. The resulting transistor shows ex­tremely high packing density for low on-resistance,
rugged avalance charac teristics and less critical align­ment steps therefore a remarkable manufacturing re­producibility.

APPLICATIONS

■ DC-DC & DC-AC CONVERTERS

■ DC MOTOR CONTROL (DISK DRIV ES, etc.)

■ SYNCHRONOUS RECTIFICATION

SOT23-6L

INTERNAL SCHEMATIC DIAGRAM

MARKING

■ STQ0

ABSOLUTE MAXIMUM RATINGS

Symbol Parameter Value Unit

V

DS

V

DGR

V

GS

I

D

I

D

I

DM

P

TOT

dv/dt(1) Peak Diode Recovery voltage slope 20 V/ns

T

stg

T

j

(●) Pulse width limited by safe operating area

September 2002

Drain-source Voltage (VGS=0)
Drain-gate Voltage (RGS=20kΩ)

100 V

100 V
Gate- source Voltage ± 20 V
Drain Current (continuous) at TC= 25°C
Drain Current (continuous) at TC= 100°C

()

Drain Current (pulsed) 4 A
Total Dissipation at TC= 25°C

1A

0.6 A

1.6 W

Derating Factor 0.013 W/°C

Storage Temperature
Max. Operating Junction Temperature

(1) ISD≤1A, di/dt ≤350A/µs, VDD≤ V

–55to150 °C

(BR)DSS,Tj≤TJMAX.

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STT1NF100

THERMAL DATA

Rthj-amb(*) Thermal Resistance Junction-ambient Max 78 °C/W

T

l

(*) When mounted on FR-4 board of 1inch² pad, 0.5oz Cu

ELECTRICAL CHARACTERISTICS (TCASE = 25 °C UNLES S OTHERWISE SPECIFIED)
OFF

Symbol Parameter Test Conditions Min. Typ. Max. Unit

V

(BR)DSS

I

DSS

I

GSS

ON (1)

Symbol Parameter Test Conditions Min. Typ. Max. Unit

V

GS(th)

R

DS(on)

Maximum Lead Temperature For Soldering Purpose 260 °C

Drain-source

ID= 250 µA, VGS= 0 100 V

Breakdown Voltage
Zero Gate Voltage

Drain Current (V

GS

=0)

Gate-body Leakage
Current (V

DS

=0)

Gate Threshold Voltage
Static Drain-source On

V

= Max Rating

DS

VDS= Max Rating, TC= 125 °C
V

= ± 20V ±100 nA

GS

V

DS=VGS,ID

=10V,ID= 0.5 A

V

GS

= 250µA

2V

0.7 0.8 Ω

1µA

10 µA

Resistance

DYNAMIC

Symbol Parameter Test Conditions Min. Typ. Max. Unit

(1) Forward Transconductance VDS=15V,ID=1A 1 S

g

fs

C

iss

C

oss

C

rss

Input Capacitance
Output Capacitance 20 pF
Reverse Transfer

Capacitance

V

=25V,f=1MHz,VGS=0

DS

105 pF

9pF

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STT1NF100

ELECTRICAL CHARACTERISTICS (CONTINUED)

SWITCHING ON

Symbol Parameter Test Conditions Min. Typ. Max. Unit

V

t

d(on)

t

r

Q

g

Q

gs

Q

gd

Turn-on Delay Time
Rise Time 5.5 ns
Total Gate Charge

Gate-Source Charge
Gate-Drain Charge

SWITCHING OFF

Symbol Parameter Test Conditions Min. Typ. Max. Unit

t

d(off)

t

f

Turn-off-Delay Time
Fall Time

SOURCE DRAIN DIODE

Symbol Parameter Test Conditions Min. Typ. Max. Unit

I

SD

I

SDM

V

SD

t

rr

Q

rr

I

RRM

Note: 1. Pulsed: Pulse duration = 300 µs, duty cycle 1.5 %.

2. Pulse width limited by safe operating area.

Source-drain Current 1 A

(2)

Source-drain Current (pulsed) 4 A

(1)

Forward On Voltage
Reverse Recovery Time

Reverse Recovery Charge
Reverse Recovery Current

=50V,ID= 0.5A

DD

= 4.7Ω VGS=10V

R

G

(see test circuit, Figure 1)
VDD=50V,ID=1A,

V

=10V

GS

(see test circuit, Figure 2)

VDD= 50V, ID= 0.5A,

=4.7Ω, VGS= 10V

R

G

(see test circuit, Figure 1)

ISD= 1A, VGS=0

= 1A, di/dt = 100A/µs,

I

SD

=20V,Tj= 150°C

V

DD

(see test circuit, Figure 3)

4ns

4

6

1

1.5

13

6.5

1.2 V

45
60

2.7

nC
nC
nC

ns
ns

ns

nC

A

3/6

STT1NF100

Resistive Loa d

Fig. 3: Test Circuit For Diode Recovery Behaviour

Fig. 2: Gate Charge test CircuitFig. 1: Switching Times Test Circuit For

4/6

TSOP-6 MECHANICAL DATA

STT1NF100

DIM.

MIN. TYP. MAX. MIN. TYP. MAX.

A 0.90 1.45 0.035 0.057

A1 0.00 0.15 0.000 0.006

A2 0.90 1.30 0.035 0.051

b 0.25 0.50 0.010 0.020

C 0.09 0.20 0.004 0.008

D 2.80 3.10 0.110 0.122
E 2.60 3.00 0.102 0.118

E1 1.50 1.75 0.059 0.069

L 0.35 0.55 0.014 0.022
e 0.95 0.037

e1 1.90 0.075

mm mils

AA2

A1

b

e

c

L

E

e1

D

E1

5/6

STT1NF100

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its use. No license is granted by implication or otherwise under any patent or patent rights of STMicroelectronics. Specifications
mentioned in this publication are subject to change without notice. This publication supersedes and replaces all information
previously suppli ed. STMi croelect ronics pr oducts are not author ized for use as c ritical component s in li fe suppo rt devi ces or
systems without express written approval of STMicroelectronics.

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