Page 1
®
LOW DROP OR-ing POWER SCHOTTKY DIODE
MAJOR PRODUCT CHARACTERISTICS
I
F(AV)
V
RRM
Tj (max) 125°C
V
(max) 0.33 V
F
FEATURES AND BENEFITS
VERY LOW FORWARD VOLTAGE DROP FOR
■
LESS POWER DISSIPATION AND REDUCED
HEATSINK SIZE
OPERATION JUNCTION TEMPERATURE: 125°C
■
REVERSE VOLTAGE SUITED TO OR-ing OF
■
3V, 5V and 12V RAILS
AVALANCHE CAPABILITY SPECIFIED
■
DESCRIPTION
Dual center tap schottky rectifier packaged in
TO-247 and suited for N+1 redundancy
operations, this device has an optimized forward
voltage drop to reduce the power losses in the
application.
2x30A
15 V
STPS60L15CW
A1
K
A2
A2
K
A1
TO-247
ABSOLUTE RATINGS (limiting values, per diode)
Symbol Parameter Value Unit
V
RRM
I
F(RMS)
I
F(AV)
I
FSM
Repetitive peak reverse voltage
RMS forward current
Average forward current Tcase = 115°C
δ = 0.5
Surge non repetitive forward
tp = 10 ms Sinusoidal
Per diode
Per device
15 V
40 A
30 A
60
400 A
current
I
RRM
I
RSM
P
ARM
T
stg
T
dV/dt
dPtot
*:
Peak repetitive reverse current tp = 2µs F= 1kHz
Non repetitive peak reverse current tp = 100µs
Repetitive peak avalanche power tp = 1µs Tj = 25°C
Storage temperature range
j
Maximum operating junction temperature *
Critical rate of rise of reverse voltage
<
dTj Rth j a
July 2003 - Ed: 1A
thermal runaway condition for a diode on its own heatsink
−1()
2A
3A
24000 W
-65 to+150 °C
125 °C
10000 V/µs
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Page 2
STPS60L15CW
THERMAL RESISTANCES
Symbol Parameter Value Unit
R
th(j-c)
R
th(c)
When the diodes 1 and 2 are used simultaneously:
Tj(diode 1) = P (diode 1) x R
Junction to case
th(j-c)
(per diode) + P (diode 2) x R
th(c)
STATIC ELECTRICAL CHARACTERISTICS (Per diode)
Symbol Parameter Tests Conditions Min. Typ. Max. Unit
*
I
R
Reverse leakage current Tj = 25°C V
Tj = 100°C
V
*
F
Pulse test: * tp =380µs, δ <2%
Forward voltage drop Tj= 25°CI
Tj=25°CI
Tj = 125°C I
Tj = 125°C I
F
F
F
F
To evaluate the conduction losses use the following equation:
P=0.22xI
Fig. 1: Conduction losses versus average
current).
F(AV)
+ 0.0036 I
F2(RMS)
Fig. 2: Average forward current versus ambient
temperature (δ=0.5).
Per diode 0.8 °C/W
Total 0.55
Coupling 0.3 °C/W
R=VRRM
0.35 0.85 A
=30A
=60A
=30A
=60A
0.27 0.33
0.39 0.44
16 mA
0.41 V
0.49
P (W)
F(AV)
15.0
12.5
10.0
7.5
5.0
2.5
0.0
δ = 0.05
0 5 10 15 20 25 30 35 40
δ = 0.1
δ = 0.2
I (A)
F(AV)
δ = 0.5
δ
=tp/T
δ = 1
T
tp
Fig. 3: Normalized avalanche power derating
versus pulse duration.
P(t)
ARM p
P (1µs)
ARM
1
0.1
0.01
t (µs)
0.001
0.10.01 1
p
10 100 1000
I (A)
F(AV)
35
30
25
20
15
10
5
0
0 25 50 75 100 125
R=R
th(j-a) th(j-c)
R =15°C/W
th(j-a)
T (°C)
amb
Fig. 4: Normalized avalanche power derating
versus junction temperature.
P(t)
ARM p
P (25°C)
ARM
1.2
1
0.8
0.6
0.4
0.2
0
0 25 50 75 100 125 150
T (°C)
j
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Page 3
STPS60L15CW
Fig. 5: Non repetitive surge peak forward current
versus overload duration (maximum values).
I (A)
M
500
450
400
350
300
250
200
150
IM
100
50
0
1.E-03 1.E-02 1.E-01 1.E+00
δ=0.5
t
t(s)
T =25°C
C
T =50°C
C
T =100°C
C
Fig. 7: Reverse leakage current versus reverse
voltage applied (typical values).
I (mA)
R
1.E+04
T=125°C
1.E+03
1.E+02
j
T=100°C
j
T=75°C
j
Fig. 6: Relative variation of thermal impedance
junction to case versus pulse duration.
Z/R
th(j-c) th(j-c)
1.0
0.9
0.8
0.7
δ = 0.5
0.6
0.5
0.4
δ = 0.2
δ = 0.1
0.3
0.2
Single pulse
0.1
0.0
1.E-03 1.E-02 1.E-01 1.E+00
t (s)
p
δ
=tp/T
T
tp
Fig. 8: Junction capacitance versus reverse
voltage applied (typical values).
C(nF)
10.0
F=1MHz
V =30mV
OSC
T=25°C
j
T=50°C
1.E+01
1.E+00
0.0 2.5 5.0 7.5 10.0 12.5 15.0
j
T=25°C
j
V (V)
R
Fig. 9: Forward voltage drop versus forward
current.
I (A)
FM
1000
T=125°C
j
(maximum values)
100
T=125°C
j
(typical values)
T=25°C
j
10
1
0.0 0.2 0.4 0.6 0.8 1.0 1.2
(maximum values)
V (V)
FM
V (V)
1.0
1 10 100
R
3/4
Page 4
STPS60L15CW
PACKAGE MECHANICAL DATA
TO-247
DIMENSIONS
V
REF.
Millimeters Inches
Min. Typ. Max. Min. Typ. Max.
V
Dia.
A 4.85 5.15 0.191 0.203
D 2.20 2.60 0.086 0.102
E 0.40 0.80 0.015 0.031
H
A
F 1.00 1.40 0.039 0.055
F1 3.00 0.118
F2 2.00 0.078
L5
L
F3 2.00 2.40 0.078 0.094
F4 3.00 3.40 0.118 0.133
G 10.90 0.429
H 15.45 15.75 0.608 0.620
F1
V2
F(x3)
G
= =
F4
F3
F2
L3
L4L2
L1
D
ME
L 19.85 20.15 0.781 0.793
L1 3.70 4.30 0.145 0.169
L2 18.50 0.728
L3 14.20 14.80 0.559 0.582
L4 34.60 1.362
L5 5.50 0.216
M 2.00 3.00 0.078 0.118
V5° 5°
V2 60° 60°
Dia. 3.55 3.65 0.139 0.143
■
Cooling method: C
■
Recommended torque value: 0.8 m.N
■
Maximum torque value: 1.0 m.N
Ordering type Marking Package Weight Base qty Delivery mode
STPS60L15CW STPS60L15CW TO-247 4.4 g. 30 Tube
■
Epoxy meets UL94,V0
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implication or otherwise under any patent or patent rights of STMicroelectronics. Specifications mentioned in this publication are subject to
change without notice. This publication supersedes and replaces all information previously supplied.
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