Page 1
®
HIGH VOLTAGE POWER SCHOTTKY RECTIFIER
MAJOR PRODUCTS CHARACTERISTICS
I
F(AV)
V
RRM
Tj (max) 175°C
(max) 0.67 V
V
F
2x30A
150 V
STPS61150CW
A1
K
A2
FEATURES AND BENEFITS
HIGHJUNCTIONTEMPERATURECAPABILITY
■
LOW LEAKAGE CURRENT
■
GOOD TRADE OFF BETWEEN LEAKAGE
■
TO-247
A1
A2
K
CURRENT AND FORWARD VOLTAGE DROP
LOW THERMAL RESISTANCE
■
■ HIGH FREQUENCY OPERATION
DESCRIPTION
Dual center tap Schottky rectifiers suited for high
frequency switch mode power supply.
Packaged in TO-247, this devices is intended for
use to enhance the reliability of the application.
ABSOLUTE RATINGS (limiting values, per diode)
Symbol Parameter Value Unit
V
RRM
I
F(RMS)
I
F(AV)
I
FSM
P
ARM
T
stg
Tj
dV/dt
Repetitive peak reverse voltage
RMS forward current
Average forward current Tc = 150°C
δ = 0.5
Per diode
Per device
Surge non repetitive forward current tp = 10 ms Sinusoidal
Repetitive peak avalanche power tp = 1µs Tj = 25°C
Storage temperature range
Maximum operating junction temperature *
Critical rate of rise of reverse voltage
150 V
80 A
30
60
500 A
31800 W
- 65 to + 175 °C
175 °C
10000 V/µs
A
dPtot
*:
<
dTj Rth j a
October 2003 - Ed: 1A
thermal runaway condition for a diode on its own heatsink
−1()
1/5
Page 2
STPS61150CW
THERMAL RESISTANCES
Symbol Parameter Value Unit
R
th(j-c)
Junction to case
Per diode
Total
R
th(j-c)
Junction to case
Coupling 0.3 °C/W
When the diodes 1 and 2 are used simultaneously :
∆ Tj(diode 1) = P(diode1) x R
(Per diode) + P(diode 2) x R
th(j-c)
th(c)
STATIC ELECTRICAL CHARACTERISTICS (per diode)
Symbol Parameter Tests Conditions Min. Typ. Max. Unit
*
I
R
V
F
Pulse test : *tp = 380 µs, δ <2%
To evaluate the conduction losses use the following equation :
P=0.54xI
Reverse leakage
current
*
Forward voltage drop Tj = 25°CI
Tj = 25°C VR=V
Tj = 125°C
Tj = 125°C I
Tj=25°CI
Tj = 125°C I
+ 0.0043 I
F(AV)
F2(RMS)
=30A
F
=30A
F
=60A
F
=60A
F
RRM
0.9
°C/W
0.6
720µA
725mA
0.84 V
0.63 0.67
0.92
0.76 0.8
Fig. 1: Conduction losses versus average current
(per diode).
P (W)
F(AV)
30
25
20
15
10
5
0
0 5 10 15 20 25 30 35 40
δ = 0.05
δ = 0.1
δ = 0.2
I (A)
F(AV)
δ = 0.5
δ
=tp/T
δ = 1
T
tp
Fig. 3: Normalized avalanche power derating
versus junction temperature.
P(t)
ARM p
P (25°C)
ARM
1.2
1
0.8
0.6
0.4
0.2
0
25 50 75 100 125 150
T (°C)
j
Fig. 2: Normalized avalanche power derating
versus pulse duration.
P(t)
ARM p
P (1µs)
ARM
1
0.1
0.01
t (µs)
0.001
0.10.01 1
p
10 100 1000
Fig. 4: Average forward current versus ambient
temperature (δ=0.5, per diode).
I (A)
F(AV)
35
30
25
20
15
10
5
0
0 25 50 75 100 125 150 175
δ
=tp/T
T
tp
R=R
th(j-a) th(j-c)
R =15°C/W
th(j-a)
T (°C)
amb
2/4
Page 3
STPS61150CW
Fig. 5: Non repetitive surge peak forward current
versus overload duration (maximum values, per
diode).
I (A)
M
400
350
300
250
200
150
100
IM
50
0
1.E-03 1.E-02 1.E-01 1.E+00
δ=0.5
t
t(s)
T =50°C
c
T =75°C
c
T =125°C
c
Fig. 7: Reverse leakage current versus reverse
voltage applied (typical values, per diode).
I (µA)
R
1.E+05
T=150°C
1.E+04
1.E+03
1.E+02
1.E+01
1.E+00
1.E-01
10 30 50 70 90 110 130 150
j
T=125°C
j
T=100°C
j
T=75°C
j
T=50°C
j
T=25°C
j
V (V)
R
Fig. 6: Relative variation of thermal impedance
junction to case versus pulse duration.
Z/R
th(j-c) th(j-c)
1.0
0.9
0.8
0.7
δ = 0.5
0.6
0.5
0.4
δ = 0.2
δ = 0.1
0.3
0.2
Single pulse
0.1
0.0
1.E-03 1.E-02 1.E-01 1.E+00
t (s)
p
δ
=tp/T
T
tp
Fig. 8: Junction capacitance versus reverse
voltage applied (typical values, per diode).
C(pF)
10000
1000
V (V)
100
1 10 100 1000
R
F=1MHz
V =30mV
OSC RMS
T=25°C
j
Fig. 9: Forward voltage drop versus forward
current (per diode).
I (A)
FM
100.0
T=125°C
j
(maximum values)
T=125°C
j
10.0
1.0
0.1
0.0 0.1 0.2 0.3 0.4 0.5 0.6 0.7 0.8 0.9 1.0 1.1 1.2
(typical values)
V (V)
FM
T=25°C
j
(maximum values)
3/4
Page 4
STPS61150CW
PACKAGE MECHANICAL DATA
TO-247
V
V
H
L5
L
F2
F4
L1
F3
L3
F1
V2
F(x3)
G
= =
Dia.
L4L2
D
ME
A
DIMENSIONS
REF.
Millimeters Inches
Min. Typ. Max. Min. Typ. Max.
A 4.85 5.15 0.191 0.203
D 2.20 2.60 0.086 0.102
E 0.40 0.80 0.015 0.031
F 1.00 1.40 0.039 0.055
F1 3.00 0.118
F2 2.00 0.078
F3 2.00 2.40 0.078 0.094
F4 3.00 3.40 0.118 0.133
G 10.90 0.429
H 15.45 15.75 0.608 0.620
L 19.85 20.15 0.781 0.793
L1 3.70 4.30 0.145 0.169
L2 18.50 0.728
L3 14.20 14.80 0.559 0.582
L4 34.60 1.362
L5 5.50 0.216
M 2.00 3.00 0.078 0.118
V5° 5°
V2 60° 60°
Dia. 3.55 3.65 0.139 0.143
■ Cooling method : C
■
Recommended torque value : 0.8m.N
■
Maximum torque value : 1.0m.N
Ordering type Marking Package Weight Base qty Delivery mode
STPS61150CW STPS61150CW TO-247 4.4g 30 Tube
■
Epoxy meets UL94,V0
Informationfurnishedis believed to be accurate and reliable. However, STMicroelectronics assumes no responsibilityfortheconsequences of
useof such information nor for any infringement of patentsor other rights of third parties which may resultfromits use. No license is granted by
implication or otherwise under any patent or patent rights of STMicroelectronics. Specifications mentioned in this publication are subject to
change without notice. This publication supersedes and replaces all information previously supplied. STMicroelectronics products are not authorized for use as critical components in life support devices or systems without express written approval of STMicroelectronics.
The ST logo is a registered trademark of STMicroelectronics.
All other names are the property of their respective owners.
© 2003 STMicroelectronics - All rights reserved.
STMicroelectronics GROUP OF COMPANIES
Australia - Belgium - Brazil - Canada - China - Czech Republic - Finland - France - Germany -
Hong Kong - India - Israel - Italy - Japan - Malaysia - Malta - Morocco - Singapore - Spain -
Sweden - Switzerland - United Kingdom - United States
www.st.com
4/4
Loading...