Datasheet STS7PF30L Datasheet (SGS Thomson Microelectronics)

STS7PF30L

P-CHANNEL 30V - 0.016Ω -7ASO-8

STripFET™ II POWER MOSFET

PRELIMINARY DATA

TYPE V

STS7PF30L 30 V < 0.021 Ω 7A

■ TYPICAL R

■ STANDARD OUTLINE FOR EASY

DSS

(on) = 0.016Ω

DS

R

DS(on)

I

D

AUTOMATED SURFACE MOUNT ASSEMBLY

■ LOW THRESHOLD DRIVE

DESCRIPTION

This Power Mosfet is the latest development of ST­Microelectronics unique “Single Feature Size

™”

strip-based proc es s . The resulting transistor shows
extremely high packing density for low on-resis­tance, rugged avalanche characteristics and less
critical alignment stepstherefore a remarkable man­ufacturing reproducibility.

APPLICATIONS

■ BATTERY MANAGEMENT IN NOMADIC

EQUIPMENT

■ POWER MANAGEMENT IN CELLULAR

PHONES

SO-8

INTERNAL SCHEMATIC DIAGRAM

ABSOLUTE MAXIMUM RATINGS

Symbol Parameter Value Unit

V

DS

V

DGR

V

GS

I

D

I

D

I

DM

P

TOT

(●) Pulse width limited by safe operating area

December 2002

Drain-source Voltage (VGS=0)
Drain-gate Voltage (RGS=20kΩ)
Gate- source Voltage ±20 V
Drain Current (continuous) at TC= 25°C
Drain Current (continuous) at TC= 100°C
Drain Current (pulsed) 28 A
Total Dissipation at TC= 25°C

Note: For the P-CHANNEL MOSFET actual polarity of voltages and

30 V
30 V

7A

4.4 A

2.5 W

current has to be reversed

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STS7PF30L

THERMAL DATA

Rthj-amb(#) Thermal Re sistance Junction-ambient Max 50 °C/W

Tj Maxim um Lead Temperature For Soldering Purpose Typ 150 °C

T

stg

(#) When mounted on 1 inch2FR4 Board, 2 oz of Cu and t ≤ 10s

ELECTRICAL CHARACTERISTICS (TJ= 25 °C UNLESS OTHERRWISE SPECIFIED)
OFF

Symbol Parameter Test Conditions Min. Typ. Max. Unit

V

(BR)DSS

I

DSS

I

GSS

ON (1)

Symbol Parameter Test Conditions Min. Typ. Max. Unit

V

GS(th)

R

DS(on)

Storage Temperature –55 to 150 °C

Drain-source

ID= 250 µA, VGS= 0 30 V

Breakdown Voltage
Zero Gate Voltage

Drain Current (V

GS

=0)

Gate-body Lea kage
Current (V

DS

=0)

Gate Threshold Voltage
Static Drain-source On

Resistance

V

= Max Rating

DS

V

= Max Rating , TC= 125 °C

DS

V

= ± 20V ±100 nA

GS

V

DS=VGS,ID

VGS=10V,ID= 3.5A

= 4.5V, ID= 3.5A

V

GS

= 250µA

1 1.6 2.5 V

0.011 0.016 0.021 Ω

0.016 0.022 0.028 Ω

1µA

10 µA

DYNAMIC

Symbol Parameter Test Conditions Min. Typ. Max. Unit

g

fs

C

iss

C

oss

C

rss

Forward Transconductanc e VDS=10V,ID= 3.5A 16 S

V

Input Capacitance

=25V,f=1MHz,VGS=0

DS

2600 pF
Output Capacitance 523 pF
Reverse Transfer

174 pF

Capacitance

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STS7PF30L

ELECTRICAL CHARACTERISTICS (CONTINUED)

SWITCHING ON(2)

Symbol Parameter Test Conditions Min. Typ. Max. Unit

V

t

d(on)

Q

Q

Q

t

r

g

gs

gd

Turn-on Delay Time
Rise Time 54 ns
Total Gate Charge

Gate-Source Charge
Gate-Drain Charge

SWITCHING OFF(2)

Symbol Parameter Test Conditions Min. Typ. Max. Unit

t

d(off)

t

f

Turn-off-Delay Time
Fall Time

SOURCE DRAIN DIODE (2)

Symbol Parameter Test Conditions Min. Typ. Max. Unit

I

SD

I

SDM

VSD(2)

t

rr

Q

rr

I

RRM

Note: 1. Pulsed: Pulse duration = 300 µs, duty cycle 1.5 %.

2. Pulse w idth limited by safe operating area.

Source-drain Current 7 A

(1)

Source-drain Current (pulsed) 28 A
Forward On Voltage
Reverse Recovery Time

Reverse Recovery Charge
Reverse Recovery Current

=15V,ID= 3.5A

DD

= 4.7Ω VGS=4.5V

R

G

(Resistive Load, Figure 3)

=15V,ID=7A,

V

DD

V

= 4.5V

GS

VDD=15 V,ID= 3.5 A,
RG=4.7Ω, VGS= 4.5 V
(Resistive Load, Figure 3)

ISD= 7 A, VGS=0

= 7A, di/dt = 100A/µs,

I

SD

VDD=24V,Tj= 150°C
(see test circuit, Figure 5)

68 ns

28

38

8.8
12

65
23

1.2 V

40
46

2.3

nC
nC
nC

ns
ns

ns

nC

A

3/6

STS7PF30L

Fig. 2: Unclam ped Inductive WaveformFig. 1: Unclamped Inducti ve Load T es t Circuit

Fig. 3: Switching Times Test Circuit For

Resistive Load

Fig. 5: Test Circuit For Inductive Load Switching
And Diode Recovery Times

Fig. 4: Gate Charge test Circuit

4/6

0016023

SO-8 MECHANICAL DATA

STS7PF30L

DIM.

MIN. TYP. MAX. MIN. TYP. MAX.

A1.750.068
a1 0.1 0.25 0.003 0.009
a2 1.65 0.064
a3 0.65 0.85 0.025 0.033

b 0.35 0.48 0.013 0.018
b1 0.19 0.25 0.007 0.010

C 0.25 0.5 0.010 0.019
c1 45 (typ.)

D 4.8 5.0 0.188 0.196

E 5.8 6.2 0.228 0.244

e1.27 0.050
e3 3.81 0.150

F 3.8 4.0 0.14 0.157

L 0.4 1.27 0.015 0.050

M0.60.023

S 8 (max.)

mm inch

5/6

STS7PF30L

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consequences of use of su ch in formation nor for any in fringement of patents or other rights of third parties w hich may result from
its use. No license is granted by implication or otherwise under any patent or patent rights of STMicroelectronics. Specifications
mentioned in this publication are subject to change without notice. This publication supersedes and replaces all information
previously suppli ed. STMi croelect ronics pr oducts are not author ized for use as cr itical component s in li fe suppo rt devi ces or
systems without express written approval of STMicroelectronics.

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