Datasheet STQ2LN60K3-AP Specification

STQ2LN60K3-AP

TO-92 ammopack

1

2

3

D(2)

G(1)

S(3)

AM01476v1

N-channel 600 V, 4 Ω typ., 0.6 A SuperMESH3™ Power MOSFET

in TO-92 package

Datasheet — production data

Features

R

Order code V

STQ2LN60K3-AP 600 V < 4.5 Ω 0.6 A 2.5 W

■ 100% avalanche tested

■ Extremely high dv/dt capability

■ Very low intrinsic capacitance

■ Improved diode reverse recovery

DSS

DS(on)

max

characteristics

■ Zener-protected

Applications

I

P

D

TOT

■ Switching applications

Figure 1. Internal schematic diagram

Description

This SuperMESH3™ Power MOSFET is the result of improvements applied to STMicroelectronics’ SuperMESH™ technology, combined with a new optimized vertical structure. This device boasts an extremely low onresistance, superior dynamic performance and high avalanche capability, rendering it suitable for the most demanding applications.

Table 1. Device summary

Order codes Marking Package Packaging

STQ2LN60K3-AP 2LN60K3 TO-92 Ammopack

July 2012 Doc ID 023499 Rev 1 1/14

This is information on a product in full production.

www.st.com

14

Contents STQ2LN60K3-AP

Contents

1 Electrical ratings . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 3

2 Electrical characteristics . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 4

2.1 Electrical characteristics (curves) . . . . . . . . . . . . . . . . . . . . . . . . . . 6

3 Test circuits . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 9

4 Package mechanical data . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 10

5 Revision history . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 13

2/14 Doc ID 023499 Rev 1

STQ2LN60K3-AP Electrical ratings

1 Electrical ratings

Table 2. Absolute maximum ratings

Symbol Parameter Value Unit

Drain-source voltage 600 V

DS

Gate- source voltage ± 30 V

GS

I

Drain current (continuous) at TC = 25 °C 0.6 A

D

I

Drain current (continuous) at TC = 100 °C 0.38 A

D

(1)

Drain current (pulsed) 2.4 A

Total dissipation at TC = 25 °C 2.5 W

TOT

I

DM

P

V

Derating factor 0.02 W/°C

V

ESD(G-S)

dv/dt

T

1. Pulse width limited by safe operating area

2. ISD ≤ 0.6 A, di/dt ≤ 400 A/µs, peak VDS < V

Table 3. Thermal data

Gate source ESD (HBM-C = 100 pF, R = 1.5 kΩ)

(2)

Peak diode recovery voltage slope 12 V/ns

Storage temperature -55 to 150 °C

stg

T

Max. operating junction temperature 150 °C

j

(BR)DSS

2500 V

Symbol Parameter Value Unit

R

thj-case

R

thj-amb

Thermal resistance junction-case max 50 °C/W

Thermal resistance junction-amb max 120 °C/W

Table 4. Avalanche characteristics

Symbol Parameter Max value Unit

I

E

Avalanche current, repetitive or not-repetitive

AR

(pulse width limited by T

max)

j

Single pulse avalanche energy

AS

(starting T

= 25 °C, ID = IAR, VDD = 50 V)

j

2A

80 mJ

Doc ID 023499 Rev 1 3/14

Electrical characteristics STQ2LN60K3-AP

2 Electrical characteristics

(TC = 25 °C unless otherwise specified)

Table 5. On /off states

Symbol Parameter Test conditions Min. Typ. Max. Unit

V

(BR)DSS

I

DSS

I

GSS

V

GS(th)

R

DS(on

Drain-source breakdown voltage

Zero gate voltage drain current (VGS = 0)

Gate-body leakage current (VDS = 0)

ID = 1 mA, VGS = 0 600 V

V

= 600 V

DS

V

= 600 V, TC=125 °C

DS

1

50µAµA

VGS = ± 20 V ± 10 µA

Gate threshold voltage VDS = VGS, ID = 50 µA 3 3.75 4.5 V

Static drain-source onresistance

VGS = 10 V, ID = 1 A 4 4.5 Ω

Table 6 . D yn am ic

Symbol Parameter Test conditions Min. Typ. Max. Unit

Input capacitance

iss

Output capacitance

oss

Reverse transfer

rss

capacitance

Eq. capacitance time

(1)

(2)

energy related

= 50 V, f = 1 MHz, VGS = 0 -

V

DS

= 0, VDS = 0 to 480 V

V

GS

235

22

-

3.5

-14-pF

-10-pF

C

o(tr)

o(er)

pF pF pF

R

Q

1. C

oss eq

when VDS increases from 0 to 80% V

2. C

oss eq

C

oss

Intrinsic gate

G

resistance

Total gate charge

g

Gate-source charge

gs

Gate-drain charge

gd

. time related is defined as a constant equivalent capacitance giving the same charging time as C

. energy related is defined as a constant equivalent capacitance giving the same stored energy as

when VDS increases from 0 to 80% V

f = 1 MHz open drain - 7 - Ω

VDD = 480 V, ID = 1 A, V

= 10 V

GS

(see Figure 1 6)

DSS

4/14 Doc ID 023499 Rev 1

12

-

1.8

7.7

nC

-

nC nC

oss

STQ2LN60K3-AP Electrical characteristics

Table 7. Switching times

Symbol Parameter Test conditions Min. Typ. Max. Unit

t

d(on)

t

d(off)

Turn-on delay time Rise time

t

r

Turn-off-delay time Fall time

t

f

VDD = 300 V, ID =1 A, R

= 4.7 Ω, V

G

GS

= 10 V

(see Figure 15)

10

8.5

-

23.5

-

21

Table 8. Source drain diode

Symbol Parameter Test conditions Min. Typ. Max. Unit

I

SDM

V

SD

Q

I

RRM

Q

I

RRM

1. Pulse width limited by safe operating area.

2. Pulsed: Pulse duration = 300 µs, duty cycle 1.5%

Source-drain current

SD

(1)

Source-drain current (pulsed)

(2)

Forward on voltage ISD = 2 A, VGS = 0 - 1.5 V

t

Reverse recovery time

rr

Reverse recovery charge

rr

Reverse recovery current

t

Reverse recovery time

rr

Reverse recovery charge

rr

Reverse recovery current

ISD = 2 A, di/dt = 100 A/µs V

DD

ISD = 2 A, di/dt = 100 A/µs V

DD

(see Figure 20)

= 60 V (see Figure 20)

= 60 V, Tj = 150 °C

-

200

-

800

230

-

950

0.6

2.4AA

8

8.5

ns ns ns ns

ns

nC

A

ns

nC

A

Table 9. Gate-source Zener diode

Symbol Parameter Test conditions Min. Typ. Max. Unit

Gate-source breakdown

(1)

BV

GSO

1. The built-in back-to-back Zener diodes have specifically been designed to enhance not only the device’s ESD capability, but also to make them safely absorb possible voltage transients that may occasionally be applied from gate to source. In this respect the Zener voltage is appropriate to achieve an efficient and cost-effective intervention to protect the device’s integrity. These integrated Zener diodes thus avoid the usage of external components.

voltage

Igs= ± 1 mA (open drain) 30 - V

Doc ID 023499 Rev 1 5/14

Electrical characteristics STQ2LN60K3-AP

I

D

1

0.1

0.01

0.1

1

100

V

DS

(V)

10

(A)

Operation in this area is

Limited by max R

DS(on)

10µs

100µs 1ms

10ms

Tj=150°C Tc=25°C Single pulse

10

0.001

AM13065v1

I

D

1.5

1.0

0.5

0

4

V

DS

(V)

8

(A)

2

6

2.0

5V

6V

V

GS

=10V

AM13054v1

V

GS

6

4

2

0

5

Q

g

(nC)

(V)

8

10

V

DD

=480V

I

D

=2A

12

300

200

100

0

400

500

V

DS

V

DS

(V)

AM13056v1

2.1 Electrical characteristics (curves)

Figure 2. Safe operating area Figure 3. Thermal impedance

Figure 4. Output characteristics Figure 5. Transfer characteristics

I

(A)

2.5

D

DS

=15V

V

AM13055v1

2.0

1.5

1.0

0.5

0

Figure 6. Gate charge vs gate-source voltage Figure 7. Static drain-source on-resistance

R

DS(on)

(Ω)

2

4

V

GS

=10V

8

V

6

GS

AM13057v1

4.2

4.0

3.8

3.6

3.4

3.2

3.0

1.0

0.4

0.6

0.2

0

0.8

1.2

I

D

(A)

6/14 Doc ID 023499 Rev 1

(V)

STQ2LN60K3-AP Electrical characteristics

C

100

10

1

0.1

10

V

DS

(V)

(pF)

1

100

Ciss

Coss

Crss

AM13058v1

V

GS(th)

1.00

0.90

0.80

0.70

-75

T

J

(°C)

(norm)

-25

1.10

75

25

125

I

D

=50µA

AM13060v1

BV

DSS

-75

T

J

(°C)

(norm)

-25

75

25

125

0.90

0.95

1.00

1.05

1.10

I

D

=1mA

AM13062v1

Figure 8. Capacitance variations Figure 9. Output capacitance stored energy

E

(µJ)

oss

1.5

1

0.5

AM13059v1

Figure 10. Normalized gate threshold voltage

Figure 12. Normalized BV

vs temperature

vs temperature Figure 13. Source-drain diode forward

DSS

Doc ID 023499 Rev 1 7/14

0

100

200

300

400

500

600

Figure 11. Normalized on-resistance vs

temperature

R

DS(on)

(norm)

I

D

V

=1.1A

GS

=10V

2.5

2.0

1.5

1.0

0.5

0

-75

-25

25

75

125

characteristics

(V)

V

SD

0.9

0.8

0.7

0.6

0.5

0.4

0.3

0.2

0.1

0

J

=-50°C

T

J

T

J

=150°C

T

1

3

2

4

I

SD

5

V

DS

AM13061v1

T

J

(°C)

AM13063v1

=25°C

(A)

(V)

Electrical characteristics STQ2LN60K3-AP

E

AS

0

40

T

J

(°C)

(mJ)

20

100

60

80

0

10

20

30

40

120

140

ID=2 A

V

DD

=50 V

50

60

70

80

90

AM13064v1

Figure 14. Maximum avalanche energy vs

temperature

8/14 Doc ID 023499 Rev 1

STQ2LN60K3-AP Test circuits

AM01468v1

VGS

PW

VD

RG

RL

D.U.T.

2200

μF

3.3 μF

V

DD

AM01469v1

VDD

47kΩ

1kΩ

47kΩ

2.7kΩ

1kΩ

12V

V

i=20V=VGMAX

2200 μF

PW

IG=CONST

100Ω

100nF

D.U.T.

V

G

AM01470v1

A

D

D.U. T.

S

B

G

25

Ω

A

B

R

G

FAST DIODE

D

S

L=100μH

μF

3.3

1000

μF

V

DD

AM01472v1

V(BR)DSS

VDD

VD

IDM

ID

3 Test circuits

Figure 15. Switching times test circuit for

resistive load

Figure 17. Test circuit for inductive load

switching and diode recovery times

Figure 16. Gate charge test circuit

Figure 18. Unclamped Inductive load test

circuit

L

VD

2200

μF

3.3 μF

VDD

ID

Vi

D.U. T.

Pw

Figure 19. Unclamped inductive waveform Figure 20. Switching time waveform

0

Doc ID 023499 Rev 1 9/14

10%

tdon

ton

90%

tr

10%

V

GS

VDS

90%

tdoff

AM01471v1

toff

tf

90%

10%

AM01473v1

Package mechanical data STQ2LN60K3-AP

4 Package mechanical data

In order to meet environmental requirements, ST offers these devices in different grades of ECOPACK specifications, grade definitions and product status are available at: www.st.com. ECOPACK is an ST trademark.

®

packages, depending on their level of environmental compliance. ECOPACK®

10/14 Doc ID 023499 Rev 1

STQ2LN60K3-AP Package mechanical data

Table 10. TO-92 ammopack mechanical data

mm

Dim.

Min. Typ. Max.

A1 4.80

T 3.80

T1 1.60

T2 2.30

d 0.45 0.47 0.48

P0 12.50 12.70 12.90

P2 5.65 6.35 7.05

F1, F2 2.40 2.50 2.94

F3 4.98 5.08 5.48

delta H -2.00 2.00

W 17.50 18.00 19.00

W0 5.50 6.00 6.50

W1 8.50 9.00 9.25

W2 0.50

H 18.50 21.00

H0 15.50 16.00 18.20

H1 25.00 27.00

H3 0.50 1.00 2.00

D0 3.80 4.00 4.20

t 0.90

L 11.00

l1 3.00

delta P -1.00 1.00

Doc ID 023499 Rev 1 11/14

Package mechanical data STQ2LN60K3-AP

A

D0

H1

H0

l1

F1 F2

P2

P0

delta H

T2

T1

F3

H3

0050910S_Rev_U

Figure 21. TO-92 ammopack drawing

T

1

H

L

d

W2

W0

W

W1

t

12/14 Doc ID 023499 Rev 1

STQ2LN60K3-AP Revision history

5 Revision history

Table 11. Document revision history

Date Revision Changes

19-Jul-2012 1 First release.

Doc ID 023499 Rev 1 13/14

STQ2LN60K3-AP

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14/14 Doc ID 023499 Rev 1

Datasheet STQ2LN60K3-AP Specification

Specifications and Main Features

Frequently Asked Questions

User Manual

Figure 1. Internal schematic diagram

Table 1. Device summary

1 Electrical ratings

Table 2. Absolute maximum ratings

Table 3. Thermal data

Table 4. Avalanche characteristics

2 Electrical characteristics

Table 5. On /off states

Table 6 . D yn am ic

Table 7. Switching times

Table 8. Source drain diode

Table 9. Gate-source Zener diode

2.1 Electrical characteristics (curves)

3 Test circuits

Figure 16. Gate charge test circuit

Figure 19. Unclamped inductive waveform Figure 20. Switching time waveform

4 Package mechanical data

Table 10. TO-92 ammopack mechanical data

Figure 21. TO-92 ammopack drawing

5 Revision history

Table 11. Document revision history