Page 1
STS6PF30L
c
n
u
The ST log o i s registered trademark of ST
h
All other names are the property of their re
O
Australi a - Brazil - China - Finland - France - G ermany - Ho ng K ong - In
Singapor e - Spain - Sweden - Switze rl and - Un
P-CHANNEL 30V - 0.027 Ω - 6A SO-8
STripFET™ POWER MOSFET
TYPE
V
DSS
STS6PF30L 30 V <0.030
■ TYPICAL R
■ STANDARD OUTLIN E FO R EASY
(on) = 0.027 Ω
DS
R
DS(on)
I
D
6 A
Ω
AUTOMATED SURFACE MOUNT ASSEMBLY
■ LOW THRESHOLD DRIVE
DESCRIPTION
This Power MOSFET is the latest dev elo pment of
STMicroelectronis unique "Single Feature Size™"
strip-based process. The resulting transistor
shows extremely high packing density for low onresistance, rugged avalanche characteristics and
less critical alignment steps therefore a remarkable manufacturing reproducibility.
APPLICATIONS
■ MOBILE PHONE APPLICATIONS
■ DC-DC CONVERTERS
■ BATTERY MANAGEMENT IN NOMADIC
EQUIPMENT
SO-8
INTERNAL SCHEMATIC DIAGRAM
ABSOLUTE MAXIMUM RATINGS
Symbol Parameter Value Unit
V
DS
V
DGR
V
GS
I
D
I
D
(
I
DM
P
tot
(
Pulse widt h l i m i ted by safe operating area. Note: For the P-CHANNEL MOSFET actual polarity of
•)
.
Drain-source Voltage (VGS = 0)
Drain-gate Voltage (RGS = 20 kΩ)
Gate- source Voltage ± 16 V
Drain Current (continuous) at TC = 25°C
Drain Current (continuous) at TC = 100°C
•)
Drain Current (pulsed) 24 A
Total Dissipation at TC = 25°C
Information furnished is believed to be accurate an d rel i able. However, STMicroel
of use of such information nor for any infringement of patents or other rights of third
by implic ation or otherwise under any patent or patent ri ghts of STM i croelectr oni
to change without notice. This publication supersedes and replaces all informatio
authoriz ed for use as c ri t i cal components in life support dev i ces or systems witho
30 V
30 V
2003 STMicroelectronics - All Rig
6A
3.8 A
2.5 W
voltages and current has to be reversed
STMicroelectronics GROUP OF C
http://www.st.com
1/8May 2003
Page 2
STS6PF30L
THERMA L D ATA
Rthj-amb
T
T
stg
Thermal Resistance Junction-ambient
Maximum Lead Temperature For Soldering Purpose
j
storage temperature
Max
Typ
50
150
-55 to 150
°C/W
°C
°C
ELECTRICAL CHARACTERISTICS (T
= 25 °C unless otherwise specified)
case
OFF
Symbol Parameter Test Conditions Min. Typ. Max. Unit
I
= 250 µA, VGS = 0
D
V
= Max Rating
DS
V
= Max Rating TC = 125°C
DS
V
= ± 16 V
GS
30 V
1
10
±100 nA
ON
V
(BR)DSS
I
DSS
I
GSS
(*)
Drain-source
Breakdown Voltage
Zero Gate Voltage
Drain Current (V
GS
Gate-body Leakage
Current (V
DS
= 0)
= 0)
Symbol Parameter Test Conditions Min. Typ. Max. Unit
V
V
GS(th)
R
DS(on)
Gate Threshold Voltage
Static Drain-source On
Resistance
= VGS I
DS
= 10 V ID = 3 A
V
GS
V
= 5 V ID = 3 A
GS
= 250 µA
D
1 1.6 2.5 V
0.027
0.034
0.030
0.042
DYNAMIC
Symbol Parameter Test Conditions Min. Typ. Max. Unit
(*)
g
fs
C
iss
C
oss
C
rss
Forward Transconductance
Input Capacitance
Output Capacitance
Reverse Transfer
Capacitance
V
=10 V ID=3 A
DS
= 25V, f = 1 MHz, VGS = 0
V
DS
12 S
1670
345
120
µA
µA
Ω
Ω
pF
pF
pF
2/8
Page 3
STS6PF30L
ELECTRICAL CHARACTERISTICS (continued)
SWITCHING ON
Symbol Parameter Test Conditions Min. Typ. Max. Unit
t
d(on)
t
r
Q
g
Q
gs
Q
gd
(*)
Turn-on Delay Time
Rise Time
Total Gate Charge
Gate-Source Charge
Gate-Drain Charge
= 15 V ID = 3 A
V
DD
R
= 4.7 Ω VGS = 5 V
G
(Resistive Load, Figure 1)
= 24V ID= 6A VGS=5V
V
DD
(see test circuit, Figure 2)
62
140
21
3.9
8.6
28 nC
ns
ns
nC
nC
SWITCHING OFF
(*)
Symbol Parameter Test Conditions Min. Typ. Max. Unit
t
d(off)
Turn-off Delay Time
t
f
Fall Time
V
DD
R
= 4.7Ω, V
G
GS
= 5 V
57
19
= 24 V ID = 3 A
(Resistive Load, Figure 1)
SOURCE DRAIN DIODE
(*)
Symbol Parameter Test Conditions Min. Typ. Max. Unit
I
SD
I
SDM
V
SD
t
rr
Q
rr
I
RRM
(*)
Pulse wi dth [ 300 µs, duty cycle 1.5 %.
(
•)Pulse width limited by T
Source-drain Current
(•)
Source-drain Current (pulsed)
(*)
Forward On Voltage
Reverse Recovery Time
Reverse Recovery Charge
Reverse Recovery Current
JMAX
I
= 6 A VGS = 0
SD
= 6 A di/dt = 100A/µs
I
SD
V
= 15 V Tj = 150°C
DD
(see test circuit, Figure 3)
6
4
1.2 V
37
46.3
2.5
ns
ns
A
A
ns
nC
A
Safe Operating Area Thermal Impedance
3/8
Page 4
STS6PF30L
Output Characteristics Transfer Characteristics
Transconductance Static Drain-source On Resistance
Gate Charge vs Gate-source Voltage Capacitance Variations
4/8
Page 5
STS6PF30L
Normalized Gate Threshold Voltage vs Temperature Normalized on Resistance vs Temperature
Source-drain Diode Forward Characteristics Normalized Breakdown Voltage vs Temperature
. .
5/8
Page 6
STS6PF30L
Fig. 1: Switching Times Test Circuits For Resistive
Load
Fig. 3: Test Circuit For Diode Recovery Behaviour
Fig. 2: Gate Charge test Circuit
6/8
Page 7
SO-8 MECHANICAL DATA
STS6PF30L
DIM.
MIN. TYP. MAX. MIN. TYP. MAX.
A1.750.068
a1 0.1 0.25 0.003 0.009
a2 1.65 0.064
a3 0.65 0.85 0.025 0.033
b 0.35 0.48 0.013 0.018
b1 0.19 0.25 0.007 0.010
C 0.25 0.5 0.010 0.019
c1 45 (typ.)
D 4.8 5.0 0.188 0.196
E 5.8 6.2 0.228 0.244
e1.27 0.050
e3 3.81 0.150
F 3.8 4.0 0.14 0.157
L 0.4 1.27 0.015 0.050
M0.60.023
S 8 (max.)
mm inch
0016023
7/8
Page 8
STS6PF30L
Information furnished is believed to be accurate an d rel i able. However, STMicroelectro ni cs assumes no responsibility for the consequen ces
of use of such information nor for any infringement of patents or other rights of third parties which may result from its use. No license is granted
by implic ation or otherwise under any patent or patent ri ghts of STM i croelectr onics. Sp ecifications mentioned in thi s publication are subject
to change without notice. This publication supersedes and replaces all information previously supplied. STMicroelectronics product s are not
authorized for use as cri tical comp onents in lif e support devi ces or systems without express written approv al of STMicroel ectronics.
The ST log o i s registered trademark of STMicroelectronics
2003 STMi croelectronics - All Ri ghts Rese rved
All other names are the property of their respective ow ners.
Australi a - Brazil - Canada - China - Finland - France - Germ any - Hong Kong - India - Israel - Ital y - Japan - Malay sia - Malta - Morocco -
Singapor e - S pai n - Sweden - S witzerland - United Kingdom - United States.
STMicroelect ro n ics GRO UP OF COMPANI ES
http://www.st.com
8/8
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