Page 1
HIGH VOLTAGE POWER SCHOTTKY RECTIFIER
MAINPRODUCT CHARACTERISTICS
STPS80H100TV
I
F(AV)
V
RRM
2 x 40 A
100 V
Tj (max) 150 °C
V
(max) 0.65 V
F
FEATURESAND BENEFITS
NEGLIGIBLESWITCHINGLOSSES
HIGHJUNCTIONTEMPERATURECAPABILITY
LOW LEAKAGECURRENT
GOODTRADEOFFBETWEENLEAKAGECUR-
RENTANDFORWARDVOLTAGEDROP
AVALANCHERATED
LOW INDUCTANCEPACKAGE
INSULATEDPACKAGE:
Insulatedvoltage= 2500V
(RMS)
Capacitance= 45 pF
DESCRIPTION
High voltag e d ua l Schot tky barrier rectifier
designe d for hig h freque ncy telecom and
computer Switched Mode Power Suppl ies
andotherpowerconverters.
K2K1A2
A1
ISOTOP
TM
Packaged in ISOTOP, this device is intendedfor
use in medium voltage operation, and particularly, in high frequency circuitries where low
switching losses and low noise are required.
ABSOLUTE RATINGS
(limitingvalues,per diode)
Symbol Parameter Value Unit
V
RRM
I
F(RMS)
I
F(AV)
I
FSM
I
RRM
I
RSM
T
Repetitivepeak reversevoltage 100 V
RMSforward current 125 A
Averageforwardcurrent Tc= 120°C
δ = 0.5
Perdiode
Perdevice
Surgenon repetitiveforward current tp= 10 mssinusoidal 700 A
Repetitivepeak reversecurrent tp= 2µs squareF = 1kHz 2 A
Non repetitivepeakreverse current tp= 100 µs square 5 A
Storagetemperaturerange -55 to+150°C
stg
40
80
Tj Maximumoperating junctiontemperature * 150 °C
dV/dt Criticalrate of riseof reversevoltage 10000 V/µs
dPtot
*:
dTj
July 1999- Ed:3A
<
1
Rth(j−a
thermal runawayconditionfor a diodeon its own heatsink
)
A
1/4
Page 2
STPS80H100TV
THERMAL RESISTANCES
Symbol Parameter Value Unit
R
th (j-c)
R
th (c)
Whenthe diodes1 and 2 areused simultaneously:
∆ Tj(diode1) = P(diode1)x R
STATICELECTRICALCHARACTERISTICS(perdiode)
Symbol Parameter TestsConditions Min. Typ. Max. Unit
I
R
V
F
Junctionto case Per leg 1 °C/W
Total 0.55
0.1
(Perdiode) + P(diode2) x R
th(j-c)
* Reverseleakage current Tj = 25°CV
th(c)
R=VRRM
Coupling
Tj = 125°C 7 25 mA
** Forwardvoltagedrop Tj = 25°CI
Tj = 125°CI
Tj = 25°CI
Tj = 125°CI
= 40 A 0.78 V
F
= 40 A 0.61 0.65
F
= 80 A 0.89
F
= 80 A 0.7 0.74
F
20 µA
Pulse test : * tp = 5 ms,δ <2%
** tp = 380µs, δ <2%
To evaluate the maximum conduction losses use the followingequation :
P = 0.56 x I
Fig. 1: Averageforward powerdissipation versus
averageforwardcurrent(per diode).
PF(av)(W)
35
30
25
20
15
10
5
0
0 5 10 15 20 25 30 35 40 45 50
F(AV)
+ 0.0022 xI
δ = 0.1
δ= 0.05
F2(RMS)
δ = 0.2
IF(av) (A)
δ = 0.5
δ
=tp/T
δ =1
Fig. 2: Average forward current versus ambient
temperature(δ=0.5,per diode).
IF(av)(A)
50
45
40
35
30
25
20
T
tp
15
10
5
=tp/T
δ
0
0 25 50 75 100 125 150
Rth(j-a)=5°C/W
T
tp
Rth(j-a)=Rth(j-c)
Tamb(°C)
2/4
Page 3
STPS80H100TV
Fig. 3:
Non repetitive surge peak forward current
versusoverloadduration(maximumvalues,perdiode).
IM(A)
500
400
300
200
Tc=50°C
IM
100
0
1E-3 1E-2 1E-1 1E+0
δ=0.5
t
t(s)
Tc=75°C
Tc=110°C
Fig. 5: Reverse leakage current versus reverse
voltageapplied (typicalvalues,per diode).
IR(µA)
1E+4
1E+3
Tj=125°C
Fig. 4:
Relative variation of thermal impedance
junctionto caseversus pulseduration(per diode).
Zth(j-c)/Rth(j-c)
1.0
0.8
δ = 0.5
0.6
0.4
δ = 0.2
δ = 0.1
0.2
0.0
Single pulse
tp(s)
1E-3 1E-2 1E-1 1E+0 5E+0
δ
=tp/T
T
tp
Fig. 6: Junction capacitance versus reverse
voltageapplied (typicalvalues,per diode).
C(nF)
5.0
F=1MHz
Tj=25°C
1E+2
1E+1
1E+0
1E-1
0 102030405060708090100
Tj=25°C
VR(V)
Fig. 7: Forward voltage drop versus forward
current(maximum values,per diode).
IFM(A)
500
100
10
1
0.0 0.2 0.4 0.6 0.8 1.0 1.2 1.4 1.6 1.8 2.0
Tj=125°C
Tj=25°C
VFM(V)
1.0
VR(V)
0.1
1 2 5 10 20 50 100
3/4
Page 4
STPS80H100TV
PACKAGEMECHANICALDATA
ISOTOP
TM
DIMENSIONS
REF.
Millimeters Inches
Min. Max. Min. Max.
A 11.80 12.20 0.465 0.480
A1 8.90 9.10 0.350 0.358
B 7.8 8.20 0.307 0.323
C 0.75 0.85 0.030 0.033
C2 1.95 2.05 0.077 0.081
D 37.80 38.20 1.488 1.504
D1 31.50 31.70 1.240 1.248
E 25.15 25.50 0.990 1.004
E1 23.85 24.15 0.939 0.951
E2 24.80 typ. 0.976typ.
G 14.90 15.10 0.587 0.594
G1 12.60 12.80 0.496 0.504
G2 3.50 4.30 0.138 0.169
F 4.10 4.30 0.161 0.169
F1 4.60 5.00 0.181 0.197
P 4.00 4.30 0.157 0.69
P1 4.00 4.40 0.157 0.173
S 30.10 30.30 1.185 1.193
Coolingmethod: C
Recommendedtorque value:1.3 N.m.
Maximumtorquevalue: 1.5 N.m.
Orderingtype Marking Package Weight Base qty Deliverymode
STPS80H100TV STPS80H100TV ISOTOP 27g
10 Tube
withoutscrews
EpoxymeetsUL94,V0
Informationfurnished is believed to be accurateand reliable. However, STMicroelectronics assumes no responsibilityfor the consequences of
use of such informationnor forany infringementof patents or other rights ofthird parties which may result fromitsuse. No license is granted by
implication or otherwise under any patent or patent rights of STMicroelectronics. Specifications mentioned in this publication are subject to
change without notice. This publication supersedes and replacesall information previously supplied.
STMicroelectronics products are not authorized for use as critical components in lifesupport devices or systems without express written approval ofSTMicroelectronics.
The ST logo is a registered trademark of STMicroelectronics
1999 STMicroelectronics - Printed in Italy - All rights reserved.
STMicroelectronics GROUP OF COMPANIES
Australia - Brazil - China - Finland - France - Germany - Hong Kong - India - Italy - Japan - Malaysia
Malta - Morocco - Singapore - Spain - Sweden - Switzerland - United Kingdom - U.S.A.
http://www.st.com
4/4
Loading...