Datasheet STS11NF3LL Datasheet (SGS Thomson Microelectronics)



STS11NF3LL

N-CHANNEL 30V - 0.009

LOW GATE CHARGE STripFET POWER MOSFET

TYPE V

ST S11NF3LL 30 V < 0.011 Ω 11 A

■ TYPICALR

■ OPTIMAL R

■ CONDUCTIONLOSSESREDUCED

■ SWITCHINGLOSSESREDUCED

DSS

= 0.011 Ω @ 4.5V

DS(on)

DS(on)xQg

DESCRIPTION

This applicationspecific Power Mosfet is the third
generation of STMicroelectronics unique ”Single
Feature Size” strip-based process. The resul­ting transistor shows the best trade-off between
on-resistance and gate charge. When used as
high and low side in buck regulators, it gives the
best performancein termsof both conductionand
switching losses. This is extremely important for
motherboardswhere fast switching and high effi­ciencyare of paramount importance.

APPLICATIONS

■ SPECIFICALLYDESIGNED AND

OPTIMISEDFOR HIGH EFFICIENCYCPU
CORE DC/DC CONVERTERSFOR MOBILE
PCs

R

DS(on)

I

D

TRADE-OFF@ 4.5V

Ω

- 11A SO-8

PRELIMINARY DATA

SO-8

INTERNAL SCHEMATIC DIAGRAM

ABSOLUTE MAXIMUM RATINGS

Symb o l Parameter Value Unit

V

V

V

I

DM

P

(•) Pulse width limited by safe operating area

May 2000

Drain-source Voltage (VGS=0) 30 V

DS

Drain- gate Voltage (RGS=20kΩ)30V

DGR

Gate-s ource Voltage ± 15 V

GS

Drain Curr ent (co nt inu ous ) at T c = 25oC

I

D

Drain Curr ent (co nt inu ous ) at T

(•) Drain Curr ent (puls ed) 44 A

Tot al Dis sipation at Tc=25oC 2.5 W

tot

=100oC

c

11

7

A
A

1/6

STS11NF3LL

THERMAL DATA

R

thj-amb

T

T

(*)Mountedon FR-4 board (t ≤ 10sec)

(*)T hermal Resistance Junction-ambie nt

Maximum Ope ra t ing Junct i on Temperatur e

j

stg

St orage Te m pe ra t ure

50

150

-65 to 150

o

C/W

o
o

C
C

ELECTRICAL CHARACTERISTICS

=25oC unless otherwisespecified)

(T

case

OFF

Symbol Parameter Test Conditions Min. Typ. Max. U nit

V

(BR)DSS

Drain-source

ID=250µAVGS=0 30 V

Break dow n V o lt age

ON (

I

DSS

I

GSS

∗)

Zero Gate Voltage
Drain Cur re nt ( V

GS

Gat e- bod y L eakage
Current (V

DS

=0)

=0)

V

=MaxRating

DS

=MaxRating Tc=125oC

V

DS

= ± 20 V ± 100 nA

V

GS

1

10

Symbol Parameter Test Conditions Min. Typ. Max. U nit

V

GS(th)

R

DS(on)

I

D(on)

Gate Threshold Voltage VDS=VGSID= 250 µA1 V
Sta t ic Drain -s ource O n

Resistance

VGS=10V ID=5.5A

=4.5V ID=5.5A

V

GS

On State Drain Current VDS>I

D(on)xRDS(on)max

0.009

0.011

11 A

0.011

0.013

VGS=10V

DYNAMIC

Symbol Parameter Test Conditions Min. Typ. Max. U nit

g

(∗)Forward

fs

Tr ansc on duc tance

C

C

C

Input Capac i t ance

iss

Out put Capacitance

oss

Reverse Tr ansfer

rss

Capacit a nc e

VDS>I

D(on)xRDS(on)maxID

=5.5A 20 S

VDS=25V f=1MHz VGS= 0 V 1700

500
115

µA
µA

Ω
Ω

pF
pF
pF

2/6

STS11NF3LL

ELECTRICAL CHARACTERISTICS

(continued)

SWITCHINGON

Symbol Parameter Test Conditions Min. Typ. Max. U nit

t

d(on)

Tur n-on Delay Tim e
Rise Ti me

t

r

VDD=15V ID=5.5A
R

=4.7

G

Ω

VGS=4.5V

47
60

(Resis t iv e Loa d, s ee fig.3)

Q
Q
Q

Tot al Gat e Charge

g

Gat e- Source Char g e

gs

Gate-Drain Charge

gd

VDD=24V ID=11A VGS=4.5V 25

10
10

33 nC

SWITCHINGOFF

Symbol Parameter Test Conditions Min. Typ. Max. U nit

t

d(off)

Tur n-of f Delay T im e

t

Fall T ime

f

VDD=24V ID=5.5A

=4.7 Ω VGS=4.5V

R

G

34
24

(Resis t iv e Loa d, s ee fig.3)

SOURCEDRAINDIODE

Symbol Parameter Test Conditions Min. Typ. Max. U nit

I

SD

I

SDM

V

SD

t

Q

I

RRM

(∗) Pulsed: Pulse duration = 300 µs, duty cycle 1.5 %
(•) Pulse width limited by safe operatingarea

Source-drain Current

(•)

Source-drain Current

11
44

(pulsed)

(∗)ForwardOnVoltage ISD=11A VGS=0 1.5 V

Reverse Recovery

rr

Time
Reverse Recovery

rr

ISD= 11 A di/dt = 100 A/µs

=15V Tj=150oC

V

DD

(Resis t iv e Loa d, s ee fig.5)

40

52
Charge
Reverse Recovery

2.4

Current

ns
ns

nC
nC

ns
ns

A
A

ns

nC

A

3/6

STS11NF3LL

Fig. 1:

UnclampedInductiveLoad Test Circuit

Fig. 3: SwitchingTimes Test Circuits For
ResistiveLoad

Fig. 2:

UnclampedInductive Waveform

Fig. 4: Gate Chargetest Circuit

Fig. 5:

Test CircuitFor InductiveLoad Switching

And Diode Recovery Times

4/6

SO-8 MECHANICALDATA

STS11NF3LL

DIM.

MIN. TYP. MAX. MIN. TYP. MAX.

A 1.75 0.068
a1 0.1 0.25 0.003 0.009
a2 1.65 0.064
a3 0.65 0.85 0.025 0.033

b 0.35 0.48 0.013 0.018
b1 0.19 0.25 0.007 0.010

C 0.25 0.5 0.010 0.019
c1 45 (typ.)

D 4.8 5.0 0.188 0.196

E 5.8 6.2 0.228 0.244

e 1.27 0.050
e3 3.81 0.150

F 3.8 4.0 0.14 0.157

L 0.4 1.27 0.015 0.050

M 0.6 0.023

S 8 (max.)

mm inch

0016023

5/6

STS11NF3LL

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of use of such information nor for any infringement of patents or other rights of third parties which may result from its use. No license is
granted by implication or otherwise under any patent or patent rights of STMicroelectronics. Specification mentioned in this publication are
subject to change without notice. This publication supersedes and replaces all information previously supplied. STMicroelectronics products
are not authorized for use as critical components in life support devices or systems without express written approval of STMicroelectronics.

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