Datasheet STPS80170C Datasheet (ST)

®

d

-

HIGH VOLTAGE POWER SCHOTTKY RECTIFIER

Table 1: Main Product Characteristics

I

F(AV)

V

RRM

T

j

(max)

V

F

FEATURES AND BENEFITS

■ High junction temperature capability

■ Low leakage current

■ Good trade off between leakage current and

forward voltage drop

■ Low thermal resistance

■ High frequency operation

■ Avalanche specification

DESCRIPTION

Dual center tab Schottky rectifier suited for High
Frequency Switched Mode Power Supplies.
Packaged in TO-247, this device is intended for
use to enhance the reliability of the application.

2 x 40 A

170 V

175 °C

0.74 V

STPS80170C

A1

K

A2

A2

K

A1

TO-247

STPS80170CW

Table 2: Order Code

Part Number Marking

STPS80170CW STPS80170CW

Table 3: Absolute Ratings (limiting values, per diode)

Symbol Parameter Value Unit

V

RRM

I

F(RMS)

I

F(AV)

I

FSM

P

ARM

T

T

Repetitive peak reverse voltage 170 V

RMS forward current 80 A

T

Average forward current

Surge non repetitive forward current

Repetitive peak avalanche power

Storage temperature range -65 to + 175 °C

stg

Maximum operating junction temperature * 175 °C

j

= 150 °C δ = 0.5

c

t

= 10 ms sinusoidal

p

t

= 1 µs Tj = 25 °C

p

Per diode
Per device

38200 W

40
80

500 A

dV/dt Critical rate of rise of reverse voltage 10000 V/µs

Ptot

--------------

* : thermal runaway condition for a diode on its own heatsink

dTj

September 2005

1

-------------- ------------

<

Rth j a–()

REV. 1

A

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STPS80170C

Table 4: Thermal Parameters

Symbol Parameter Value Unit

R

th(j-c)

R

th(c)

When the diodes 1 and 2 are used simultaneously:

∆ Tj(diode 1) = P(diode 1) x R

Junction to case

th(j-c)

(Per diode) + P(diode 2) x R

Per diode
Total

Coupling

th(c)

0.7

0.5

0.3

Table 5: Static Electrical Characteristics (per diode)

Symbol Parameter Tests conditions Min. Typ Max. Unit

= 25 °C

T

I

*

R

V

F

Pulse test: * tp = 5 ms, δ < 2%

To evaluate the conduction losses use the following equation: P = 0.62 x I

Reverse leakage current

**

Forward voltage drop

** tp = 380 µs,

δ < 2%

j

= 125 °C

T

j

T

= 25 °C

j

= 125 °C

T

j

T

= 25 °C

j

T

= 125 °C

j

V

R

I

F

I

F

= V

RRM

= 40 A

= 80 A

F(AV)

+ 0.003 I

20 80 mA

0.80 0.84

0.68 0.74

0.90 0.96

0.80 0.86

F2(RMS)

80 µA

°C/W

V

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STPS80170C

Figure 1: Average forward power dissipation
versus average forward current (per diode)

P

(W)

F(AV)

40

35

30

25

20

15

10

5

0

0 5 10 15 20 25 30 35 40 45 50

d=0.05

I

(A)

F(AV)

d=0.1 d=0.2

d

d=0.5

=t /T

d=1

T

t

p

p

Figure 3: Normalized avalanche power
derating versus pulse duration

P(t)

ARM p

P (1µs)

ARM

1

0.1

0.01

t (µs)

0.001

0.10.01 1

p

10 100 1000

Figure 2: Average forward current versus
ambient temperature (δ = 0.5, per diode)

I

(A)

F(AV)

45

40

35

30

25

20

15

10

5

0

T

t

=t /T

p

p

d

0 25 50 75 100 125 150 175

R

th(j-a)=Rth(j-c)

R

th(j-a)

=15°C/W

T

amb

(°C)

Figure 4: Normalized avalanche power
derating versus junction temperature

P(t)

ARM p

P (25°C)

ARM

1.2

1

0.8

0.6

0.4

0.2

0

25

50 75 100 125 150

T (°C)

j

Figure 5: Non repetitive surge peak forward
current versus overload duration (maximum
values, per diode)

IM(A)

500

450

400

350

300

250

200

150

100

I

M

50

0

1.E-03 1.E-02 1.E-01 1.E+00

t

d

=0.5

t(s)

TC=50°C

TC=75°C

TC=125°C

Figure 6: Relative variation of thermal
impedance junction to case versus pulse
duration

Z

th(j-c)/Rth(j-c)

1.0

0.9

0.8

0.7

d=0.5

0.6

0.5

d=0.2

0.4

d=0.1

0.3

0.2

Single pulse

0.1

0.0

1.E-03 1.E-02 1.E-01 1.E+00

tP(s)

d

=T /T

T

t

p

p

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STPS80170C

0

C(pF)

Figure 7: Reverse leakage current versus
reverse voltage applied (typical values, per
diode)

IR(µA)

1.E+06

1.E+05

1.E+04

1.E+03

1.E+02

1.E+01

Tj=150°C

Tj=125°C

Tj=100°C

Tj=75°C

Tj=50°C

Tj=25°C

1.E+00

1.E-01

VR(V)

0 10 20 30 40 50 60 70 80 90 100 110 120 130 140 150 160 17

Figure 9: Forward voltage drop versus forward
current (per diode, low level)

IFM(A)

40

35

Tj=125°C

30

25

20

15

10

5

0

0.0 0.1 0.2 0.3 0.4 0.5 0.6 0.7 0.8 0.9 1.0

Tj=125°C

(Maximum values)

(Maximum values)

Tj=125°C

Tj=125°C

(Typical values)

(Typical values)

VFM(V)

Tj=25°C

(Maximum values)

Figure 8: Junction capacitance versus reverse
voltage applied (typical values, per diode)

10000

1000

100

VR(V)

1 10 100 1000

V

F=1MHz

OSC

Tj=25°C

=30mV

RMS

Figure 10: Forward voltage drop versus
forward current (per diode, high level)

IFM(A)

1000

Tj=125°C

Tj=125°C

(Maximum values)

100

10

1

0.0 0.1 0.2 0.3 0.4 0.5 0.6 0.7 0.8 0.9 1.0 1.1 1.2 1.3 1.4

(Maximum values)

Tj=125°C

Tj=125°C

(Typical values)

(Typical values)

Tj=25°C

(Maximum values)

VFM(V)

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Figure 11: TO-247 Package Mechanical Data

V

V

H

L5

L

F1

V2

F(x3)

F4

G

F2

F3

L2

L1

L3

Dia

A

L4

D

STPS80170C

DIMENSIONS

REF.

A 4.85 5.15 0.191 0.203
D 2.20 2.60 0.086 0.102
E 0.40 0.80 0.015 0.031

F 1.00 1.40 0.039 0.055
F1 3.00 0.118
F2 2.00 0.078
F3 2.00 2.40 0.078 0.094
F4 3.00 3.40 0.118 0.133

G 10.90 0.429

H 15.45 15.75 0.608 0.620

L 19.85 20.15 0.781 0.793
L1 3.70 4.30 0.145 0.169
L2 18.50 0.728
L3 14.20 14.80 0.559 0.582
L4 34.60 1.362
L5 5.50 0.216

EM

M 2.00 3.00 0.078 0.118

V5° 5°
V2 60° 60°

Dia. 3.55 3.65 0.139 0.143

Millimeters Inches

Min. Typ. Max. Min. Typ. Max.

In order to meet environmental requirements, ST offers these devices in ECOPACK® packages. These
packages have a Lead-free second level interconnect . The category of second level interconnect is
marked on the package and on the inner box label, in compliance with JEDEC Standard JESD97. The
maximum ratings related to soldering conditions are also marked on the inner box label. ECOPACK is an
ST trademark. ECOPACK specifications are available at: www.st.com.

Table 6: Ordering Information

Ordering type Marking Package Weight Base qty Delivery mode

STPS80170CW STPS80170CW TO-247 4.4 g 30 Tube

■ Epoxy meets UL94, V0

■ Cooling method: by conduction (C)

■ Recommended torque value: 0.8 Nm.

■ Maximum torque value: 1.0 Nm.

Table 7: Revision History

Date Revision Description of Changes

16-Sep-2005 1 First issue.

5/6

STPS80170C

Information furnished is believed to be accurate and reliable. However, STMicroelectronics assumes no responsibility for the consequences
of use of such information nor for any infringement of patents or other rights of third parties which may result from its use. No license is granted
by implication or otherwise under any patent or patent rights of STMicroelectronics. Specifications mentioned in this publication are subject
to change without notice. This publication supersedes and replaces all information previously supplied. STMicroelectronics products are not
authorized for use as critical components in life support devices or systems without express written approval of STMicroelectronics.

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