Datasheet STPS640C Datasheet (ST)

Page 1

STPS640C

Power Schottky rectifier

Main product characteristics
I
F(AV)
V
RRM
T
(max) 150° C
j
(max) 0.57 V
V
F
2 x 3 A
40 V
Features and benefits
Very small conduction losses
Extremely fast switching
Low forward drop voltage
Low capacitance
Low thermal resistance
Insulated package: TO-220FPAB
Insulating voltage = 2000 V DC Capacitance = 12 pF
Avalanche capability specified
A1
K
A2
K
A2
A1
DPAK
STPS640CB
TO-220AB
STPS640CT
A2
K
A1
A1
A2
K
TO-220FPAB
STPS640CFP
Description
Dual Schottky rectifier suited to Switch Mode Power Supplies and other Power Converters.
This device is intended for use in low and medium voltage operation, and particulary, in high frequency circuitries where low switching losses are required (free wheeling and polarity protection).
March 2007 Rev 7 1/9
www.st.com
9
Page 2
Characteristics STPS640C

1 Characteristics

Table 1. Absolute ratings (limiting values, per diode)

Symbol Parameter Value Unit
V
I
F(RMS)
I
F(AV)
I
I
P
T
dV/dt Critical rate of rise of reverse voltage 10000 V/µs

Table 2. Thermal resistances

Symbol Parameter Value Unit
Repetitive peak reverse voltage 40 V
RRM
RMS forward voltage
Average forward current δ = 0.5
Surge non repetitive forward
FSM
current
Repetitive peak reverse current tp = 2 µs square F = 1 kHz 1 A
RRM
Repetitive peak avalanche power tp = 1 µs Tj = 25° C 1300 W
ARM
Storage temperature range -65 to + 150 ° C
stg
Maximum operating junction temperature 150 ° C
T
j
TO-220AB /TO-220FPAB 10
DPAK 6
TO-220AB T
DPAK T
= 10 ms Sinusoidal 75 A
t
p
= 135° C
c
= 130° C
c
= 120° C
c
A
3ATO-220FPAB T
R
th (j-c)
R
Junction to case
Coupling
)
th(c
TO-220AB / DPAK
TO-220FPAB
Per diode To t al
Per diode To t al
TO-220AB 0.5
TO-220FPAB 3
5.5 3
5.5
5.2
°C/W
°C/W
When the diodes 1 and 2 are used simultaneously :
ΔTj(diode 1) = P(diode1) x R

Table 3. Static electrical characteristics (per diode)

Symbol Parameter Test Conditions Min. Typ. Max. Unit
(1)
I
V
1. Pulse test: tp = 380 µs, δ < 2%
Reverse leakage current
R
(1)
Forward voltage drop
F
(Per diode) + P(diode 2) x R
th(j-c)
= 25° C
T
j
= 125° C 2 10 mA
T
j
V
Tj = 25° C IF = 3 A 0.63
= 25° C IF = 6 A 0.84
T
j
= 125° C IF = 3 A 0.5 0.57
T
j
= 125° C IF = 6 A 0.67 0.72
T
j
R
= V
th(c)
100 µA
RRM
To evaluate the conduction losses use the following equation: P = 0.42 x I
F(AV)
+ 0.050 I
F2(RMS)
V
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Page 3
STPS640 Characteristics
Figure 1. Average forward power
dissipation versus average forward current (per diode)
P (W)
F(AV)
2.50
2.25
2.00
1.75
1.50
1.25
1.00
0.75
0.50
0.25
0.00
0.0 0.5 1.0 1.5 2.0 2.5 3.0 3.5 4.0
δ = 0.05
δ = 0.1
δ = 0.2
I (A)
F(AV)
δ = 0.5
δ
=tp/T
δ = 1
T
tp
Figure 3. Normalized avalanche power
derating versus pulse duration
P(t)
ARM p
P (1µs)
ARM
1
0.1
0.01
t (µs)
0.001
0.10.01 1
p
10 100 1000
Figure 5. Non repetitive surge peak forward
current versus overload duration. (Maximum values, per diode) (TO-220AB / DPAK)
Figure 2. Average forward current versus
ambient temperature (
δ = 0.5, per diode)
I (A)
F(AV)
4.0
3.5
3.0
2.5
2.0
1.5
δ
=tp/T
T
tp
1.0
0.5
0.0 0 25 50 75 100 125 150
R=R
th(j-a) th(j-c)
T (°C)
amb
TO-220FPAB
R =15°C/W
th(j-a)
TO-220AB / DPAK
Figure 4. Normalized avalanche power
derating versus junction temperature
P(t)
ARM p
P (25°C)
ARM
1.2
1
0.8
0.6
0.4
0.2
0
25 50 75 100 125 150
T (°C)
j
Figure 6. Non repetitive surge peak forward
current versus overload duration. (Maximum values, per diode) (TO-220FPAB)
I (A)
M
45
40
35
30
25
20
15
10
IM
5
0
1E-3 1E-2 1E-1 1E+0
δ=0.5
t
t(s)
T =75°C
C
T =100°C
C
T =135°C
C
I (A)
M
40
35
30
25
20
15
10
IM
5
0 1E-3 1E-2 1E-1 1E+0
δ=0.5
t
t(s)
T =75°C
C
T =100°C
C
T =130°C
C
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Page 4
Characteristics STPS640C
Figure 7. Relative variation of thermal
transient impedance junction to case versus pulse duration (TO-220AB/DPAK)
Z/R
th(j-c) th(j-c)
1.0
0.8
δ = 0.5
0.6
0.4
δ = 0.2
δ = 0.1
0.2
Single pulse
0.0 1E-3 1E-2 1E-1 1E+0
t (s)
p
δ
T
=tp/T
Figure 9. Reverse leakage current versus
reverse voltage applied (typical values, per diode)
I (A)
R
1E-2
1E-3
T =150°C
j
T =125°C
j
T =100°C
j
Figure 8. Relative variation of thermal
impedance junction to case versus pulse duration (TO-220FPAB)
Z/R
th(j-c) th(j-c)
1.0
0.8
0.6
δ = 0.5
0.4
δ = 0.2
δ = 0.1
0.2
t (s)
tp
Single pulse
0.0 1E-3 1E-2 1E-1 1E+0 1E+1
p
Figure 10. Junction capacitance versus
reverse voltage applied (typical values, per diode)
C(pF)
500
100
δ
=tp/T
T
F=1MHz
V =30mV
OSC RMS
T =25°C
j
tp
1E-4
1E-5
0 5 10 15 20 25 30 35 40
T =75°C
j
V (V)
R
Figure 11. Forward voltage drop versus
forward current (maximum values, per diode)
I (A)
FM
10.0
T =150°C
j
(typical values)
T =25°C
j
1.0
V (V)
0.1
0.0 0.1 0.2 0.3 0.4 0.5 0.6 0.7 0.8 0.9 1.0
FM
V (V)
10
12 51020 50
R
Figure 12. Thermal resistance junction to
ambient versus copper surface under tab (Epoxy printed circuit board FR4, copper thickness: 35 µm)
R (°C/W)
th(j-a)
80
70
60
50
40
30
20
10
0
0 4 8 12 16 20 24 28 32 36 40
S(Cu)(cm²)
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Page 5
STPS640 Package information

2 Package information

Epoxy meets UL94, V0
Cooling method: by conduction (C)
Recommended torque value: 0.55 Nm
Maximum torque value: 0.70 Nm

Table 4. TO-220FPAB dimensions

Dimensions
Ref
Millimeters Inches
Min. Max. Min. Max.
A 4.4 4.6 0.173 0.181
A
H
B
B 2.5 2.7 0.098 0.106
D 2.5 2.75 0.098 0.108
E 0.45 0.70 0.018 0.027
Dia
L6
L2
L3
L5
F1
L4
F2
D
L7
F 0.75 1 0.030 0.039
F1 1.15 1.70 0.045 0.067
F2 1.15 1.70 0.045 0.067
G 4.95 5.20 0.195 0.205
G1 2.4 2.7 0.094 0.106
H 10 10.4 0.393 0.409
L2 16 Typ. 0.63 Typ.
G1
F
E
L3 28.6 30.6 1.126 1.205
L4 9.8 10.6 0.386 0.417
G
L5 2.9 3.6 0.114 0.142
L6 15.9 16.4 0.626 0.646
L7 9.00 9.30 0.354 0.366
Dia. 3.00 3.20 0.118 0.126
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Page 6
Package information STPS640C

Table 5. DPAK dimensions

Dimensions
Ref
A 2.20 2.40 0.086 0.094
E
B2
L2
H
L4
B
G
A1
A
C2
A1 0.90 1.10 0.035 0.043
A2 0.03 0.23 0.001 0.009
B 0.64 0.90 0.025 0.035
R
D
R
C
B2 5.20 5.40 0.204 0.212
C 0.45 0.60 0.017 0.023
C2 0.48 0.60 0.018 0.023
D 6.00 6.20 0.236 0.244
E 6.40 6.60 0.251 0.259
0.60 MIN.
A2
G 4.40 4.60 0.173 0.181
H 9.35 10.10 0.368 0.397
V2
L2 0.80 typ. 0.031 typ.
L4 0.60 1.00 0.023 0.039
V2 0° 8° 0° 8°

Figure 13. Footprint (dimensions in millimeters)

Millimeters Inches
Min. Max. Min. Max.
6.7
6.7 3 3
1.6
2.3
2.3
1.6
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Page 7
STPS640 Package information

Table 6. TO-220AB dimensions

Dimensions
L2
F2
F1
F
G1
H2
Dia
Ref
Millimeters Inches
Min. Max. Min. Max.
A 4.40 4.60 0.173 0.181
A
C
L5
L6
C 1.23 1.32 0.048 0.051
D 2.40 2.72 0.094 0.107
E 0.49 0.70 0.019 0.027
L7
F 0.61 0.88 0.024 0.034
F1 1.14 1.70 0.044 0.066
F2 1.14 1.70 0.044 0.066
G 4.95 5.15 0.194 0.202
L9
L4
D
G1 2.40 2.70 0.094 0.106
H2 10 10.40 0.393 0.409
L2 16.4 typ. 0.645 typ.
M
E
G
L4 13 14 0.511 0.551
L5 2.65 2.95 0.104 0.116
L6 15.25 15.75 0.600 0.620
L7 6.20 6.60 0.244 0.259
L9 3.50 3.93 0.137 0.154
M 2.6 typ. 0.102 typ.
Diam. 3.75 3.85 0.147 0.151
In order to meet environmental requirements, ST offers these devices in ECOPACK® packages. These packages have a lead-free second level interconnect. The category of second level interconnect is marked on the package and on the inner box label, in compliance with JEDEC Standard JESD97. The maximum ratings related to soldering conditions are also marked on the inner box label. ECOPACK is an ST trademark. ECOPACK specifications are available at: www.st.com.
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Page 8
Ordering information STPS640C

3 Ordering information

Ordering type Marking Package Weight Base qty Delivery mode
STPS640CT STPS640CT TO-220AB 2.20 g 50 Tube
STPS640CB S640C DPAK 0.30 g 75 Tube
STPS640CB-TR S640C DPAK 0.30 g 2500 Tape and reel
STPS640CFP STPS640CFP TO-220FPAB 2.08 g 50 Tube

4 Revision history

Date Revision Description of Changes
Aug-2003 6B Last release.
22-Mar-2007 7 Removed ISOWATT package.
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Page 9
STPS640
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