Datasheet STS2DNFS30L Datasheet (SGS Thomson Microelectronics)

STripFET™ II MOSFET PLUS SCHOTTKY RECTIFIER

MAIN PRODUCT CHARACTERISTICS
MOSFET

V

DSS

30 V < 0.11 Ω 3 A

R

DS(on)

STS2DNFS30L

N-CHANNEL 30V - 0.09Ω - 3A SO-8

PRELIMINARY DATA

I

D

SCHOTTKY

I

F(AV )

1 A 30 V 0.46 V

V

RRM

V

F(MAX)

SO-8

DESCRIPTION

This product associates the latest low voltage
STripFET™ in n-channel version to a low drop

INTERNAL SCHEMATIC DIAGRAM

Schottky diode. Such configuration is extremely ver­satile in implementing, a large variety of DC-DC
converters for printers, portable equipment, and cel­lular phones.

MOSFET ABSOLUTE MAXIMUM RATINGS

Symbol Parameter Value Unit

V

DS

V

DGR

V

GS

I

D

I

D

I

(●)

DM

P

TOT

Drain-source Voltage (VGS = 0)
Drain-gate Voltage (RGS = 20 kΩ)
Gate- source Voltage ± 15 V

Drain Current (continuos) at TC = 25°C
Drain Current (continuos) at TC = 100°C
Drain Current (pulsed) 12 A
Total Dissipation at TC = 25°C

30 V
30 V

3A

1.9 A

2W

SCHOTTKY ABSOLUTE MAXIMUM RATINGS

Symbol Parameter Value Unit

V

RRM

I

F(RMS)

I

F(AV)

I

FSM

I

RSM

dv/dt

(•)Pu l se width limited by safe operating area

August 2001

Repetitive Peak Reverse Voltage 30 V
RMS Forward Current 7 A
Average Forward Current TL = 135°C

Surge Non Repetitive Forward Current tp = 10 ms

Non Repetitive Peak Reverse Current
Critical Rate Of Rise Of Reverse Voltage 10000 V/µs

δ = 0.5

Sinusoidal
tp = 100 µs1 A

1A

45 A

1/6

STS2DNFS30L

THERMA L D ATA

Rthj-amb (*)Thermal Resistance Junction-ambient MOSFET 62.5 °C/W
Rthj-amb (*)Thermal Resistance Junction-ambient SCHOTTKY Maximum 100 °C/W

T

stg

T

l

MOSFET ELECTRICAL CHARACTERISTICS (TCASE = 25 °C UNLESS OTHERWISE SPECIFIED)
OFF

Symbol Parameter Test Conditions Min. Typ. Max. Unit

V

(BR)DSS

I

DSS

I

GSS

ON (1)

Symbol Parameter Test Conditions Min. Typ. Max. Unit

V

GS(th)

R

DS(on)

Storage Temperature Range -55 to 150 °C
Junction Temperature 150 °C

(*) Mounted on FR-4 board (Steady State)

Drain-source

ID = 250 µA, VGS = 0 30 V

Breakdown Voltage
Zero Gate Voltage

Drain Current (V

GS

= 0)

Gate-body Leakage
Current (V

DS

= 0)

Gate Threshold Voltage
Static Drain-source On

Resistance

V

= Max Rating

DS

V

= Max Rating, TC = 125 °C

DS

V

= ± 15 V ±100 nA

GS

V

= VGS, ID = 250µA

DS

VGS = 10V, ID = 1.5 A
VGS = 4.5V, ID = 1.5 A

1V

0.09 0.11 Ω

0.13 0.15 Ω

1µA

10 µA

DYNAMIC

Symbol Parameter Test Conditions Min. Typ. Max. Unit

(1) Forward Transconductance VDS = 15 V

g

fs

C

iss

C

oss

C

rss

Input Capacitance
Output Capacitance 45 pF
Reverse Transfer

Capacitance

V

DS

= 25V, f = 1 MHz, VGS = 0

= 1.5 A 2.5 S

, ID

121 pF

11 pF

2/6

STS2DNFS30L

ELECTRICAL CHARACTERISTICS (CONTINUED)

1.
SWITCHING ON

Symbol Parameter Test Conditions Min. Typ. Max. Unit

V

t

d(on)

Q
Q
Q

t

r

gs
gd

Turn-on Delay Time
Rise Time 20 ns
Total Gate Charge

g

Gate-Source Charge 1.7 nC
Gate-Drain Charge 0.9 nC

SWITCHING OFF

Symbol Parameter Test Conditions Min. Typ. Max. Unit

t

d(off)

t

f

Turn-off Delay Time
Fall Time

SOURCE DRAIN DIODE

Symbol Parameter Test Conditions Min. Typ. Max. Unit

I

SD

I

SDM

VSD (1)

t

rr

Q

rr

I

RRM

Note: 1. Pulsed: Pu l se duration = 300 µs, duty c yc l e 1.5 %.

2. Pulse width li mited by safe operating area.

Source-drain Current 3 A

(2)

Source-drain Current (pulsed) 12 A
Forward On Voltage
Reverse Recovery Time

Reverse Recovery Charge 8.1 nC
Reverse Recovery Current 0.85 A

= 15 V, ID = 1.5 A

DD

R

= 4.7 Ω VGS = 4.5 V

G

(see test circuit, Figure 3)
V

= 24 V, ID = 3 A,

DD

VGS = 4.5 V

VDD = 15 V, ID = 1.5 A,
RG=4.7Ω, V

GS

= 4.5 V

(see test circuit, Figure 3)

ISD = 3 A, VGS = 0
I

= 3 A, di/dt = 100A/µs,

SD

V

= 30 V, Tj = 150°C

DD

(see test circuit, Figure 5)

19 ns

4.5 6 nC

12

8

1.2 V

19 ns

ns
ns

SCHOTTCKY STATIC ELETTRICAL CHARACTERISTICS

Symbol Parameter Test Conditions Min. Typ. Max. Unit

(*) Reve rsed Leak age Curren t TJ = 25 °C , VR = 30 V

I

R

TJ = 125 °C , VR = 30 V

(*) Forward Voltage Drop TJ = 25 °C , IF = 1 A

V

F

T

= 125 °C , IF = 1 A 0.37

J

1.5

10
10

0.55

0.46

µA

mA

V
V

3/6

STS2DNFS30L

Fig. 2: Unclamped Inductive WaveformFig. 1: Unclamped Inductive Load Test Circuit

Fig. 3: Switching Times Test Circuit For

Resistive Load

Fig. 5: Test Circuit For Inductive Load Switching
And Diode Recovery Times

Fig. 4: Gate Charge test Circuit

4/6

SO-8 MECHANICAL DATA

STS2DNFS30L

DIM.

MIN. TYP. MAX. MIN. TYP. MAX.

A1.750.068
a1 0.1 0.25 0.003 0.009
a2 1.65 0.064
a3 0.65 0.85 0.025 0.033

b 0.35 0.48 0.013 0.018
b1 0.19 0.25 0.007 0.010

C 0.25 0.5 0.010 0.019
c1 45 (typ.)

D 4.8 5.0 0.188 0.196

E 5.8 6.2 0.228 0.244

e1.27 0.050
e3 3.81 0.150

F 3.8 4.0 0.14 0.157

L 0.4 1.27 0.015 0.050

M0.60.023

S 8 (max.)

mm inch

0016023

5/6

STS2DNFS30L

6/6

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