Datasheet STS12NF30L Datasheet (SGS Thomson Microelectronics)



STS12NF30L

N - CHANNEL 30V - 0.0085Ω - 12A SO-8

STripFET POWER MOSFET

TYPE V

ST S12NF30L 30 V < 0 . 01 Ω 12 A

■ TYPICALR

■ STANDARD OUTLINEFOR EASY

DS(on)

DSS

= 0.0085 Ω

R

DS(on)

I

D

AUTOMATEDSURFACEMOUNTASSEMBLY

■ LOW THRESHOLDDRIVE

DESCRIPTION

This Power MOSFET is the second generation of
STMicroelectronics unique ” Single Feature
Size

”

strip-based process. The resulting
transistor shows extremely high packing density
for low on-resistance, rugged avalanche
characteristics and less critical alignment steps
therefore a remarkable manufacturing
reproducibility.

APPLICATIONS

■ DC MOTOR DRIVE

■ DC-DCCONVERTERS

■ BATTERYMANAGMENTIN NOMADIC

EQUIPMENT

■ POWERMANAGEMENT IN

PORTABLE/DESKTOPPC

s

SO-8

INTERNAL SCHEMATIC DIAGRAM

ABSOLUTE MAXIMUM RATINGS

Symb o l Parameter Value Unit

V

V

V

I

DM

P

(•) Pulse width limited by safeoperating area

May 1999

Drain-source Voltage (VGS=0) 30 V

DS

Drain- gat e Voltage (RGS=20kΩ)30V

DGR

Gate-s ource Voltage ± 20 V

GS

Drain Current (co nt inu ous ) at Tc = 25oC

I

D

Drain Current (co nt inu ous ) at T

(•) Drain Current (pulsed) 48 A

Tot al Dissipat ion at Tc=25oC 2.5 W

tot

=100oC

c

12

7.5

A
A

1/8

STS12NF30L

THERMAL DATA

R

thj-amb

T

Tj

(*)T hermal R es istance Junction-am bie nt

Maximum O perating Juncti on Temperat ur e

stg

St orage Tempe ra tur e

50

150

-55 to 150

o

C/W

o
o

C
C

(*)

Mountedon FR-4board (t

ELECTRICAL CHARACTERISTICS (T

≤ 10

sec)

=25oC unless otherwisespecified)

case

OFF

Symbol Parameter Test Conditions Min. Typ. Max. Unit

V

(BR)DSS

Drain-source

ID=250µAVGS=0 30 V

Break dow n Volt age

I

DSS

I

GSS

Zero Gate Voltage
Drain Current (V

GS

Gat e- bod y Leakage
Current (V

DS

=0)

=0)

V

=MaxRating

DS

=MaxRating Tc=125oC

V

DS

V

=± 20 V

GS

1

10

100 nA

±

ON (∗)

Symbol Parameter Test Conditions Min. Typ. Max. Unit

V

GS(th)

R

DS(on)

I

D(on)

Gate Threshold Voltage VDS=VGSID= 250µA11.62.5V
Sta t ic Drain-sour c e On

Resistance

VGS=10V ID=6A

=4.5V ID=6A

V

GS

On State Drain Current VDS>I

D(on)xRDS(on )max

0.0085

0.01

12 A

0.01

0.012ΩΩ

VGS=10V

DYNAMIC

µA
µA

Symbol Parameter Test Conditions Min. Typ. Max. Unit

g

(∗)Forward

fs

VDS>I

D(on)xRDS(on )maxID

=6A 20 S

Tr ansc on duc tance

C

C

C

Input Capacit ance

iss

Out put Capacitance

oss

Reverse Transfer

rss

VDS=25V f=1MHz VGS= 0 V 2400

590
200

Capacit a nc e

2/8

pF
pF
pF

STS12NF30L

ELECTRICAL CHARACTERISTICS

(continued)

SWITCHING ON

Symbol Parameter Test Conditions Min. Typ. Max. Unit

t

d(on)

Tur n-on Delay Time
Rise Time

t

r

VDD=15V ID=6A
R

=4.7

G

Ω

VGS=4.5V

35
90

(Resis t iv e Load, see f ig. 3 )

Q
Q
Q

Tot al Gate Char ge

g

Gat e- Source Charge

gs

Gate-Drain Charge

gd

VDD=24V ID=12A VGS=4.5V 35

9

18

50 nC

SWITCHING OFF

Symbol Parameter Test Conditions Min. Typ. Max. Unit

t

d(off)

Tur n-of f Delay Time

t

Fall T ime

f

VDD=15V ID=6A

=4.7 Ω VGS=4.5V

R

G

90
45

(Resis t iv e Load, see f ig. 3 )

t

r(Voff)

t

t

Off-volt age Rise Time
Fall T ime

f

Cross-over Time

c

V

=24V ID=12A

clamp

=4.7 Ω VGS=4.5V

R

G

(Indu ct iv e Load, see fig . 5)

35
35
80

SOURCEDRAINDIODE

Symbol Parameter Test Conditions Min. Typ. Max. Unit

I

V

I

SDM

SD

Q

I

RRM

SD

t

Source-drain Current

(•)

Source-drain Current

12
48

(pulsed)

(∗)ForwardOnVoltage ISD=12A VGS=0 1.2 V

Reverse Recovery

rr

Time
Reverse Recovery

rr

ISD= 12 A di/dt = 100 A /µs

=15V Tj=150oC

V

DD

(see test circuit, fig. 5)

45

70
Charge
Reverse Recovery

3

Current

ns
ns

nC
nC

ns
ns

ns
ns
ns

A
A

ns

nC

A

(∗) Pulsed:Pulse duration = 300 µs, duty cycle 1.5%
(•) Pulse width limited by safe operating area

SafeOperating Area ThermalImpedance

3/8

STS12NF30L

OutputCharacteristics

Transconductance

TransferCharacteristics

Static Drain-sourceOn Resistance

Gate Charge vs Gate-sourceVoltage

4/8

CapacitanceVariations

STS12NF30L

NormalizedGate ThresholdVoltage vs
Temperature

Source-drainDiode Forward Characteristics

NormalizedOn Resistancevs Temperature

5/8

STS12NF30L

Fig. 1:

UnclampedInductiveLoad TestCircuit

Fig. 3: SwitchingTimes Test Circuits For
ResistiveLoad

Fig. 2:

UnclampedInductiveWaveform

Fig. 4: Gate Chargetest Circuit

Fig. 5:

Test Circuit For InductiveLoad Switching

And Diode Recovery Times

6/8

SO-8 MECHANICAL DATA

STS12NF30L

DIM.

MIN. TYP. MAX. MIN. TYP. MAX.

A 1.75 0.068
a1 0.1 0.25 0.003 0.009
a2 1.65 0.064
a3 0.65 0.85 0.025 0.033

b 0.35 0.48 0.013 0.018
b1 0.19 0.25 0.007 0.010

C 0.25 0.5 0.010 0.019
c1 45 (typ.)

D 4.8 5.0 0.188 0.196

E 5.8 6.2 0.228 0.244

e 1.27 0.050
e3 3.81 0.150

F 3.8 4.0 0.14 0.157

L 0.4 1.27 0.015 0.050

M 0.6 0.023

S 8 (max.)

mm inch

0016023

7/8

STS12NF30L

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subjecttochange withoutnotice.Thispublication supersedes and replaces all informationpreviously supplied. STMicroelectronicsproducts
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