Datasheet STS8NF30L Datasheet (SGS Thomson Microelectronics)



STS8NF30L

N - CHANNEL 30V - 0.018Ω - 8A SO-8

STripFET POWER MOSFET

TYPE V

ST S8NF30L 30 V < 0.0 22 Ω 6A

■ TYPICALR

■ STANDARD OUTLINE FOR EASY

DS(on)

DSS

= 0.018 Ω

R

DS(on)

I

D

AUTOMATEDSURFACEMOUNTASSEMBLY

■ LOW THRESHOLDDRIVE

DESCRIPTION

This Power MOSFET isthe secondgeneration of
STMicroelectronics unique ” Single Feature
Size

”

strip-based process. The resulting
transistor shows extremely high packing density
for low on-resistance, rugged avalanche
characteristics and less critical alignment steps
therefore a remarkable manufacturing
reproducibility.

APPLICATIONS

■ DC MOTOR DRIVE

■ DC-DCCONVERTERS

■ BATTERYMANAGMENTIN NOMADIC

EQUIPMENT

■ POWERMANAGEMENTIN

PORTABLE/DESKTOPPC

s

SO-8

INTERNAL SCHEMATIC DIAGRAM

ABSOLUTE MAXIMUM RATINGS

Symb o l Parameter Value Unit

V

V

V

I

DM

P

(•) Pulse width limitedby safe operating area

December 1999

Drain-source Voltage (VGS=0) 30 V

DS

Drain- g at e V olt ag e (RGS=20kΩ)30V

DGR

Gate-s ource Volta ge ± 20 V

GS

Drain Cur rent (cont inu ous ) at Tc = 25oC

I

D

Single O per ation
Drain Cur rent (cont inu ous ) at T
Single O per ation

(•) Drain Cur rent (pulsed) 32 A

Tot al Dissi pat ion at Tc=25oC 2.5 W

tot

=100oC

c

8
5

A
A

1/8

STS8NF30L

THERMAL DATA

R

thj-amb

T

T

(*)Mountedon FR-4board (SteadyState)

*Ther mal Resistan c e J u nc tion-ambient
Maximum O per ating Ju nct ion Temperat ure

j

Sto rage Temperat ure

stg

50

150

-65 to 150

o

C/W

o

C/W

o

C

ELECTRICAL CHARACTERISTICS

=25oC unless otherwisespecified)

(T

case

OFF

Symbol Parameter Test Conditions Min. Typ. Max. Unit

V

(BR)DSS

Drain-source

ID=250µAVGS=0 30 V

Break dow n Vo lt age

ON (

I

DSS

I

GSS

∗)

Zero Gate Voltage
Drain Curre nt (V

GS

Gat e- bod y Leakag e
Current (V

DS

=0)

=0)

V

=MaxRating

DS

=MaxRating Tc=125oC

V

DS

= ± 20 V ± 100 nA

V

GS

1

10

Symbol Parameter Test Conditions Min. Typ. Max. Unit

V

GS(th)

R

DS(on)

I

D(on)

Gate Threshold Voltage VDS=VGSID= 250 µ A11.62.5V
Sta t ic Drain-s our c e On

Resistance

VGS=10V ID=4A

=4.5V ID=4A

V

GS

On State Drain Current VDS>I

D(on)xRDS(on )max

0.018

0.021

8A

0.022

0.026

VGS=10V

DYNAMIC

Symbol Parameter Test Conditions Min. Typ. Max. Unit

g

(∗)Forward

fs

Tr ansc on duc tance

C

C

C

Input Capaci t ance

iss

Out put Capac itance

oss

Reverse Transfer

rss

Capacit a nc e

VDS>I

D(on)xRDS(on )maxID

=4A 10 S

VDS=25V f=1MHz VGS= 0 V 1050

250

85

µA
µA

Ω
Ω

pF
pF
pF

2/8

STS8NF30L

ELECTRICAL CHARACTERISTICS

(continued)

SWITCHINGON

Symbol Parameter Test Conditions Min. Typ. Max. Unit

t

d(on)

Tur n-on Delay Time
Rise Time

t

r

VDD=15V ID=4A
R

=4.7

G

Ω

VGS=4.5V

22
60

(Resis t iv e Load, see fig. 3)

Q
Q
Q

Tot al Gate Charge

g

Gat e- Source Charge

gs

Gate-Drain Charge

gd

VDD=24V ID=6A VGS= 4.5 V 17.5

4
7

23 nC

SWITCHINGOFF

Symbol Parameter Test Conditions Min. Typ. Max. Unit

t

d(off)

Tur n-of f Dela y Tim e

t

Fall T ime

f

VDD=15V ID=4A

=4.7 Ω VGS=4.5V

R

G

42
10

(Resis t iv e Load, see fig. 3)

t

r(Voff)

t

t

Off-volt age Rise Time
Fall T ime

f

Cross-over Tim e

c

V

=24V ID=8A

clamp

=4.7 Ω VGS=4.5V

R

G

(Indu ct iv e Load, see fig . 5)

11
12
25

SOURCEDRAINDIODE

Symbol Parameter Test Conditions Min. Typ. Max. Unit

I

SD

I

SDM

V

SD

t

Q

I

RRM

(∗) Pulsed:Pulse duration = 300µs, duty cycle 1.5%
(•) Pulse width limited by safeoperating area

Source-drain Current

(•)

Source-drain Current

8

32

(pulsed)

(∗)ForwardOnVoltage ISD=8A VGS=0 1.2 V

Reverse Recovery

rr

Time
Reverse Recovery

rr

ISD=8A di/dt=100A/µs

=20V Tj=150oC

V

DD

(see test circuit, fig. 5)

50

40
Charge
Reverse Recovery

1.6

Current

ns
ns

nC
nC

ns
ns

ns
ns
ns

A
A

ns

nC

A

SafeOperating Area ThermalImpedance

3/8

STS8NF30L

OutputCharacteristics

Transconductance

TransferCharacteristics

Static Drain-sourceOn Resistance

Gate Charge vs Gate-sourceVoltage

4/8

CapacitanceVariations

STS8NF30L

NormalizedGate ThresholdVoltage vs
Temperature

Source-drainDiode Forward Characteristics

NormalizedOn Resistancevs Temperature

5/8

STS8NF30L

Fig. 1:

UnclampedInductiveLoad TestCircuit

Fig. 3: SwitchingTimes Test Circuits For
ResistiveLoad

Fig. 2:

UnclampedInductiveWaveform

Fig. 4: Gate Charge test Circuit

Fig. 5:

Test CircuitFor InductiveLoad Switching

And Diode Recovery Times

6/8

SO-8 MECHANICALDATA

STS8NF30L

DIM.

MIN. TYP. MAX. MIN. TYP. MAX.

A 1.75 0.068
a1 0.1 0.25 0.003 0.009
a2 1.65 0.064
a3 0.65 0.85 0.025 0.033

b 0.35 0.48 0.013 0.018
b1 0.19 0.25 0.007 0.010

C 0.25 0.5 0.010 0.019
c1 45 (typ.)

D 4.8 5.0 0.188 0.196

E 5.8 6.2 0.228 0.244

e 1.27 0.050
e3 3.81 0.150

F 3.8 4.0 0.14 0.157

L 0.4 1.27 0.015 0.050

M 0.6 0.023

S 8 (max.)

mm inch

0016023

7/8

STS8NF30L

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granted by implication or otherwise under anypatent or patent rights of STMicroelectronics. Specificationmentioned in this publicationare
subjecttochange withoutnotice.Thispublication supersedes and replaces all informationpreviously supplied. STMicroelectronicsproducts
are not authorizedfor useas critical components in life support devices or systemswithout express written approval of STMicroelectronics.

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