Datasheet STS10NF30L Datasheet (SGS Thomson Microelectronics)



N - CHANNEL 30V - 0.011Ω - 10A SO-8

TYPE V

ST S10NF30L 30 V < 0.0135 Ω 10 A

■ TYPICALR

■ STANDARD OUTLINE FOR EASY

DS(on)

DSS

= 0.011 Ω

AUTOMATEDSURFACEMOUNTASSEMBLY

■ LOW THRESHOLDDRIVE

DESCRIPTION

This Power MOSFET is the secondgeneration of
STMicroelectronics unique ” Single Feature
Size

”

strip-based process. The resulting
transistor shows extremely high packing density
for low on-resistance, rugged avalanche
characteristics and less critical alignment steps
therefore a remarkable manufacturing
reproducibility.

R

DS(on)

I

D

STS10NF30L

STripFET POWER MOSFET

PRELIMINARY DATA

SO-8

APPLICATIONS

■ DC MOTOR DRIVE

■ DC-DCCONVERTERS

■ BATTERYMANAGMENTIN NOMADIC

INTERNAL SCHEMATIC DIAGRAM

EQUIPMENT

■ POWERMANAGEMENTIN

PORTABLE/DESKTOPPC

s

ABSOLUTE MAXIMUM RATINGS

Symb o l Parameter Value Unit

V

V

V

I

DM

P

(•) Pulse width limited by safeoperating area

Drain-source Voltage (VGS=0) 30 V

DS

Drain- g at e Voltage (RGS=20kΩ)30V

DGR

Gate-s ource Voltage ± 20 V

GS

Drain Cur rent (co nt inuous) at T c = 25oC

I

D

Drain Cur rent (co nt inuous) at T

(•) Drain Curr ent (pulsed) 40 A

Tot al Dissi pat ion at Tc = 25oC 2.5 W

tot

=100oC

c

10

6.5

A
A

June 2000

1/6

STS10NF30L

THERMAL DATA

R

thj-amb

Tj

T

(*)

Mountedon FR-4board (t

(*)T hermal Resist ance Junction-ambient

Maximum Operating J unct ion Tem p er at ure

stg

St orage Tem pe ra tur e

≤ 10

sec)

50

150

-55 to 150

o

C/W

o
o

C
C

ELECTRICAL CHARACTERISTICS (T

=25oC unless otherwisespecified)

case

OFF

Symbol Parameter Test Conditions Min. Typ. Max. Unit

V

(BR)DSS

Drain-source

ID=250µAVGS=0 30 V

Break dow n Vo lt age

I

I

ON (∗

DSS

GSS

Zero Gate Voltage
Drain Curre nt (V

Gat e- bod y Leakag e
Current (V

)

DS

=0)

GS

=0)

V

=MaxRating

DS

=MaxRating Tc=125oC

V

DS

V

= ± 20 V ± 100 nA

GS

1

10

Symbol Parameter Test Conditions Min. Typ. Max. Unit

V

GS(th)

R

DS(on)

I

D(on)

Gate Threshold Voltage VDS=VGSID= 250 µA11.62.5V
Sta t ic Drain-s our c e On

Resistance

On State Drain Current VDS>I

VGS=10V ID=5A
V

=4.5V ID=5A

GS

D(on)xRDS(on )max

0.011

0.016

0.0135

0.0220

10 A

VGS=10V

DYNAMIC

Symbol Parameter Test Conditions Min. Typ. Max. Unit

g

(∗)Forward

fs

Tr ansc on duc tance

C

C

C

Input Capaci t ance

iss

Out put Capac itance

oss

Reverse Transfer

rss

Capacit a nc e

VDS>I

D(on)xRDS(on )maxID

=5A 20 S

VDS=25V f=1MHz VGS= 0 V 1450

390
150

µA
µ

Ω
Ω

pF
pF
pF

A

2/6

STS10NF30L

ELECTRICAL CHARACTERISTICS

(continued)

SWITCHINGON

Symbol Parameter Test Conditions Min. Typ. Max. Unit

t

d(on)

Tur n-on Delay T ime
Rise Time

t

r

VDD=15V ID=5A
R

=4.7

G

Ω

VGS=4.5V

25

280

(Resis t iv e Load, see fig. 3)

Q
Q
Q

Tot al Gate Charge

g

Gat e- Source Charge

gs

Gate-Drain Charge

gd

VDD=24V ID=10A VGS=10V 25

11
12

35 nC

SWITCHINGOFF

Symbol Parameter Test Conditions Min. Typ. Max. Unit

t

d(off)

Tur n-of f Dela y Tim e

t

Fall T ime

f

VDD=15V ID=5A

=4.7 Ω VGS=4.5V

R

G

40
60

(Resis t iv e Load, see fig. 3)

SOURCEDRAINDIODE

Symbol Parameter Test Conditions Min. Typ. Max. Unit

I

SD

I

SDM

V

SD

t

Q

I

RRM

(∗) Pulsed: Pulse duration = 300 µs, duty cycle 1.5 %
(•) Pulse width limited by safe operatingarea

Source-drain Current

(•)

Source-drain Current

10
40

(pulsed)

(∗)ForwardOnVoltage ISD=10A VGS=0 1.2 V

Reverse Recovery

rr

Time
Reverse Recovery

rr

ISD= 10 A di/dt = 100 A/µs

=15V Tj=150oC

V

DD

(see test circuit, fig. 5)

45

52
Charge
Reverse Recovery

2.3

Current

ns
ns

nC
nC

ns
ns

A
A

ns

nC

A

3/6

STS10NF30L

Fig. 1:

UnclampedInductiveLoad TestCircuit

Fig. 3: SwitchingTimes Test Circuits For
ResistiveLoad

Fig. 2:

UnclampedInductiveWaveform

Fig. 4: Gate Chargetest Circuit

Fig. 5:

Test CircuitFor InductiveLoad Switching

And Diode Recovery Times

4/6

SO-8 MECHANICALDATA

STS10NF30L

DIM.

MIN. TYP. MAX. MIN. TYP. MAX.

A 1.75 0.068
a1 0.1 0.25 0.003 0.009
a2 1.65 0.064
a3 0.65 0.85 0.025 0.033

b 0.35 0.48 0.013 0.018
b1 0.19 0.25 0.007 0.010

C 0.25 0.5 0.010 0.019
c1 45 (typ.)

D 4.8 5.0 0.188 0.196

E 5.8 6.2 0.228 0.244

e 1.27 0.050
e3 3.81 0.150

F 3.8 4.0 0.14 0.157

L 0.4 1.27 0.015 0.050

M 0.6 0.023

S 8 (max.)

mm inch

0016023

5/6

STS10NF30L

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granted by implicationor otherwise under any patent or patent rights of STMicroelectronics. Specification mentioned in thispublication are
subject to change without notice. This publication supersedes and replaces all information previously supplied. STMicroelectronics products
are not authorized for use as critical components in life support devices or systems without express written approval of STMicroelectronics.

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