Datasheet STS6DNF30V Datasheet (SGS Thomson Microelectronics)

STS6DNF30V

DUAL N-CHANNEL 30V - 0.026Ω - 6A SO-8

2.5V-DRIVE STripFET™ II POWER MOSFET

TYPE V

STS6DNF30V 30 V

■ TYPICAL R

■ TYPICAL R

■ ULTRA LOW THRESHOLD GATE DRIVE (2.5V)

■ STANDARD OUTLI NE FO R EASY

DSS

(on) = 0.026Ω (@4.5V)

DS

(on) = 0.030Ω (@2.5V)

DS

R

DS(on)

<0.030Ω (@4.5V)
<0.038Ω (@2.5V)

I

6 A

D

AUTOMATED SURFACE MOUNT ASSEMBLY

DESCRIPTION

This Power MOSFET is t he latest development of

STMicroelectronics unique “Single Feature Size

™”

strip-based process. The res ulting transistor sh ows
extremely high packing density for low on-resis­tance, rugged avalanche characteristics and less
critical alignment steps therefore a remarkable man­ufacturing reproducibility.

APPLICATIONS

■ BATTERY SAFETY UNIT IN NOMADIC

EQUIPMENT

■ DC-DC CONVERTERS

■ POWER MANAGEMENT IN PORTABLE/

DESKTOP PC

S

SO-8

INTERNAL SCHEMATIC DIAGRAM

ABSOLUTE MAXIMUM RATINGS

Symbol Parameter Value Unit

V

DS

V

DGR

V

GS

I

D

I

DM

P

TOT

(●) Pulse width limited by safe operating area

Drain-source Voltage (VGS = 0)
Drain-gate Voltage (RGS = 20 kΩ)
Gate- source Voltage ±12 V

Drain Current (continuos) at TC = 25°C
Single Operation
Drain Current (continuos) at T
Single Operation

(l)

Drain Current (pulsed) 24 A
Total Dissipation at TC = 25°C Dual Operation

Total Dissipation at TC = 25°C Single Operation

= 100°C

C

30 V
30 V

6

3.8

2

1.6

A
A

W
W

1/8July 2002

STS6DNF30V

THERMA L D ATA

Rthj-amb Thermal Resistance Junction-ambient Max Single Operation

Thermal Resistance Junction-ambient Max Dual Operation

T

j

T

stg

Max. Operating Junction Temperature 150 °C
Storage Temperature –65 to 150 °C

ELECTRICAL CHARACTERISTICS (TCASE = 25 °C UNLESS OTHERWISE SPECIFIED)
OFF

Symbol Parameter Test Conditions Min. Typ. Max. Unit

V

(BR)DSS

I

DSS

I

GSS

(1)

ON

Symbol Parameter Test Conditions Min. Typ. Max. Unit

V

GS(th)

R

DS(on)

Drain-source
Breakdown Voltage

Zero Gate Voltage
Drain Current (V

GS

= 0)

Gate-body Leakage
Current (V

DS

= 0)

Gate Threshold Voltage
Static Drain-source On

Resistance

ID = 250 µA, VGS = 0 30 V

V

= Max Rating

DS

V

= Max Rating, TC = 125 °C

DS

V

= ±12V ±100 nA

GS

V

= VGS, ID = 250µA

DS

0.6 V
VGS = 4.5 V, ID = 3 A
VGS = 2.5 V, ID = 3 A

78

62.5

1µA

10 µA

0.026 0.030 Ω

0.030 0.038 Ω

°C/W
°C/W

DYNAMIC

Symbol Parameter Test Conditions Min. Typ. Max. Unit

(1) Forward Transconductance VDS > I

g

fs

C

iss

C

oss

C

rss

Input Capacitance
Output Capacitance 180 pF
Reverse Transfer

Capacitance

ID= 3 A

V

DS

x R

D(on)

DS(on)max,

= 25 V, f = 1 MHz, VGS = 0

15 S

800 pF

32 pF

2/8

STS6DNF30V

ELECTRICAL CHARACTERISTICS (CONTINUED)

SWITCHING ON

Symbol Parameter Test Conditions Min. Typ. Max. Unit

V

t

d(on)

Q
Q
Q

t

r

gs
gd

Turn-on Delay Time
Rise Time 25 ns
Total Gate Charge

g

Gate-Source Charge
Gate-Drain Charge

SWITCHING OFF

Symbol Parameter Test Conditions Min. Typ. Max. Unit

t

d(off)

t

f

Turn-off-Delay Time
Fall Time

SOURCE DRAIN DIODE

Symbol Parameter Test Conditions Min. Typ. Max. Unit

I

SD

I

SDM

VSD (1)

t

rr

Q

rr

I

RRM

Note: 1. Pulsed: Pu l se duration = 300 µs, duty c ycle 1.5 %.

2. Pulse width li mited by safe operating area.

Source-drain Current 6 A

(2)

Source-drain Current (pulsed) 24 A
Forward On Voltage
Reverse Recovery Time

Reverse Recovery Charge
Reverse Recovery Current

= 15 V, ID = 3 A

DD

R

= 4.7Ω VGS = 2.5V

G

(see test circuit, Figure 3)

= 15 V, ID = 6 A,

V

DD

VGS = 2.5 V

VDD = 10 V, ID = 3 A,
RG=4.7Ω, V

GS

= 2.5 V

(see test circuit, Figure 3)

ISD = 6 A, VGS = 0

= 6 A, di/dt = 100A/µs,

I

SD

V

= 15 V, Tj = 150°C

DD

(see test circuit, Figure 5)

20 ns

6.8

9.5

2

3.4

32
13

1.2 V

25
21

1.7

nC
nC
nC

ns
ns

ns

nC

A

Safe Operating Area Thermal Impedance

3/8

STS6DNF30V

Output Characteristics

Transconductance

Transfer Characteristics

Static Drain-source On Resistance

Gate Charge vs Gate-source Voltage

4/8

Capacitance Variations

Source-drain Diode Forward Characteristics

STS6DNF30V

Normalized On Resistance vs Temperatur eNormalized Gate Thereshold Voltage vs Temp.

5/8

STS6DNF30V

Fig. 2: Unclamped Inductive WaveformFig. 1: Unclamped Inductive Load Test Circuit

Fig. 3: Switching Times Test Circuit For

Resistive Load

Fig. 5: Test Circuit For Inductive Load Switching
And Diode Recovery Times

Fig. 4: Gate Charge test Circuit

6/8

SO-8 MECHANICAL DATA

STS6DNF30V

DIM.

MIN. TYP. MAX. MIN. TYP. MAX.

A1.750.068
a1 0.1 0.25 0.003 0.009
a2 1.65 0.064
a3 0.65 0.85 0.025 0.033

b 0.35 0.48 0.013 0.018
b1 0.19 0.25 0.007 0.010

C 0.25 0.5 0.010 0.019
c1 45 (typ.)

D 4.8 5.0 0.188 0.196

E 5.8 6.2 0.228 0.244

e1.27 0.050
e3 3.81 0.150

F 3.8 4.0 0.14 0.157

L 0.4 1.27 0.015 0.050

M0.60.023

S 8 (max.)

mm inch

0016023

7/8

STS6DNF30V

Information furnished is believed to be accurate and reliable. However, STMicroelectronics assumes no responsibi lity f or the
consequences of use of su ch in formation nor for any in fringement of paten ts or o ther rights of third parties w hich may result from
its use. No license is granted by implication or otherwise under any patent or patent rights of STMicroelectronics. Specifications
mentioned in this publication are subject to change without notice. This publication supersedes and replaces all information
previously suppli ed. STMi croelect ronics pr oducts are not author ized for use as c ritical component s in li fe suppo rt devi ces or
systems without express written approval of STMicroelectronics.

Australia - Brazil - Canada - China - Finland - France - Germany - Hong Kong - India - Israel - Italy - Japan - Malaysia - Malta - Morocco

© The ST logo is a registered trademark of STMicroelectronics

© 2002 STMicroelectronics - Printed in Italy - All Rights Reserved

Singapore - Spain - Sweden - Switzerland - United Kingdom - United States.

STMicroelectronics GROUP OF COMPANIES

© http://www.st.com

8/8