Datasheet STQ1NC45 Datasheet (STMicroelectronics)

STD2NC45-1

STQ1NC45

N-CHANNEL 450V - 4.1Ω - 1 .5 A IPAK / TO-92

SuperMESH™Power MOSFET

TYPE V

STD2NC45-1
STQ1NC45

■ TYPICAL R

■ EXTREMELY HIGHdv/dt CAPABILITY

■ 100% AVALANCHE TESTED

■ GATE CHARGE MINIMIZED

■ NEW HIGH VOLTAGE BENCHMARK

450 V
450 V

(on) = 4.1 Ω

DS

DSS

R

DS(on)

< 4.5 Ω
< 4.5 Ω

I

D

1.5 A

0.5 A

Pw

30 W

3.1 W

DESCRIPTION

The SuperMESH™ series is obtained through an
extreme optimization of ST’s we ll established strip­based PowerMESH™ layout. In addition to pushing
on-resistance significantly down, special careis tak­en to ensure a very good dv/dt capability for the
most demanding applications. Such series comple­ments ST full range of high voltage MOSFETs in­cluding revolutionary MDm es h™ products.

APPLICATIONS

■ SWITCH MODE LOW POWER SUPPLIES

(SMPS)

■ LOW POWER, LOW COST CFL (COMPACT

FLUORESCENT LAMPS)

■ LOW POWER BATTERY CHARGERS

3

2

1

IPAK

TO-92

TO-92 (Ammopack)

INTERNAL SCHEMATIC DIAGRAM

ORDERING INFORMATION

SALES TYPE MARKING PACKAGE PACKAGING

STD2NC45-1 D2NC45 IPAK TUBE

STQ1NC45 Q1NC45 TO-92 BULK

STQ1NC45-AP Q1NC45 TO-92 AMMOPAK

1/11June 2003

STD2NC45-1, STQ1NC45

ABSOLUTE MAXIMUM RATINGS

Symbol Parameter Value Unit

STD2NC45-1 STQ1NC45

V

DS

V

DGR

V

GS

I

D

I

D

IDM()

P

TOT

dv/dt (1) Peak Diode Recovery voltage slope 3 V/ns

T

j

T

stg

() Pulse width limited by safe operating area
(1) I

≤0.5A, di/dt ≤100A/µs, VDD≤ V

SD

THERMAL DATA

Rthj-case Thermal Resistance Junction-case Max 4.1 °C/W
Rthj-amb Thermal Resistance Junction-ambient Max 100 120 °C/W
Rthj-lead Thermal Resistance Junction-lead Max 40 °C/W

T

l

Drain-source Voltage (VGS=0)
Drain-gate Voltage (RGS=20kΩ)

450 V

450 V
Gate- source Voltage ± 30 V
Drain Current (continuos) at TC= 25°C
Drain Current (continuos) at TC= 100°C

1.5 0.5 A

0.95 0.315 A
Drain Current (pulsed) 6 2 A
Total Dissipation at TC= 25°C

30 3.1 W

Derating Factor 0.24 0.025 W/°C

Operating Junction Temperature
Storage Temperature

(BR)DSS,Tj≤TJMAX.

-65 to 150

-65 to 150

IPAK TO-92

Maximum Lead Temperature For Soldering

275 260 °C

Purpose

°C
°C

AVALANCHE CHARACTERISTICS

Symbol Parameter Max Value Unit

IPAK TO-92

1.5 A

25 mJ

2/11

I

AR

E

AS

Avalanche Current, Repetitive or Not-Repetitive
(pulse width limited by T

max)

j

Single Pulse Avalanche Energy
(starting T

= 25 °C, ID=IAR,VDD=50V)

j

STD2NC45-1, STQ1NC45

ELECTRICAL CHARACTERISTICS (TCASE =25°C UNLESS OT HERWISE SPECIFIED)

ON/OFF

Symbol Parameter Test Conditions Min. Typ. Max. Unit

V

(BR)DSS

Drain-source
Breakdown Voltage

I

DSS

I

GSS

V

GS(th)

R

DS(on)

Zero Gate Voltage
Drain Current (V

GS

=0)

Gate-body Leakage
Current (V

DS

=0)
Gate Threshold Voltage
Static Drain-source On

Resistance

DYNAMIC

Symbol Parameter Test Conditions Min. Typ. Max. Unit

(1) Forward Transconductance VDS>I

g

fs

C

iss

C

oss

C

rss

Input Capacitance
Output Capacitance
Reverse Transfer
Capacitance

ID= 250 µA, VGS= 0 450 V

V

= Max Rating

DS

VDS= Max Rating, TC= 125 °C
V

= ± 30V ±100 nA

GS

V

DS=VGS,ID

= 250µA

2.3 3 3.7 V

1

50

VGS=10V,ID= 0.5 A 4.1 4.5 Ω

D(on)xRDS(on)max,

1.1 S

ID= 0.5 A

=25V,f=1MHz,VGS=0

V

DS

160

27.5

4.7

µA
µA

pF
pF
pF

SWITCHING ON

Symbol Parameter Test Conditions Min. Typ. Max. Unit

t

d(on)

Turn-on Delay Time

t

r

Rise Time

VDD=225V,ID= 0.5 A
R

= 4.7Ω VGS=10V

G

6.7
4

(Resistive Load see, Figure 3)

Q

g

Q

gs

Q

gd

Total Gate Charge
Gate-Source Charge
Gate-Drain Charge

=360V,ID= 1.5 A,

V

DD

VGS=10V,RG= 4.7Ω

7

1.3

3.2

10

SWITCHING OFF

Symbol Parameter Test Conditions Min. Typ. Max. Unit

= 360V, ID= 1.5 A,

t

r(Voff)

t

t

Off-voltage Rise Time

f

c

Fall Time
Cross-over Time

V

DD

R

=4.7Ω, VGS= 10V

G

(Inductive Load see, Figure 5)

8.5

12
18

SOURCE DRAIN DIODE

Symbol Parameter Test Conditions Min. Typ. Max. Unit

I

SD

I

SDM

V

SD

t

rr

Q

rr

I

RRM

Note: 1. Pulsed: Pulse duration = 300 µs, duty cycle 1.5 %.

2. Pulse width limited by safe operating area.

Source-drain Current

(2)

Source-drain Current (pulsed)

(1)

Forward On Voltage
Reverse Recovery Time

Reverse Recovery Charge
Reverse Recovery Current

ISD= 1.5 A, VGS=0
I

SD

VDD=100V,Tj=150°C
(see test circuit, Figure 5)

= 1.5 A, di/dt = 100A/µs

225
530

4.7

1.5

6.0

1.6 V

ns
ns

nC
nC
nC

ns
ns
ns

A
A

ns

µC

A

3/11

STD2NC45-1, STQ1NC45

Safe Operating Area For IPAK

Thermal Imped ance For IPAK

Thermal Impedance For TO-92Safe Operating Area For TO-92

Output Characteristics

4/11

Transfer Characteristics

STD2NC45-1, STQ1NC45

Transconductance Static Drain-source On Resistance

Gate Charge vs Gate-so urce V oltage

Normalized Gate Threshold Voltage v s Temp. Normalized On Resi stance vs Temper ature

Capacitance Variations

5/11

STD2NC45-1, STQ1NC45

Source-drain Diode Forward Characteristics

Max Id Current vs Tc

Normalized BVDSS vs Temperature

Maximum Avalanche Energy vs Temperature

6/11

STD2NC45-1, STQ1NC45

Fig. 2: Unclamped Inductive WaveformFig. 1: Unclamped Inductive Load Test Circuit

Fig. 3: Switching Times Test Circuit For

Resistive Load

Fig. 5: Test Circuit For Induct ive Load Switching
And Diode Recovery Times

Fig. 4: Gate Charge tes t Circuit

7/11

STD2NC45-1, STQ1NC45

TO-251 (IPAK) MECHANI CAL DAT A

DIM.

MIN. TYP. MAX. MIN. TYP. MAX.

mm inch

A 2.2 2.4 0.086 0.094
A1 0.9 1.1 0.035 0.043
A3 0.7 1.3 0.027 0.051

B 0.64 0.9 0.025 0.031
B2 5.2 5.4 0.204 0.212
B3 0.85 0.033
B5 0.3 0.012
B6 0.95 0.037

C 0.45 0.6 0.017 0.023
C2 0.48 0.6 0.019 0.023

D 6 6.2 0.236 0.244

E 6.4 6.6 0.252 0.260

G 4.4 4.6 0.173 0.181

H 15.9 16.3 0.626 0.641

L 9 9.4 0.354 0.370
L1 0.8 1.2 0.031 0.047
L2 0.8 1 0.031 0.039

H

8/11

A

C2

L2

E

B2

= =

= =

D

B3

2

1 3

L1

A1

L

B6

C

A3

B

B5

G

= =

0068771-E

TO-92 MECHANICAL DATA

STD2NC45-1, STQ1NC45

DIM.

A 4.32 4.95 0.170 0.194
b 0.36 0.51 0.014 0.020
D 4.45 4.95 0.175 0.194
E 3.30 3.94 0.130 0.155
e 2.41 2.67 0.094 0.105

e1 1.14 1.40 0.044 0.055

L 12.70 15.49 0.50 0.610

R 2.16 2.41 0.085 0.094
S1 0.92 1.52 0.036 0.060
W 0.41 0.56 0.016 0.022

V5° 5°

MIN. TYP MAX. MIN. TYP. MAX.

mm. inch

9/11

STD2NC45-1, STQ1NC45

10/11

STD2NC45-1, STQ1NC45

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11/11