Page 1
®
STPS80150CW
HIGH VOLTAGE POWER SCHOTTKY RECTIFIER
MAJOR PRODUCTS CHARACTERISTICS
I
F(AV)
V
RRM
2x40A
150 V
Tj (max) 175°C
(max) 0.74 V
V
F
FEATURES AND BENEFITS
HIGHJUNCTIONTEMPERATURECAPABILITY
■
LOW LEAKAGE CURRENT
■
GOOD TRADE OFF BETWEEN LEAKAGE
■
CURRENT AND FORWARD VOLTAGE DROP
LOW THERMAL RESISTANCE
■
■ HIGH FREQUENCY OPERATION
DESCRIPTION
Dual center tap Schottky rectifiers suited for high
frequency switch mode power supply.
Packaged in TO-247, this devices is intended for
use to enhance the reliability of the application.
ABSOLUTE RATINGS (limiting values, per diode)
A1
A2
TO-247
A1
K
A2
K
Symbol Parameter Value Unit
V
I
*:
RRM
F(RMS)
I
F(AV)
I
FSM
P
ARM
T
Tj
dV/dt
dPtot
Repetitive peak reverse voltage
RMS forward current
Average forward current Tc = 150°C
Surge non repetitive forward current tp = 10 ms Sinusoidal
Repetitive peak avalanche power tp = 1µs Tj = 25°C
stg
Storage temperature range
Maximum operating junction temperature *
Critical rate of rise of reverse voltage
<
dTj Rth j a
October 2003 - Ed: 1A
Per diode
δ = 0.5
Per device
thermal runaway condition for a diode on its own heatsink
−1()
150 V
80 A
40
80
500 A
38200 W
- 65 to + 175 °C
175 °C
10000 V/µs
A
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Page 2
STPS80150CW
THERMAL RESISTANCES
Symbol Parameter Value Unit
R
R
th(j-c)
th(j-c)
Junction to case
Junction to case
When the diodes 1 and 2 are used simultaneously :
∆ Tj(diode 1) = P(diode1) x R
(Per diode) + P(diode 2) x R
th(j-c)
STATIC ELECTRICAL CHARACTERISTICS (per diode)
Symbol Parameter Tests Conditions Min. Typ. Max. Unit
*
I
R
V
F
Reverse leakage
current
*
Forward voltage drop Tj =25° CI
Tj = 25°C VR=V
Tj = 125°C
Tj = 125°C I
Tj=25°CI
Tj = 125°C I
Pulse test : *tp = 380 µ s, δ <2%
To evaluate the conduction losses use the following equation:
P=0.62xI
F(AV)
+ 0.003 I
F2(RMS)
Per diode
Total
0.7
0.5
Coupling 0.3 °C/W
th(c)
RRM
53 0µ A
62 0m A
=40A
F
=40A
F
=80A
F
=80A
F
0.8 0.84 V
0.68 0.74
0.9 0.96
0.8 0.86
°C/W
Fig. 1: Conduction losses versus average current
(per diode).
P (W)
F(AV)
40
δ = 0.2
δ = 0.5
δ
=tp/T
δ = 1
T
tp
δ = 0.05
δ = 0.1
I (A)
F(AV)
35
30
25
20
15
10
5
0
0 5 10 15 20 25 30 35 40 45 50
Fig. 3: Normalized avalanche power derating
versus junction temperature.
P( t )
ARM p
P (25°C)
ARM
1.2
1
0.8
0.6
0.4
0.2
0
25 50 75 100 125 150
T (°C)
j
Fig. 2: Normalized avalanche power derating
versus pulse duration.
P( t )
ARM p
P (1µs)
ARM
1
0.1
0.01
t (µs)
0.001
0.1 0.01 1
p
10 100 1000
Fig. 4: Average forward current versus ambient
temperature (δ =0.5, per diode).
I (A)
F(AV)
45
40
35
30
25
20
15
δ
=tp/T
T
tp
10
5
0
0 25 50 75 100 125 150 175
R=R
th(j-a) th(j-c)
R =15°C/W
th(j-a)
T (°C)
amb
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Page 3
STPS80150CW
Fig. 5: Non repetitive surge peak forward current
versus overload duration (maximum values, per
diode).
I (A)
M
500
450
400
350
300
250
200
150
IM
100
50
0
1.E-03 1.E-02 1.E-01 1.E+00
δ=0.5
t
t(s)
T =50°C
c
T =75°C
c
T =125°C
c
Fig. 7: Reverse leakage current versus reverse
voltage applied (typical values, per diode).
I (µA)
R
1.E+05
T=150°C
1.E+04
1.E+03
1.E+02
1.E+01
1.E+00
1.E-01
10 30 50 70 90 110 130 150
j
T=125°C
j
T=100°C
j
T=75°C
j
T=50°C
j
T=25°C
j
V (V)
R
Fig. 6: Relative variation of thermal impedance
junction to case versus pulse duration.
Z/ R
th(j-c) th(j-c)
1.0
0.9
0.8
0.7
δ = 0.5
0.6
0.5
0.4
δ = 0.2
0.3
δ = 0.1
0.2
Single pulse
0.1
0.0
1.E-03 1.E-02 1.E-01 1.E+00
t (s)
p
δ
=tp/T
T
tp
Fig. 8: Junction capacitance versus reverse
voltage applied (typical values, per diode).
C(pF)
10000
1000
V (V)
100
1 10 100 1000
R
F=1MHz
V =30mV
OSC RMS
T=25°C
j
Fig. 9: Forward voltage drop versus forward
current (per diode).
I (A)
FM
100.0
10.0
1.0
0.1
0.0 0.1 0.2 0.3 0.4 0.5 0.6 0.7 0.8 0.9 1.0 1.1 1.2
(maximum values)
T=125°C
j
(typical values)
T=125°C
j
V (V)
FM
T=25°C
j
(maximum values)
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Page 4
STPS80150CW
PACKAGE MECHANICAL DATA
TO-247
V
V
H
L5
L
F2
F4
L1
F3
L3
F1
V2
F(x3)
G
= =
Dia.
L4 L2
D
ME
A
DIMENSIONS
REF.
Millimeters Inches
Min. Typ. Max. Min. Typ. Max.
A 4.85 5.15 0.191 0.203
D 2.20 2.60 0.086 0.102
E 0.40 0.80 0.015 0.031
F 1.00 1.40 0.039 0.055
F1 3.00 0.118
F2 2.00 0.078
F3 2.00 2.40 0.078 0.094
F4 3.00 3.40 0.118 0.133
G 10.90 0.429
H 15.45 15.75 0.608 0.620
L 19.85 20.15 0.781 0.793
L1 3.70 4.30 0.145 0.169
L2 18.50 0.728
L3 14.20 14.80 0.559 0.582
L4 34.60 1.362
L5 5.50 0.216
M 2.00 3.00 0.078 0.118
V5 ° 5 °
V2 60° 60°
Dia. 3.55 3.65 0.139 0.143
■ Cooling method : C
■
Recommended torque value : 0.8m.N
■
Maximum torque value : 1.0m.N
Ordering type Marking Package Weight Base qty Delivery mode
STPS80150CW STPS80150CW TO-247 4.4g 30 Tube
■
Epoxy meets UL94,V0
Informationfurnishedis believed to be accurate and reliable. However, STMicroelectronics assumes no responsibilityfortheconsequences of
useof such information nor for any infringement of patentsor other rights of third parties which may resultfromits use. No license is granted by
implication or otherwise under any patent or patent rights of STMicroelectronics. Specifications mentioned in this publication are subject to
change without notice. This publication supersedes and replaces all information previously supplied. STMicroelectronics products are not authorized for use as critical components in life support devices or systems without express written approval of STMicroelectronics.
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All other names are the property of their respective owners.
© 2003 STMicroelectronics - All rights reserved.
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