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®
STS3DPFS30
STripFET
MAIN PRODUCT CHARACTERISTICS
MOSFET
SCHOTTKY
DESCRIPTION:
This product associates the latest low voltage
StripFET
Schottky diode. Such configuration is extremely
versatile in implementing, a large variety of DC-DC
converters for printers, portable equipment, and
cellular phones.
MOSFET ABSOLUTE MAXIMUM RATINGS
Symbol Parameter Value Unit
in p-channel version to a low drop
V
V
V
I
DM
P
Drain-source Voltage (VGS = 0) 30 V
DS
Drain- gate Voltage (RGS = 20 kΩ)30V
DGR
Gate-source Voltage ± 20 V
GS
I
Drain Current (continuous) at Tc = 25 oC3A
D
I
Drain Current (continuous) at Tc = 100 oC 1.9 A
D
(•) Drain Current (pulsed) 12 A
Total Dissipation at Tc = 25 oC2W
tot
MOSFET PLUS SCHOTTKY RECTIFIER
V
DSS
30V 0.09Ω 3A
I
F(AV)
3A 30V 0.51V
R
DS(on)
V
RRM
V
F(MAX)
PRELIMINARY DATA
I
D
SO-8
INTERNAL SCHEMATIC DIAGRAM
P - CHANNEL 30V - 0.065Ω - 3A - S0-8
SCHOTTKY ABSOLUTE MAXIMUM RATINGS
Symbol Parameter Value Unit
V
I
F(RMS)
I
F(AV)
I
FSM
I
RRM
I
RSM
dv/dt Critical Rate Of Rise Of Reverse Voltage 10000 V/µs
(•) Pulse width limited by safe operating area
Note: For the P-CHANNEL MOSFET actual polarity of voltages and current has to be reversed
February 1999
Repetitive Peak Reverse Voltage 30 V
RRM
RMS Forward Current 20 A
Average Forward Current TL=125 oC
δ =0.5
Surge Non Repetitive Forward Current tp= 10 ms
Sinusoidal
Repetitive Peak Reverse Current tp=2 µs
F=1 kHz
Non Repetitive Peak Reverse Current tp=100 µs1 A
3A
75 A
1A
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STS3DPFS30
THERMAL DATA
R
thj-amb
R
thj-amb
T
T
(*) Thermal Resistance Junction-ambient MOSFET
(*) Thermal Resistance Junction-ambientSCHOTTKY
Storage Temperature Range Maximum
stg
Junction Temperature
j
(*)
mounted on FR-4 board (steady state )
85
100
-65 to 150
150
o
C/W
o
C/W
o
o
C
C
MOSFET ELECTRICAL CHARACTERISTICS
= 25 oC unless otherwise specified)
(T
case
OFF
Symbol Parameter Test Conditions Min. Typ. Max. Unit
V
(BR)DSS
Drain-source
ID = 250 µA V
= 0 30 V
GS
Breakdown Voltage
I
DSS
I
GSS
Zero Gate Voltage
Drain Current (V
GS
= 0)
Gate-body Leakage
Current (V
DS
= 0)
= Max Rating
V
DS
V
= Max Rating Tc = 125 oC
DS
= ± 20 V ± 100 nA
V
GS
1
10
ON (∗)
Symbol Parameter Test Conditions Min. Typ. Max. Unit
V
GS(th)
R
DS(on)
Gate Threshold Voltage V
Static Drain-source On
= VGS ID = 250 µA234V
DS
VGS = 10V ID = 1.5 A 0.065 0.09 Ω
Resistance
I
D(on)
On State Drain Current VDS > I
V
= 10 V
GS
D(on)
x R
DS(on)max
3A
DYNAMIC
Symbol Parameter Test Conditions Min. Typ. Max. Unit
g
(∗) Forward
fs
Transconductance
C
C
C
Input Capacitance
iss
Output Capacitance
oss
Reverse Transfer
rss
Capacitance
VDS > I
V
DS
x R
D(on)
DS(on)max
= 25 V f = 1 MHz V
ID =1.5 A 5 S
= 0 1600
GS
500
125
µA
µA
pF
pF
pF
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STS3DPFS30
ELECTRICAL CHARACTERISTICS (continued)
SWITCHING ON
Symbol Parameter Test Conditions Min. Typ. Max. Unit
t
d(on)
Turn-on Delay Time
Rise Time
t
r
VDD = 15 V ID = 1.5 A
R
= 4.7 Ω V
G
GS
= 10 V
(Resistive Load, see fig. 3)
Q
Q
Q
Total Gate Charge
g
Gate-Source Charge
gs
Gate-Drain Charge
gd
V
= 15 V ID = 3 A V
DD
= 10 V 23
GS
SWITCHING OFF
Symbol Parameter Test Conditions Min. Typ. Max. Unit
t
r(Voff)
t
t
Off-voltage Rise Time
Fall Time
f
Cross-over Time
c
V
= 24 V ID = 3 A
clamp
R
= 4.7 Ω V
G
GS
= 10 V
(Inductive Load, see fig. 5)
SOURCE DRAIN DIODE
Symbol Parameter Test Conditions Min. Typ. Max. Unit
I
SD
I
SDM
V
SD
t
Q
I
RRM
(∗) Pulsed: Pulse duration = 300 µs, duty cycle 1.5 %
(•) Pulse width limited by safe operating area
Source-drain Current
(•)
Source-drain Current
(pulsed)
(∗) Forward On Voltage ISD = 3 A VGS = 0 2 V
Reverse Recovery
rr
Time
Reverse Recovery
rr
I
= 3 A di/dt = 100 A/µs
SD
V
= 15V Tj = 150 oC
DD
(see test circuit, figure 5)
Charge
Reverse Recovery
Current
15
29
30 nC
4.2
5.8
11
11
23
3
12
34
45
2.6
ns
ns
nC
nC
ns
ns
ns
A
A
ns
nC
Α
SCHOTTCKY STATIC ELET TRICAL CHARAC TERI STICS
Symbol Parameter Test Conditions Min. Typ. Max. Unit
I
(∗) Reversed Leakage
R
Current
V
(∗) Forward Voltage drop TJ= 25 oC IF=3A
F
TJ= 25 oC VR=30V
T
= 125 oC VR=30V 0.03
J
T
= 125 oC IF=3A 0.46
J
0.2
100
0.51
0.46
mA
mA
V
V
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STS3DPFS30
SO-8 MECHANICAL DATA
DIM.
MIN. TYP. MAX. MIN. TYP. MAX.
A1.750.068
a1 0.1 0.25 0.003 0.009
a2 1.65 0.064
a3 0.65 0.85 0.025 0.033
b 0.35 0.48 0.013 0.018
b1 0.19 0.25 0.007 0.010
C 0.25 0.5 0.010 0.019
c1 45 (typ.)
D 4.8 5.0 0.188 0.196
E 5.8 6.2 0.228 0.244
e1.27 0.050
e3 3.81 0.150
F 3.8 4.0 0.14 0.157
L 0.4 1.27 0.015 0.050
M0.60.023
S 8 (max.)
mm inch
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0016023
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STS3DPFS30
Information f urnished i s believed t o be accurate an d reliabl e. How ever, STMicroelect ronics assu mes no responsib ility fo r the consequen ces
of use of such information nor for any infringement of patents or other rights of third parties which may result from its use. No license is
granted by implication or otherwise under any patent or patent rights of STMicroelectronics. Specification mentioned in this publication are
subject to chan ge w ithout notice. This publicatio n su persedes a nd r eplaces al l inf ormati on previ ously suppl ied. STMicroelect ron ics produ cts
are not auth ori zed f or use as critical compon ents i n life sup port devic es or syst ems wi tho ut exp ress wri tten approval of STM icroelectronics.
The ST logo is a trademark of STMicroelectronics
© 1999 STMicroelectronics – Pr inted in Italy – All Rights Re served
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