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STS8C5H30L
Specification
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Datasheet STS8C5H30L Specification

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Page 1
STS8C5H30L
SO-8
N-channel 30 V, 0.018 Ω typ., 8 A, P-channel 30 V, 0.045 Ω typ., 5 A
Power MOSFET in a SO-8 package
Datasheet - production data
Features
5
8
4
1
Order code Channel V
N
STS8C5H30L
P0.055 Ω 5 A
DSRDS(on)
30 V
max I
0.022 Ω 8 A
D
• Conduction losses reduced
• Switching losses reduced
• Low threshold drive
• Standard outline for easy automated surface
mount assembly
Applications
• Switching applications
Description
This device is a complementary N-channel and P­channel Power MOSFET developed using STripFET™ II (P-channel) and STripFET™ V (N­channel) technologies. The resulting transistors show extremely high packing density for low on­resistance and rugged avalanche characteristics.

Table 1. Device summary

Order code Marking Packages Packaging
STS8C5H30L 8C5H30L SO-8 Tape and reel
June 2014 DocID10809 Rev 7 1/18
This is information on a product in full production.
www.st.com
Page 2
Contents STS8C5H30L
Contents
1 Electrical ratings . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 3
2 Electrical characteristics . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 4
2.1 Electrical characteristics (curves) . . . . . . . . . . . . . . . . . . . . . . . . . . . . 7
3 Test circuits . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 11
4 Package mechanical data . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 12
5 Packaging mechanical data . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 15
6 Revision history . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 17
2/18 DocID10809 Rev 7
Page 3
STS8C5H30L Electrical ratings

1 Electrical ratings

Table 2. Absolute maximum ratings

Value
Symbol Parameter
N-channel P-channel
Unit
I
DM
V
V
I
I
Drain-source voltage 30 V
DS
Gate- source voltage ±16 ±16 V
GS
Drain current (continuous) at TC = 25°C
D
single operating
Drain current (continuous) at TC = 100°C
D
single operating
(1)
Drain current (pulsed) 32 21.6 A
85.4A
6.4 4.3 A
Total dissipation at TC = 25°C dual operating 1.6 W
P
TOT
T
T
1. Pulse width limited by safe operating area
Total dissipation at TC = 25°C single operating 2 W
Storage temperature -55 to 150 °C
stg
Operating junction temperature 150 °C
j

Table 3. Thermal data

Symbol Parameter Value Unit
Thermal resistance junction-ambient single
(1)
R
thj-a
R
thj-a
1. When mounted on 1 inch² FR-4 board, 2 oz. Cu., t ≤ 10 sec
operating
Thermal resistance junction-ambient dual
(1)
operating
62.5 °C/W
78 °C/W
Note: For the p-channel MOSFET actual polarity of voltages and current has to be reversed
DocID10809 Rev 7 3/18
18
Page 4
Electrical characteristics STS8C5H30L

2 Electrical characteristics

(T
= 25 °C unless otherwise specified)
CASE

Table 4. On/off states

Symbol Parameter Test conditions Channel Min. Typ. Max. Unit
V
(BR)DSS
I
DSS
I
GSS
Drain-source breakdown voltage
Zero gate voltage drain current
Gate-body leakage current
VGS = 0, ID = 250 μA
V
= 0, VDS = 30 V N 1 μA
GS
VGS = 0, VDS=30 V,
=125 °C
T
C
V
= 0, VGS = ±16 V N ±100 nA
DS
VDS = 0, VGS = ±16 V P ±100 nA
N30 V
P30 V
P10μA
N11.62.5V
V
GS(th)
R
DS(on)
Gate threshold voltage VDS = VGS, ID = 250 μA
= 10 V, ID = 4 A N 0.018 0.022 Ω
V
GS
V
= 10 V, ID = 2.5 A P 0.045 0.055 Ω
St a ti c d ra i n -s o ur ce on-resistance
GS
V
= 4.5 V, ID = 4 A N 0.020 0.025 Ω
GS
P11.62.5V
VGS = 4.5 V, ID = 2.5 A P 0.070 0.075 Ω
4/18 DocID10809 Rev 7
Page 5
STS8C5H30L Electrical chara cter ist ics

Table 5. Dynamic

Symbol Parameter Test conditions Channel Min. Typ. Max. Unit
V
= 15 V, ID= 4 A N - 8.5 S
Forward
(1)
g
fs
transconductance
DS
VDS = 15 V, ID= 2.5 A P - 10 S
N-857 pF
C
C
C
Q
Q
1. Pulsed: Pulse duration = 300 μs, duty cycle 1.5.
Input capacitance
iss
Output capacitance
oss
Reverse transfer
rss
capacitance
Q
Total gate charge
g
Gate-source charge
gs
Gate-drain charge
gd
VGS = 0, VDS = 25 V, f = 1 MHz
N-channel VDD=24 V ID=8 A
VGS=5 V P-channel
V
= 24 V ID = 4 A
DD
= 5 V
V
GS
(see Figure 27)
P - 1350 pF
N-147 pF
P-490 pF
N - 20 pF
P-130 pF
N-710nC
P - 12.5 16 nC
N-2.5 nC
P-5 nC
N-2.3 nC
P-3 nC
For the p-channel MOSFET actual polarity of voltages and current has to be reversed

Table 6. Switching times

Symbol Parameter Test conditions Channel Min. Typ. Max. Unit
N-12-ns
t
d(on)
Turn-on delay time
Rise time
t
r
N-channel V
= 15 V, ID = 4 A
DD
=4.7 Ω, VGS = 4.5 V
R
G
P-25-ns
N - 14.5 - ns
P-35-ns
P-channel
t
d(off)
Turn-off delay time
t
Fall time
f
V
= 15 V, ID = 2 A
DD
=4.7 Ω, VGS = 4.5 V
R
G
Figure 26
N-23-ns
P-125-ns
N-8-ns
P-35-ns
DocID10809 Rev 7 5/18
18
Page 6
Electrical characteristics STS8C5H30L

Table 7. Source drain diode

Symbol Parameter Test conditions Channel Min. Typ. Max. Unit
N- 8A
I
I
SDM
V
SD
Q
I
RRM
1. Pulse width limited by safe operating area.
2. Pulsed: Pulse duration = 300 μs, duty cycle 1.5%
Source-drain current
SD
Source-drain current
(1)
(pulsed)
(2)
Forward on voltage
Reverse recovery
t
rr
time
Reverse recovery
rr
charge
Reverse recovery current
P- 5A
N- 32A
P- 20A
I
= 8 A, VGS = 0 N - 1.5 V
SD
I
= 5 A, VGS = 0 P - 1.2 V
SD
N-channel I
= 8 A, di/dt = 100 A/μs
SD
VDD=15 V,Tj =150 °C
N-15 ns
P-45 ns
N-5.7 nC
P-channel I
= 5 A, di/dt = 100 A/μs
SD
VDD=15 V, Tj =150 °C
Figure 28
P-36 nC
N-0.76 A
P-1.6 A
Note: For the p-channel MOSFET actual polarity of voltages and current has to be reversed
6/18 DocID10809 Rev 7
Page 7
STS8C5H30L Electrical chara cter ist ics
I
D
1
0.1
0.01
0.1
1
V
DS
(V)
10
(A)
Operation in this area is
Limited by max R
DS(on)
1ms
10ms
100ms
1s
Tj=150°C
Tc=25°C
Sinlge pulse
10
100
AM03310v1

2.1 Electrical characteristics (curves)

Figure 2. Safe operating area n-ch Figure 3. Thermal impedance n-ch

Figure 4. Output characteristics n-ch Figure 5. Transfer characteristics n-ch

Figure 6. Transconductance n-ch Figure 7. Static drain-source on resistance n-ch

DocID10809 Rev 7 7/18
18
Page 8
Electrical characteristics STS8C5H30L
Figure 8. Gate charge vs. gate-source voltage
n-ch
Figure 10. Normalized gate threshold voltage
vs. temperature n-ch

Figure 9. Capacitance variations n-ch

Figure 11. Normalized on resistance vs.
temperature n-ch
Figure 12. Source-drain diode forward
characteristics n-ch
Figure 13. Normalized breakdown voltage vs.
8/18 DocID10809 Rev 7
temperature n-ch
Page 9
STS8C5H30L Electrical chara cter ist ics
I
D
1
0.1
0.01
0.1
1
V
DS
(V)
10
(A)
Operation in this area is
Limited by max R
DS(on)
1ms
10ms
100ms
1s
Tj=150°C Tc=25°C
Sinlge pulse
10
100
AM03311v1

Figure 14. Safe operating area p-ch Figure 15. Thermal impedance p-ch

Figure 16. Output characteristics p-ch Figure 17. Transfer characteristics p-ch

Figure 18. Transconductance p-ch Figure 19. Static drain-source on resistance

DocID10809 Rev 7 9/18
p-ch
18
Page 10
Electrical characteristics STS8C5H30L
Figure 20. Gate charge vs. gate-source voltage
p-ch
Figure 22. Normalized gate threshold voltage
vs. temperature p-ch

Figure 21. Capacitance variations p-ch

Figure 23. Normalized on resistance vs.
temperature p-ch
Figure 24. Source-drain diode forward
characteristics p-ch
Figure 25. Normalized breakdown voltage vs.
10/18 DocID10809 Rev 7
temperature p-ch
Page 11
STS8C5H30L Test circuits
AM01468v1
VGS
PW
VD
RG
RL
D.U.T.
2200
μF
3.3 μF
V
DD
AM01469v1
VDD
47kΩ
1kΩ
47kΩ
2.7kΩ
1kΩ
12V
V
i=20V=VGMAX
2200 μF
PW
IG=CONST
100Ω
100nF
D.U.T.
V
G
AM01470v1
A
D
D.U.T.
S
B
G
25
Ω
A
A
B
B
R
G
G
FAST DIODE
D
S
L=100μH
μF
3.3
1000
μF
V
DD
AM01472v1
V(BR)DSS
VDD
VDD
VD
IDM
ID

3 Test circuits

Figure 26. Switching times test circuit for
resistive load
Figure 28. Test circuit for inductive load
switching and diode recovery times

Figure 27. Gate charge test circuit

Figure 29. Unclamped inductive load test circuit

L
VD
2200
μF
3.3
μF
VDD

Figure 30. Unclamped inductive waveform Figure 31. Switching time waveform

ID
Vi
D.U.T.
Pw
AM01471v1
tdon
ton
tr
90%
tdoff
toff
tf
90%
10%
0
10%
VDS
90%
V
GS
10%
0
AM01473v1
DocID10809 Rev 7 11/18
18
Page 12
Package mechanical data STS8C5H30L
0016023_G_FU

4 Package mechanical data

In order to meet environmental requirements, ST offers these devices in different grades of
®
ECOPACK
specifications, grade definitions and product status are available at: www.st.com.
ECOPACK
packages, depending on their level of environmental compliance. ECOPACK®
®
is an ST trademark.

Figure 32. SO-8 drawing

12/18 DocID10809 Rev 7
Page 13
STS8C5H30L Package mechanical data

Table 8. SO-8 mechanical data

mm
Dim.
Min. Typ. Max.
A 1.75
A1 0.10 0.25
A2 1.25
b0.31 0.51
b1 0.28 0.48
c0.10 0.25
c1 0.10 0.23
D4.804.905.00
E5.806.006.20
E1 3.80 3.90 4.00
e1.27
h0.25 0.50
L0.40 1.27
L1 1.04
L2 0.25
k0° 8°
ccc 0.10
DocID10809 Rev 7 13/18
18
Page 14
Package mechanical data STS8C5H30L
Footprint_0016023_G_FU

Figure 33. SO-8 recommended footprint

(a)
a. All dimensions are in millimeters.
14/18 DocID10809 Rev 7
Page 15
STS8C5H30L Packaging mechanical data

5 Packaging mechanical data

Figure 34. SO-8 tape and reel dimensions

DocID10809 Rev 7 15/18
18
Page 16
Packaging mechanical data STS8C5H30L

T a ble 9. SO-8 tape and reel mechanical data

mm
Dim.
Min. Typ. Max.
A-330
C12.8 - 13.2
D20.2 -
N60 -
T-22.4
Ao 8.1 - 8.5
Bo 5.5 - 5.9
Ko 2.1 - 2.3
Po 3.9 - 4.1
P7.9 - 8.1
16/18 DocID10809 Rev 7
Page 17
STS8C5H30L Revision history

6 Revision history

Table 10. Revision history

Date Revision Changes
17-Sep-2004 1 First revision.
31-Oct-2006 2 The document has been reformatted.
30-Jan-2007 3 typo mistake on Table 2.
23-Jul-2007 4 Figure 14 has been updated.
23-Feb-2009 5 Figure 2, Figure 3, Figure 14 and Figure 15 have been changed.
10-Jun-2010 6 Updated V
in Table 4: On/off states.
GS(th)
– Modified: title
– Modified: Description
13-Jun-2014 7
– Modified: marking in Table 1 – Updated: Section 4: Package mechanical data
– Minor text changes
DocID10809 Rev 7 17/18
18
Page 18
STS8C5H30L
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18/18 DocID10809 Rev 7
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