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STS1NC60
N-CHANNEL 600V - 12Ω - 0.3A - SO-8
PowerMESH™II MOSFET
TYPE V
DSS
R
DS(on)
I
D
STS1NC60 600 V < 15 Ω 0.3 A
■ TYPICAL R
■ EXTREMELY HIGH dv/d t C APABILITY
■ 100% AVALANCHE TESTED
■ NEW HIGH VOLTAGE BENCHMARK
■ GATE CHARGE MINIMIZED
(on) = 12Ω
DS
DESCRIPTION
The PowerMESH
generation of MESH OVERLAY
™II is the evolution of the first
™. The layout re-
finements introduced greatly improve the Ron*area
figure of merit while keeping the device at the lea ding edge for what concerns swithing speed, gate
charge and ruggedness.
APPLICATIONS
■ AC ADAPTORS AND BATTERY CHARGE R S
■ SWITH MODE POWER SUPPLIES ( SMPS)
SO-8
INTERNAL SCHEMATIC DIAGRAM
ABSOLUTE MAXIMUM RATINGS
Symbol Parameter Value Unit
V
DS
V
DGR
V
GS
I
D
I
D
I
DM
P
TOT
dv/dt (1) Peak Diode Recovery voltage slope 3 V/ns
T
stg
T
j
(•)Pu l se width limite d by safe operat i ng area
.
Drain-source Voltage (VGS = 0)
Drain-gate Voltage (RGS = 20 kΩ)
600 V
600 V
Gate- source Voltage ±30 V
Drain Current (continuos) at TC = 25°C
Drain Current (continuos) at TC = 100°C
(●)
Drain Current (pulsed) 1.2 A
Total Dissipation at TC = 25°C
0.3 A
0.18 A
2.5 W
Derating Factor 0.02 W/°C
Storage Temperature –60 to 150 °C
Max. Operating Junction Temperature 150 °C
(1)ISD ≤0.3A, di/dt ≤100A/µs, VDD ≤ V
(BR)DSS
, Tj ≤ T
JMAX
1/8July 2001
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STS1NC60
THERMA L D ATA
Rthj-pcb Thermal Resistance Junction-PC Board 50 °C/W
Rthj-amb Thermal Resistance Junction-ambient Max
(Surface Mounted)
T
l
Maximum Lead Temperature For Soldering Purpose 260 °C
AVALANCHE CHARACTERISTICS
Symbol Parameter Max Value Unit
I
AR
E
AS
Avalanche Current, Repetitive or Not-Repetitive
(pulse width limited by T
max)
j
Single Pulse Avalanche Energy
(starting T
= 25 °C, ID = IAR, VDD = 50 V)
j
ELECTRICAL CHARACTERISTICS (TCASE = 25 °C UNLESS OTHERWISE SPECIFIED)
OFF
Symbol Parameter Test Conditions Min. Typ. Max. Unit
V
(BR)DSS
I
DSS
I
GSS
Drain-source
Breakdown Voltage
Zero Gate Voltage
Drain Current (V
GS
Gate-body Leakage
Current (V
DS
= 0)
= 0)
ID = 250 µA, VGS = 0 600 V
V
= Max Rating
DS
V
= Max Rating, TC = 125 °C
DS
V
= ± 30V ±100 nA
GS
60 °C/W
0.3 A
60 mJ
1µA
10 µA
(1)
ON
Symbol Parameter Test Conditions Min. Typ. Max. Unit
V
V
GS(th)
R
DS(on)
Gate Threshold Voltage
Static Drain-source On
= VGS, ID = 250µA
DS
234V
VGS = 10V, ID = 0.5 A 12
15 Ω
Resistance
DYNAMIC
Symbol Parameter Test Conditions Min. Typ. Max. Unit
(1) Forward Transconductance VDS > I
g
fs
C
iss
C
oss
C
rss
Input Capacitance
Output Capacitance 18 pF
Reverse Transfer
Capacitance
ID= 0.5 A
V
DS
D(on)
x R
DS(on)max,
= 25V, f = 1 MHz, VGS = 0
0.87 S
108 pF
2.5 pF
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STS1NC60
ELECTRICAL CHARACTERISTICS (CONTINUED)
SWITCHING ON
Symbol Parameter Test Conditions Min. Typ. Max. Unit
t
d(on)
t
r
Q
g
Q
gs
Q
gd
SWITCHING OFF
Symbol Parameter Test Conditions Min. Typ. Max. Unit
t
r(Voff)
t
f
t
c
SOURCE DRAIN DIODE
Symbol Parameter Test Conditions Min. Typ. Max. Unit
I
SD
I
SDM
VSD (1)
t
rr
Q
rr
I
RRM
Note: 1. Pulsed: Pu l se duration = 300 µs, duty cycle 1.5 %.
2. Pulse width li mited by safe operating area .
Turn-on Delay Time
Rise Time 8 ns
Total Gate Charge
Gate-Source Charge 3.4 nC
V
= 300V, ID = 0.5A
DD
R
= 4.7Ω VGS = 10V
G
(see test circuit, Figure 3)
V
= 480V, ID = 1A,
DD
V
= 10V
GS
7.2 ns
7.3 10 nC
Gate-Drain Charge 2.5 nC
V
Off-voltage Rise Time
Fall Time 11 ns
= 480V, ID = 1 A,
DD
RG=4.7Ω, V
GS
= 10V
(see test circuit, Figure 5)
33 ns
Cross-over Time 43 ns
Source-drain Current 0.3 A
(2)
Source-drain Current (pulsed) 1.2 A
Forward On Voltage
Reverse Recovery Time
Reverse Recovery Charge 720 µC
ISD = 0.3 A, VGS = 0
I
= 1A, di/dt = 100A/µs,
SD
VDD = 25V, Tj = 150°C
(see test circuit, Figure 5)
450 ns
Reverse Recovery Current 3.2 A
1.6 V
Ther m al Imp e danceSafe Operating Area
3/8
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STS1NC60
Output Characteristics Transfer Characteristics
.
Tranconductance
Static Drain-Source On Resistance
Gate Charge vs Gate-source Voltage Capacitance Variations
4/8
Page 5
Source-drain Diode Forward Characteristics
STS1NC60
Normalized On Resistance vs Temperatur eNormalized Gate Thereshold Voltage vs Temp.
5/8
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STS1NC60
Fig. 2: Unclamped Inductive WaveformFig. 1: Unclamped Inductive Load Test Circuit
Fig. 3: Switching Times Test Circuit For
Resistive Load
Fig. 5: Test Circuit For Inductive Load Switching
And Diode Recovery Times
Fig. 4: Gate Charge test Circuit
6/8
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SO-8 MECHANICAL DATA
STS1NC60
DIM.
MIN. TYP. MAX. MIN. TYP. MAX.
A1.750.068
a1 0.1 0.25 0.003 0.009
a2 1.65 0.064
a3 0.65 0.85 0.025 0.033
b 0.35 0.48 0.013 0.018
b1 0.19 0.25 0.007 0.010
C 0.25 0.5 0.010 0.019
c1 45 (typ.)
D 4.8 5.0 0.188 0.196
E 5.8 6.2 0.228 0.244
e1.27 0.050
e3 3.81 0.150
F 3.8 4.0 0.14 0.157
L 0.4 1.27 0.015 0.050
M0.60.023
S 8 (max.)
mm inch
0016023
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STS1NC60
Information furnished is believed to be accurate and reliable. However, STMicroelectronics assumes no responsibility for the consequences
of use of such informa tion n or for an y infring ement of patent s or other rig hts of third part ies which may resu lt from its use . No l i cen se i s
granted by implication or otherwise under any patent or patent rights of STMicroelectronics. Specification mentioned in this publication are
subject to change without notice. This publication supersedes and replaces all information previously supplied. STMicroelectronics products
are not authorized for use as critical compo nents in life support devices or systems without express written approval of STMicroelectronics.
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