This datasheet provides the STR73x ordering information, mechanical and electrical device
characteristics.
For complete information on the STR73xF microcontroller memory, registers and
peripherals. please refer to the STR73x reference manual.
For information on programming, erasing and protection of the internal Flash memory
please refer to the STR7 Flash programming reference manual.
For information on the ARM7TDMI core please refer to the ARM7TDMI technical reference
manual.
1.1 Description
ARM core with embedded Flash & RAM
STR73xF family combines the high performance ARM7TDMI
of peripheral functions and enhanced I/O capabilities. All devices have on-chip high-speed
single voltage Flash memory and high-speed RAM. The STR73xF family has an embedded
ARM core and is therefore compatible with all ARM tools and software.
™
CPU with an extensive range
Extensive tools support
STMicroelectronics’ 32-bit, ARM core-based microcontrollers are supported by a complete
range of high-end and low-cost development tools to meet the needs of application
developers. This extensive line of hardware/software tools includes starter kits and complete
development packages all tailored for ST’s ARM core-based MCUs.
The range of development packages includes third-party solutions that come complete with
a graphical development environment and an in-circuit emulator/programmer featuring a
JTAG application interface. These support a range of embedded operating systems (OS),
while several royalty-free OSs are also available.
For more information, please refer to ST MCU site http://www.st.com/mcu
Figure 1 shows the general block diagram of the device family.
Package choice: reduced pin-count TQFP100 or feature-rich 144-pin TQFP or LFBGA
The STR73xF family is available in 3 packages. The TQFP144 and LFBGA144 versions
have the full set of all features. The 100-pin version has fewer timers, I/Os and ADC
channels. Refer to the Device Summary on Page 1 for a comparison of the I/Os available on
each package.
The family includes versions with and without CAN.
High speed Flash memory
The Flash program memory is organized in 32-bit wide memory cells which can be used for
storing both code and data constants. It is accessed by CPU with zero wait states @ 36
MHz.
The STR7 embedded Flash memory can be programmed using in-circuit programming or
in-application programming.
The Flash memory endurance is 10K write/erase cycles and the data retention is 20 years
@ 85° C.
IAP (in-application programming): IAP is the ability to re-program the Flash memory of a
microcontroller while the user program is running.
ICP (in-circuit programming): ICP is the ability to program the Flash memory of a
microcontroller using JTAG protocol while the device is mounted on the user application
board.
The Flash memory can be protected against different types of unwanted access
(read/write/erase). There are two types of protection:
●Sector write protection
●Flash debug protection (locks JTAG access)
Flexible power management
To minimize power consumption, you can program the STR73xF to switch to SLOW, WFI
LPWFI, STOP or HALT modes depending on the current system activity in the application.
5/52
Page 6
OverviewSTR73xFxx
Flexible clock control
Two clock sources are used to drive the microcontroller, a main clock driven by an external
crystal or ceramic resonator and an internal backup RC oscillator that operates at 2 MHz or
32 kHz. The embedded PLL can be configured to generate an internal system clock of up to
36 MHz. The PLL output frequency can be programmed using a wide selection of multipliers
and dividers.
Voltage regulators
The STR73xF requires an external 4.5 to 5.5 V power supply. There are two internal Voltage
Regulators for generating the 1.8 V power supply needed by the core and peripherals. The
main VR is switched off and the Low Power VR switched on when the application puts the
STR73xF in Low Power Wait for Interrupt (LPWFI) mode.
Low voltage detectors
The voltage regulator and Flash modules each have an embedded LVD that monitors the
internal 1.8 V supply. If the voltage drops below a certain threshold, the LVD will reset the
STR73xF.
Note:An external power-on reset must be provided ensure the microcontroller starts-up correctly.
2.1 On-chip peripherals
CAN interfaces
The three CAN modules are compliant with the CAN specification V2.0 part B (active). The
bit rate can be programmed up to 1 MBaud. These are not available in the STR735 and
STR736.
DMA
4 DMA controllers, each with 4 data streams manage memory to memory, peripheral to
peripheral, peripheral to memory and memory to peripheral transfers. The DMA requests
are connected to TIM timers, BSPI0, BSPI1, BSPI2 and ADC. One of the streams can be
configured to be triggered by a software request, independently from any peripheral activity.
16-bit timers (TIM)
Each of the ten timers (six in 100-pin devices) have a 16-bit free-running counter with 7-bit
prescaler, up to two input capture/output compare functions, a pulse counter function, and a
PWM channel with selectable frequency. This provides a total of 16 independent PWMs (12
in 100-pin devices) when added with the PWM modules (see next paragraph).
PWM modules (PWM)
The six 16-bit PWM modules have independently programmable periods and duty-cycles,
with 5+3 bit prescaler factor.
Timebase timers (TB)
The three 16-bit timebase timers with 8-bit prescaler for general purpose time triggering
operations.
Real-time clock (RTC)
The RTC provides a set of continuously running counters driven by separate clock signal
derived from the main oscillator. The RTC can be used as a general timebase or
6/52
Page 7
STR73xFxxOverview
clock/calendar/alarm function. When the STR73xF is in LPWFI mode the RTC keeps
running, powered by the low power voltage regulator.
UARTs
The 4 UARTs allow full duplex, asynchronous, communications with external devices with
independently programmable TX and RX baud rates up to 625 Kbaud.
Buffered serial peripheral interfaces (BSPI)
Each of the three BSPIs allow full duplex, synchronous communications with external
devices, master or slave communication at up to 6 Mb/s in master mode and up to 4.5 Mb/s
in slave mode (@36 MHz system clock).
2
I
C interfaces
The two I
2
I
C mode (400 kHz) and 7 or 10-bit addressing modes.
2
C Interfaces provide multi-master and slave functions, support normal and fast
A/D converter
The 10-bit analog to digital converter, converts up to 16 channels in single-shot or
continuous conversion modes (12 channels in 100-pin devices). The minimum conversion
time is 3 µs.
Watchdog
The 16-bit watchdog timer protects the application against hardware or software failures and
ensures recovery by generating a reset.
I/O ports
Up to 112 I/O ports (72 in 100-pin devices) are programmable as general purpose
input/output or alternate function.
External interrupts and wake-up lines
16 external interrupts lines are available for application use. In addition, up to 32 external
Wake-up lines (18 in 100-pin devices) can be used as general purpose interrupts or to
wake-up the application from STOP mode.
7/52
Page 8
Block diagramSTR73xFxx
APB BUS
122 ports
GPIO PORTS 0-6
WATCHDOG
I2C0-1
WAKE-UP/INT (WIU)
UART0, 1, 2, 3
WAKE-UP TIMER
APB BUS
BSPI 0-2
RTC
CAN 0-2*
INTERRUPT CTL (EIC)
A/D CONVERTER (ADC)
32 AF
8 AF
16 AF
12 AF
XTAL1
XTAL2
OSC
TIMER (TIM) 2-4
4 AF
AF: alternate function on I/O port pin
PWM 0-5
CLOCK MGT (CMU)
TIMER (TIM) 0-1
8 AF
TIMER (TIM) 5-9
20 AF
6 AF
(WUT)
TIMEBASE TIMER
(TB) 0-2
6 AF
12 AF
*CAN peripherals not available on STR735F.
FLASH
PROGRAM MEMORY
64/128/256K
APB
BRIDGE 0
APB
BRIDGE 1
POWER SUPPLY
PRCCU/PLL
RAM
16K
JTAG
ARM7TDMI
CPU
JTDI
JTCK
JTMS
JTRST
JTDO
RSTIN
V18
VDD
VSS
VREG
VDDA
VSSA
ARM7 NATIVE BUS
DMA0-3
AHB BUS
AHB
BRIDGE
M0
M1
TEST
3 Block diagram
Figure 1.STR730F/STR735F block diagram
8/52
Page 9
STR73xFxxBlock diagram
APB BUS
72 ports
GPIO PORTS 0-6
FLASH
PROGRAM MEMORY
64/128/256K
WATCHDOG
I2C0-1
WAKE-UP/INT (WIU)
UART0, 1, 2, 3
WAKE-UP TIMER
APB
BRIDGE 0
APB
BRIDGE 1
APB BUS
BSPI 0-2
RTC
CAN 0-2*
INTERRUPT CTL (EIC)
A/D CONVERTER (ADC)
POWER SUPPLY
PRCCU/PLL
RAM
16K
JTAG
ARM7TDMI
CPU
18 AF
8 AF
12 AF
12 AF
XTAL1
XTAL2
JTDI
JTCK
JTMS
JTRST
JTDO
RSTIN
V18
VDD
VSS
OSC
VREG
VDDA
VSSA
TIMER (TIM) 2-4
ARM7 NATIVE BUS
4 AF
AF: alternate function on I/O port pin
PWM 0-5
CLOCK MGT (CMU)
DMA0-3
TIMER (TIM) 0-1
8 AF
TIMER (TIM) 5
4 AF
6 AF
(WUT)
TIMEBASE TIMER
(TB) 0-2
AHB BUS
AHB
BRIDGE
6 AF
M0
M1
TEST
12 AF
*CAN peripherals not available on STR736F.
Figure 2.STR731F/STR736 block diagram
9/52
Page 10
Block diagramSTR73xFxx
3.1 Related documentation
Available from www.arm.com:
ARM7TDMI technical reference manual
Available from http://www.st.com:
STR73x reference manual (RM0001)
STR7 Flash programming reference manual
STR73x software library user manual
For a list of related application notes refer to http://www.st.com.
Type: I = input, O = output, S = supply, HiZ= high impedance,
In/Output level:T
= TTL 0.8 V / 2 V with input trigger
T
C
= CMOS 0.3VDD/0.7VDD with input trigger
T
Port and control configuration:
Input:pu/pd = with internal 100 kΩ weak pull-up or pull down
Output: OD = open drain
PP = push-pull
Interrupts:
INTx = external interrupt line
WUPx = wake-up interrupt line
The reset state (during and just after the reset) of the I/O ports is input floating (Input tristate
TTL mode). To avoid excess power consumption, unused I/O ports must be tied to ground.
LFBGA144
Pin name
TQFP100
SS
DD
P0.11/OCMPB
7
Type
T
T
T
T
SGround
SSupply voltage (5 V)
T
T
T
T
T
T
T
I/OT
T
Table 4.STR73xF pin description
Pin n°
TQFP144
1A11P0.0/OCMPB2I/OT
2B22P0.1/OCMPA2I/OT
3C23P0.2/ICAPA2 I/OT
4C34P0.3/ICAPB2I/OT
5D1 V
6D2 V
7B15P0.4/OCMPA5I/OT
8C16P0.5/OCMPB5I/OT
9D37P0.6/ICAPA5 I/OT
10D4P0.7/ICAPB5I/OT
11E1P0.8/OCMPA6I/OT
12E2P0.9/OCMPB6I/OT
13E3P0.10/OCMPA7 I/OT
14E4
(logic level)
InputOutput
pu/pd
Input Level
interrupt
2mA X X Port 0.0TIM2: output compare B output
2mA X X Port 0.1TIM2: output compare A output
2mA X X Port 0.2TIM2: input capture A input
2mA X X Port 0.3TIM2: input capture B input
2mA X X Port 0.4TIM5: output compare A output
2mA X X Port 0.5TIM5: output compare B output
2mA X X Port 0.6TIM5: input capture A input
2mA X X Port 0.7TIM5: input capture B input
2mA X X Port 0.8TIM6: output compare A output
2mA X X Port 0.9TIM6: output compare B output
2mA X X Port 0.10 TIM7: output compare A output
2mA X X Port 0.11 TIM7: output compare B output
Main
OD
function
(after
PP
reset)
Alternate function
Capability
15F18V
16G19V
DD
SS
17E510 P0.12/ICAPA3I/OT
18F211 P0.13/ICAPB3I/OT
SSupply voltage (5 V)
SGround
T
T
14/52
2mA X X Port 0.12 TIM3: input capture A input
2mA X X Port 0.13 TIM3: input capture B input
Page 15
STR73xFxxBlock diagram
Table 4.STR73xF pin description
Pin n°
TQFP144
LFBGA144
19F312
Pin name
TQFP100
P0.14/OCMPB
3
Typ e
I/OT
20F413 P0.15/OCMPA3 I/O T
21F514 P1.0/OCMPA4I/OT
22F615 P1.1/OCMPB4I/OT
23G216 P1.2/ICAPB4I/O T
24G317 P1.3/ICAPA4I/OT
25G4V
26H1V
SS
DD
SGround
SSupply voltage (5 V)
27J1P1.4I/OT
28G5P1.5I/OT
29K118 P1.6/OCMPB1I/OT
30L119 P1.7/OCMPA1I/OT
31H220 P1.8/OCMPA0I/OT
32H321 P1.9/OCMPB0I/OT
33H422 P1.10/ICAPB0I/OT
34J223 P1.11/ICAPA0I/OT
35J324 P1.12/ICAPA1I/OT
36K225 P1.13/ICAPB1I/OT
37M126 P1.14/CAN0RX I/OT
38L227 P1.15/CAN0TX I/O T
39L328 P2.0/PWM0I/OT
40K329 P2.1/CAN1RXI/OT
41M430 P2.2/CAN1TXI/OT
42L431 P2.3/PWM1I/OT
43M232 P2.4/PWM2I/OT
44M3P2.5/PWM3I/OT
45K4P2.6/PWM4I/OT
46J4P2.7/PWM5I/OT
47M533 M0IT
48L534 RSTINIC
49K535 M1IT
InputOutput
Main
function
(after
PP
OD
pu/pd
Input Level
T
T
T
T
T
T
T
T
T
T
T
T
T
T
T
T
T
T
T
T
T
T
T
T
T
T
pdBOOT: mode selection 0 input
T
puReset input
T
pdBOOT: mode selection 1 input
T
interrupt
INT02mA X X Port 1.8TIM0: output compare A output
INT12mA X X Port 1.9TIM0: output compare B output
WUP28 2mA X X Port 1.10 TIM0: input capture B input
WUP29 2mA X X Port 1.11 TIM0: input capture A input
WUP30 2mA X X Port 1.12 TIM1: input capture A input
WUP31 2mA X X Port 1.13 TIM1: input capture B input
WUP12 2mA X X Port 1.14 CAN0: receive data input
WUP13 2mA X X Port 2.1CAN1: receive data input
Capability
2mA X X Port 0.14 TIM3: output compare B output
2mA X X Port 0.15 TIM3: output compare A output
2mA X X Port 1.0TIM4: output compare A output
2mA X X Port 1.1TIM4: output compare B output
2mA X X Port 1.2TIM4: input capture B input
2mA X X Port 1.3TIM4: input capture A input
2mA X X Port 1.4
2mA X X Port 1.5
2mA X X Port 1.6TIM1: output compare B output
2mA X X Port 1.7TIM1: output compare A output
2mA X X Port 1.15 CAN0: transmit data output
2mA X X Port 2.0PWM0: PWM output
2mA X X Port 2.2CAN1: transmit data output
2mA X X Port 2.3PWM1: PWM output
2mA X X Port 2.4PWM2: PWM output
2mA X X Port 2.5PWM3: PWM output
2mA X X Port 2.6PWM4: PWM output
2mA X X Port 2.7PWM5: PWM output
reset)
Alternate function
15/52
Page 16
Block diagramSTR73xFxx
Table 4.STR73xF pin description
Pin n°
InputOutput
Main
OD
function
(after
PP
reset)
Alternate function
Oscillator amplifier circuit input and
internal clock generator input.
Pin name
TQFP144
50J536 V
51M637 V
LFBGA144
TQFP100
DD
SS
52M738 XTAL1I
Typ e
pu/pd
Input Level
interrupt
Capability
SSupply voltage (5 V)
SGround
53H539 XTAL2OOscillator amplifier circuit output.
54L640 V
55K641
SS
P2.8/TDO1/CA
N2RX
SGround
I/OT
T
2mA X X Port 2.8
UART1:
transmit data
output
CAN2: receive
data input
(TQFP100
only)
CAN2:
56J642
P2.9/RDI1/CAN
2TX
I/OT
UART1:
T
WUP14 2mA X X Port 2.9
receive data
input
transmit data
output
(TQFP100
only)
57H6P2.10I/OT
58G6P2.11I/OT
59L7P2.12I/OT
60K7P2.13I/OT
61J743 P2.14/SCL0I/OT
62H744 P2.15/SDA0I/OT
T
T
T
T
T
T
WUP16 2mA X X Port 2.10
WUP17 2mA X X Port 2.11
INT14 2mA X X Port 2.12
INT15 2mA X X Port 2.13
WUP15 2mA X X Port 2.14 I2C0: serial clock
2mA X X Port 2.15 I2C0: serial data
63M845 TestIpdReserved pin. Must be tied to ground
64L846 V
65 M10 47 V
66 M11 48 V
BIAS
SS
DD
67K8P3.0/AIN0I/OT
68J8P3.1/AIN1I/OT
69M9P3.2/AIN2I/OT
70L9P3.3/AIN3I/OT
71K949 P3.4/AIN4I/OT
72L1050 P3.5/AIN5I/OT
S
SGround
SSupply voltage (5 V)
T
T
T
T
T
T
16/52
Internal RC oscillator bias. A 1.3 MΩ
external resistor has to be connected to
this pin when a 32 kHZ RC oscillator
frequency is used.
2mA X X Port 3.0ADC: analog input 0
2mA X X Port 3.1ADC: analog input 1
2mA X X Port 3.2ADC: analog input 2
2mA X X Port 3.3ADC: analog input 3
2mA X X Port 3.4
2mA X X Port 3.5
ADC: analog input 4
(AIN0 in TQFP100)
ADC: Analog input 5
(AIN1 in TQFP100)
Page 17
STR73xFxxBlock diagram
Table 4.STR73xF pin description
Pin n°
Pin name
TQFP144
LFBGA144
TQFP100
Typ e
73 M12 51 P3.6/AIN6I/OT
74L1152 P3.7/AIN7I/OT
75 K1153 V
76 K1054 V
SSA
DDA
SReference ground for A/D converter
SReference voltage for A/D converter
77J1255 P3.8/AIN8I/OT
78J1156 P3.9/AIN9I/OT
79L1257 P3.10/AIN10I/OT
80 K1258 P3.11/AIN11I/OT
81J1059 P3.12/AIN12I/O T
82J960 P3.13/AIN13I/OT
83 H12 61 P3.14/AIN14I/OT
InputOutput
pu/pd
Input Level
T
T
T
T
T
T
T
T
T
interrupt
INT22mA X X Port 3.12
INT32mA X X Port 3.13
INT42mA X X Port 3.14
Main
function
(after
PP
OD
reset)
Capability
2mA X X Port 3.6
2mA X X Port 3.7
2mA X X Port 3.8
2mA X X Port 3.9
2mA X X Port 3.10
2mA X X Port 3.11
Alternate function
ADC: analog input 6
(AIN2 in TQFP100)
ADC: analog input 7
(AIN3 in TQFP100)
ADC: analog input 8
(AIN4 in TQFP100)
ADC: analog input 9
(AIN5 in TQFP100)
ADC: analog input 10
(AIN6 in TQFP100)
ADC: analog input 11
(AIN7 in TQFP100)
ADC: analog input 12
(AIN8 in TQFP100)
ADC: analog input 13
(AIN9 in TQFP100)
ADC: analog input 14
(AIN10 in TQFP100)
84 H11 62 P3.15/AIN15I/OT
85 H10 63 V
86H964 V
DD
SS
SSupply voltage (5 V)
SGround
87 G12 65 JTRSTIT
88 F12 66 JTDIIT
89H867 JTMSIT
90 G11 68 JTCKIT
T
T
T
T
T
INT52mA X X Port 3.15
puJTAG reset Input
puJTAG data input
puJTAG mode selection Input
pdJTAG clock Input
91 G10 69 JTDOO4mA
92G970 V
93G871 V
SS
DD
94G7P4.0/ICAPA7I/OT
95 F11P4.1/ICAPB7I/OT
96 F10P4.2/ICAPA8I/OT
SGround
SSupply voltage (5 V)
T
T
T
WUP24 2mA X X Port 4.0TIM7: input capture A input
WUP25 2mA X X Port 4.1TIM7: input capture B input
WUP26 2mA X X Port 4.2TIM8: input capture A input
17/52
ADC: analog input 15
(AIN11 in TQFP100)
JTAG data output.
Note: Reset state = HiZ
Page 18
Block diagramSTR73xFxx
Table 4.STR73xF pin description
Pin n°
Pin name
TQFP144
LFBGA144
TQFP100
Typ e
97F9P4.3/ICAPB8I/OT
98F8P4.4/CAN2TXI/OT
99 E12P4.5/CAN2RXI/OT
100 E1172 P4.6/SCL1I/OT
101 C12 73 P4.7/SDA1I/OT
102 B12P4.8/OCMPA8I/OT
103 E10P4.9/ICAPB6I/OT
104 E974
105 D12
P4.10/ICAPA6/I
CAPB5
P4.11/OCMPB
8
I/OT
I/OT
106 D11P4.12/ICAPA9I/OT
107 D10P4.13/ICAPB9I/OT
108 C11 75 P4.14/SS
1I/OT
109 B1176 P4.15/SCK1I/OT
110 B1077 P5.0/MOSI1I/OT
InputOutput
pu/pd
Input Level
T
T
T
T
T
T
T
T
T
T
T
T
T
T
interrupt
WUP27 2mA X X Port 4.3TIM8: input capture B input
WUP18 2mA X X Port 4.5CAN2: receive data input
WUP19 2mA X X Port 4.6I2C1: serial clock
WUP20 2mA X X Port 4.10
WUP21 2mA X X Port 4.12 TIM9: input capture A input
WUP22 2mA X X Port 4.15 BSPI1: serial clock
Main
OD
function
(after
PP
reset)
Alternate function
Capability
2mA X X Port 4.4CAN2: transmit data output
2mA X X Port 4.7I2C1: serial data
2mA X X Port 4.8TIM8: output compare A output
2mA X X Port 4.9TIM6: input capture B input
TIM6: input
capture A input
(144-pin pkg
only)
TIM5: input
capture B
input
(TQFP100
only)
2mA X X Port 4.11 TIM8: output compare B output
2mA X X Port 4.13 TIM9: input capture B input
2mA X X Port 4.14 BSPI1: slave select
2mA X X Port 5.0
BSPI1: master output/slave
input
111 C10 78 P5.1/MISO1I/OT
112 A9P5.2/OCMPA9I/OT
113 B9P5.3/OCMPB9I/OT
114 C979
P5.4/SS
3
2/PWM
115 D980 P5.5/SCK2I/OT
116 A1181 P5.6/MOSI2I/OT
117 A1082 P5.7/MISO2I/OT
118 A883 P5.8/PWM4I/OT
I/OT
T
T
T
T
T
T
T
T
WUP23 2mA X X Port 5.5BSPI2: serial clock
INT62mA X X Port 5.8
18/52
2mA X X Port 5.1
BSPI1: master input/Slave
output
2mA X X Port 5.2TIM9: output compare A output
2mA X X Port 5.3TIM9: output compare B output
PWM3: PWM
2mA X X Port 5.4
BSPI2: slave
select
output
(TQFP100
only)
2mA X X Port 5.6
2mA X X Port 5.7
BSPI2: master output/slave
input
BSPI2: master input/slave
output
PWM4: PWM output (TQFP100
only)
Page 19
STR73xFxxBlock diagram
Table 4.STR73xF pin description
Pin n°
Pin name
TQFP144
LFBGA144
TQFP100
Typ e
119 B884 P5.9/PWM5I/OT
120 C885 P5.10/RDI2I/OT
121 A1286 P5.11/TDO2I/OT
122 D887 P5.12I/OT
123 E8P5.13I/OT
124 B7P5.14I/OT
125 A7P5.15I/OT
126 A688 V
127 C789 V
128 D790 V
18
SS
DD
S
SGround
SSupply voltage (5 V)
129 E791 P6.0I/OT
130 F7P6.1I/OT
131 B692 P6.2/RDI3I/OT
132 C6P6.3I/OT
133 D693 P6.4/TDO3I/OT
134 E6P6.5I/OT
135 A594 P6.6I/OT
136 B5P6.7I/OT
137 C595 P6.8/RDI0I/OT
138 A396 P6.9/TDO0I/OT
139 A2P6.10I/OT
140 D597 P6.11/MISO0I/OT
141 A498 P6.12/MOSI0I/OT
142 B499 P6.13/SCK0I/OT
143 C4 100 P6.14/SS
0I/OT
144 B3P6.15I/OT
InputOutput
pu/pd
Input Level
T
T
T
T
T
T
T
T
T
T
T
T
T
T
T
T
T
T
T
T
T
T
T
interrupt
INT72mA X X Port 5.9
INT82mA X X Port 5.10 UART2: receive data input
INT92mA X X Port 5.11 UART2: transmit data output
INT10 2mA X X Port 5.12
INT11 2mA X X Port 5.13
INT12 2mA X X Port 5.14
INT13 2mA X X Port 5.15
WUP0 8mA X X Port 6.0
WUP1 2mA X X Port 6.1
WUP2 2mA X X Port 6.2UART3: receive data input
WUP3 2mA X X Port 6.3
WUP4 2mA X X Port 6.4UART3: transmit data output
WUP5 2mA X X Port 6.5
WUP6 2mA X X Port 6.6
WUP7 2mA X X Port 6.7
WUP10 2mA X X Port 6.8UART0: receive data input
WUP8 2mA X X Port 6.10
WUP11 2mA X X Port 6.13 BSPI0: serial clock
WUP9 2mA X X Port 6.15
Main
OD
function
(after
PP
reset)
Alternate function
Capability
PWM5: PWM output (TQFP100
only)
1.8 V decoupling pin: a
decoupling capacitor
(recommended value: 100 nF)
must be connected between this
pin and nearest V
SS pin.
2mA X X Port 6.9UART0: transmit data output
2mA X X Port 6.11
2mA X X Port 6.12
BSPI0: master input/slave
output
BSPI0: master output/slave
input
2mA X X Port 6.14 BSPI0: slave select
19/52
Page 20
Block diagramSTR73xFxx
Flash memory space
64K/128/256 Kbytes
APB BRIDGE 1 REGS
Addressable memory space
0
1
2
3
4
1K
5
6
7
0x1FFF FFFF
0x2000 0000
0x3FFF FFFF
0x4000 0000
0x5FFF FFFF
0x6000 0000
0x7FFF FFFF
0x8000 0000
0x9FFF FFFF
0xA000 0000
0xBFFF FFFF
0xC000 0000
0xDFFF FFFF
0xE000 0000
0xFFFF FFFF
0xFFFF 8000
0xFFFF 83FF
0xFFFF 8400
0xFFFF 87FF
0xFFFF 8800
0xFFFF 8BFF
0xFFFF 8C00
0xFFFF 8FFF
0xFFFF 9000
0xFFFF 93FF
0xFFFF 9400
0xFFFF 97FF
0xFFFF 9800
0xFFFF 9BFF
0xFFFF 9C00
0xFFFF 9FFF
0xFFFF A000
0xFFFF A3FF
0xFFFF A800
0xFFFF ABFF
0xFFFF AC00
0xFFFF AFFF
0xFFFF B000
0xFFFF C3FF
0xFFFF C400
0xFFFF C7FF
0xFFFF C800
0xFFFF CBFF
0xFFFF CC00
0xFFFF D000
0xFFFF FFFF
1K
1K
1K
1K
1K
1K
1K
1K
1K
1K
1K
1K
0x0010 0017
0x6000 03FF
0x0000 0000
APB memory space
4 Gbytes
32 Kbytes
Flash
(1)
64K/128K/256K
PRCCU
1K
APB TO ARM7
BRIDGE
0xFFFF 8000
32K
EIC
0xFFFF FC00
1K
APB BRIDGE 0 REGS
0xFFFF FBFF
0xFFFF CFFF
CONFIG. REGS
64B
Drawing not to scale
0x4000 003F
Flash
0x8010 0017
64K/128K/256K
0xFFFF C000
0xFFFF D400
0xFFFF D3FF
0xFFFF D800
0xFFFF D7FF
0xFFFF DC00
0xFFFF DBFF
0xFFFF E000
0xFFFF DFFF
0xFFFF E400
0xFFFF E3FF
0xFFFF E800
0xFFFF E7FF
0xFFFF EC00
0xFFFF EBFF
1K
1K
1K
1K
1K
1K
1K
1K
1K
1K
1K
1K
I2C 0
reserved
reserved
reserved
TB 0-2
UART 0
UART 1
TIM 0
TIM 1
CAN 0
(4)
CAN 1
(4)
CAN 2
(4)
PWM 0-5
GP I/O 0-6
BSPI 0
BSPI 1
BSPI 2
DMA 0-3
RTC
ADC
0xFFFF F800
0xFFFF F7FF
0xFFFF F400
0xFFFF F3FF
0xFFFF F000
0xFFFF EFFF
0xFFFF B3FF
0xFFFF B400
0xFFFF B7FF
0xFFFF B800
RAM
16K
1K
0xFFFF BBFF
TIM 2
TIM 3
TIM 4
TIM 5-9
reserved
WAKEUP
reserved
1K
0xFFFF BFFF
0xFFFF BC00
I2C 1
access to gray shaded area will return an ABORT
B0F5
(3)
0x8000 1FFF
0x8000 0000
0x8000 2000
0x8000 3FFF
0x8000 4000
0x8000 5FFF
0x8000 6000
0x8000 7FFF
0x8000 8000
0x8000 FFFF
0x8001 0000
0x8001 FFFF
0x8010 0000
0x8010 0017
0x8010 C000
0x8010 DFFF
8K
8K
8K
8K
32K
8K
20B
64K
B0F4
Flash registers
NATIVE ARBITER
16B
B0F6
(2)
0x8002 0000
0x8002 FFFF
64K
B0F7
(2)
0x8003 0000
0x8003 FFFF
64K
UART 2
UART 3
0xFFFF 9E00
0xFFFF A200
CMU
0xFFFF F600
0x2000 000F
System Memory
B0F3
B0F2
B0F1
B0TF
1K
1K
1K
(1) Flash aliased at 0x0000 0000h by system decoder for boot ing with valid instruction upon RESET from Block B0 (8 Kbytes)
0xFFFF A400
0xFFFF A7FF
1K
WDG
WAKEUPTIM
0xFFFF A600
0xA000 3FFF
(2) Only available in STR73xZ2/V2
(3) Only available in STR73xZ2/V2 and STR73xZ1/V1
(4) Only available in STR730/STR731
3.3 Memory mapping
Figure 5 shows the various memory configurations of the STR73xF system. The system
memory map (from 0x0000_0000 to 0xFFFF_FFFF) is shown on the left part of the figure,
the right part shows maps of the Flash and APB areas. For flexibility the Flash or RAM
addresses can be aliased to Block 0 addresses using the remapping feature
Most reserved memory spaces (gray shaded areas in Figure 5) are protected from access
by the user code. When an access this memory space is attempted, an ABORT signal is
generated. Depending on the type of access, the ARM processor will enter “prefetch abort”
state (Exception vector 0x0000_000C) or “data abort” state (Exception vector
0x0000_0010). It is up to the application software to manage these abort exceptions.
Figure 5.Memory map
20/52
Page 21
STR73xFxxElectrical parameters
=50pF
STR7 PIN
V
IN
STR7 PIN
4 Electrical parameters
4.1 Parameter conditions
Unless otherwise specified, all voltages are referred to VSS.
4.1.1 Minimum and maximum values
Unless otherwise specified the minimum and maximum values are guaranteed in the worst
conditions of ambient temperature, supply voltage and frequencies by tests in production on
100% of the devices with an ambient temperature at T
selected temperature range).
Data based on characterization results, design simulation and/or technology characteristics
are indicated in the table footnotes and are not tested in production. Based on
characterization, the minimum and maximum values refer to sample tests and represent the
mean value plus or minus three times the standard deviation (mean±3Σ).
4.1.2 Typical values
Unless otherwise specified, typical data are based on TA=25° C and VDD=5 V. They are
given only as design guidelines and are not tested.
=25° C and TA=T
A
(given by the
Amax
Typical ADC accuracy values are determined by characterization of a batch of samples from
a standard diffusion lot over the full temperature range, where 95% of the devices have an
error less than or equal to the value indicated
4.1.3 Typical curves
Unless otherwise specified, all typical curves are given only as design guidelines and are
not tested.
4.1.4 Loading capacitor
The loading conditions used for pin parameter measurement are shown in Figure 6.
4.1.5 Pin input voltage
The input voltage measurement on a pin of the device is described in Figure 7.
Figure 6.Pin loading conditionsFigure 7.Pin input voltage
(mean±2Σ).
21/52
Page 22
Electrical parametersSTR73xFxx
4.2 Absolute maximum ratings
Stresses above those listed as “absolute maximum ratings” may cause permanent damage
to the device. This is a stress rating only and functional operation of the device under these
conditions is not implied. Exposure to maximum rating conditions for extended periods may
affect device reliability.
Table 5.Voltage characteristics
SymbolRatingsMinMaxUnit
V
|V
V
DD
DDA
|ΔV
SSX
V
V
- V
SSA
- V
IN
DDx
- VSS|
SS
SSA
External 5 V Supply voltage-0.36.0
Reference ground for A/D converter V
SS
Reference voltage for A/D converter-0.3
Input voltage on any pin-0.3
Variations between different 5 V
|
power pins
Variations between all the different
ground pins
-0.3
-0.3
V
SSV
+0.3
V
DD
+0.3
V
DD
V
V
mV
V
ESD(HBM)
V
ESD(MM)
Table 6.Current characteristics
Electrostatic discharge voltage
(Human Body Model)
Electrostatic discharge voltage
(Machine Model)
see : Absolute maximum ratings
(electrical sensitivity) on page 36
SymbolRatings Max.Unit
I
VDD
I
VSS
I
IO
2) & 3)
I
INJ(PIN)
ΣI
INJ(PIN)
1. All 5 V power (VDD, V
supply
2. I
3. Negative injection disturbs the analog performance of the device. See note in Section 4.3.6: 10-bit ADC
4. When several inputs are submitted to a current injection, the maximum
5.) In 144-pin devices, only +10 mA on P0.3, P1.13, P3.6 and P4.13 pins (negative injection not allowed).
must never be exceeded. This is implicitly insured if VIN maximum is respected. If VIN maximum
INJ(PIN)
cannot be respected, the injection current must be limited externally to the I
injection is induced by V
characteristics on page 43.
positive and negative injected currents (instantaneous values). These results are based on
characterization with
Total current into V
power lines (source)
DD
Total current out of VSS ground lines (sink)
Output current sunk by any I/O and control pin10
Output current source by any I/O and control pin10
Injected current on any other pin
2)
Total injected current (sum of all I/O and control pins)
) and ground (VSS, V
DDA
while a negative injection is induced by VIN<VSS.
IN>VDD
Σ
I
maximum current injection on four I/O port pins of the device.
INJ(PIN)
4) &5)
) pins must always be connected to the external 5 V
SSA
1)
1)
100
100
±10
Σ
I
INJ(PIN)
4)
INJ(PIN)
is the absolute sum of the
±75
value. A positive
mA
22/52
Page 23
STR73xFxxElectrical parameters
Table 7.Thermal characteristics
SymbolRatings ValueUnit
T
STG
T
J
Storage temperature range-55 to +150°C
Maximum junction temperature (see Section 5.2: Thermal characteristics on
page 48)
23/52
Page 24
Electrical parametersSTR73xFxx
4.3 Operating conditions
Subject to general operating conditions for VDD, and TA.
Table 8.General operating conditions
SymbolParameter ConditionsMinMaxUnit
Accessing SRAM or Flash
(zero wait state Flash access
up to 36 MHz)
f
MCLK
V
DD
Internal CPU and system
clock frequency
Standard Operating
Voltage
Operating analog reference
V
DDA
T
A
Table 9.Operating conditions at power-up / power-down
voltage with respect to
ground
Ambient temperature range
6 partnumber suffix
7 partnumber suffix
SymbolParameterConditionsMin
Subject to general
t
VDD
VDD rise time rate
operating conditions for
.
T
A
036MHz
4.55.5V
4.5V
-40
-40
Typ
DD
85
105
MaxUnit
+0.1V
°C
-20-ms/V
24/52
Page 25
STR73xFxxElectrical parameters
4.3.1 Supply current characteristics
The current consumption is measured as described in Figure 6 and Figure 7.
Total current consumption
The MCU is placed under the following conditions:
●All I/O pins in input mode with a static value at V
●All peripherals are disabled except if explicitly mentioned.
or VSS (no load)
DD
Subject to general operating conditions for V
DD
Table 10.Total current consumption
SymbolParameterConditions
Formula, f
3)
f
RUN mode
WFI mode
= 36 MHz, RAM execution
MCLK
f
= 36 MHz, Flash execution
MCLK
f
= 4 MHz, f
OSC
Main voltage regulator ON,
LP voltage regulator = 2 mA,
RTC and WDG on, other modules off.
f
= high frequency (CMU_RCCTL= 0x8),
RC
= f
f
LPWFI mode
MCLK
LP voltage regulator = 2 mA,
other modules off.
I
DD
= 4 MHz, RC oscillator on
f
OSC
= high frequency (CMU_RCCTL= 0x0)
f
RC
LP voltage regulator = 6 mA,
RTC and WUT ON, other modules off.
Internal wake-up possible.
STOP mode
= high frequency (CMU_RCCTL= 0xF),
f
RC
LP voltage regulator = 2mA.
WUT ON, other modules off.
Internal wake-up possible.
LP voltage regulator = 2 mA, WIU on, Other
modules off, external wake-up.
HALT modeLP voltage regulator = 2 mA.50140µA
in MHz, RAM execution7 + 1.9 f
MCLK
= f
RC
MCLK
/16,
OSC
, and TA.
/16 = 250 kHz
Typ
1)
MCLK
Max
2)
76mA
86mA
6.78mA
220350µA
500700
150220
50140
Unit
mA
µA
1. Typical data are based on TA=25° C, VDD=5 V
2. Data based on characterization results, tested in production at V
3. I/O in static configuration (not toggling). RUN mode is almost independent of temperature. On the
contrary RUN mode current is highly dependent on the application. The I
significantly reduced by the application in the following ways: switch-off unused peripherals (default),
reduce peripheral frequency through internal prescaler, fetch the most frequently-used functions from RAM
and use low power mode when possible.
max. and TA = 25° C.
DD
DDRUN
value can be
25/52
Page 26
Electrical parametersSTR73xFxx
0
50
100
150
200
250
300
3.544.555.566. 5
Vdd (V)
Idd STOP (µA)
TA=-45°C
TA=25°C
TA=85°C
TA=105°C
0
50
100
150
200
250
300
3.544.555.566.5
Vdd (V)
Idd HALT (µA)
TA=-45°C
TA=25°C
TA=85°C
TA=105°C
5.5
6.0
6.5
7.0
7.5
8.0
3.544.555.566. 5
Vdd (V)
Idd Wfi (mA)
TA= -45 °C
TA= 25° C
TA= 85° C
TA=105°C
0
50
100
150
200
250
300
350
400
450
500
3.544. 555.566.5
Vdd (V)
Idd LPWFI (µA)
TA=-45°C
TA=25°C
TA=85°C
TA=105°C
Figure 8.STOP IDD vs. VDDFigure 9.HALT IDD vs. V
Figure 10. WFI IDD vs. V
DD
Figure 11. LPWFI IDD vs. V
DD
DD
26/52
Page 27
STR73xFxxElectrical parameters
Typical application current consumption
Table 11.Typical consumption in Run mode at 25°C and 85°C
Conditionsf
MCLK
(MHz) f
(MHz) Typical I
ADC
10
10
10
VDD= 5.5 V, RC oscillator off,
PLL on, RTC enabled, 1 Timer
(TIM) running, and ADC
running in scan mode.
Code executing in
RAM
Code executing in
Flash
2029
36942
10
2032
36948
Table 12.Typical consumption in Run and low power modes at 25°C
ModeConditionsf
RUN All peripherals on, RAM execution
WFI
Main voltage regulator on, Flash on, EIC on, WIU on,
GPIOs on.
PLL off, main voltage regulator on4 MHz11 mA
CLOCK2/16, main voltage regulator on250 kHz8 mA
SLOW
CLOCK2/16, main voltage regulator off250 kHz3 mA
RC oscillator running in low frequency, main crystal
oscillator off, main voltage regulator off
LPWFI
CLOCK2/16, main voltage regulator off, LP voltage
regulator = 2 mA, Flash in power down mode.
Main voltage regulator off, RTC on, RC oscillator off,
LP voltage regulator = 6 mA
MCLK
36 MHz76 mA
24 MHz56 mA
36 MHz33 mA
24 MHz31 mA
29 kHz2.5 mA
250 kHz528 µA
-378 µA
DD
20
22
Typical I
(mA)
DD
Main voltage regulator off, RTC off, RC oscillator off,
LP voltage regulator = 6 mA
-83 µA
STOP
Main voltage regulator off, RTC off, RC oscillator off,
LP voltage regulator = 4 mA
Main voltage regulator off, RTC off, RC oscillator off,
LP voltage regulator = 2 mA
-64 µA
-44 µA
HALTRTC off, LP voltage regulator = 2 mA-44 µA
27/52
Page 28
Electrical parametersSTR73xFxx
On-chip peripherals
Table 13.Peripheral current consumption at TA= 25°C
SymbolParameterConditionsTypUnit
I
DD(RC)
I
DD(TIM)
I
DD(BSPI)
I
DD(UART)
I
DD(I2C)
I
DD(ADC)
I
DD(EIC)
I
DD(CAN)
I
DD(GPIO)
I
DD(TB)
I
DD(PWM)
I
DD(RTC)
I
DD(DMA)
I
DD(ARB)
I
DD(AHB)
I
DD(WUT)
I
DD(WIU)
RC (backup oscillator) supply current
High frequency120µA
Low frequency60µA
TIM timer supply current
BSPI supply current
UART supply current
I2C supply current
1)
1)
1)
1)
ADC supply current when converting
2)
350µA
1.1mA
850µA
430µA
5mA
EIC supply current 2.88mA
CAN supply current
GPIO supply current 150µA
1)
f
=36 MHz
MCLK
2.95mA
TB supply current 250µA
PWM supply current 240µA
RTC supply current 370µA
DMA supply current 2.5mA
Native arbiter supply current 180µA
AHB arbiter supply current570µA
WUT supply current 300µA
WIU supply current 460µA
1. Data based on a differential IDD measurement between the on-chip peripheral when kept under reset, not
clocked and the on-chip peripheral when clocked and not kept under reset. This measurement does not
include the pad toggling consumption.
2. Data based on a differential I
conversions.
measurement between reset configuration and continuous A/D
DD
28/52
Page 29
STR73xFxxElectrical parameters
C
L
C
L
Crystal
XTAL1
XTAL2
R
S
Resonator
XTAL1
XTAL2
STR73x
STR73x
STR73x
XTAL1
XTAL2
I
R
F
V
DD
4.3.2 Clock and timing characteristics
Crystal / ceramic resonator oscillator
The STR73xF can operate with a crystal oscillator or resonator clock source. Figure 12 describes a
simple model of the internal oscillator driver as well as example of connection for an oscillator or a
resonator.
Figure 12. Crystal oscillator and resonator
Note:1XTAL2 must not be used to directly drive external circuits.
2For test or boot purpose, XTAL2 can be used as an high impedance input pin to provide an
external clock to the device. XTAL1 should be grounded, and XTAL2 connected to a wave
signal generator providing a 0 to VDD signal. Directly driving XTAL2 may results in
deteriorated jitter and duty cycle.
3. Max value is guaranteed by characterization, not tested in production.
PLL lock time
PLL jitter (pk to pk)
is obtained from f
directly or through an optional divider by 2.
OSC
=25°C, VDD=5V
A
Stable oscillator
(f
= 4 MHz), stable V
PLLIN
= 4 MHz (pulse
f
PLLIN
generator)
MinTypMax
1.5
3.0
20 x f
12 x f
28 x f
16 x f
PLLOUT
DD
Val ue
Unit
3.0
MHz
5.0
PLLIN
PLLIN
PLLIN
PLLIN
MHz
/DX36MHz
120
240
240
kHz
480
100300μs
1.5ns
Table 17.Low-power mode wake-up timing
SymbolParameter ConditionsTypUnit
t
WUHALT
t
WUSTOP
Wake-up from HALT mode200µs
RC high frequency in STOP mode180µs
Wake-up from STOP mode
RC low frequency in STOP mode234µs
Main voltage regulator on
RC oscillator off
f
OSC
= 4 MHz, f
MCLK
= f
OSC
/16
27µs
RAM or FLASH execution
t
WULPWFI
1)
Wake-up from LPWFI mode
Main voltage regulator on
RC oscillator = high frequency
46µs
Flash execution
Main voltage regulator on
RC oscillator = low frequency
3.6ms
Flash execution
1. Flash memory programmed to enter Power Down mode during LPWFI.
33/52
Page 34
Electrical parametersSTR73xFxx
4.3.3 Memory characteristics
Flash memory
Table 18.Flash memory characteristics
Val ue
SymbolParameter Test Conditions
MinTyp
Max
Unit
1)
t
WP
t
DWP
t
BP64
t
BP128
t
BP256
t
SE8
t
SE32
t
SE64
t
RPD
t
PSL
t
ESL
t
ESR
t
SP
t
FPW
N
END
t
RET
Word program (32-bit)3580μs
Double word program(64-bit)64150μs
Bank program (64 K)Double word program0.51.25s
Bank program (128 K)Double word program12.5s
Bank program (256 K)Double word program24.9s
Sector erase (8 K)
Sector erase (32 K)
Sector erase (64 K)
3)
Recovery from power-down20μs
3)
Not preprogrammed
Preprogrammed
2)
Not preprogrammed
Preprogrammed
Not preprogrammed
preprogrammed
2)
2)
0.6
0.5
1.1
0.821.8
1.7
1.3
Program suspend latency10μs
3)
Erase suspend latency30μs
3)
Erase suspend rate
Min. time from erase
resume to next erase
2020ms
suspend
3)
Set protection40170µs
3)
First word program 1ms
Endurance
Data retentionTA = 85° C
10kcycles
20
0.9
0.8
3.7
3.3
s
s
s
Ye a r s
1. TA = -45° C after 0 cycles, Guaranteed by characterization, not tested in production.
2. All bits programmed to 0.
3. Guaranteed by design, not tested in production.
34/52
Page 35
STR73xFxxElectrical parameters
4.3.4 EMC characteristics
Susceptibility tests are performed on a sample basis during product characterization.
Functional EMS (electromagnetic susceptibility)
Based on a simple running application on the product (toggling 2 LEDs through I/O ports),
the product is stressed by two electromagnetic events until a failure occurs (indicated by the
LEDs).
●ESD: Electrostatic discharge (positive and negative) is applied on all pins of the device
until a functional disturbance occurs. This test conforms with the IEC 1000-4-2
standard.
●FTB: A burst of fast transient voltage (positive and negative) is applied to V
through a 100 pF capacitor, until a functional disturbance occurs. This test conforms
with the IEC 1000-4-4 standard.
A device reset allows normal operations to be resumed. The test results are given in the
table below based on the EMS levels and classes defined in application note AN1709.
Designing hardened software to avoid noise problems
EMC characterization and optimization are performed at component level with a typical
application environment and simplified MCU software. It should be noted that good EMC
performance is highly dependent on the user application and the software in particular.
and VSS
DD
Therefore it is recommended that the user applies EMC software optimization and
prequalification tests in relation with the EMC level requested for his application.
Software recommendations:
The software flowchart must include the management of runaway conditions such as:
●Corrupted program counter
●Unexpected reset
●Critical data corruption (control registers...)
Prequalification trials:
Most of the common failures (unexpected reset and program counter corruption) can be
reproduced by manually forcing a low state on the RESET pin or the oscillator pins for 1
second.
To complete these trials, ESD stress can be applied directly on the device, over the range of
specification values. When unexpected behavior is detected, the software can be hardened
to prevent unrecoverable errors occurring (see application note AN1015).
Table 19.EMS data
SymbolParameterConditions
=5 V, TA=+25° C, f
V
V
FESD
EFTB
Voltage limits to be applied on any I/O pin
to induce a functional disturbance
Fast transient voltage burst limits to be
applied through 100 pF on V
pins to induce a functional disturbance
DD
and V
V
DD
conforms to IEC 1000-4-2
=5 V, TA=+25° C, f
V
SS
DD
conforms to IEC 1000-4-4
MCLK
MCLK
=36 MHz
=36 MHz
Level/
Class
4A
4A
35/52
Page 36
Electrical parametersSTR73xFxx
Electromagnetic interference (EMI)
Based on a simple application running on the product (toggling 2 LEDs through the I/O
ports), the product is monitored in terms of emission. This emission test is in line with the
norm SAE J 1752/3 which specifies the board and the loading of each pin.
Table 20.EMI data
SymbolParameterConditions
Monitored
frequency band
Max vs.
[f
OSC4M/fMCLK
Unit
]
6/36 MHz 8/8 MHz
0.1 MHz to 30 MHz2330
V
=5.0V,
S
EMI
Peak level
DD
=+25°C,
T
A
All packages
130 MHz to 1 GHz207
dBµV30 MHz to 130 MHz3734
SAE EMI Level43.5-
Absolute maximum ratings (electrical sensitivity)
Based on three different tests (ESD, LU and DLU) using specific measurement methods, the
product is stressed in order to determine its performance in terms of electrical sensitivity.
For more details, refer to the application note AN1181.
Electrostatic discharge (ESD)
Electrostatic discharges (a positive then a negative pulse separated by 1 second) are
applied to the pins of each sample according to each pin combination. The sample size
depends on the number of supply pins in the device (3 parts*(n+1) supply pin). Two models
can be simulated: human body model and machine model. This test conforms to the
JESD22-A114A/A115A standard.
Table 21.ESD Absolute Maximum ratings
SymbolRatingsConditions
V
ESD(HBM)
V
ESD(MM)
V
ESD(CDM)
Notes:
1. Data based on characterization results, not tested in production.
Electrostatic discharge voltage
(human body model)
Electrostatic discharge voltage
(machine model)
Electrostatic discharge voltage
(charge device model)
Static and dynamic latch-up
●LU: 3 complementary static tests are required on 10 parts to assess the latch-up
performance. A supply overvoltage (applied to each power supply pin) and a current
injection (applied to each input, output and configurable I/O pin) are performed on each
36/52
=+25° C
T
A
Maximum
1)
value
2000
200
750 on corner
pins, 500 on
others
Unit
V
Page 37
STR73xFxxElectrical parameters
sample. This test conforms to the EIA/JESD 78 IC latch-up standard. For more details,
refer to the application note AN1181.
●DLU: Electrostatic discharges (one positive then one negative test) are applied to each
pin of 3 samples when the micro is running to assess the latch-up performance in
dynamic mode. Power supplies are set to the typical values, the oscillator is connected
as near as possible to the pins of the micro and the component is put in reset mode.
This test conforms to the IEC1000-4-2 and SAEJ1752/3 standards. For more details,
refer to the application note AN1181.
Table 22.Electrical sensitivities
SymbolParameterConditions
Class
1)
TA=+25°C
=+85°C
LUStatic latch-up class
DLUDynamic latch-up class
1. Class description: A Class is an STMicroelectronics internal specification. All its limits are higher than the
JEDEC specifications, that means when a device belongs to Class A it exceeds the JEDEC standard. B
Class strictly covers all the JEDEC criteria (international standard).
T
A
=+105°C
T
A
= 5.5 V, f
V
DD
TA = +25° C
OSC4M
= 4 MHz, f
MCLK
= 32 MHz,
A
A
A
A
37/52
Page 38
Electrical parametersSTR73xFxx
4.3.5 I/O port pin characteristics
General characteristics
Subject to general operating conditions for VDD and TA unless otherwise specified.
Table 23.I/O static characteristics
SymbolParameterConditionsMin
Typ
MaxUnit
V
V
I
INJ(PIN)
ΣI
INJ(PIN)
I
R
R
C
1. Data based on characterization results, not tested in production.
2. When the current limitation is not possible, the V
refer to I
induced by VIN<VSS. Refer to Section 4.2 on page 22 for more details.
3. Leakage could be higher than max. if negative current is injected on adjacent pins.
4. Configuration not recommended, all unused pins must be kept at a fixed voltage: using the output mode of
the I/O for example or an external pull-up or pull-down resistor. Data based on design simulation and/or
technology characteristics, not tested in production.
6. The R
I
PU
Input low level voltage
IL
Input high level voltage
IH
Injected current on any I/O pin±10mA
Total injected current (sum of all
I/O and control pins)
2)
Input leakage current
lkg
I
Static current consumption
S
Weak pull-up equivalent
PU
resistor
5)
Weak pull-down equivalent
PD
IO
INJ(PIN)
pull-up and RPD pull-down equivalent resistor are based on a resistive transistor (corresponding
PU
and IPD current characteristics described in Figure 19).
5)
resistor
I/O pin capacitance5pF
specification. A positive injection is induced by VIN>V33 while a negative injection is
1)
1)
TTL ports
2.0
0.8
V
±75mA
3)
V
Floating input
4)
mode
V
V
SS≤VIN≤VDD
±1μA
200µA
IN=VSS
IN=VDD
absolute maximum rating must be respected, otherwise
IN
55120220kΩ
55120220kΩ
38/52
Page 39
STR73xFxxElectrical parameters
4.50
4.60
4.70
4.80
4.90
5.00
5.10
01234
Ioh (mA)
VOH(V ) at V DD= 5 V
Ta -45°C
Ta 25°C
Ta 90°C
Ta 110°C
0.00
0.05
0.10
0.15
0.20
0.25
01234
Iol (mA)
VOL(V) at VDD= 5 V
Ta -45°C
Ta 25°C
Ta 90°C
Ta 110°C
Output driving current
Subject to general operating conditions for V
Table 24.Output driving current
I/O TypeSymbolParameterConditionsMinMaxUnit
Output low level voltage for an I/O pin
1)
V
OL
when 8 pins are sunk at same time
Standard
Output high level voltage for an I/O pin
2)
V
OH
Med.
V
Current
(JTDO)
High
V
V
OH
Current
P6.0
1. The IIO current sunk must always respect the absolute maximum rating specified in Table 6 and the sum of
IIO (I/O ports and control pins) must not exceed I
2. The I
sum of IIO (I/O ports and control pins) must not exceed IVDD.
V
OH
current sourced must always respect the absolute maximum rating specified in Table 6 and the
IO
when 4 pins are sourced at same time
1)
Output low level voltage for an I/O pin
OL
2)
Output high level voltage for an I/O pin
1)
Output low level voltage for an I/O pin
OL
2)
Output high level voltage for an I/O pin
Figure 13. VOH standard ports vs IOH @ VDD 5V
T
-45° C
A
and TA unless otherwise specified.
DD
.
VSS
Figure 14. V
=+2 mA
I
IO
0.4
IIO=-2 mAVDD-0.8
=+6 mA
I
IO
=-6 mAVDD-0.8
I
IO
=+8 mA
I
IO
=-8 mAVDD-0.8
I
IO
standard ports vs IOL @ VDD 5 V
OL
0.4
0.4
V
39/52
Page 40
Electrical parametersSTR73xFxx
4.50
4.60
4.70
4.80
4.90
5.00
5.10
0123456
Ioh (mA)
VOH(V ) at V DD= 5 V
Ta -45°C
Ta 25°C
Ta 90°C
Ta 110°C
0.00
0.02
0.04
0.06
0.08
0.10
0.12
0.14
01.22.43.64.86
Iol (mA)
VOL(V) at VDD= 5 V
Ta -45°C
Ta 25°C
Ta 90°C
Ta 110°C
4.50
4.60
4.70
4.80
4.90
5.00
5.10
012345678
Ioh (mA)
VOH(V ) at V DD= 5 V
Ta -45°C
Ta 25°C
Ta 90°C
Ta 110°C
0.00
0.02
0.04
0.06
0.08
0.10
0.12
0.14
0.16
0.18
012345678
Iol (mA)
VOL(V) at VDD= 5 V
Ta -45°C
Ta 25°C
Ta 90°C
Ta 110°C
Figure 15. VOH JTDO pin vs IOL @ VDD 5 VFigure 16. VOL JTDO pin vs IOL @ VDD 5 V
Figure 17. VOH P6.0 pin vs IOL @ VDD 5 VFigure 18. VOL P6.0 pin vs IOL @ VDD 5 V
40/52
Page 41
STR73xFxxElectrical parameters
0.01μF
EXTERNAL
RESET
CIRCUIT
Required
STR7X
Filter
R
PU
V
DD
INTERNAL RESET
NRSTIN pin
The NRSTIN pin input driver is CMOS. A permanent pull-up is present which is the same as
R
(see : General characteristics on page 38)
PU
Subject to general operating conditions for
Table 25.Reset pin characteristics
SymbolParameterConditionsMin
V
and TA unless otherwise specified.
DD
Typ
1)
MaxUnit
V
IL(NRSTIN)
V
IH(NRSTIN)
V
hys(NRSTIN)
V
F(RSTINn)
V
NF(RSTINn)
V
RP(RSTINn)
1. Data based on characterization results, not tested in production.
2. Hysteresis voltage between Schmitt trigger switching levels.
3. Data guaranteed by design, not tested in production.
NRSTIN Input low level voltage
NRSTIN Input high level voltage
NRSTIN Schmitt trigger voltage
hysteresis
2)
NRSTIN Input filtered pulse
NRSTIN Input not filtered pulse
NRSTIN removal after Power-up
1)
1)
3)
3)
3)
Figure 19. Recommended NRSTIN pin protection
0.3 V
DD
0.7 V
DD
V
800mV
500ns
2µs
100µs
1)
1. The R
2. The reset network protects the device against parasitic resets.
3. The user must ensure that the level on the NRSTIN pin can go below the V
Table 25. Otherwise the reset will not be taken into account internally.
pull-up equivalent resistor is based on a resistive transistor.
PU
41/52
IL(NRSTIN)
max. level specified in
Page 42
Electrical parametersSTR73xFxx
0
50
100
150
200
250
33.544.555.5
Vdd (v)
Rpu (kOhm )
25C
-45C
110C
Figure 20. NRSTIN RPU vs. V
DD
42/52
Page 43
STR73xFxxElectrical parameters
4.3.6 10-bit ADC characteristics
Subject to general operating conditions for V
Table 26.ADC characteristics
DDA
, f
, and TA unless otherwise specified.
MCLK
SymbolParameter ConditionsMinTyp
f
V
C
t
CAL
ADC
AIN
I
lkg
ADC
t
S
Conversion voltage range
Negative input leakage current on
analog pins
Internal sample and hold
capacitor
2)
Calibration time
3)
Sampling time
2)
| I
V
IN<VSS,
|< 400
IN
µA on adjacent
analog pin
= 10 MHz
f
ADC
f
= 10 MHz
ADC
0.410MHz
V
SSA
114µs
3µs
t
CONV
Total conversion time (including
sampling time)
f
ADC
= 10 MHz
30 (10 for sampling
+20 for successive
approximation)
I
ADC
Running modeNormal mode5mA
Power-down mode1μA
1)
MaxUnit
V
DDA
56μA
3.5pF
580.2µs
58021/f
1/f
V
ADC
ADC
1. Unless otherwise specified, typical data are based on TA=25°C and V
as design guidelines and are not tested.
2. Calibration is recommended once after each power-up.
3. During the sample time the input capacitance C
source. The internal resistance of the analog source must allow the capacitance to reach its final voltage
level within t
the conversion result. Values for the sample clock t
After the end of the sample time tS, changes of the analog input voltage have no effect on
S.
(6.8 max) can be charged/discharged by the external
AIN
depend on programming.
S
DDA-VSS
=5.0V. They are given only
43/52
Page 44
Electrical parametersSTR73xFxx
E
O
E
G
1LSB
IDEAL
1LSB
IDEAL
V
DDAVSSA
–
1024
-----------------------------------------=
V
(1) Example of an actual transfer curve
(2) The ideal transfer curve
(3) End point correlation line
ET=Total Unadjusted Error: maximum deviation
between the actual and the ideal transfer curves.
EO=Offset Error: deviation between the first actual
transition and the first ideal one.
EG=Gain Error: deviation between the last ideal
transition and the last actual one.
ED=Differential Linearity Error: maximum deviation
between actual steps and the ideal one.
EL=Integral Linearity Error: maximum deviation
between any actual transition and the end point
correlation line.
1023
1022
1021
5
4
3
2
1
0
7
6
1234567
1021 1022 1023 1024
(1)
(2)
E
T
E
D
E
L
(3)
V
DDA
V
SSA
AINx
STR73X
V
DD
I
L
±1μA
V
T
0.6V
V
T
0.6V
C
ADC
3.5pF
V
AIN
R
AIN
10-Bit A/D
conversion
2.3kΩ(max)
C
AIN
Table 27.ADC accuracy with f
V
=5 V. This assumes that the ADC is calibrated
DDA
SymbolParameter ConditionsTypMaxUnit
MCLK
= 20 MHz, f
=10 MHz, R
ADC
< 10 kΩ RAIN,
AIN
2)
1)
1)
1.02.0
0.151.0
0.971.1
1)
0.71.0
LSB
0.761.5
INJ(PIN)
and ΣI
in Section 4.3.5 does not
INJ(PIN)
|E
|
Total unadjusted error
T
|EO|
|E
|E
|EL|
1. ADC accuracy vs. negative injection current: Injecting negative current on any of the standard (non-robust)
analog input pins should be avoided as this significantly reduces the accuracy of the conversion being
performed on another analog input. It is recommended to add a Schottky diode (pin to ground) to standard
analog pins which may potentially inject negative current. The effect of negative injection current on robust
pins is specified in Section 4.3.5.
Any positive injection current within the limits specified for I
affect the ADC accuracy.
Offset error
|
Gain error
G
|
Differential linearity error
D
Integral linearity error
1)
1)
2. Calibration is needed once after each power-up.
Figure 21. ADC accuracy characteristics
Figure 22. Typical application with ADC
44/52
Page 45
STR73xFxxElectrical parameters
V
SS
V
DD
0.1 μF
5V
STR73x
V
DDA
V
SSA
POWER
SUPPLY
SOURCE
STR7
DIGITAL NOISE
FILTERING
EXTERNAL
NOISE
FILTERING
1 to 10 μF
0.1 μF
Analog power supply and reference pins
The V
DDA
and V
pins are the analog power supply of the A/D converter cell. They act as
SSA
the high and low reference voltages for the conversion.
Separation of the digital and analog power pins allow board designers to improve A/D
performance. Conversion accuracy can be impacted by voltage drops and noise in the event
of heavily loaded or badly decoupled power supply lines (see: General PCB design
guidelines).
General PCB design guidelines
To obtain best results, some general design and layout rules should be followed when
designing the application PCB to shield the noise-sensitive, analog physical interface from
noise-generating CMOS logic signals.
●Use separate digital and analog planes. The analog ground plane should be connected
to the digital ground plane via a single point on the PCB.
●Filter power to the analog power planes. It is recommended to connect capacitors, with
good high frequency characteristics, between the power and ground lines,
0.1 µF and optionally, if needed 10 pF capacitors as close as possible to the STR7
power supply pins and a 1 to 10 µF capacitor close to the power source (see
Figure 23).
●The analog and digital power supplies should be connected in a star network. Do not
use a resistor, as V
used as a reference voltage by the A/D converter and any
DDA is
resistance would cause a voltage drop and a loss of accuracy.
●Properly place components and route the signal traces on the PCB to shield the analog
inputs. Analog signals paths should run over the analog ground plane and be as short
as possible. Isolate analog signals from digital signals that may switch while the analog
inputs are being sampled by the A/D converter. Do not toggle digital outputs near the
A/D input being converted.
placing
Software filtering of spurious conversion results
For EMC performance reasons, it is recommended to filter A/D conversion outliers using
software filtering techniques.
Figure 23. Power supply filtering
45/52
Page 46
Package characteristicsSTR73xFxx
Dim.
mminches
(1)
Min Typ Max MinTypMax
A 1.600.0630
A1 0.050.15 0.00200.0059
A2 1.35 1.40 1.45 0.0531 0.0551 0.0571
b0.17 0.22 0.27 0.0067 0.0087 0.0106
C0.09 0.20 0.00350.0079
D 16.00 0.6299
D1 14.00 0.5512
E 16.00 0.6299
E1 14.00 0.5512
e0.500.0197
h0°3.5° 7°0°3.5°7°
L0.45 0.60 0.75 0.0177 0.0236 0.0295
L1 1.00 0.0394
Number of Pins
N100
1. Values in inches are converted from mm and
rounded to 4 decimal digits.
h
c
L
L1
e
b
A
A2
A1
D
D1
E
E1
Dim.
mminches
(1)
1. Values in inches are converted from mm
and rounded to 4 decimal digits.
Min Typ Max MinTypMax
A1.600.0630
A1 0.050.15 0.00200.0059
A2 1.35 1.40 1.45 0.0531 0.0551 0.0571
b0.17 0.22 0.27 0.0067 0.0087 0.0106
c0.090.20 0.00350.0079
D 21.80 22.00 22.20 0.8583 0.8661 0.8740
D1 19 .80 20.00 20.20 0.7795 0.7874 0.7953
D317.500.6890
E 21.80 22.00 22.20 0.8583 0.8661 0.8740
E1 19.80 20.00 20.20 0.7795 0.7874 0.7953
E317.500.6890
e0.500.0197
K0° 3.5°7°0°3.5°7°
L0.45 0.60 0.75 0.0177 0.0236 0.0295
L11.000.0394
Number of Pins
N144
A
A2
A1
b
c
36
37
72
73108
109
144
E1
E
D1
D
1
h
b
L
L1
Seating Plane
0.10mm
.004 in.
e
E3
D3
5 Package characteristics
5.1 Package mechanical data
Figure 24. 100-pin thin quad flat package
Figure 25. 144-pin thin quad flat package
46/52
Page 47
STR73xFxxPackage characteristics
Dim.
mminches
1)
Min Typ Max MinTypMax
A 1.211.70 0.04760.0669
A1 0.210.0083
A21.0850.0427
b0.35 0.40 0.45 0.0138 0.0157 0.0177
D 9.85 10.00 10.15 0.3878 0.3937 0.3996
D18.800.3465
E9.85 10.00 10.15 0.3878 0.3937 0.3996
E18.800.3465
e0.800.0315
F0.600.0236
ddd0.100.0039
eee0.150.0059
fff0.080.0031
Number of Pins
N144
1
Values in inches are converted from mm and
rounded to 4 decimal digits.
Dpad
Dsm
Dpad0.37 mm
Dsm
0.52 mm typ. (depends on solder
mask registration tolerance
Solder paste0.37 mm aperture diameter
– Non solder mask defined pads are recommended
The average chip-junction temperature, TJ, in degrees Celsius, may be calculated using the
following equation:
T
= TA + (PD x ΘJA)(1)
J
Where:
–T
–Θ
–P
–P
–P
Most of the time for the applications P
P
may be significant if the device is configured to drive continuously external modules
I/O
and/or memories.
is the ambient temperature in °C,
A
is the package junction-to-ambient thermal resistance, in °C/W,
JA
is the sum of P
D
is the product of I
INT
INT
and P
and VDD, expressed in Watts. This is the chip internal
DD
I/O (PD
= P
INT
+ P
I/O
),
power,
represents the power dissipation on input and output pins; user determined.
I/O
I/O< PINT
and may be neglected. On the other hand,
An approximate relationship between P
P
= K / (TJ + 273°C) (2)
D
and TJ (if P
D
is neglected) is given by:
I/O
Therefore (solving equations 1 and 2):
K = P
x (TA + 273°C) + ΘJA x P
D
2
(3)
D
Where:
–K is a constant for the particular part, which may be determined from equation (3)
by measuring P
of P
and TJ may be obtained by solving equations (1) and (2) iteratively for any
D
value of T
Table 28.Thermal characteristics
SymbolDescriptionPackageValue (typical)Unit
Θ
JA
A
Thermal resistance junction-ambient
(at equilibrium) for a known TA. Using this value of K, the values
D
LFBGA14450
TQFP10040
°C/WTQFP14440
48/52
Page 49
STR73xFxxOrder codes
6 Order codes
Table 29.Order codes
Partnumber
STR730FZ1T6128
STR730FZ2T6256
STR730FZ1H6128
STR730FZ2H6256
STR735FZ1T6128
STR735FZ2T6256
STR735FZ1H6128
STR735FZ2H6256
STR731FV0T664
STR731FV1T6128
STR731FV2T6256
STR736FV0T664
STR736FV2T6256
Flash
Kbytes
Package
TQFP144
20x20
LFBGA144
10x10
TQFP144
20x20
LFBGA144
10x10
TQFP100
14x14
TQFP100
14x14
RAM
Kbytes
16
TIM
timers
10
6
6x PWM
module
1
CAN
periph
3
0
3
0STR736FV1T6128
A/D
Wake-up
chan.
1632112
121872
lines
I/O
ports
Tem p.
range
-40 to
+85°C
STR730FZ1T7128
STR730FZ2T7256
STR730FZ1H7128
STR730FZ2H7256
STR735FZ1T7128
STR735FZ2T7256
STR735FZ1H7128
STR735FZ2H7256
STR731FV0T764
STR731FV1T7128
STR731FV2T7256
STR736FV0T764
STR736FV2T7256
TQFP144
20x20
LFBGA144
10x10
TQFP144
20x20
LFBGA144
10x10
TQFP100
14x14
TQFP100
14x14
16
10
3
1632112
0
1
3
6
0STR736FV1T7128
121872
-40 to
+105°C
49/52
Page 50
Known limitationsSTR73xFxx
7 Known limitations
7.1 Low power wait for interrupt mode
When the STR73x device is put in Low Power Wait For Interrupt mode (LPWFI), the Flash
goes into low power mode or power down mode, depending on the setting of the PWD bit in
the Flash Control Register 0 (default is ‘0’, Low Power mode). This default mode can create
excessive voltage conditions on the transistor gates and may affect the long term behavior
of the Low Power mode circuitry.
Workaround
There is no workaround. If Low Power Wait For Interrupt mode is used, it is strongly
suggested to configure the Flash to enter power down mode (bit PWD = ‘1’).
7.2 PLL free running mode at high temperature
When the STR73x device is operated and an ambient temperature (TA) of more than 55° C
and the main system clock (f
may not work properly.
) is sourced by the PLL in free running mode, the device
MCLK
Workaround
At high temperature (more than 55° C), it is recommended to use the internal RC oscillator
as a backup clock source rather than the PLL free running mode.
50/52
Page 51
STR73xFxxRevision history
8 Revision history
Table 30.Document revision history
DateRevisionDescription of changes
19-Sep-20051First release
02-Nov-20052
08-Mar-20063
04-Jun-20064
19-Jun-20065
08-Sep-20066
08-Jun-20087
Removed Table 8 power consumption in LP modes
Updated PLL frequency in Section 1.1 and Ta bl e 1 2
Section 3.4: Preliminary power consumption data updated
Section 3.5: DC electrical characteristics updated
Section 7: Known limitations added
Section 4: Electrical parameters updated
Section 7: Known limitations updated
Added temperature range -40°C to 85°C in Section 6: Order
codes
Changed Flash data retention to 20 years at 85°C in Table 18 on
page 34.
Changed Table 24: Output driving current on page 39
Added Figure 14: VOL standard ports vs IOL @ VDD 5 V thru
Figure 18: VOL P6.0 pin vs IOL @ VDD 5 V on page 40.
Added Figure 20: NRSTIN RPU vs. VDD
Inch values rounded to 4 decimal digits in Section 5.1: Package
mechanical data
Modified BSPI speed in Section 2.1: On-chip peripherals
51/52
Page 52
STR73xFxx
Please Read Carefully:
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