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®
N - CHANNEL 30V - 0.055Ω - 3.5A - SO-8
TYPE V
STS3DNF30L 30 V < 0.065 Ω 3.5 A
■
TYPICAL R
■
STANDARD OUTLINE FOR EASY
DS(on)
DSS
= 0.055
AUTOMATED SURFAC MOUNT AS SEM BLY
■
LOW THRESHOLD DRIVE
DESCRIPTION
This Power MOSFET is the second generation of
STMicroelectronics unique "Single Feature
Size" strip-based process. The resulting transistor shows extremely high packing density for
low on-resistance, rugged avalanche characteristics and less critical alignment steps therefore
a remarkable manufacturing reproducibility.
Ω
R
DS(on)
I
D
STS3DNF30L
PowerMESH MOSFET
PRELIMINARY DATA
SO-8
APPLICATIONS
■
DC MOTOR DR IVE
■
DC-DC CONVERTERS
■
BATTERY MANAGEMENT IN NOMADIC
INTERNAL SCHEMATIC DIAGRAM
EQUIPMENT
■
POWER MANAGEMENT IN
PORTABLE/DESKTOP PC
S
ABSOLUTE MAXIMUM RATINGS
Symbol Parameter Value Unit
V
V
V
I
DM
P
(•) Pulse width limited by safe operating area
Drain-source Voltage (VGS = 0) 30 V
DS
Drain- gate Voltage (RGS = 20 kΩ)30V
DGR
Gate-source Voltage ± 20 V
GS
I
Drain Current (continuous) at Tc = 25 oC
D
Single Operation
Drain Current (continuous) at T
Single Operation
(•) Drain Current (pulsed) 14 A
Total Dissipation at Tc = 25 oC Dual Operation
tot
Total Dissipation at T
= 25 oC Single Operation
c
= 100 oC
c
3.5
2.2
2
1.6
A
A
W
W
December 1998
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STS3DNF30L
THERMAL DATA
R
thj-amb
T
T
(*) Mounted on FR-4 board (t ≤ 10 sec)
*Thermal Resistance Junction-ambient Singe Operation Max
Thermal Resistance Junction-ambient Dual Operation Max
Maximum Lead Temperature For Soldering Purpose
J
Storage Temperature
stg
78
62.5
150
-55 to 150
o
C/W
o
C/W
o
o
C
C
ELECTRICAL CHARACTERISTICS
= 25 oC unless otherwise specified)
(T
case
OFF
Symbol Parameter Test Conditions Min. Typ. Max. Unit
V
(BR)DSS
Drain-source
ID = 250 µA V
= 0 30 V
GS
Breakdown Voltage
I
DSS
I
GSS
Zero Gate Voltage
Drain Current (V
GS
= 0)
Gate-Source Leakage
Current (V
DS
= 0)
= Max Rating
V
DS
V
= Max Rating Tc = 125 oC
DS
= ± 20 V ±100 nA
V
GS
1
10
ON (∗)
Symbol Parameter Test Conditions Min. Typ. Max. Unit
V
GS(th)
R
DS(on)
I
D(on)
Gate Threshold Voltage V
Static Drain-source On
Resistance
= V
DS
VGS = 10 V ID = 1.75 A
V
= 4.5 V ID = 1.75 A
GS
On State Drain Current VDS > I
V
= 10 V
GS
GS ID
D(on)
x R
DS(on)max
= 250 µA 1 1.7 2.5 V
0.055
0.06
0.065
0.09
3.5 A
DYNAMIC
Symbol Parameter Test Conditions Min. Typ. Max. Unit
g
(∗) Forward
fs
Transconductance
C
C
C
Input Capacitance
iss
Output Capacitance
oss
Reverse Transfer
rss
Capacitance
VDS > I
V
DS
x R
D(on)
DS(on)max
= 25 V f = 1 MHz V
ID = 6 A 6 S
= 0 420
GS
62
20
550
80
30
µA
µA
Ω
Ω
pF
pF
pF
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STS3DNF30L
ELECTRICAL CHARACTERISTICS (continued)
SWITCHING ON
Symbol Parameter Test Conditions Min. Typ. Max. Unit
t
d(on)
Q
Q
Q
Turn-on Time
Rise Time
t
r
Total Gate Charge
g
Gate-Source Charge
gs
Gate-Drain Charge
gd
SWITCHING OFF
Symbol Parameter Test Conditions Min. Typ. Max. Unit
t
r(Voff)
t
Off-voltage Rise Time
Fall Time
t
f
Cross-over Time
c
SOURCE DRAIN DIODE
Symbol Parameter Test Conditions Min. Typ. Max. Unit
I
SD
I
SDM
V
SD
t
Q
I
RRM
(∗) Pulsed: Pulse duration = 300 µs, duty cycle 1.5 %
(•) Pulse width limited by safe operating area
Source-drain Current
(•)
Source-drain Current
(pulsed)
(∗) Forward On Voltage ISD = 3.5 A VGS = 0 1.2 V
Reverse Recovery
rr
Time
Reverse Recovery
rr
Charge
Reverse Recovery
Current
V
= 15 V ID = 2 A
DD
R
= 4.7 Ω VGS = 4.5 V
G
V
= 24 V ID =4 A V
DD
V
= 24 V ID = 4 A
DD
R
= 4.7 Ω VGS = 4.5 V
G
I
= 4 A di/dt = 100 A/µs
SD
V
= 15 V Tj = 150 oC
DD
= 4.5 V 8
GS
13
30
3.2
2.6
5
9
20
23
0.134
1.2
17
40
11 nC
7
12
26
3.5
14
ns
ns
nC
nC
ns
ns
ns
A
A
ns
µ
A
C
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Page 4
STS3DNF30L
SO-8 MECHANICAL DATA
DIM.
MIN. TYP. MAX. MIN. TYP. MAX.
A1.750.068
a1 0.1 0.25 0.003 0.009
a2 1.65 0.064
a3 0.65 0.85 0.025 0.033
b 0.35 0.48 0.013 0.018
b1 0.19 0.25 0.007 0.010
C 0.25 0.5 0.010 0.019
c1 45 (typ.)
D 4.8 5.0 0.188 0.196
E 5.8 6.2 0.228 0.244
e1.27 0.050
e3 3.81 0.150
F 3.8 4.0 0.14 0.157
L 0.4 1.27 0.015 0.050
M0.60.023
S 8 (max.)
mm inch
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0016023
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STS3DNF30L
Information furnished is believed to be accurate and reliable. However, STMicroelectronics assumes no responsibility for the consequences
of use of such inform ation nor for any in fringe ment o f patents or other rig hts of third par ties wh ich may result from its u se. N o li cen se is
granted by implication or otherwise under any patent or patent rights of STMicroelectronics. Specification mentioned in this publication are
subject to change without notice. This publication supersedes and replaces all information previously supplied. STMicroelectronics products
are not authorized f or use as critical components in life support devices or systems without express written approval of STMicroelectronics.
The ST logo is a trademark of STMicroelectronics
© 1998 STMicroelectro nics – Printed in Italy – All Rights Reserved
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