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STS5PF20V
Obsolete Product(s) - Obsolete Product(s)
P-CHANNEL 20V - 0.065Ω -5ASO-8
2.5V-DRIVE STripFET™ II POWER MOSFET
TYPE V
STS5PF20V 20 V
■ TYPICAL R
■ TYPICAL R
■ ULTRA LOW THRESHOLD GATE DRIVE (2.5V)
■ STANDARD OUTLINE FOR EASY
DSS
(on) = 0.065Ω (@4.5V)
DS
(on) = 0.085Ω (@2.5V)
DS
R
DS(on)
<0.080Ω (@4.5V)
<0.10Ω (@2.5V)
I
D
5A
AUTOMATED SURFACE MOUNT ASSEMBLY
DESCRIPTION
This Power MOSFET is the latest development of
STMicroelectronics unique “Single Feature Size
™”
strip-based process. The resulting transistor shows
extremely extremely low on-resistance when driven
at 2.5V.
APPLICATIONS
■ POWER MANAGEMENT IN CELLULAR
PHONES
■ DC-DC CONVERTERS
■ BATTERY MANAGEMENTIN NOMADIC
EQUIPMENT
SO-8
INTERNAL SCHEMATIC DIAGRAM
ORDER CODES
PART NUMBER MARKING PACKAGE PACKAGING
STS5PF20V S5PF20V SO-8 TAPE& REEL
1/8March 2004
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Obsolete Product(s) - Obsolete Product(s)
STS5PF20V
ABSOLUTE MAXIMUM RATINGS
Symbol Parameter Value Unit
V
DS
V
DGR
V
GS
I
D
I
D
IDM()
P
TOT
() Pulsewidthlimitedbysafeoperatingarea
Note: For the P-CHANNEL MOSFET actual polarity of voltages and current has to be reversed
THERMAL DATA
Rthj-amb Thermal Resistance Junction-ambient Max 50 °C/W
T
T
stg
Drain-source Voltage (VGS=0)
Drain-gate Voltage (RGS=20kΩ)
20 V
20 V
Gate- source Voltage ± 8 V
Drain Current (continuous) at TC= 25°C
Drain Current (continuous) at TC= 100°C
5A
3.1 A
Drain Current (pulsed) 20 A
Total Dissipation at TC= 25°C
Max. Operating Junction Temperature –55 to 150 °C
j
2.5 W
Storage Temperature –55 to 150 °C
ELECTRICAL CHARACTERISTICS (T
= 25 °C UNLESS OTHERWISE SPECIFIED)
J
OFF
Symbol Parameter Test Conditions Min. Typ. Max. Unit
V
(BR)DSS
Drain-source
ID=250µA,VGS=0 20 V
Breakdown Voltage
I
DSS
I
GSS
Zero Gate Voltage
Drain Current (V
GS
Gate-body Leakage
Current (V
DS
=0)
=0)
V
= Max Rating
DS
V
= Max Rating, TC=125°C
DS
V
= ± 8V ±100 nA
GS
1µA
10 µA
ON (1)
Symbol Parameter Test Conditions Min. Typ. Max. Unit
V
GS(th)
R
DS(on)
Gate Threshold Voltage
Static Drain-source On
Resistance
V
DS=VGS,ID
VGS=4.5V,ID=2.5A
=2.5V,ID=2.5A
V
GS
= 250µA
0.45 V
0.065 0.080 Ω
0.085 0.10 Ω
DYNAMIC
Symbol Parameter Test Conditions Min. Typ. Max. Unit
g
(1) Forward Transconductance VDS=15V,ID= 2.5 A 6.6 S
fs
C
iss
C
oss
C
rss
Input Capacitance
Output Capacitance 179 pF
Reverse Transfer
=15V,f=1MHz,VGS=0
V
DS
412 pF
42.5 pF
Capacitance
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Obsolete Product(s) - Obsolete Product(s)
STS5PF20V
ELECTRICAL CHARACTERISTICS (CONTINUED)
SWITCHING ON
Symbol Parameter Test Conditions Min. Typ. Max. Unit
t
d(on)
Q
Q
Q
t
r
g
gs
gd
Turn-on Delay Time
Rise Time 47 ns
Total Gate Charge
Gate-Source Charge
Gate-Drain Charge
SWITCHING OFF
Symbol Parameter Test Conditions Min. Typ. Max. Unit
t
d(off)
t
f
Turn-off-Delay Time
FallTime
SOURCE DRAIN DIODE
Symbol Parameter Test Conditions Min. Typ. Max. Unit
I
SD
I
SDM
V
SD
t
rr
Q
rr
I
RRM
Note: 1. Pulsed: Pulse duration = 300 µs, duty cycle 1.5 %.
Source-drain Current 5 A
Source-drain Current (pulsed) 20 A
(1)
ForwardOnVoltage
Reverse Recovery Time
Reverse Recovery Charge
Reverse Recovery Current
=10V,ID=2.5A
V
DD
R
=4.7Ω VGS=2.5V
G
(see test circuit, Figure 1)
=10V,ID=5A,
V
DD
V
=2.5V
GS
(see test circuit, Figure 2)
VDD=10V,ID=2.5A,
RG=4.7Ω, VGS=2.5V
(seetestcircuit, Figure1)
ISD=5A,VGS=0
= 5 A, di/dt = 100A/µs,
I
SD
V
=16V,Tj= 150°C
DD
(see test circuit, Figure 3)
11 ns
4.5
6
0.73
1.75
39
20
1.2 V
32
12.8
0.8
nC
nC
nC
ns
ns
ns
nC
A
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Obsolete Product(s) - Obsolete Product(s)
STS5PF20V
Safe Operating Area Thermal Imp edence
Output Characteristics Transfer Characteristics
Transconductance
Static Drain-source On Resistance
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Obsolete Product(s) - Obsolete Product(s)
STS5PF20V
Gate Charge vs Gate-so urce Voltage
Normalized Gate Thereshold Voltage vs Temp. Normalized On Resistance vs Temperature
Capacitance Variations
Source-drain Diode Forward Characteristics
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Obsolete Product(s) - Obsolete Product(s)
STS5PF20V
Fig. 1: Switching Times Test Circuit For
Resistive Load
Fig. 3: Test Circuit For Diode Recovery Behaviour
Fig. 2: Gate Charge test Circuit
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Obsolete Product(s) - Obsolete Product(s)
SO-8 MECHANICAL DATA
STS5PF20V
DIM.
MIN. TYP. MAX. MIN. TYP. MAX.
A1.750.068
a1 0.1 0.25 0.003 0.009
a2 1.65 0.064
a3 0.65 0.85 0.025 0.033
b 0.35 0.48 0.013 0.018
b1 0.19 0.25 0.007 0.010
C 0.25 0.5 0.010 0.019
c1 45 (typ.)
D 4.8 5.0 0.188 0.196
E 5.8 6.2 0.228 0.244
e1.27 0.050
e3 3.81 0.150
F 3.8 4.0 0.14 0.157
L 0.4 1.27 0.015 0.050
M0.60.023
S8 (max.)
mm inch
0016023
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Obsolete Product(s) - Obsolete Product(s)
STS5PF20V
Information furnished is believed to be accurate and reliable. However, STMicroelectronics assumes no responsibility for the
consequences of u se of suc h informat ion n or for any in fring ement of paten ts or oth er ri ghts of th ird part ies whic h may resul t from
its use. No license is granted by implication or otherwise under any patent or patent rights of STMicroelectronics. Specifications
mentioned in this publication are subject to change without notice. This publication supersedes and replaces all information
previously supplied. STMicroelectronics products are not authorized for use as critical components in life support devices or
systems without express written approval of STMicroelectronics.
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