Page 1
®
LOW DROP POWER SCHOTTKY RECTIFIER
MAIN PRODUCT CHARACTERISTIC S
I
F(AV)
V
RRM
Tj (max) 150° C
(max) 0.35 V
V
F
FEATURES AND BENEFITS
VERY LOW F O RW ARD VOLTAG E DROP FOR
LESS POWER DISSIPATION AND REDUCED
HEATSINK
OPTIMIZED CONDUCTION/REVERSE LOSSES
TRADE-OFF WHICH MEANS THE HIGHEST
EFFICIENCY IN THE APPLICATIONS
HIGH POWER SURFACE MOUNT MINIATURE
PACKAGE
AVALANCHE R ATE D
5 A
25 V
4
STPS5L25B
STPS5L25B/B-1
2
3
2
1
NC
DPAK
3
4(TAB)
4
IPAK
STPS5L25B-1
3
2
1
NC
DESCR IPT ION
Single Schottky rectifier suited t o Switched Mode
Power Supplies and high frequency DC to DC converters.
This device is especially intended for use as a Rectifier at the secondary of 3.3V SMPS units.
ABSOLUTE RATINGS
(limiting values)
Symbol Parameter Value Unit
V
RRM
I
F(RMS)
I
F(AV)
I
FSM
I
RRM
I
RSM
T
stg
Repetitive peak reverse voltage 25 V
RMS forward current 7 A
Average forward current Tc = 145°C
δ
= 0.5 5 A
Surge non repetitive forward current tp = 10 ms Sinus oidal 75 A
Repetitive peak reverse current tp=2 µs square F=1k Hz 1 A
Non repetitive peak reverse c urrent tp = 100 µs square 2 A
Storage temperature range - 65 to + 150
Tj Maximum operating junction temperature * 150
dV/dt Critical rate of rise of reverse voltage 10000 V/µs
* :
dPtot
dTj
<
1
Rth(j−a
thermal runaway condition for a diode on its own heatsink
)
°
C
°
C
August 1999 - Ed: 3A
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Page 2
STPS5L25B/B-1
THERMAL RESISTANCES
Symbol Parameter Value Unit
R
th(j-c)
Junction to case 2.5
STATIC ELECTRICAL CHARACTER ISTICS
Symbol Tests Conditions Tests Conditions Min. Typ. Max. Unit
* Reverse leakage current Tj = 25°CV
I
R
= V
R
RRM
350
Tj = 125°C 55 115 mA
* Forward voltage drop Tj = 25°CI
V
F
Tj = 125°CI
Tj = 25°CI
Tj = 125°CI
Pulse test : * tp = 380 µ s, δ < 2%
= 5 A 0.47 V
F
= 5 A 0.31 0.35
F
= 10 A 0.59
F
= 10 A 0.41 0.50
F
To evaluate the maximum conduction losses use the following equation :
P = 0.2 x I
F(AV)
+ 0.030 I
F2(RMS)
°
C/W
µ
A
Fig. 1:
Average forward power dissipation versus
average forward current.
PF(av)(W)
2.5
2.0
1.5
1.0
0.5
0.0
0123456
δ = 0.05
δ = 0.1
δ = 0.2
IF(av) (A)
δ = 0.5
δ
=tp/T
δ = 1
T
tp
Fig. 2:
Average forward current versus ambient
temperature (δ=0.5).
IF(av)(A)
6
5
4
δ
=tp/T
Rth(j-a)=70°C/W
T
tp
3
2
1
0
0 25 50 75 100 125 150
Rth(j-a)=Rth(j-c)
Tamb(°C)
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Page 3
STPS5L25B/B-1
Fig. 3:
Non repetitive surge peak forward current
versus overload duration (maximum values).
IM(A)
100
80
60
Tc=25°C
Tc=75°C
40
I
M
20
0
1E-3 1E-2 1E-1 1E+0
Fig. 5:
t
δ
=0.5
t(s)
Reverse leakage current versus reverse
Tc=100°C
voltage applied (typical values).
IR(mA)
3E+2
1E+2
1E+1
Tj=150°C
Tj=125°C
Fig. 4:
Relative variation of thermal impedance
junction to case versus pulse duration.
Zth(j-c)/Rth(j-c)
1.0
0.8
0.6
0.4
0.2
0.0
1.0E-4 1.0E-3 1.0E-2 1.0E-1 1.0E+0
Fig. 6:
δ = 0.5
δ = 0.1
δ = 0.2
Single pulse
tp(s)
δ
T
=tp/T
Junction capacitance versus reverse
tp
voltage applied (typical values).
C(pF)
2000
1000
F=1MHz
Tj=25°C
1E+0
1E-1
Tj=25°C
1E-2
VR(V)
1E-3
0 5 10 15 20 25
Fig. 7:
Forward voltage drop versus forward cur-
rent (maximum values).
IFM(A)
100.0
Typical values
Tj=150°C
10.0
1.0
0.1
0.0 0.2 0.4 0.6 0.8 1.0 1.2 1.4 1.6 1.8 2.0
Tj=125°C
Tj=25°C
VFM(V)
500
200
VR(V)
100
12 51 02 0 3 0
Fig. 8:
Thermal resistance junction to ambient versus copper surface under tab (Epoxy printed circuit
board FR4, copper thickness: 35µm).
Rth(j-a) (°C/W)
100
80
60
40
20
0
0 2 4 6 8 1 01 21 41 61 82 0
S(Cu) (cm²)
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Page 4
STPS5L25B/B-1
PACKAGE ME CHANICAL D AT A
DPAK
DIMENSIONS
REF.
Millimeters Inches
Min. Max Min. Max.
A 2.20 2.40 0.086 0.094
A1 0.90 1.10 0.035 0.043
A2 0.03 0.23 0.001 0.009
B 0.64 0.90 0.025 0.035
B2 5.20 5.40 0.204 0.212
C 0.45 0.60 0.017 0.023
C2 0.48 0.60 0.018 0.023
D 6.00 6.20 0.236 0.244
E 6.40 6.60 0.251 0.259
G 4.40 4.60 0.173 0.181
H 9.35 10.10 0.368 0.397
L2 0.80 typ. 0.031 typ.
L4 0.60 1.00 0.023 0.039
V2 0° 8° 0° 8°
FOOT PRINT DIMENSIONS
6.7
2.3 2.3
(in millimeters)
6.7
3
3
1.6 1.6
4/5
Page 5
PACKAGE ME CHANICAL D AT A
IPAK
E
B2
H
L1
L
B6
G
L2
B3
B
V1
B5
A1
C2
STPS5L25B/B-1
DIMENSIONS
REF.
A 2.2 2.4 0.086 0.094
A
A1 0.9 1.1 0.035 0.043
A3 0.7 1.3 0.027 0.051
B 0.64 0.9 0.025 0.035
B2 5.2 5.4 0.204 0.212
B3 0.85 0.033
D
B5 0.3 0.035
B6 0.95 0.037
C 0.45 0.6 0.017 0.023
C2 0.48 0.6 0.019 0.023
D 6 6.2 0.236 0.244
E 6.4 6.6 0.252 0.260
C
A3
G 4.4 4.6 0.173 0.181
H 15.9 16.3 0.626 0.641
L 9 9.4 0.354 0.370
L1 0.8 1.2 0.031 0.047
L2 0.8 1 0.031 0.039
V1 10° 10°
Millimeters Inches
Min. Typ. Max. Min. Typ. Max.
Ordering type Marking Package Weight Base qty Delivery mode
STPS5L25B STPS5L25B DPAK 0.30g 75 Tube
STPS15LB-TR STPS5L25B DPAK 0.30g 2500 Tape & reel
STPS5L25B-1 STPS5L25B IPAK 0.35g 75 Tube
Epoxy meets UL94,V0
Information furnished is believed to be accurate and reliable. However, STMicroelectronics assumes no responsibility for the consequences of
use of such information nor for any infringement of patents or other rights of third parties which may result from its use. No license is granted by
implication or oth erwise under any patent or patent rights of STMi croelectronics . Specifications mentioned i n this publication are subjec t to
change without notice. This publication supersedes and replaces all information previously supplied.
STMicroelectr oni cs products are n ot au thorized for use as critical components in life support devi ces or systems wi t hout express written approval of STMicroelectronics.
The ST logo is a registered trademark o f STMicroelectron ics
© 1999 STMicroelectronics - Printed in Italy - All rights reserved.
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