Datasheet STS4DNFS30L Datasheet (SGS Thomson Microelectronics)

STripFET™ II MOSFET PLUS SCHOTTKY RECTIFIER

MAIN PRODUCT CHARACTERISTICS
MOSFET

V

DSS

30 V < 0.055 Ω 4 A

R

DS(on)

STS4DNFS30L

N-CHANNEL 30V - 0.044Ω - 4A SO-8

I

D

SCHOTTKY

I

F(AV )

3 A 30 V 0.51 V

V

RRM

V

F(MAX)

SO-8

DESCRIPTION

This product associates the latest low voltage
STripFET™ in n-channel version to a low drop

INTERNAL SCHEMATIC DIAGRAM

Schottky diode. Such configuration is extremely ver­satile in implementing, a large variety of DC-DC
converters for printers, portable equipment, and cel­lular phones.

MOSFET ABSOLUTE MAXIMUM RATINGS

Symbol Parameter Value Unit

V

DS

V

DGR

V

GS

I

D

I

D

I

(●)

DM

P

TOT

Drain-source Voltage (VGS = 0)
Drain-gate Voltage (RGS = 20 kΩ)
Gate- source Voltage ± 16 V

Drain Current (continuous) at TC = 25°C
Drain Current (continuous) at TC = 100°C
Drain Current (pulsed) 16 A
Total Dissipation at TC = 25°C

30 V
30 V

4A

2.5 A

2W

SCHOTTKY ABSOLUTE MAXIMUM RATINGS

Symbol Parameter Value Unit

V

RRM

I

F(RMS)

I

F(AV)

I

FSM

I

RRM

I

RSM

dv/dt

(•)Pu l se width limite d by safe operating area

Repetitive Peak Reverse Voltage 30 V
RMS Forward Current 20 A
Average Forward Current TL = 125°C

Surge Non Repetitive Forward Current tp = 10 ms

Repetitive Peak Reverse Current tp = 2 µs

Non Repetitive Peak Reverse Current
Critical Rate Of Rise Of Reverse Voltage 10000 V/µs

δ = 0.5

Sinusoidal

F=1 kHz
tp = 100 µs1 A

3A

75 A

1A

1/8July 2002

STS4DNFS30L

THERMA L D ATA

Rthj-amb (*)Thermal Resistance Junction-ambient MOSFET 62.5 °C/W

T

stg

T

l

MOSFET ELECTRICAL CHARACTERISTICS (TCASE = 25 °C UNLESS OTHERWISE SPECIFIED)
OFF

Symbol Parameter Test Conditions Min. Typ. Max. Unit

V

(BR)DSS

I

DSS

I

GSS

ON (1)

Symbol Parameter Test Conditions Min. Typ. Max. Unit

V

GS(th)

R

DS(on)

Storage Temperature Range -55 to 150 °C
Junction Temperature -55 to 150 °C

(*) Mounted on FR-4 bo ard (Steady State)

Drain-source

ID = 250 µA, VGS = 0 30 V

Breakdown Voltage
Zero Gate Voltage

Drain Current (V

GS

= 0)

Gate-body Leakage
Current (V

DS

= 0)

Gate Threshold Voltage
Static Drain-source On

Resistance

V

= Max Rating

DS

V

= Max Rating, TC = 125 °C

DS

V

= ± 16 V ±100 nA

GS

V

= VGS, ID = 250µA

DS

VGS = 10V, ID = 2 A
VGS = 5V, ID = 2 A

1V

0.044 0.055 Ω

0.051 0.065 Ω

1µA

10 µA

DYNAMIC

Symbol Parameter Test Conditions Min. Typ. Max. Unit

(1) Forward Transconductance VDS = 15 V

g

fs

C

iss

C

oss

C

rss

Input Capacitance
Output Capacitance 90 pF
Reverse Transfer

V

DS

Capacitance

= 25V, f = 1 MHz, VGS = 0

=2 A 5 S

, ID

330 pF

40 pF

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STS4DNFS30L

ELECTRICAL CHARACTERISTICS (CONTINUED)

1.
SWITCHING ON

Symbol Parameter Test Conditions Min. Typ. Max. Unit

V

t

d(on)

Q
Q
Q

t

r

gs
gd

Turn-on Delay Time
Rise Time 100 ns
Total Gate Charge

g

Gate-Source Charge 3.6 nC
Gate-Drain Charge 2 nC

SWITCHING OFF

Symbol Parameter Test Conditions Min. Typ. Max. Unit

t

d(off)

t

f

Turn-off Delay Time
Fall Time

SOURCE DRAIN DIODE

Symbol Parameter Test Conditions Min. Typ. Max. Unit

I

SD

I

SDM

VSD (1)

t

rr

Q

rr

I

RRM

Note: 1. Pulsed: Pu l se duration = 300 µs, duty cyc l e 1.5 %.

2. Pulse width li mited by safe operating area.

Source-drain Current 4 A

(2)

Source-drain Current (pulsed) 16 A
Forward On Voltage
Reverse Recovery Time

Reverse Recovery Charge 25 nC
Reverse Recovery Current 1.4 A

= 15 V, ID = 2 A

DD

R

= 4.7 Ω VGS = 5 V

G

(see test circuit, Figure 1)
V

= 24 V, ID = 4 A,

DD

VGS = 5 V

VDD = 15 V, ID = 2 A,
RG=4.7Ω, V

GS

= 5 V

(see test circuit, Figure 1)

ISD = 4 A, VGS = 0
I

= 4 A, di/dt = 100A/µs,

SD

V

= 15 V, Tj = 150°C

DD

(see test circuit, Figure 3)

11 ns

6.5 9 nC

25
22

1.2 V

35 ns

ns
ns

Safe Operating Area

Thermal Impedance

3/8

STS4DNFS30L

Output Characteristics Transfer Characteristics

Transconductance

Gate Charge vs Gate-source Voltage

Static Drain-source On Resistance

Capacitance Variations

4/8

STS4DNFS30L

Normalized Gate Thereshold Voltage vs Temp. Normalized On Resistance vs Temperature

Source-drain Diode Forward Characteristics

5/8

STS4DNFS30L

Resistive Load

Fig. 3: Test Circuit For Diode Recovery Behaviour

Fig. 2: Gate Charge test CircuitFig. 1: Switching Times Test Circuit For

6/8

SO-8 MECHANICAL DATA

STS4DNFS30L

DIM.

MIN. TYP. MAX. MIN. TYP. MAX.

A1.750.068
a1 0.1 0.25 0.003 0.009
a2 1.65 0.064
a3 0.65 0.85 0.025 0.033

b 0.35 0.48 0.013 0.018
b1 0.19 0.25 0.007 0.010

C 0.25 0.5 0.010 0.019
c1 45 (typ.)

D 4.8 5.0 0.188 0.196

E 5.8 6.2 0.228 0.244

e1.27 0.050
e3 3.81 0.150

F 3.8 4.0 0.14 0.157

L 0.4 1.27 0.015 0.050

M0.60.023

S 8 (max.)

mm inch

0016023

7/8

STS4DNFS30L

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its use. No license is granted by implication or otherwise under any patent or patent rights of STMicroelectronics. Specifications
mentioned in this publication are subject to change without notice. This publication supersedes and replaces all information
previously suppli ed. STMi croelect ronics pr oducts are not author ized for use as cr itical component s in li fe suppo rt devi ces or
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