Datasheet STS4DPFS30L Datasheet (SGS Thomson Microelectronics)

STripFET™ MOSFET PLUS SCHOTTKY RECTIFIER

MAIN PRODUCT CHARACTERISTICS
MOSFET

V

DSS

30 V < 0.08

R

DS(on)

STS4DPFS30L

P-CHANNEL 30V - 0.07Ω - 4A SO-8

I

D

Ω

4 A

SCHOTTKY

DESCRIPTION

I

F(AV )

3 A 30 V 0.51 V

V

RRM

V

F(MAX)

SO-8

INTERNAL SCHEMATIC DIAGRAM

This product associates the latest low voltage
STripFET™ in p-channel version to a low drop

Schottky diode. Such configuration is extremely ver­satile in implementing, a large variety of DC-DC
converters for printers, portable equipment, and cel­lular phones.

MOSFET ABSOLUTE MAXIMUM RATINGS

Symbol Parameter Value Unit

V

DS

V

DGR

V

GS

I

D

I

D

I

(●)

DM

P

TOT

Drain-source Voltage (VGS = 0)
Drain-gate Voltage (RGS = 20 kΩ)
Gate- source Voltage ± 20 V

Drain Current (continuos) at TC = 25°C
Drain Current (continuos) at TC = 100°C
Drain Current (pulsed) 16 A
Total Dissipation at TC = 25°C

30 V
30 V

4A

3.4 A

1.6 W

SCHOTTKY ABSOLUTE MAXIMUM RATINGS

Symbol Parameter Value Unit

V

RRM

I

F(RMS)

I

F(AV)

I

FSM

I

RRM

I

RSM

dv/dt

Repetitive Peak Reverse Voltage 30 V
RMS Forward Current 20 A
Average Forward Current TL = 125°C

Surge Non Repetitive Forward Current tp = 10 ms

Repetitive Peak Reverse Current tp = 2 µs

Non Repetitive Peak Reverse Current
Critical Rate Of Rise Of Reverse Voltage 10000 V/µs

δ

= 0.5

Sinusoidal

F = 1 kHz
tp = 100 µs1 A

Note: For the P-CHANNEL MOSFET actual polarity of Voltages

3A

75 A

1A

and current has to be reversed

1/8October 2000

STS4DPFS30L

THERMA L D ATA

Rthj-amb (*)Thermal Resistance Junction-ambient MOSFET 85 °C/W
Rthj-amb (*)Thermal Resistance Junction-ambient SCHOTTKY 100 °C/W

T

stg

T

l

MOSFET ELECTRICAL CHARACTERISTICS (TCASE = 25 °C UNLESS OTHERWISE SPECIFIED)
OFF

Symbol Parameter Test Conditions Min. Typ. Max. Unit

V

(BR)DSS

I

DSS

I

GSS

ON (1)

Symbol Parameter Test Conditions Min. Typ. Max. Unit

V

GS(th)

R

DS(on)

I

D(on)

Storage Temperature Range -55 to 150 °C
Junction Temperature 150 °C

(*) Mounted on FR-4 board (Steady State)

Drain-source

ID = 250 µA, VGS = 0 20 V

Breakdown Voltage
Zero Gate Voltage

Drain Current (V

GS

= 0)

Gate-body Leakage
Current (V

DS

= 0)

Gate Threshold Voltage
Static Drain-source On

Resistance
On State Drain Current VDS > I

V

= Max Rating

DS

V

= Max Rating, TC = 125 °C

DS

V

= ± 20 V ±100 nA

GS

V

= VGS, ID = 250µA

DS

VGS = 10V, ID = 2 A
VGS = 4.5V, ID = 2 A

x R

D(on)

DS(on)max,

1 1.6 2.5 V

0.07 0.08

0.08 0.095

16 A

1µA

10 µA

VGS=10V

Ω

DYNAMIC

Symbol Parameter Test Conditions Min. Typ. Max. Unit

(1) Forward Transconductance VDS > I

g

fs

C

iss

C

oss

C

rss

Input Capacitance
Output Capacitance 490 pF
Reverse Transfer

Capacitance

ID=2 A

V

DS

x R

D(on)

DS(on)max,

= 25V, f = 1 MHz, VGS = 0

5S

1350 pF

130 pF

2/8

STS4DPFS30L

ELECTRICAL CHARACTERISTICS (CONTINUED)

SWITCHING ON

Symbol Parameter Test Conditions Min. Typ. Max. Unit

V

t

d(on)

Q
Q
Q

t

r

gs
gd

Turn-on Delay Time
Rise Time 35 ns
Total Gate Charge

g

Gate-Source Charge 5 nC
Gate-Drain Charge 3 nC

SWITCHING OFF

Symbol Parameter Test Conditions Min. Typ. Max. Unit

t

d(off)

t

t

r(Voff)

t
t

f

f
c

Turn-off Delay Time
Fall Time

Off-voltage Rise Time
Fall Time
Cross-over Time

SOURCE DRAIN DIODE

Symbol Parameter Test Conditions Min. Typ. Max. Unit

I

SD

I

SDM

VSD (1)

t

rr

Q

rr

I

RRM

Note: 1. Pulsed: Pu l se duration = 300 µs, duty cyc l e 1.5 %.

2. Pulse width li mited by safe operating area.

Source-drain Current 4 A

(2)

Source-drain Current (pulsed) 16 A
Forward On Voltage
Reverse Recovery Time

Reverse Recovery Charge 36 nC
Reverse Recovery Current 1.6 A

= 15V, ID = 3A RG=4.7Ω

DD

V

= 10V

GS

(see test circuit, Figure 3)
V

= 24V, ID = 6A,

DD

VGS = 4.5 V

VDD = 15 V, ID = 2A,
RG=4.7Ω, V

GS

= 4.5 V

(see test circuit, Figure 3)

= 24 V, ID = 6 A,

V

clamp

RG=4.7Ω, V

GS

= 4.5 V

(see test circuit, Figure 5)

ISD = 4 A, VGS = 0
I

= 4 A, di/dt = 100A/µs,

SD

V

= 15 V, Tj = 150°C

DD

(see test circuit, Figure 5)

25 ns

12.5 16 nC

125

30

83
40
75

1.2 V

45 ns

ns
ns

ns
ns
ns

SCHOTTCKY STATIC ELETTRICAL CHARACTERISTICS

Symbol Parameter Test Conditions Min. Typ. Max. Unit

(*) Reve rsed Leak age Curren t TJ = 25 °C , VR = 30 V

I

R

TJ = 125 °C , VR = 30 V

(*) Forward Voltage Drop TJ = 25 °C , IF = 3 A

V

F

T

= 125 °C , IF = 3 A 0.46

J

0.03

0.2

100

0.51

0.46

mA
mA

V
V

3/8

STS4DPFS30L

Safe Operating Area

Output Characteristics

Thermal Impedance

Transfer Characteristics

Transconductance

4/8

Static Drain-source On Resistance

STS4DPFS30L

Capacitance VariationsGate Charge vs Gate-source Voltage

Normalized Gate Threshold Volta ge vs Temp. Normalized On Resistance vs Temperatur e

Source-drain Diode Forward Characteristics

5/8

STS4DPFS30L

Fig. 2: Unclamped Inductive WaveformFig. 1: Unclamped Inductive Load Test Circuit

Fig. 3: Switching Times Test Circuits For

Resistive Load

Fig. 5: Test Circuit For Inductive Load Switching
And Diode Recovery Times

Fig. 4: Gate Charge test Circuit

6/8

SO-8 MECHANICAL DATA

STS4DPFS30L

DIM.

MIN. TYP. MAX. MIN. TYP. MAX.

A1.750.068
a1 0.1 0.25 0.003 0.009
a2 1.65 0.064
a3 0.65 0.85 0.025 0.033

b 0.35 0.48 0.013 0.018
b1 0.19 0.25 0.007 0.010

C 0.25 0.5 0.010 0.019
c1 45 (typ.)

D 4.8 5.0 0.188 0.196

E 5.8 6.2 0.228 0.244

e1.27 0.050
e3 3.81 0.150

F 3.8 4.0 0.14 0.157

L 0.4 1.27 0.015 0.050

M0.60.023

S 8 (max.)

mm inch

0016023

7/8

STS4DPFS30L

8/8

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