Datasheet STPS8H100 Datasheet (ST)

Page 1
Main product characteristics
I
F(AV)
V
RRM
T
j
(max) 0.58 V
V
F
Features and benefits
8 A
100 V
175° C

STPS8H100

High voltage power Schottky rectifier

K
A
NC
D2PAK
STPS8H100G
Negligible switching losses
Low leakage current
Good trade off between leakage current and
A
K
TO-220AC
STPS8H100D
TO-220FPAC
STPS8H100FP
A
K
forward voltage drop
Insulated package:
– TO-220FPAC
Insulating voltage = 2000 V DC
Order Codes
Typical package capacitance = 12 pF
Avalanche capability specified
Description
Schottky barrier rectifier designed for high frequency compact Switched Mode Power
Part Number Marking
STPS8H100D STPS8H100D
STPS8H100G STPS8H100G
STPS8H100G-TR STPS8H100G
STPS8H100FP STPS8H100FP
Supplies such as adaptators and on board DC/DC converters.

Table 1. Absolute ratings (limiting values)

Symbol Parameter Value Unit
V
RRM
I
F(RMS)
I
F(AV)
I
FSM
P
ARM
T
Repetitive peak reverse voltage 100
RMS forward voltage 30
2
Average forward current δ = 0.5
TO-220AC, D
DO-15 TC = 150° C
PA K TC = 165° C
Surge non repetitive forward current tp = 10 ms sinusoidal 250
Repetitive peak avalanche power tp = 1 µs Tj = 25° C 10800
Storage temperature range -65 to + 175 ° C
stg
Maximum operating junction temperature 175 ° C
T
j
8
V
A
A
A
W
June 2006 Rev 10 1/9
www.st.com
9
Page 2
Characteristics STPS8H100
=tp/T
t
p

1 Characteristics

Table 2. Thermal resistance

Symbol Parameter Value Unit
R
th(j-c)

Table 3. Static electrical characteristics (per diode)

Junction to case
TO-220FPAC 4
TO-220AC, D
2
PA K 1 . 6
Symbol Parameter Tests conditions Min. Typ Max. Unit
T
(1)
I
R
V
F
Reverse leakage current
(2)
Forward voltage drop
1. tp = 5 ms, δ < 2%
= 380 µs, δ < 2%
2. t
p
= 25° C
j
T
= 125° C 2 6.0 mA
j
= 25° C
T
j
T
= 125° C 0.56 0.58
j
T
= 25° C
j
T
= 125° C 0.59 0.64
j
T
= 25° C
j
T
= 125° C 0.65 0.68
j
= V
V
R
= 8 A
I
F
= 10 A
I
F
= 16 A
I
F
RRM
4.5 µA
0.71
0.77
0.81
° C/W
V
To evaluate the conduction losses use the following equation: P = 0.48 x I
+ 0.0125 I
F(AV)
F2(RMS)
Figure 1. Average forward power
dissipation versus average forward current
P (W)
F(av)
6.0
5.5
5.0
4.5
4.0
3.5
3.0
2.5
2.0
1.5
1.0
0.5
0.0 012345678910
δ = 0.05
δ = 0.1
I (A)
F(av)
δ = 0.2
δ = 0.5
δ
=tp/T
δ = 1
T
Figure 2. Normalized avalanche power
derating versus pulse duration
P(t)
ARM p
P (1µs)
ARM
1
0.1
0.01
t
p
0.001
0.10.01 1
t (µs)
p
10 100 1000
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Page 3
STPS8H100 Characteristics
=tp/T
t
p
=tp/T
t
p
=tp/T
t
p
Figure 3. Normalized avalanche power
derating versus junction temperature
P(t)
ARM p
P (25°C)
ARM
1.2
1
0.8
0.6
0.4
0.2
0
25 50 75 100 125 150
T (°C)
j
Figure 5. Average forward current versus
ambient temperature, δ = 0.5, (TO-220FPAC)
I
(A)
F(av)
10
8
6
4
2
δ
0
0 20 40 60 80 100 120 140 160 180
=tp/T
T
R
th(j-a)=Rth(j-c)
t
p
R
th(j-a)
T
amb
=50°C/W
(°C)
Figure 4. Average forward current versus
ambient temperature, δ = 0.5,
T
amb
2
PAK)
R
th(j-a)
(°C)
R
th(j-a)=Rth(j-c)
=15°C/W
(TO-220AC, D
I
(A)
F(av)
10
8
6
4
2
0
0 20 40 60 80 100 120 140 160 180
=tp/T
δ
T
t
p
Figure 6. Non repetitive surge peak
forward current versus overload duration - maximum values, per diode (TO-220AC, D
IM(A)
160
140
120
100
80
60
40
IM
20
0
1E-3 1E-2 1E-1 1E+0
δ=0.5
t
t(s)
2
Tc=100°C
PAK)
Tc=75°C
Tc=125°C
Figure 7. Non repetitive surge peak forward
current versus overload duration
- maximum values (TO-220FPAC)
IM(A)
100
90 80 70 60 50 40 30
IM
20 10
0 1E-3 1E-2 1E-1 1E+0
δ=0.5
t
Tc=100°C
t(s)
Tc=75°C
Tc=125°C
Figure 8. Relative variation of thermal
impedance junction to case versus
δ
=tp/T
T
2
PAK)
t
p
pulse duration (TO-220AC, D
Z
th(j-c)/Rth(j-c)
1.0
0.8
δ = 0.5
0.6
0.4
δ = 0.2
δ = 0.1
0.2
0.0 1E-4 1E-3 1E-2 1E-1 1E+0
3/9
Single pulse
tp(s)
Page 4
Characteristics STPS8H100
=tp/T
t
p
Figure 9. Relative variation of thermal
impedance junction to case versus pulse duration (TO-220FPAC)
Z
th(j-c)/Rth(j-c)
1.0
0.8
δ = 0.5
0.6
0.4
δ = 0.2
δ = 0.1
0.2
0.0 1E-3 1E-2 1E-1 1E+0 1E+1
Single pulse
tp(s)
δ
T
=tp/T
Figure 11. Junction capacitance versus
reverse voltage applied (typical values)
C(pF)
1000
500
F=1MHz Tj=25°C
Figure 10. Reverse leakage current versus
reverse voltage applied (typical values)
IR(µA)
5E+3
1E+3
Tj=125°C
1E+2
1E+1
1E+0
Tj=25°C
1E-1
t
p
1E-2
0 102030405060708090100
VR(V)
Figure 12. Forward voltage drop versus
forward current (maximum values)
IFM(A)
50.0
10.0
Tj=125°C
Tj=25°C
200
VR(V)
100
1 10 100
Figure 13. Thermal resistance junction to
ambient versus copper surface under tab - Epoxy printed circuit board FR4, e
R
(°C/W)
th(j-a)
80
70
60
50
40
30
20
10
0
0 4 8 12 16 20 24 28 32 36 40
= 35 µm (D2PA K)
cu
S
(cm²)
(Cu)
1.0
VFM(V)
0.1 0 0.2 0.4 0.6 0.8 1 1.2 1.4 1.6
4/9
Page 5
STPS8H100 Package information

2 Package information

Epoxy meets UL94, V0.
Table 4 . D
2
PAK Dimensions
Dimensions
REF.
Millimeters Inches
Min. Max. Min. Max.
L2
A
E
C2
A 4.40 4.60 0.173 0.181
A1 2.49 2.69 0.098 0.106
A2 0.03 0.23 0.001 0.009
B 0.70 0.93 0.027 0.037
D
L
L3
A1
B2
B
G
2.0 MIN. FLAT ZONE
C
A2
R
B2 1.14 1.70 0.045 0.067
C 0.45 0.60 0.017 0.024
C2 1.23 1.36 0.048 0.054
D 8.95 9.35 0.352 0.368
E 10.00 10.40 0.393 0.409
G 4.88 5.28 0.192 0.208
L 15.00 15.85 0.590 0.624
L2 1.27 1.40 0.050 0.055
L3 1.40 1.75 0.055 0.069
V2
M 2.40 3.20 0.094 0.126
R 0.40 typ. 0.016 typ.
V2

Figure 14. D2PAK footprint dimensions (in mm)

16.90
10.30
8.90
5/9
5.08
1.30
3.70
Page 6
Package information STPS8H100

Table 5. TO-220AC Dimensions

Dimensions
L2
F1
REF.
Millimeters Inches
Min. Max. Min. Max.
A 4.40 4.60 0.173 0.181
H2
Ø I
L5
A
C
L7
C 1.23 1.32 0.048 0.051
D 2.40 2.72 0.094 0.107
E 0.49 0.70 0.019 0.027
F 0.61 0.88 0.024 0.034
L6
F1 1.14 1.70 0.044 0.066
G 4.95 5.15 0.194 0.202
L9
D
H2 10.00 10.40 0.393 0.409
L2 16.40 typ. 0.645 typ.
L4
F
M
E
G
L4 13.00 14.00 0.511 0.551
L5 2.65 2.95 0.104 0.116
L6 15.25 15.75 0.600 0.620
L7 6.20 6.60 0.244 0.259
L9 3.50 3.93 0.137 0.154
M 2.6 typ. 0.102 typ.
Diam. I 3.75 3.85 0.147 0.151
6/9
Page 7
STPS8H100 Package information

Table 6. TO-220FPAC Dimensions

Dimensions
L3
L2
L4
G1
REF.
Millimeters Inches
Min. Max. Min. Max.
A
H
B
A 4.4 4.6 0.173 0.181
B 2.5 2.7 0.098 0.106
D 2.5 2.75 0.098 0.108
Dia
L6
E 0.45 0.70 0.018 0.027
F 0.75 1 0.030 0.039
F1 1.15 1.70 0.045 0.067
L7
G 4.95 5.20 0.195 0.205
G1 2.4 2.7 0.094 0.106
H 10 10.4 0.393 0.409
F1
L5
D
L2 16 Typ. 0.63 Typ.
L3 28.6 30.6 1.126 1.205
F
E
L4 9.8 10.6 0.386 0.417
L5 2.9 3.6 0.114 0.142
G
L6 15.9 16.4 0.626 0.646
L7 9.00 9.30 0.354 0.366
Dia. 3.00 3.20 0.118 0.126
In order to meet environmental requirements, ST offers these devices in ECOPACK® packages. These packages have a lead-free second level interconnect. The category of second level interconnect is marked on the package and on the inner box label, in compliance with JEDEC Standard JESD97. The maximum ratings related to soldering conditions are also marked on the inner box label. ECOPACK is an ST trademark. ECOPACK specifications are available at: www.st.com.
7/9
Page 8
Ordering information STPS8H100

3 Ordering information

Ordering type Marking Package Weight Base qty Delivery mode
STPS8H100D STPS8H100D TO-220AC 1.86 g 50 Tube
STPS8H100FP STPS8H100FP TO-220FPAC 1.9 g 50 Tube
STPS8H100G STPS8H100G D
2
PAK 1.48 g 50 Tube
STPS8H100G-TR STPS8H100G D2PAK 1.48 g 500 Tape and reel

4 Revision history

Date Revision Description of Changes
Jul-2003 6D Last update.
Reformatted to current standard. Added ECOPACK statement.
1-June-2006 10
Changed nF to pF in Figure 11. Revision number set to 10 to align with on-line versioning.
8/9
Page 9
STPS8H100
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