Datasheet STRH40P10 Datasheet (ST)

Rad-Hard P-channel 100 V, 34 A Power MOSFET

Features

V

BDSS

100 V 34 A 0.060 Ohm 162 nC

■ Fast switching

■ 100% avalanche tested

■ Hermetic package

■ 100 krad TID

■ SEE radiation hardened

I

D

R

DS(on)

STRH40P10

Q

g

3

2

TO-254AA

1

Applications

■ Satellite

Figure 1. Internal schematic diagram

■ High reliability

D (1)

Description

This P-channel Power MOSFET is developed with
STMicroelectronics unique STripFET™ process.
It has specifically been designed to sustain high
TID and provide immunity to heavy ion effects.

Table 1. Device summary

Part number

ESCC part

number

STRH40P10HY1 -

STRH40P10HYG TBD ESCC flight Target

Quality

level

Engineering

model

Package

Lead

finish

TO-254AA Gold 10 -55 to 150°C

G (3)

SC06140p

S (2)

Mass (g) Temp. range EPPL

-

Note: Contact ST sales office for information about the specific conditions for product in die form

and for other packages.

November 2011 Doc ID 18354 Rev 6 1/18

www.st.com

18

Contents STRH40P10

Contents

1 Electrical ratings . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 3

2 Electrical characteristics . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 5

3 Radiation characteristics . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 7

4 Electrical characteristics (curves) . . . . . . . . . . . . . . . . . . . . . . . . . . 10

5 Test circuits . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 12

6 Package mechanical data . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 13

7 Order codes . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 16

8 Revision history . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 17

2/18 Doc ID 18354 Rev 6

STRH40P10 Electrical ratings

1 Electrical ratings

(TC= 25 °C unless otherwise specified).

Note: For the P-channel MOSFET actual polarity of voltages and current has to be reversed.

Table 2. Absolute maximum ratings (pre-irradiation)

Symbol Parameter Value Unit

(1)

V

DS

V

GS

I

D

I

D

I

DM

P

TOT

dv/dt

T

T

Drain-source voltage (VGS = 0)

(2)

Gate-source voltage ±20 V

(3)

Drain current (continuous) 34 A

(3)

Drain current (continuous) at TC= 100 °C 21 A

(4)

Drain current (pulsed) 136 A

(3)

Total dissipation 176 W

(5)

Peak diode recovery voltage slope 2.5 V/ns

Storage temperature

stg

Operating junction temperature °C

J

1. This rating is guaranteed @ TJ ≥ 25 °C (see Figure 10: Normalized BV

2. This value is guaranteed over the full range of temperature.

3. Rated according to the Rthj-case + Rthc-s.

4. Pulse width limited by safe operating area.

5. ISD ≤ 40 A, di/dt ≤ 100 A/µs, VDD = 80% V

(BR)DSS.

DSS

100 V

°C

- 55 to 150

vs temperature).

Table 3. Thermal data

Symbol Parameter Value Unit

R

thj-case

R

thc-s

Thermal resistance junction-case max 0.71 °C/W

Case-to-sink typ 0.21 °C/W

Table 4. Avalanche characteristics

Symbol Parameter Value Unit

I

E

AS

E

Avalanche current, repetitive or not-repetitive

AR

(pulse width limited by T

Single pulse avalanche energy

(1)

(starting T

=25 °C, ID= 17 A, VDD=50 V)

J

max)

J

Single pulse avalanche energy

AS

(starting T

=110 °C, ID= 17 A, VDD=50 V)

J

Doc ID 18354 Rev 6 3/18

TBD A

1133 mJ

332 mJ

Electrical ratings STRH40P10

Table 4. Avalanche characteristics (continued)

Symbol Parameter Value Unit

Repetitive avalanche

= 50 V, IAR = 24 A, f = 100 KHz, TJ = 25 °C,

(V

dd

duty cycle = 10%)

E

AR

Repetitive avalanche

= 50 V, IAR = 17 A, f = 100 KHz, TJ = 110

(V

dd

°C, duty cycle = 10%)

1. Maximum rating value.

25

mJ

8

4/18 Doc ID 18354 Rev 6

STRH40P10 Electrical characteristics

2 Electrical characteristics

(TC = 25 °C unless otherwise specified).

Note: For the P-channel MOSFET actual polarity of voltages and current has to be reversed.

Pre-irradiation

Table 5. Pre-irradiation on/off states

Symbol Parameter Test conditions Min. Typ. Max. Unit

I

DSS

I

GSS

BV

DSS

V

GS(th)

R

DS(on)

1. This rating is guaranteed @ TJ ≥ 25 °C (see Figure 10: Normalized BV

Table 6. Pre-irradiation dynamic

Zero gate voltage drain
current (V

GS

= 0)

Gate body leakage current

= 0)

(V

DS

Drain-to-source breakdown

(1)

voltage

80% BV

V
V

V

Dss

= 20 V

GS

= -20 V -100

GS

= 0, ID = 1 mA 100 V

GS

100 nA

Gate threshold voltage VDS = VGS, ID = 1 mA 2 4.5 V

Static drain-source on
resistance

= 12 V; ID = 17 A 0.060 0.075 Ω

V

GS

vs temperature).

DSS

10 µA

Symbol Parameter Test conditions Min. Typ. Max. Unit

C

C

oss

C

Q

Q

Q

Input capacitance

iss

Output capacitance

(1)

Reverse transfer

rss

capacitance

Total gate charge

g

Gate-to-source charge

gs

Gate-to-drain (“Miller”)

gd

charge

= 0, VDS = 25 V,

V

GS

f=1 MHz

= 50 V, ID = 34 A,

V

DD

=12 V

V

GS

3710

510
204

130

14
32

4640

635
255

162

18
40

5570

760
306

194

22
48

nA

pF
pF
pF

nC
nC
nC

(1)

R

Gate input resistance

G

test signal level=20mV

1.5 Ω

open drain

f=1MHz gate DC bias=0

1. Not tested, guaranteed by process.

Table 7. Pre-irradiation switching times

Symbol Parameter T e st cond itions Min. Typ. Max Unit

t

d(on)

t

d(off)

Turn-on delay time

t

Rise time

r

Turn-off-delay time

t

Fall time

f

= 50 V, ID = 17 A,

V

DD

R

= 4.7 Ω, VGS = 12 V

G

15
19
68
34

24
31

129

46

33
43

190

58

ns
ns
ns
ns

Doc ID 18354 Rev 6 5/18

Electrical characteristics STRH40P10

Table 8. Pre-irradiation source drain diode

(1)

Symbol Parameter Test conditions Min. Typ. Max Unit

I

I

SDM

V

SD

t

rr

Q

I

RRM

t

rr

Q

I

RRM

1. Refer to the Figure 16.

2. Pulse width limited by safe operating area.

3. Pulsed: pulse duration = 300 µs, duty cycle 1.5%.

4. Not tested in production, guaranteed by process.

Source-drain current

SD

Source-drain current

(2)

(pulsed)

(3)

Forward on voltage I

(4)

Reverse recovery time

(4)

Reverse recovery charge

rr

(4)

Reverse recovery current

(4)

Reverse recovery time

(4)

Reverse recovery charge

rr

(4)

Reverse recovery current

34

136

= 30 A, VGS = 0 1.1 V

SD

= 34 A,

I

SD

di/dt = 40 A/µs

= 12 V, TJ = 25 °C

V

DD

= 34 A,

I

SD

di/dt = 40 A/µs

= 12 V, TJ = 150 °C

V

DD

276 345

316

473

133

414 ns

4.1

7.1

A
A

µC

A

ns

µC

A

6/18 Doc ID 18354 Rev 6

STRH40P10 Radiation characteristics

3 Radiation characteristics

The technology of the STMicroelectronics rad-hard Power MOSFETs is extremely resistant
to radiative environments. Every manufacturing lot is tested for total ionizing dose
(irradiation done according to the ESCC 22900 specification, window 1) using the TO-3
package. Both pre-irradiation and post-irradiation performances are tested and specified
using the same circuitry and test conditions in order to provide a direct comparison.

(T

= 22 ± 3 °C unless otherwise specified).

amb

Total dose radiation (TID) testing

One bias conditions using the TO-3 package:

–V

The following parameters are measured (see Table 9, Table 10 and Table 11):

● before irradiation

● after irradiation

● after 24 hrs @ room temperature

● after 168 hrs @ 100 °C anneal

bias: + 20 V applied and VDS= -100 V during irradiation

GS

Table 9. Post-irradiation on/off states @ T

= 25 °C, (Co60 γ rays 100 K Rad(Si))

J

Symbol Parameter Test conditions Drift values ∆ Unit

I

DSS

I

GSS

BV

DSS

V

GS(th)

R

DS(on)

Table 10. Dynamic post-irradiation @ TJ= 25 °C, (Co60 γ rays 100 K Rad(Si))

Zero gate voltage drain current
(VGS = 0)

Gate body leakage current
(VDS = 0)

Drain-to-source breakdown
voltage

80% BV

V
V

V

Dss

= 12 V

GS

= -12 V

GS

= 0, ID = 1 mA +5% V

GS

+1 µA

1.5

-1.5

µA

Gate threshold voltage VDS = VGS, ID = 1 mA +150% V

Static drain-source on resistance VGS = 10 V; ID = 20 A -4% / +35% Ω

(1)

Symbol Parameter Test conditions Drift values ∆ Unit

Q

Q

gs

Q

gd

1. Parameter not measured after irradiation but guaranteed by the results obtained during the evaluation
phase that proves this parameter is directly correlated to the V

Total gate charge

g

= 1 mA, VGS = 12 V,

I

Gate-source charge -5% / +200%

G

VDS = 50 V, IDS = 20 A

Gate-drain charge -10% / +100%

shift.

GS(th)

-15% / +5%

nC

Doc ID 18354 Rev 6 7/18

Radiation characteristics STRH40P10

Table 11. Source drain diode post-irradiation @ T

Rad(Si))

(1)

= 25 °C, (Co60 γ rays 100 K

J

Symbol Parameter Test conditions Drift values ∆.Unit

(2)

V

SD

Forward on voltage I

= 40 A, VGS = 0 ± 5% V

SD

1. Refer to Figure 16.

2. Pulsed: pulse duration = 300 µs, duty cycle 1.5%

Single event effect, SOA

The technology of the STMicroelectronics rad-hard Power MOSFETs is extremely resistant
to heavy ion environment for single event effect (irradiation per MIL-STD-750E, method
1080 bias circuit in Figure 3: Single event effect, bias circuit). SEB and SEGR tests have
been performed with a fluence of 3e+5 ions/cm².

The accept/reject criteria are:

● SEB test: drain voltage checked, trigger level is set to V

soon as a SEB occurs or if the fluence reaches 3e+5 ions/cm².

● SEGR test: the gate current is monitored every 200 ms. A gate stress is performed

before and after irradiation. Stop condition: as soon as the gate current reaches 100 nA
(during irradiation or during PIGS test) or if the fluence reaches 3e+5 ions/cm².

The results are:

– no SEB

– SEGR test produces the following SOA (see Table 12: Single event effect (SEE),

safe operating area (SOA) and Figure 2: Single event effect, SOA)

= - 5 V. Stop condition: as

ds

Table 12. Single event effect (SEE), safe operating area (SOA)

Energy

Ion

Let (Mev/(mg/cm

2

)

(MeV)

768 94 - -60 - - -

Kr 32

756 92 - - - - -20

Range

(µm)

@V

=0 @VGS= 2 V @VGS= 5 V @VGS= 10 V @VGS= 15 V

GS

V

(V)

DS

8/18 Doc ID 18354 Rev 6

STRH40P10 Radiation characteristics

Figure 2. Single event effect, SOA







.U0H9FPðPJ













9GV9GVPD[







   

9JV9

(a)

Figure 3. Single event effect, bias circuit

a. Bias condition during radiation refer to Table 12: Single event effect (SEE), safe operating area (SOA) .

Doc ID 18354 Rev 6 9/18

Electrical characteristics (curves) STRH40P10

4 Electrical characteristics (curves)

Figure 4. Safe operating area Figure 5. Thermal impedance

I

D

(A)

Tj=150°C
Tc=25°C

100

Operation in this area is

Limited by max R

DS(on)

Sinlge
pulse

100µs

HV32530v1

10

1ms

10ms

1

DC operation

0.1

0.1

Figure 6. Output characteristics Figure 7. Transfer characteristics

I

D

1

10

100

(A)

140

V

GS

= 12 V

DS

(V)

V

HV32500v1

I

(A)

D

V

ds

= 3 V

100

120

100

80

60

40

20

5 V

4 V

0

0

5

10

15

V

DS

(V)

80

60

40

20

0

0

T

J

= 150 °C

J

= 25 °C

T

T

J

= -55 °C

2

4

8

6

10

GS

V

HV32505v1

(V)

Figure 8. Gate charge vs gate-source voltage Figure 9. Capacitance variations

-V

GS

(V)

10

VDD=50 V

8

HV32510v1

C

(pF)

6100

5100

4100

6

3100

4

2

0

20

0

60

100

ID= -34 A
I

D

= -17 A

D

= -8.5 A

I

140

Q

g

(nC)

2100

1100

100

Crss

0

20

40

10/18 Doc ID 18354 Rev 6

60

80

Ciss

Coss

V

DS

HV32520v1

(V)

STRH40P10 Electrical characteristics (curves)

Figure 10. Normalized BV

vs temperature Figure 11. Static drain-source on resistance

DSS

Figure 12. Normalized gate threshold voltage

vs temperature

Figure 13. Normalized on resistance vs

temperature

Figure 14. Source drain-diode forward

characteristics

Doc ID 18354 Rev 6 11/18

Test circuits STRH40P10

5 Test circuits

Figure 15. Switching times test circuit for resistive load

1. Max driver V

Figure 16. Source drain diode

slope = 1V/ns (no DUT)

GS

(1)

12/18 Doc ID 18354 Rev 6

STRH40P10 Test circuits

Figure 17. Unclamped inductive load test circuit (single pulse and repetitive)

Doc ID 18354 Rev 6 13/18

Package mechanical data STRH40P10

6 Package mechanical data

In order to meet environmental requirements, ST offers these devices in different grades of
ECOPACK

®

packages, depending on their level of environmental compliance. ECOPACK®
specifications, grade definitions and product status are available at: www.st.com. ECOPACK
is an ST trademark.

Table 13. TO-254AA mechanical data

mm Inch

Dim.

Min. Typ. Max. Min. Typ. Max.

A 13.59 13.84 0.535 0.545

B 13.59 13.84 0.535 0.545

C 20.07 20.32 0.790 0.800

D 6.32 6.60 0.249 0.260

E 1.02 1.27 0.040 0.050

F 3.56 3.81 0.140 0.150

G 16.89 17.40 0.665 0.685

H 6.86 0.270

I 0.89 1.02 1.14 0.035 0.040 0.045

J 3.81 0.150

K 3.81 0.150

L 12.95 14.50 0.510 0.571

M 2.92 3.18

N0.71

R1 1.00 0.039

R2 1.52 1.65 1.78 0.060 0.065 0.070

14/18 Doc ID 18354 Rev 6

STRH40P10 Package mechanical data

Figure 18. TO-254AA drawing

Doc ID 18354 Rev 6 15/18

Order codes STRH40P10

7 Order codes

Table 14. Ordering information

Order code

ESCC part

number

STRH40P10HY1 -

Quality

level

Engineering

model

EPPL Package

­TO-254AA Gold TBD

Lead

finish

Marking Packing

Strip
pack

STRH40P10HYG TBD ESCC flight Target

Contact ST sales office for information about the specific conditions for products in die form and for other
packages.

16/18 Doc ID 18354 Rev 6

STRH40P10 Revision history

8 Revision history

Table 15. Document revision history

Date Revision Changes

23-Dec-2010 1 First release.

02-Feb-2011 2 Updated Figure 1.

03-May-2011 3 Updated Figure 1.

22-Jun-2011 4 Updated features on coverpage.

Updated order codes in Table 1: Device summary and Table 14:

25-Jul-2011 5

09-Nov-2011 6

Ordering information.

Minor text changes.

Updated dynamic values on Table 6: Pre-irradiation dynamic,

Table 7: Pre-irradiation switching times and Table 8: Pre-irradiation
source drain diode.

Doc ID 18354 Rev 6 17/18

STRH40P10

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18/18 Doc ID 18354 Rev 6