Datasheet STS3DPF30L Datasheet (SGS Thomson Microelectronics)

Page 1
®
DUAL P - CHANNEL 30V - 0.145- 3A SO-8
TYPE V
STS3DPF30L 30 V < 0.16 3 A
TYPICAL R
STANDARD OUTLINE FOR EASY
DS(on)
DSS
= 0.145
AUTOMATED SURF ACE MOUNT ASSEMBLY
LOW THRESHOLD DRIVE
DESCRIPTION
This Power MOSFET is the second generation of STMicroelectronics unique "Single Feature Size " strip-based process. The resulting transistor shows extremely high packing density for low on­resistance, rugged avalanche characteristics and less critical alignment steps therefore a remarka­ble manufacturing reproducibility.
APPLICATIONS
BATTERY MANAGM ENT IN NOMADI C EQUIPMENT
POWER MANAGM EN T IN CELLULAR PHONES
DC-DC CONVERTER
R
DS(on)
I
D
STS3DPF30L
STripFET POWER MOSFET
PRELIMINARY DATA
SO-8
INTERNAL SCHEMATIC DIAGRAM
ABSOLUTE MAXIMUM RATINGS
Symbol Parameter Value Unit
V
V
V
I
DM
P
(•) Pulse width limited by safe operating area Note: For the P-CHANNEL MOSFET actual polarity of voltages and current has to be reversed
May 2000
Drain-source Voltage (VGS = 0) 30 V
DS
Drain- gate Voltage (RGS = 20 k)
DGR
Gate-source Voltage ± 20 V
GS
I
Drain Current (continuous) at Tc = 25 oC
D
Single Operation Drain Current (continuous) at T Single Operation
() Drain Current (pulsed) 12 A
Total Dissipation at Tc = 25 oC Dual Operation
tot
Total Dissipation at T
= 25 oC Single Operation
c
= 100 oC
c
30 V
3
1.9
2
1.6
A A
W W
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Page 2
STS3DPF30L
THERMAL DATA
R
thj-amb
T
T
*Thermal Resistance Junction-ambient Single Operation Dual Operation Maximum Operating Junction Temperature
j
Storage Temperature
stg
78
62.5 150
-55 to 150
o
C/W
o
C/W
o o
C C
(*)
Mounted on FR-4 board (t
ELECTRICAL CHARACTERISTICS
≤ 10sec)
(T
= 25 oC unless otherwise specified)
case
OFF
Symbol Parameter Test Conditions Min. Typ. Max. Unit
V
(BR)DSS
Drain-source
I
= 250 µA V
D
GS
= 0
30 V
Breakdown Voltage
I
I
ON (
DSS
GSS
Zero Gate Voltage Drain Current (V
Gate-body Leakage Current (V
)
DS
= 0)
GS
= 0)
= Max Rating
V
DS
V
= Max Rating Tc = 125 oC
DS
V
= ± 20 V
GS
1
10
± 100 nA
Symbol Parameter Test Conditions Min. Typ. Max. Unit
V
R
I
GS(th)
DS(on)
D(on)
Gate Threshold Voltage Static Drain-source On
Resistance
V
= VGS ID = 250 µA
DS
VGS = 10 V ID = 1.5 A V
= 4.5 V ID = 1.5 A
GS
On State Drain Current VDS > I
V
= 10 V
GS
D(on)
x R
DS(on)max
1 1.6 2.5 V
0.145
0.18
3A
0.16
0.19
DYNAMIC
µA µA
Ω Ω
Symbol Parameter Test Conditions Min. Typ. Max. Unit
g
() Forward
fs
VDS > I
D(on)
x R
DS(on)max
ID = 3 A 3 S
Transconductance
C C C
Input Capacitance
iss
Output Capacitance
oss
Reverse Transfer
rss
V
= 25 V f = 1 MHz V
DS
= 0 V 510
GS
170
55
Capacitance
2/5
pF pF pF
Page 3
STS3DPF30L
ELECTRICAL CHARACTERISTICS (continued)
SWITCHING ON
Symbol Parameter Test Conditions Min. Typ. Max. Unit
t
d(on)
Turn-on Delay Time Rise Time
t
r
V
= 15 V ID = 1.5 A
DD
= 4.7 Ω VGS = 4.5 V
R
G
(Resistive Load, see fig. 3)
Q Q Q
Total Gate Charge
g
Gate-Source Charge
gs
Gate-Drain Charge
gd
V
= 24 V ID = 3 A V
DD
= 4.5 V 5.5
GS
SWITCHING OFF
Symbol Parameter Test Conditions Min. Typ. Max. Unit
t
d(off)
Turn-off Delay Time Fall Time
t
f
V
= 15 V ID = 1.5 A
DD
= 4.7 Ω VGS = 4.5 V
R
G
(Resistive Load, see fig. 3)
SOURCE DRAIN DIODE
Symbol Parameter Test Conditions Min. Typ. Max. Unit
I
V
I
SDM
SD
Q
I
RRM
SD
t
Source-drain Current
(•)
Source-drain Current (pulsed)
(∗) Forward On Voltage ISD =3 A VGS = 0 1.2 V
Reverse Recovery
rr
Time Reverse Recovery
rr
I
= 3 A di/dt = 100 A/µs
SD
V
= 15 V Tj = 150 oC
DD
(see test circuit, fig. 5) Charge Reverse Recovery Current
14.5 37
1.7
1.8
88 23
3
12
T.B.D ns
ns ns
nC nC nC
ns ns
A A
µ
A
C
(∗) Pulsed: Pulse duration = 300 µs, duty cycle 1.5 % (•) Pulse width limited by safe operating area
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Page 4
STS3DPF30L
SO-8 MECHANICAL DATA
DIM.
MIN. TYP. MAX. MIN. TYP. MAX.
A1.750.068 a1 0.1 0.25 0.003 0.009 a2 1.65 0.064 a3 0.65 0.85 0.025 0.033
b 0.35 0.48 0.013 0.018 b1 0.19 0.25 0.007 0.010
C 0.25 0.5 0.010 0.019
c1 45 (typ.)
D 4.8 5.0 0.188 0.196
E 5.8 6.2 0.228 0.244
e1.27 0.050 e3 3.81 0.150
F 3.8 4.0 0.14 0.157
L 0.4 1.27 0.015 0.050
M0.60.023
S 8 (max.)
mm inch
4/5
0016023
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STS3DPF30L
Information furnished is believed to be accurate and reliable. However, STMicroelectronics assumes no responsibility for the consequences of use of such inform ation nor for any in fringe ment o f patents or other rig hts of third par ties wh ich may result from its u se. N o li cen se is granted by implication or otherwise under any patent or patent rights of STMicroelectronics. Specification mentioned in this publication are subject to change without notice. This publication supersedes and replaces all information previously supplied. STMicroelectronics products are not authorized f or use as critical components in life support devices or systems without express written approval of STMicroelectronics.
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