Datasheet STS7NF30L Datasheet (SGS Thomson Microelectronics)

®

N - CHANNEL 30V - 0.021Ω - 7A SO-8

TYPE V

STS7NF30L 30 V < 0.025 Ω 7 A

■

TYPICAL R

■

STANDARD OUTLINE FOR EASY

DS(on)

DSS

= 0.021

AUTOMATED SURF ACE MOUNT ASSEMBLY

■

LOW THRESHOLD DRIVE

DESCRIPTION

This Power MOSFET is the second generation of
STMicroelectronics unique " Single Feature
Size " strip-based process. The resulting
transistor shows extremely high packing density
for low on-resistance, rugged avalanche
characteristics and less critical alignment steps
therefore a remarkable manufacturing
reproducibility.

Ω

R

DS(on)

I

D

STS7NF30L

STripFET POWER MOSFET

PRELIMINARY DATA

SO-8

APPLICATIONS

■

DC MOTOR DRIVE

■

DC-DC CONVERTERS

■

BATTERY MANAGM ENT IN NOMADI C

INTERNAL SCHEMATIC DIAGRAM

EQUIPMENT

■

POWER MANAGEMENT IN
PORTABLE/DESKTOP PC

s

ABSOLUTE MAXIMUM RATINGS

Symbol Parameter Value Unit

I

V

V

V

DM

P

Drain-source Voltage (VGS = 0) 30 V

DS

Drain- gate Voltage (RGS = 20 kΩ)

DGR

Gate-source Voltage ± 20 V

GS

I

Drain Current (continuous) at Tc = 25 oC

D

Drain Current (continuous) at T

(•) Drain Current (pulsed) 42 A

Total Dissipation at Tc = 25 oC 2.5 W

tot

= 100 oC

c

30 V

7

4.4

A
A

(•) Pulse width limited by safe operating area

May 1999

1/5

STS7NF30L

THERMAL DATA

R

thj-amb

T

T

(*)Thermal Resistance Junction-ambient
Maximum Operating Junction Temperature

j

Storage Temperature

stg

50

150

-55 to 150

o

C/W

o
o

C
C

(*)

Mounted on FR-4 board ( (t

ELECTRICAL CHARACTERISTICS

≤ 10sec)

(T

case

= 25 oC unless otherwise specified)

OFF

Symbol Parameter Test Conditions Min. Typ. Max. Unit

V

(BR)DSS

Drain-source

I

= 250 µA V

D

GS

= 0

30 V

Breakdown Voltage

I

I

ON (∗

DSS

GSS

Zero Gate Voltage
Drain Current (V

Gate-body Leakage
Current (V

)

DS

= 0)

GS

= 0)

= Max Rating

V

DS

V

= Max Rating Tc = 125 oC

DS

V

= ± 20 V

GS

1

10

± 100 nA

Symbol Parameter Test Conditions Min. Typ. Max. Unit

V

R

DS(on)

I

D(on)

GS(th)

Gate Threshold Voltage
Static Drain-source On

Resistance

V

= VGS ID = 250 µA

DS

VGS = 10 V ID = 3.5 A
V

= 4.5 V ID = 3.5 A

GS

On State Drain Current VDS > I

V

= 10 V

GS

D(on)

x R

DS(on)max

1 1.6 2.5 V

0.021

0.025

20 A

0.025

0.032ΩΩ

DYNAMIC

µA
µA

Symbol Parameter Test Conditions Min. Typ. Max. Unit

g

(∗) Forward

fs

VDS > I

D(on)

x R

DS(on)max

ID = 3.5 A 10 S

Transconductance

C
C
C

Input Capacitance

iss

Output Capacitance

oss

Reverse Transfer

rss

V

= 25 V f = 1 MHz V

DS

= 0 V 1250

GS

230

50

Capacitance

2/5

pF
pF
pF

STS7NF30L

ELECTRICAL CHARACTERISTICS (continued)

SWITCHING ON

Symbol Parameter Test Conditions Min. Typ. Max. Unit

t

d(on)

Turn-on Delay Time
Rise Time

t

r

V

= 15 V ID = 3 A

DD

= 4.7 Ω VGS = 5 V

R

G

(Resistive Load, see fig. 3)

Q
Q
Q

Total Gate Charge

g

Gate-Source Charge

gs

Gate-Drain Charge

gd

V

= 24 V ID = 7 A V

DD

= 4.5 V 17

GS

SWITCHING OFF

Symbol Parameter Test Conditions Min. Typ. Max. Unit

t

d(off)

Turn-off Delay Time
Fall Time

t

f

V

= 15 V ID = 3 A

DD

= 4.7 Ω VGS = 5 V

R

G

(Resistive Load, see fig. 3)

t

r(Voff)

t

t

Off-voltage Rise Time
Fall Time

f

Cross-over Time

c

V

= 24 V ID = 7 A

clamp

= 4.7 Ω VGS = 5 V

R

G

(Inductive Load, see fig. 5)

SOURCE DRAIN DIODE

22
30

23 nC
4
6

55
10

10
18
30

ns
ns

nC
nC

ns
ns

ns
ns
ns

Symbol Parameter Test Conditions Min. Typ. Max. Unit

2
8

I

SDM

I

SD

Source-drain Current

(•)

Source-drain Current
(pulsed)

V

(∗) Forward On Voltage ISD = 7 A VGS = 0 1.2 V

SD

t

Q

Reverse Recovery

rr

Time
Reverse Recovery

rr

I

= 7 A di/dt = 100 A/µs

SD

V

= 20 V Tj = 150 oC

DD

(see test circuit, fig. 5)

30
30

Charge

I

RRM

Reverse Recovery

2

Current

(∗) Pulsed: Pulse duration = 300 µs, duty cycle 1.5 %
(•) Pulse width limited by safe operating area

A
A

ns

nC

A

3/5

STS7NF30L

SO-8 MECHANICAL DATA

DIM.

MIN. TYP. MAX. MIN. TYP. MAX.

A1.750.068
a1 0.1 0.25 0.003 0.009
a2 1.65 0.064
a3 0.65 0.85 0.025 0.033

b 0.35 0.48 0.013 0.018
b1 0.19 0.25 0.007 0.010

C 0.25 0.5 0.010 0.019

c1 45 (typ.)

D 4.8 5.0 0.188 0.196

E 5.8 6.2 0.228 0.244

e1.27 0.050
e3 3.81 0.150

F 3.8 4.0 0.14 0.157

L 0.4 1.27 0.015 0.050

M0.60.023

S 8 (max.)

mm inch

4/5

0016023

STS7NF30L

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granted by implication or otherwise under any patent or patent rights of STMicroelectronics. Specification mentioned in this publication are
subject to chan ge w ithout notice. This publicatio n su persedes a nd r eplaces al l inf ormati on previ ously suppl ied. STMicroelect ron ics produ cts
are not auth ori zed f or use as critical component s in life support devices or systems without exp ress writ te n approval of STMicroelectronics.

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