Datasheet STPS61170C Datasheet (ST)

Features

■ High junction temperature capability

■ Low leakage current

■ Good trade off between leakage current and

forward voltage drop

■ Low thermal resistance

■ High frequency operation

■ Avalanche specification

Description

Dual center tab Schottky rectifier suited for high
frequency switched mode power supply.

Packaged in TO-247, this device is intended for
use to enhance the reliability of the application.

STPS61170C

High voltage power Schottky rectifier

A1

K

A2

A2

K

A1

TO-247

Table 1. Device summary

Symbol Value

I

2 x 30 A

F(AV)

V

RRM

T

V

F (max)

j

170 V

175 °C

0.67 V

December 2010 Doc ID 11643 Rev 2 1/7

www.st.com

7

Characteristics STPS61170C

1 Characteristics

Table 2. Absolute ratings (limiting values, per diode)

Symbol Parameter Value Unit

V

I

F(RMS)

I

F(AV)

I

P

V

ARM

V

ASM

T

Repetitive peak reverse voltage 170 V

RRM

Forward rms current 80 A

Average forward current T

Surge non repetitive forward current t

FSM

Repetitive peak avalanche power tp = 1 µs Tj = 25 °C 31800 W

ARM

(1)

Maximum repetitive peak avalanche voltage

(1)

Maximum single pulse peak avalanche voltage

Storage temperature range -65 to + 175 °C

stg

T

Maximum operating junction temperature

j

= 150 °C δ = 0.5

C

(2)

p

t

p

I

AR

Per diode
Per device

= 10 ms sinusoidal 500 A

= 1 µs, Tj < 150 °C,

< 47 A

30

60

200 V

175 °C

dV/dt Critical rate of rise reverse voltage 10000 V/µs

1. Refer to Figure 11

dPtot

2. condition to avoid thermal runaway for a diode on its own heatsink

dTj

Table 3. Thermal resistance parameters

<

Rth(j-a)

1

Symbol Parameter Value Unit

A

R

Junction to case

th (j-c)

R

Coupling 0.3

th (c)

Per diode
To t al

0.9

0.6

°C/W

When the diodes 1 and 2 are used simultaneously :

ΔT

(diode 1) = P(diode1) x R

j

Table 4. Static electrical characteristics (per diode)

(Per diode) + P(diode 2) x R

th(j-c)

th(c)

Symbol Parameter Tests conditions Min. Typ. Max. Unit

= 25 °C

(1)

I

R

VF

1. Pulse test: tp = 5 ms, δ < 2%

2. Pulse test: t

Reverse leakage current

(2)

Forward voltage drop

= 380 µs, δ < 2%

p

T

j

= 125 °C 16 60 mA

T

j

= 25 °C

T

j

T

= 125 °C 0.63 0.67

j

= 25 °C

T

j

Tj = 125 °C 0.76 0.80

V

= V

R

= 30 A

I

F

= 60 A

I

F

RRM

60 µA

0.84

V

0.92

To evaluate the conduction losses use the following equation :
P = 0.54 x I

F(AV)

+ 0.0043 I

F2(RMS)

2/7 Doc ID 11643 Rev 2

STPS61170C Characteristics

Figure 1. Average forward power dissipation

versus average forward current
(per diode)

P

(W)

F(AV)

30

25

20

15

10

5

0

0 5 10 15 20 25 30 35 40

d=0.05 d=0.1

I

F(AV)

d=0.2

(A)

d

=t /T

d=1

d=0.5

T

t

p

p

Figure 3. Normalized avalanche power

derating versus pulse duration

P(tp)

ARM

P(t)

ARM p

P (1µs)

ARM

P (1µs)

ARM

1

1

0.1

0.1

0.01

0.01

t (µs)

p

10 100 1000

10 100

t (µs)

p

1000

0.001

0.001

0.10.01 1

0.10.01 1

Figure 2. Average forward current versus

ambient temperature
(δ = 0.5, per diode)

I

(A)

F(AV)

35

30

25

20

15

10

5

0

T

t

=t /T

p

p

d

0 25 50 75 100 125 150 175

R

th(j-a)=Rth(j-c)

R

th(j-a)

=15°C/W

T

(°C)

amb

Figure 4. Normalized avalanche power

derating versus junction
temperature

P(T)

ARM j

P(t)

ARM p

P (25 °C)

ARM

1.2

P (25°C)

ARM

1.2

1

1

0.8

0.8

0.6

0.6

0.4

0.4

0.2

0.2

0

25

0

25 50 75 100 125

50 75 100 125 150

T (°C)

j

T (°C)

j

150

Figure 5. Non repetitive surge peak forward

current versus overload duration
(maximum values, per diode)

IM(A)

400

350

300

250

200

150

100

I

M

50

0

1.E-03 1.E-02 1.E-01 1.E+00

d=0.5

t

t(s)

TC=50°C

TC=75°C

TC=125°C

Doc ID 11643 Rev 2 3/7

Figure 6. Relative variation of thermal

impedance junction to case versus
pulse duration (per diode)

Z

th(j-c)/Rth(j-c)

1.0

0.9

0.8

0.7

d=0.5

0.6

0.5

d=0.2

0.4

d=0.1

0.3

0.2

Single pulse

0.1

0.0

1.E-03 1.E-02 1.E-01 1.E+00

tP(s)

T

=t /T

p

d

t

p

Characteristics STPS61170C

Figure 7. Reverse leakage current versus

reverse voltage applied
(typical values, per diode)

IR(µA)

1.E+05

1.E+04

1.E+03

1.E+02

1.E+01

1.E+00

1.E-01

0 10 20 30 40 50 60 70 80 90 100 110 120 130 140 150 160 170

Tj=150°C

Tj=125°C

Tj=100°C

Tj=75°C

Tj=50°C

Tj=25°C

VR(V)

Figure 9. Forward voltage drop versus

forward current
(per diode, low level)

IFM(A)

30

25

20

15

10

Tj=125°C

Tj=125°C

(Maximum values)

(Maximum values)

Tj=125°C

Tj=125°C

(Typical values)

(Typical values)

Tj=25°C

(Maximum values)

Figure 8. Junction capacitance versus

reverse voltage applied
(typical values, per diode)

C(pF)

10000

1000

100

1 10 100 1000

VR(V)

V

OSC

F=1MHz

=30mV

Tj=25°C

Figure 10. Forward voltage drop versus

forward current
(per diode, high level)

IFM(A)

1000

Tj=125°C

100

10

Tj=125°C

(Maximum values)

(Maximum values)

Tj=125°C

Tj=125°C

(Typical values)

(Typical values)

Tj=25°C

(Maximum values)

RMS

5

0

0.0 0.1 0.2 0.3 0.4 0.5 0.6 0.7 0.8 0.9 1.0

VFM(V)

1

0.0 0.1 0.2 0.3 0.4 0.5 0.6 0.7 0.8 0.9 1.0 1.1 1.2 1.3 1.4

Figure 11. Reverse safe operating area(tp < 1µs and Tj < 150 °C)

I(A)

arm

60

58

56

54

52

50

48

46

44

42

40

170 175 180 185 190 195 200 205 210 215 220

V (V)

arm

VFM(V)

4/7 Doc ID 11643 Rev 2

STPS61170C Package information

2 Package information

● Epoxy meets UL94,V0

● Cooling method: by conduction (C)

● Recommended torque value: 0.55 to 1.0 N·m

In order to meet environmental requirements, ST offers these devices in different grades of
ECOPACK
specifications, grade definitions and product status are available at: www.st.com
ECOPACK

Table 5. TO-247 dimensions

®

packages, depending on their level of environmental compliance. ECOPACK®

®

is an ST trademark.

.

Dimensions

Ref.

Millimeters Inches

Min. Max. Min. Max.

A 4.85 5.15 0.191 0.203

A1 2.20 2.60 0.086 0.102

b 1.00 1.40 0.039 0.055

Heat-sink plane

E

S

D

L1

L

11223

∅R

L2

b1

b2

b

e

A

b1 2.00 2.40 0.078 0.094

∅P

b2 3.00 3.40 0.118 0.133

c 0.40 0.80 0.015 0.031

(1)

D

19.85 20.15 0.781 0.793

E 15.45 15.75 0.608 0.620

e 5.45 typ. 0.215 typ.

3

c

A1

BACK VIEW

L 14.20 14.80 0.559 0.582

L1 3.70 4.30 0.145 0.169

L2 18.50 typ. 0.728 typ.

(2)

∅P

3.55 3.65 0.139 0.143

∅R 4.50 5.50 0.177 0.217

S 5.50 typ. 0.216 typ.

1. Dimension D plus gate protrusion does not exceed 20.5 mm

2. Resin thickness around the mounting hole is not less than 0.9 mm

Doc ID 11643 Rev 2 5/7

Ordering information STPS61170C

3 Ordering information

Table 6. Ordering information

Order code Marking Package Weight Base qty Delivery mode

STPS61170CW STPS61170CW TO-247 4.40 g 30 Tube

4 Revision history

Table 7. Document revision history

Date Revision Changes

16-Sep-2005 1 First issue.

01-Dic-2010 2 Updated Ta bl e 2 and added Figure 11.

6/7 Doc ID 11643 Rev 2

STPS61170C

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Doc ID 11643 Rev 2 7/7