Datasheet STQ-2016 Datasheet (Stanford Microdevices)

Product Description

The Stanford Microdevices’ STQ-2016 is a direct quadra­ture modulator targeted for use in a wide range of commu­nications systems. This device features a wide 800-2500
MHz operating frequency band, excellent carrier and side­band suppression, and a low broadband noise floor.

The STQ-2016 uses silicon germanium device technology
and delivers a typical output power of -10dBm with greater
than 60dB IM3 suppression. A shutdown feature is
included that, when enabled, attenuates the output by
60dB.

Functional Block Diagram

BBQP

VCC

VEE

LOP

LON

VEE

BBIP

1

2

3

4

5

6

7

8

LO

QUADRATURE

GENERATOR

16

BBQN

15

VCC

14

VEE

13

RFP

12

RFN

11

VEE

10

VCCSD

9

BBIN

Advanced Data Sheet

STQ-2016

800 - 2500 MHz
Direct Quadrature Modulator

16 pin TSSOP with Exposed Pad

Package Body: 0.20 x 0.17 x 0.04 (inches)

5.0 x 4.4 x 1.0 (mm)

Product Features

• 800-2500 MHz operating frequency

• No external IF filter

• Very low noise floor performance

• Excellent carrier and sideband suppression

• Low LO drive requirements

• Shut-down feature

• Single 5 volt supply

• Supports wideband baseband input

Applications

• Digital communication system

• Spread spectrum communication systems

• Cellular/PCS/DCS/3G transceivers

• ISM band transceivers

• GMSK, QPSK, QAM, SSB modulators

Key Specifications

Parameters Test Conditions (Vs=5.0V, I=73mA, T=25ºC) Unit Min. Typ. Max.

Frequency Range MHz 800 2500
Output P1dB f
Carrier Feedthrough f
Sideband Suppression f

Broadband Noise Floor
LO Drive Level dBm-8-5-2

See page 2 for general test conditions

The information provided herein is believed to be reliable at press time. Stanford Microdevices assumes no responsibility for inaccuracies or ommisions.
Stanford Microdevices assumes no responsibility for the use of this information, and all such information shall be entirely at the user’s own risk. Prices and specifications are subject to change without
notice. No patent rights or licenses to any of the c ircuits described herein are implied or granted to any third party. S tanford Mi crodevices does no t authorize or warrant any Stanford M icrodevices
product for use in life-support devices and/or systems.
Copyright 2000 Stanford Microdevices, Inc. All worldwide rights reserved.

522 Almanor Ave., Sunnyvale, CA 94086 Phone: (800) SMI-MMIC http://www.stanfordmicro.com

= 2000 MHz dBm +3

LO

= 2000 MHz dBm -40

LO

= 2000 MHz dB 40

LO

= 2000 MHz, baseband inputs tied to 1.9VDC, -20MHz

f

LO

offset from carrier

1 06/25/01 rev 10.0

dBm/Hz -154

Advanced Data Sheet

Absolute Maximum Ratings

Parameters Value Unit

Supply Voltage 6.0 V
LO, RF Input +10 dBm
Min Input Voltage (BBIP, BBIN, BBQP, BBQN) 0 V
Max Input Voltage (BBIP, BBIN, BBQP, BBQN) 3 V
Operating Temperature -40 to +85 ºC
Storage Temperature -65 to +150 ºC

Product Specifications – RF Output

Parameters Additional Test Conditions Unit Min. Typ. Max.

Frequency Range MHz 800 2500
Output Power dBm -11.5
RF Port Return Loss matched to 50 ohm ref dB 14
Output P1dB dBm +3
Carrier Feedthrough dBm -40
Sideband Suppression dB 40
IM3 Suppression two-tone baseband input @ 600mVp-p differential per tone dB 65
Broadband Noise Floor baseband inputs tied to 1.9V
Quadrature Phase Error deg -2 +2
I/Q Amplitude Balance dB -0.2 +0.2

Product Specifications - Modulation Input

Parameters Additional Test Conditions Unit Min. Typ. Max.

Baseband Frequency Input -3dB bandwidth, baseband inputs terminated in 50 ohms MHz DC 1000
Baseband Input Resistance per pin kohms 4.4
Baseband Input Capacitance per pin pF 0.5

Product Specifications - LO Input

Parameters Additional Test Conditions Unit Min. Typ. Max.

Usable LO Fr equency MHz 800 2500
LO Drive Level dBm-8-5-2
LO Port Return Loss matched to 50 ohm ref dB 14

674'LUHFW4XDGUDWXUH0RGXODWRU

T est Conditi ons

V

DC

DC
DC

, -20MHz offset from carrier dBm/Hz -154

DC

S

TA +25ºC

Baseband
Inputs

LO Input -5dBm @ 2000 MHz

+5V

1.9V DC bias, 200kHz fre­quency, 300mVp-p per pin =
600mVp-p differential drive, I
and Q signals in quadrature

Product Specifications – Miscellaneous

Parameters Additional Test Conditions Unit Min. Typ. Max.

Shut-Down Attenuation dB 60
Shut-Down Pin Resistance @ 1MHz kohm 11.9
Shut-Down Pin Capacitance @ 1MHz pF 5.2
Shut-Down Input Thresh olds — CMOS
Shut-Down Settling Time ns <500
Supply Voltage V +4.75 +5 +5.25
Supply Current mA 73
Device Thermal Resistance junction-case ºC/W TBD

The information provided herein is believed to be reliable at press time. Stanford Microdevices assumes no responsibility for inaccuracies or ommisions.
Stanford Microdevices assumes no responsibility for the use of this information, and all such information shall be entirely at the user’s own risk. Prices and specifications are subject to change without
notice. No patent rights or licenses to any of the circuits described herein are implied or granted to any third party. Stanford Microdevices does not authorize or warrant any Stanford Microdevices
product for use in life-support devices and/or systems.
Copyright 2000 Stanford Microdevices, Inc. All worldwide rights reserved.

522 Almanor Ave., Sunnyvale, CA 94086 Phone: (800) SMI-MMIC http://www.stanfordmicro.com

2 06/25/01 rev 10.0

674'LUHFW4XDGUDWXUH0RGXODWRU

Fig. 5 Intermodulation Dis tortion vs. SSB Output

.0

Typical Device Performance

Advanced Data Sheet

Fig. 1 SSB Powe r vs . LO Frequency

-5

-6

-7

-8

-9

-10

-11

-12

SSB Power (dBm)

-13

-14

-15
800 1000 1200 1400 1600 1800 2000 2200 2400

LO Frequency (MHz)

Fig.3 Carri er Feedt hr ough vs. LO Frequency

-30

-32

-34

-36

-38

-40

-42

-44

-46

-48

Carrier Feedthrough (dBm)

-50
800 1000 1200 1400 1600 1800 2000 2200 2400

LO Frequency (MHz)

Fig.2 O ut put P1dB vs. LO Fr equency

10

9
8
7
6
5
4
3
2

Output P1dB (dBm)

1
0

800 1000 1200 1400 1600 1800 2000 2200 2400

LO Frequency (MHz)

Fig. 4 Sideband Suppress i o n vs . LO Frequenc y

50
48
46
44
42
40
38
36
34
32

Sideband Suppression (dB)

30

800 1000 1200 1400 1600 1800 2000 2200 2400

LO Frequency (MHz)

The information provided herein is believed to be reliable at press time. Stanford Microdevices assumes no responsibility for inaccuracies or ommisions.
Stanford Microdevices assumes no responsibility for the use of this information, and all such information shall be entirely at the user’s own risk. Prices and specifications are subject to change without
notice. No patent rights or licenses to any of the circuits described herein are implied or granted to any third party. Stanford Microdevices does not authorize or warrant any Stanford Microdevices
product for use in life-support devices and/or systems.
Copyright 2000 Stanford Microdevices, Inc. All worldwide rights reserved.

522 Almanor Ave., Sunnyvale, CA 94086 Phone: (800) SMI-MMIC http://www.stanfordmicro.com

Power

0

-10

-20

-30

-40

-50

-60

-70

Output Power (dBm)

-80

-90

-100

fundamental (each tone)
3rd intermod. (each tone)

-12.0 -10.0 -8.0 -6.0 -4.0 -2.0 0.0 2.0 4.0 6

BB input level (dBVp-p diff.)

3 06/25/01 rev 10.0

674'LUHFW4XDGUDWXUH0RGXODWRU

Small Signal S-Parameters

Advanced Data Sheet

RF Port

Frequency

(MHz)

800 0.364 162.7 0.125 89.26

900 0.366 160.3 0.141 86.34
1000 0.368 157.9 0.156 83.74
1100 0.370 155.6 0.171 81.38
1200 0.372 153.3 0.186 79.2
1300 0.374 151.1 0.200 77.18
1400 0.377 148.8 0.214 75.27
1500 0.380 146.6 0.227 73.48
1600 0.383 144.4 0.240 71.77
1700 0.387 142.2 0.253 70.15
1800 0.391 139.9 0.265 68.6
1900 0.395 137.6 0.277 67.12
2000 0.398 135.2 0.289 65.71
2100 0.402 132.7 0.301 64.35
2200 0.404 130.3 0.312 63.04
2300 0.406 128.0 0.322 61.79
2400 0.407 125.7 0.333 60.58
2500 0.408 123.6 0.343 59.41

Single-Ended Differential

Mag. Ang. Mag. Ang.

LO Port

Frequency

(MHz)

800 0.948 -29.69 0.106 81.92

900 0.940 -33.43 0.119 80.9
1000 0.931 -37.18 0.132 79.89
1100 0.921 -40.95 0.145 78.88
1200 0.910 -44.75 0.158 77.87
1300 0.898 -48.56 0.171 76.87
1400 0.886 -52.39 0.184 75.86
1500 0.873 -56.25 0.197 74.85
1600 0.859 -60.13 0.210 73.85
1700 0.845 -64.03 0.223 72.84
1800 0.830 -67.96 0.236 71.84
1900 0.814 -71.89 0.248 70.84
2000 0.798 -75.84 0.261 69.84
2100 0.781 -79.79 0.273 68.84
2200 0.765 -83.77 0.286 67.84
2300 0.748 -87.78 0.298 66.85
2400 0.732 -91.83 0.310 65.86
2500 0.716 -95.94 0.322 64.86

Single-Ended Differential

Mag. Ang. Mag. Ang.

Notes:

1. VCC = +5.0V, T = +25ºC.

2. For single-ended S-parameters, the corresponding differential pin is left floating.

3. Data is referenced to the foot of the package lead and does not include the applications circuit.

4. All data simulated.

The information provided herein is believed to be reliable at press time. Stanford Microdevices assumes no responsibility for inaccuracies or ommisions.
Stanford Microdevices assumes no responsibility for the use of this information, and all such information shall be entirely at the user’s own risk. Prices and specifications are subject to change without
notice. No patent rights or licenses to any of the circuits described herein are implied or granted to any third party. Stanford Microdevices does not authorize or warrant any Stanford Microdevices
product for use in life-support devices and/or systems.
Copyright 2000 Stanford Microdevices, Inc. All worldwide rights reserved.

522 Almanor Ave., Sunnyvale, CA 94086 Phone: (800) SMI-MMIC http://www.stanfordmicro.com

4 06/25/01 rev 10.0

Advanced Data Sheet

674'LUHFW4XDGUDWXUH0RGXODWRU

Pin Out Description

Pin # Function Description Additional Comments

1 BBQP Q-channel baseband input, positive terminal Nominal DC bias voltage is 1.9V (biased internally)
2 VCC Positive supply (+5V)
3 VEE Ground
4 LOP Local oscillator input, positive terminal Nominal DC voltage is 2.0V. Input should be AC-coupled.
5 LON Local oscillator input, negative terminal Nominal DC voltage is 2.0V. Input should be AC-coupled.
6 VEE Ground

7 SD Shut-down control
8 BBIP I-channel baseband input, positive terminal Nominal DC bias voltage is 1.9V (biased internally)

9 BBIN I-channel baseband input, negative terminal Nominal DC bias voltage is 1.9V (biased internally)
10 VCC Positive supply (+5V)
11 VEE Ground
12 RFN RF output, negative terminal Nominal DC voltage is 2.4V. Output should be AC-coupled.
13 RFP RF output, positive terminal Nominal DC voltage is 2.4V. Output should be AC-coupled.
14 VEE Ground
15 VCC Positive supply (+5V)
16 BBQN Q-channel baseband input, negative terminal Nominal DC bias voltage is 1.9V (biased internally)

CMOS logic levels. Logic high = normal operation;
logic low = shut-down enabled.

The information provided herein is believed to be reliable at press time. Stanford Microdevices assumes no responsibility for inaccuracies or ommisions.
Stanford Microdevices assumes no responsibility for the use of this information, and all such information shall be entirely at the user’s own risk. Prices and specifications are subject to change without
notice. No patent rights or licenses to any of the circuits described herein are implied or granted to any third party. Stanford Microdevices does not authorize or warrant any Stanford Microdevices
product for use in life-support devices and/or systems.
Copyright 2000 Stanford Microdevices, Inc. All worldwide rights reserved.

522 Almanor Ave., Sunnyvale, CA 94086 Phone: (800) SMI-MMIC http://www.stanfordmicro.com

5 06/25/01 rev 10.0

Caution: ESD Sensitive

Appropriate precaution in handling, packaging
and testing devices must be observed.

Package Dimensions

Advanced Data Sheet

674'LUHFW4XDGUDWXUH0RGXODWRU

Part Number Ordering Information

Part Number Reel Size Devices/Reel

STQ-2016 TBD TBD

Part Symbolization

The part will be symbolized with a “TBD” marking
designator on the top surface of the package.

NOTE

1. PACKAGE BODY SIZES EXCLUDE MOLD FLASH
PROTRUSIONS OR GATE BURRS

2. TOLERANCE ±0.1 mm UNLESS OTHERWISE SPECIFIED

3. COPLANARITY : 0.1 mm

4. CONTROLLING DIMENSION IS MILLIMETER. CONVERTED
INCH DIMENSIONS ARE NOT NECESSARILY EXACT.

5. FOLLOWED FROM JEDEC MO-153

0.30

0.35

12°(4X)

1.25

SYMBOLS

A −−−

A2

b

θ

C
D

D1 2.80 0.110

E
E1

E2 2.80 0.110

e

L

y
θ 0°

Test PCB Pad Layout

3.0

0.62

0.62

3.0

φ0.25 via

DIMENSIONS IN MILLIMETERS

MIN

0.00A1

0.80

0.19

0.09

4.90

−−− −−− −−− −−−

−−−

4.30

−−− −−− −−− −−−

−−−

−−−

0.9

NOM

−−− 0.10

1.00

−−−

−−−

5.00

6.40

4.40

0.65

−−−

0.7

MAX

1.15−−−

1.05

0.30

0.20

5.10

−−−

4.50

−−−

0.10−−−
8°

DIMENSIONS IN IN CHES

MIN

−−−

0.000

0.031

0.007

0.004

0.193

−−−

0.169

−−−

0.018

−−−

0°

NOM

−−− 0.045

0.039

−−−

−−−

0.197

0.252

0.173

0.026

−−−

−−− 8°

MAX

0.004−−−

0.041

0.012

0.008

0.201

−−−

0.177

−−−

0.0300.0240.60 0.750.45

0.004

6.9

- Indicates metalization - vias connect pad to underlying ground plane

The information provided herein is believed to be reliable at press time. Stanford Microdevices assumes no responsibility for inaccuracies or ommisions.
Stanford Microdevices assumes no responsibility for the use of this information, and all such information shall be entirely at the user’s own risk. Prices and specifications are subject to change without
notice. No patent rights or licenses to any of the circuits described herein are implied or granted to any third party. Stanford Microdevices does not authorize or warrant any Stanford Microdevices
product for use in life-support devices and/or systems.
Copyright 2000 Stanford Microdevices, Inc. All worldwide rights reserved.

522 Almanor Ave., Sunnyvale, CA 94086 Phone: (800) SMI-MMIC http://www.stanfordmicro.com

all units are in mm

6 06/25/01 rev 10.0

Demo Test Board Schematic

+5V H1

L1

VCC

1
2

Advanced Data Sheet

674'LUHFW4XDGUDWXUH0RGXODWRU

P8

P9

P10

C3

C6

LOin

T3

8

C1

1

H2

1

SH1

2

C4

5

4

C5

C17

R8

VCC

VCC

R1

P14

STQ-2016

1

BBQP

P12

VCC
VEE
LOP
LON
VEE
SD
BBIP

BBQN

2
3

4
5
6
7
8

VCC
VEE

RFP

RFN

VEE

BBIN

R7

VCC

C9

16
15
14
13
12
11
10

9

VCC

R10R9

P13

C18

C10

C16

1

4

T4

5

RFout

8

C2

P11

Bill of Materials (for evaluation at 2GHz)

Component
Designator

P14 1 SMDI STQ-2016 SiGe Direct Quadrature Modulator

P8, P9, P10,

P11, P12, P13

H1, H2 2 AMP 640453-2 2-pin header, right angle

T3, T4 1:1 2 Panasonic EHF-FD1619 RF transformer, 1200-2200MHz

L1 1uH 1 Panasonic ELJ-FA1R0KF2 Inductor, 1210 footprint, ±10% tolerance

R1, R7, R9, R10 200 ohm 4 Venkel CR1206-8W-2000T Resistor, 1206 footprint, ±1% tolerance

R8 1 kohm 1 Venkel CR0603-16W-1001FT Resistor, 0603 footprint, ±1% tolerance

C1, C2 0.5pF 2 Venkel C0603COG500-0R5CNE Capacitor, 0503 footprint ±0.25pF tolerance
C6, C18 6.8pF 2 Venkel C0603COG500-6R8CNE Capacitor, 0603 footprint, COG dielectric, ±5% tolerance
C9, C17 1nF 2 Venkel C0603COG500-102JNE Capacitor, 0603 footprint, COG dielectric, ±5% tolerance

C3 2.2uF 1 Venkel C1206Y5V160-225ZNE Capacitor, 1206 footprint, Y5V dielectric, 16V rating

C4, C5, C10,

C16
SH1 1 3M 929950-00 Shunt for 2-pin header

The information provided herein is believed to be reliable at press time. Stanford Microdevices assumes no responsibility for inaccuracies or ommisions.
Stanford Microdevices assumes no responsibility for the use of this information, and all such information shall be entirely at the user’s own risk. Prices and specifications are subject to change without
notice. No patent rights or licenses to any of the circuits described herein are implied or granted to any third party. Stanford Microdevices does not authorize or warrant any Stanford Microdevices
product for use in life-support devices and/or systems.
Copyright 2000 Stanford Microdevices, Inc. All worldwide rights reserved.

522 Almanor Ave., Sunnyvale, CA 94086 Phone: (800) SMI-MMIC http://www.stanfordmicro.com

Value Qty Vendor Part Number Description

Johnson

6

Components

2.2pF 4 Venkel C0603COG500-2R2CNE

142-0701-851 SMA connector, end launch with tab, for .062” thick board

Capacitor, 0603 footprint, COG dielectric, ±0.25pF toler­ance

7 06/25/01 rev 10.0

Demo Te st Board

(Fully Assembled PCB)

P8

1
2

H1

Advanced Data Sheet

674'LUHFW4XDGUDWXUH0RGXODWRU

2"

P9

SH1

C3

L1

T3

C1

H2

1
2

P12

R8

C6

C4

C5
C17

R1

R9

P14

R7

R10

C10

C16
C18

C9

T4

C2

P13

P11

2"

P10

Note: Remove SH1 to enable modulated output.

The information provided herein is believed to be reliable at press time. Stanford Microdevices assumes no responsibility for inaccuracies or ommisions.
Stanford Microdevices assumes no responsibility for the use of this information, and all such information shall be entirely at the user’s own risk. Prices and specifications are subject to change without
notice. No patent rights or licenses to any of the circuits described herein are implied or granted to any third party. Stanford Microdevices does not authorize or warrant any Stanford Microdevices
product for use in life-support devices and/or systems.
Copyright 2000 Stanford Microdevices, Inc. All worldwide rights reserved.

522 Almanor Ave., Sunnyvale, CA 94086 Phone: (800) SMI-MMIC http://www.stanfordmicro.com

8 06/25/01 rev 10.0