Dual center tab Schottky rectifier suited for 5V
output in off line AC/DC power supplies.
Packaged in D2PAK, I2PAK and TO-220AB this
device is intended for use in low voltage, high
frequency inverters, free-wheeling and polarity
protection applications.
A1
A2
A1
2
PAK
I
STPS41L45CR
K
STPS41L45CG
A2
K
D2PAK
K
TO-220AB
STPS41L45CT
A2
A1
A1
A2
K
ABSOLUTE RATINGS (limiting values, per diode)
SymbolParameterValueUnit
V
RRM
I
F(RMS)
I
F(AV)
I
FSM
I
RRM
P
ARM
T
stg
Tj
dV/dt
dPtot
*:
Repetitive peak reverse voltage
RMS forward current
Average forward currentTc = 130°C
Surge non repetitive forward currenttp = 10 ms sinusoidal
Peak repetitive reverse currenttp=2 µs square F=1kHz
Repetitive peak avalanche powertp = 1µsTj = 25°C
Storage temperature range
Maximum operating junction temperature *
Critical rate of rise reverse voltage
<
dTjRth ja
July 2003 - Ed : 3A
Per diode
δ = 0.5
Per device
thermal runaway condition for a diode on its own heatsink
−1()
45V
30A
20
40
220A
1A
10000W
-65 to+175°C
150°C
10000V/µs
A
1/6
Page 2
STPS41L45CG / STPS41L45CT / STPS41L45CR
THERMAL RESISTANCES
SymbolParameterValueUnit
R
th(j-c)
R
th(c)
Junction to case
Coupling
When the diodes 1 and 2 are used simultaneously :
∆ Tj(diode 1) = P(diode1) x R
(Per diode) + P(diode 2) x R
th(j-c)
STATIC ELECTRICAL CHARACTERISTICS (per diode)
SymbolParameterTests ConditionsMin.Typ.Max.Unit
Per diode
Total
th(c)
1.5
0.8
0.1
°C/W
*
I
R
Reverse leakage currentTj = 25°CV
R=VRRM
Tj = 125°C
V
*
F
Forward voltage dropTj = 25°CI
Tj = 125°CI
Tj=25°CI
Tj = 125°CI
=20A
F
=20A
F
=40A
F
=40A
F
Pulse test : * tp = 380 µs, δ <2%
To evaluate the conduction losses use the following equation :
P=0.28xI
Fig.1:Conductionlossesversus average current.
F(AV)
+ 0.0095 I
F2(RMS)
Fig. 2: Average forward current versus ambient
temperature (δ = 0.5).
1.2mA
110220mA
0.53V
0.420.47
0.68
0.600.66
PF(av)(W)
14
12
10
8
6
4
2
0
0 2 4 6 8 10121416182022242628
δ = 0.05
δ = 0.1
δ = 0.2
IF(av)(A)
δ = 0.5
δ
δ = 1
T
=tp/T
2/6
IF(av)(A)
25
20
15
10
5
tp
0
T
tp
=tp/T
δ
0255075100125150
Rth(j-a)=Rth(j-c)
Rth(j-a)=50°C/W
Tamb(°C)
Page 3
STPS41L45CG / STPS41L45CT / STPS41L45CR
Fig. 3: Normalized avalanche power derating
versus pulse duration.
P(t)
ARM p
P(1µs)
ARM
1
0.1
0.01
t (µs)
0.001
0.10.011
p
101001000
Fig. 5: Non repetitive surge peak forward current
versus overload duration (maximum values).
IM(A)
220
200
180
160
140
120
100
80
60
IM
40
20
0
1.E-031.E-021.E-011.E+00
δ=0.5
t
t(s)
Tc=25°C
Tc=75°C
Tc=125°C
Fig. 4: Normalized avalanche power derating
versus junction temperature.
P(t)
ARM p
P(25°C)
ARM
1.2
1
0.8
0.6
0.4
0.2
T (°C)
0
j
0255075100125150
Fig. 6: Relative variation of thermal impedance
junction to case versus pulse duration.
Zth(j-c)/Rth(j-c)
1.0
0.9
0.8
0.7
δ = 0.5
0.6
0.5
0.4
δ = 0.2
δ = 0.1
0.3
0.2
Single pulse
0.1
0.0
1.E-031.E-021.E-011.E+00
tp(s)
δ
=tp/T
T
tp
Fig. 7: Reverse leakage current versus reverse
voltage applied (typical values).
IR(mA)
1.E+03
Tj=150°C
1.E+02
1.E+01
1.E+00
1.E-01
1.E-02
051015202530354045
Tj=125°C
Tj=100°C
Tj=75°C
Tj=50°C
Tj=25°C
VR(V)
Fig. 8: Junction capacitance versus reverse voltage
applied (typical values).
C(nF)
10.0
1.0
VR(V)
0.1
110100
F=1MHz
Vosc=30mV
Tj=25°C
3/6
Page 4
STPS41L45CG / STPS41L45CT / STPS41L45CR
Fig.9: Forward voltagedrop versus forwardcurrent.
IFM(A)
100
Tj=125°C
Tj=125°C
(Maximum values)
(Maximum values)
Tj=125°C
Tj=125°C
(Typical values)
10
PACKAGE MECHANICAL DATA
D
(Typical values)
Tj=25°C
(Maximum values)
1
0.00.10.20.30.40.50.60.70.80.91.0
2
PAK
L2
L
L3
E
G
VFM(V)
A
C2
A1
B2
B
* FLAT ZONE NO LESS THAN 2mm
C
A2
M
*
R
V2
D
Fig. 10: Thermal resistance junction to ambient versus copper surface under tab (epoxy printed board
FR4, Cu = 35µm) (STPS41L45CG only).
Informationfurnishedis believed to be accurate and reliable. However, STMicroelectronics assumes no responsibilityforthe consequences of
useof such information nor for any infringement of patentsor other rights of third parties which mayresultfrom its use. No license is granted by
implication or otherwise under any patent or patent rights of STMicroelectronics. Specifications mentioned in this publication are subject to
change without notice. This publication supersedes and replaces all information previously supplied.
STMicroelectronics products are not authorized for use as critical components in life support devices or systems without express written
approval of STMicroelectronics.
The ST logo is a registered trademark of STMicroelectronics