Page 1
STPS80L15CY
LOW DROP OR-ing POWER SCHOTTKY RECTIFIER
PRELIMINARY DATASHEET
MAINPRODUCTCHARACTERISTICS
I
F(AV)
V
RRM
2 x 40 A
15 V
Tj (max) 125 °C
V
(max) 0.33V
F
FEATURESANDBENEFITS
Max247 PACKAGE, DUAL DIODE
CONSTRUCTION,2 x 40A
15V BLOCKINGVOLTAGESUITABLEFOR 5V
AND12V OR-ing
EXTREMELY LOW VOLTAGE VOLTAGE
DROP:0.33V@ 100°C
OPERATING JUNCTION TEMPERATURE:
125°C
DESCRIPTION
The STPS80L15CY uses proprietary barrier
technology to optimize forward voltage drop for
OR-ingfunctions in n-1 faulttolerant Switch Mode
PowerSupplies.
A1
K
A2
A2
K
A1
Max247
ABSOLUTERATINGS(limitingvalues, per diode)
Symbol Parameter Value Unit
V
RRM
I
F(RMS)
I
F(AV)
I
FSM
I
RRM
T
stg
Repetitivepeakreversevoltage 15 V
RMSforwardcurrent 50 A
Averageforwardcurrent Tc = 110°C
δ
= 0.5
Per diode
Per device
40
80
Surgenon repetitiveforwardcurrent tp = 10 ms sinusoidal 400 A
Repetitivepeakreversecurrent tp = 2 µs F = 1kHz square 2 A
Storagetemperaturerange - 65 to+ 150 °C
Tj Maximumoperating junctiontemperature 125 °C
dV/dt Criticalrateof riseof reversevoltage 10000 V/µs
November 1999 - Ed:4B
A
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STPS80L15CY
THERMALRESISTANCES
Symbol Parameter Value Unit
R
R
th (j-c)
th (c)
Junctionto case Perdiode 0.7
Whenthe diodes 1 and 2 are used simultaneously:
∆
Tj(diode1) = P(diode1)x R
(Perdiode) + P(diode2) x R
th(j-c)
Total 0.5
Coupling 0.3
th(c)
°
C/W
STATICELECTRICALCHARACTERISTICS
(perdiode)
Symbol Parameter Tests conditions Min. Typ. Max. Unit
I
* Reverseleakagecurrent Tj = 25°CV
R
=5V 4 mA
R
Tj = 100°C 280 400
Tj = 25°CV
= 12V 11
R
Tj = 100°C 0.44 1.1 A
Tj = 25°CV
= 15V 16 mA
R
Tj = 100°C 0.53 1.3 A
V
* Forward voltage drop Tj = 25°CI
F
Tj = 100°CI
Tj = 25°CI
Tj = 100°CI
Pulse test : * tp = 380 µs, δ <2%
To evaluate the maximum conduction losses use the following equation :
P = 0.20 x I
F(AV)
+ 0.0032x I
F2(RMS)
= 40A 0.42 V
F
= 40A 0.30 0.33
F
= 80A 0.55
F
= 80A 0.40 0.46
F
Fig. 1: Averageforward powerdissipation versus
averageforwardcurrent(per diode).
PF(av)(W)
22
20
18
16
14
12
10
8
6
4
2
0
δ
=
0.05
0 5 10 15 20 25 30 35 40 45 50 55 60
2/4
δ = 0.2
δ
=
0.1
=
δ
IF(av)(A)
0.5
δ
=
1
T
δ
=tp/T
tp
Fig. 2: Average forward current versus ambient
temperature(δ=0.5,per diode).
IF(av)(A)
50
45
40
35
30
25
20
15
10
5
0
0 25 50 75 100 125
δ
=tp/T
T
tp
Rth(j-a)=Rth(j-c)
Rth(j-a)=5°C/W
Tamb(°C)
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STPS80L15CY
Fig. 3:
Nonrepetitive surge peak forward current
versus overload duration (maximum values, per
diode).
IM(A)
600
500
400
300
Tc=25°C
Tc=50°C
200
IM
100
0
1E-3 1E-2 1E-1 1E+0
δ=0.5
t
t(s)
Tc=75°C
Fig. 5: Reverse leakage current versus reverse
voltageapplied (typicalvalues, per diode).
IR(mA)
1E+3
1E+2
Tj=100°C
Tj=75°C
Fig. 4:
Relative variation of thermal impedance
junctionto case versus pulse(perdiode).
Zth(j-c)/Rth(j-c)
1.0
0.8
δ=0.5
0.6
δ=0.2
0.4
δ=0.1
0.2
Single pulse
0.0
1E-3 1E-2 1E-1 1E+0
tp(s)
δ
=tp/T
T
tp
Fig. 6: Junction capacitance versus reverse
voltageapplied(typical values,per diode).
C(nF)
10
5
F=1MHz
Tj=25°C
1E+1
Tj=25°C
1E+0
VR(V)
1E-1
0123456789101112131415
Fig. 7: Forward voltage drop versus forward
current(per diode).
IFM(A)
200
100
10
1
0.0 0.1 0.2 0.3 0.4 0.5 0.6 0.7 0.8
Tj=100°C
(typical values)
Tj=100°C
(Maximumvalues)
Tj=25°C
(Maximumvalues)
VFM(V)
2
VR(V)
1
12 51020
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Page 4
STPS80L15CY
PACKAGEMECHANICAL DATA
Max247
REF.
DIMENSIONS
Millimeters Inches
AE
Min. Max. Min. Max.
A 4.70 5.30 0.185 0.209
A1 2.20 2.60 0.087 0.102
b 1.00 1.40 0.038 0.055
D
b1 2.00 2.40 0.079 0.094
b2 3.00 3.40 0.118 0.133
c 0.40 0.80 0.016 0.031
L1
A1
b1
L
b2
e
b
c
D 19.70 10.30 0.776 0.799
e 5.35 5.55 0.211 0.219
E 15.30 15.90 0.602 0.626
L 14.20 15.20 0.559 0.598
L1 3.70 4.30 0.146 0.169
Orderingtype Marking Package Weight Base qty Delivery mode
STPS80L15CY STPS80L15CY Max247 4.4g 30 Tube
Coolingmethod: by conduction(C)
Epoxymeets UL94,V0
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