Page 1
®
STPS41L30CG/CT/CR
LOW DROP POWER SCHOTTKY RECTIFIER
MAIN PRODUCTS CHARACTERISTICS
I
F(AV)
V
RRM
2x20A
30 V
Tj (max) 150 °C
V
(max) 0.38 V
F
FEATURES AND BENEFITS
VERY SMALL CONDUCTION LOSSES
■
NEGLIGIBLE SWITCHING LOSSES
■
EXTREMELY FAST SWITCHING
■
LOW FORWARD VOLTAGE DROP
■
HIGH AVALANCHE CAPABILITY
■
LOW THERMAL RESISTANCE
■
■ AVALANCHECAPABILITY SPECIFIED
DESCRIPTION
Dual center tab Schottky rectifier suited for Switch
Mode Power Supply and high frequency DC to DC
converters.
2
Packaged in D
PAK, I2PAK and TO-220ABthis
device is intended for use in low voltage, high
frequency inverters, free-wheeling and polarity
protection applications.
A1
A2
A1
2
PAK
I
STPS41L30CR
K
STPS41L30CG
A2
K
D2PAK
K
TO-220AB
STPS41L30CT
A2
A1
A1
A2
K
ABSOLUTE RATINGS (limiting values, per diode)
Symbol Parameter Value Unit
V
RRM
I
F(RMS)
I
F(AV)
I
FSM
I
RRM
P
ARM
T
stg
Tj
dV/dt
dPtot
*:
Repetitive peak reverse voltage
RMS forward current
Average forward current Tc = 135°C
Surge non repetitive forward current tp = 10 ms sinusoidal
Peak repetitive reverse current tp=2 µs square F=1kHz
Repetitive peak avalanche power tp = 1µs Tj = 25°C
Storage temperature range
Maximum operating junction temperature *
Critical rate of rise reverse voltage
<
dTj Rth j a
July 2003 - Ed : 3A
Per diode
δ = 0.5
Per device
thermal runaway condition for a diode on its own heatsink
−1()
30 V
30 A
20
40
220 A
1A
6500 W
-65 to+175 °C
150 °C
10000 V/µs
A
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Page 2
STPS41L30CG / STPS41L30CT / STPS41L30CR
THERMAL RESISTANCES
Symbol Parameter Value Unit
R
th(j-c)
R
th(c)
Junction to case
Coupling
When the diodes 1 and 2 are used simultaneously :
∆ Tj(diode 1) = P(diode1) x R
(Per diode) + P(diode2) x R
th(j-c)
STATIC ELECTRICAL CHARACTERISTICS (per diode)
Symbol Parameter Tests Conditions Min. Typ. Max. Unit
*
I
R
Reverse leakage current Tj = 25°C V
Tj = 125°C
V
*
F
Forward voltage drop Tj = 25°CI
Tj = 125°C I
Tj=25°CI
Tj = 125°C I
Pulse test : * tp = 380 µs, δ <2%
To evaluate the conduction losses use the following equation :
P=0.27xI
Fig.1:Conductionlossesversus average current.
F(AV)
+ 0.0055 I
F2(RMS)
Fig. 2: Average forward current versus ambient
temperature (δ = 0.5).
Per diode
th(c)
R=VRRM
=20A
F
=20A
F
=40A
F
=40A
F
Total
1.5
°C/W
0.8
0.1
1.5 mA
170 350 mA
0.48 V
0.35 0.38
0.57
0.47 0.49
PF(av)(W)
11
10
9
8
7
6
5
4
3
2
1
0
0 5 10 15 20 25
δ = 0.1
δ = 0.05
δ = 0.2
IF(av)(A)
δ = 0.5
δ
=tp/T
δ = 1
T
tp
Fig. 3: Normalized avalanche power derating
versus pulse duration.
P(t)
ARM p
P (1µs)
ARM
1
0.1
0.01
t (µs)
0.001
0.10.01 1
p
10 100 1000
IF(av)(A)
25
20
15
10
5
0
T
=tp/T
δ
0 25 50 75 100 125 150
Rth(j-a)=50°C/W
tp
Rth(j-a)=Rth(j-c)
Tamb(°C)
Fig. 4: Normalized avalanche power derating
versus junction temperature.
P(t)
ARM p
P (25°C)
ARM
1.2
1
0.8
0.6
0.4
0.2
0
0 25 50 75 100 125 150
T (°C)
j
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Page 3
STPS41L30CG / STPS41L30CT / STPS41L30CR
Fig. 5: Non repetitive surge peak forward current
versus overload duration (maximum values).
IM(A)
300
250
200
150
100
IM
50
0
1.E-03 1.E-02 1.E-01 1.E+00
δ=0.5
t
t(s)
Tc=25°C
Tc=75°C
Tc=125°C
Fig. 7: Reverse leakage current versus reverse
voltage applied (typical values).
IR(mA)
1.E+03
1.E+02
1.E+01
1.E+00
Tj=150°C
Tj=125°C
Tj=100°C
Tj=75°C
Tj=50°C
Fig. 6: Relative variation of thermal impedance
junction to case versus pulse duration.
Zth(j-c)/Rth(j-c)
1.0
0.9
0.8
0.7
δ = 0.5
0.6
0.5
0.4
δ = 0.2
δ = 0.1
0.3
0.2
Single pulse
0.1
0.0
1.E-03 1.E-02 1.E-01 1.E+00
tp(s)
δ
=tp/T
T
tp
Fig. 8: Junction capacitance versus reverse voltage
applied (typical values).
C(nF)
10.0
1.0
F=1MHz
Vosc=30mV
Tj=25°C
1.E-01
1.E-02
0 5 10 15 20 25 30
Tj=25°C
VR(V)
Fig.9: Forward voltagedrop versus forwardcurrent.
IFM(A)
100
Tj=125°C
Tj=125°C
(Maximum values)
(Maximum values)
Tj=125°C
Tj=125°C
(Typical values)
(Typical values)
10
1
0.0 0.1 0.2 0.3 0.4 0.5 0.6 0.7 0.8 0.9 1.0
Tj=25°C
(Maximum values)
VFM(V)
VR(V)
0.1
1 10 100
Fig. 10: Thermal resistance junction to ambient ver-
sus copper surface under tab (epoxy printed board
FR4, Cu = 35µm) (STPS41L30CG only).
Rth(j-a)(°C/W)
80
70
60
50
40
30
20
10
0
0 5 10 15 20 25 30 35 40
S(cm²)
3/6
Page 4
STPS41L30CG / STPS41L30CT / STPS41L30CR
PACKAGE MECHANICAL DATA
2
PAK
D
A
L2
E
L
L3
B2
B
G
* FLAT ZONE NO LESS THAN 2mm
A1
C2
D
C
A2
M
R
*
V2
DIMENSIONS
REF.
Millimeters Inches
Min. Max. Min. Max.
A 4.40 4.60 0.173 0.181
A1 2.49 2.69 0.098 0.106
A2 0.03 0.23 0.001 0.009
B 0.70 0.93 0.027 0.037
B2 1.14 1.70 0.045 0.067
C 0.45 0.60 0.017 0.024
C2 1.23 1.36 0.048 0.054
D 8.95 9.35 0.352 0.368
E 10.00 10.40 0.393 0.409
G 4.88 5.28 0.192 0.208
L 15.00 15.85 0.590 0.624
L2 1.27 1.40 0.050 0.055
L3 1.40 1.75 0.055 0.069
M 2.40 3.20 0.094 0.126
R 0.40 typ. 0.016 typ.
V2 0° 8° 0° 8°
FOOTPRINT (dimensions in mm)
16.90
10.30
8.90
3.70
5.08
1.30
4/6
Page 5
PACKAGE MECHANICAL DATA
2
PAK
I
E
L2
L1
L
e
b2
b1
b
c2
D
A1
STPS41L30CG / STPS41L30CT / STPS41L30CR
DIMENSIONS
REF.
A
A 4.40 4.60 0.173 0.181
A1 2.49 2.69 0.098 0.106
b 0.70 0.93 0.028 0.037
b1 1.14 1.17 0.044 0.046
b2 1.14 1.17 0.044 0.046
c 0.45 0.60 0.018 0.024
c2 1.23 1.36 0.048 0.054
D 8.95 9.35 0.352 0.368
e 2.40 2.70 0.094 0.106
E 10.0 10.4 0.394 0.409
L 13.1 13.6 0.516 0.535
c
L1 3.48 3.78 0.137 0.149
L2 1.27 1.40 0.050 0.055
Millimeters Inches
Min. Max. Min. Max.
5/6
Page 6
STPS41L30CG / STPS41L30CT / STPS41L30CR
PACKAGE MECHANICAL DATA
TO-220AB
A
C
L7
D
M
E
L2
F2
F1
H2
Dia
L5
L6
L9
L4
F
G1
G
DIMENSIONS
REF.
Millimeters Inches
Min. Max. Min. Max.
A 4.40 4.60 0.173 0.181
C 1.23 1.32 0.048 0.051
D 2.40 2.72 0.094 0.107
E 0.49 0.70 0.019 0.027
F 0.61 0.88 0.024 0.034
F1 1.14 1.70 0.044 0.066
F2 1.14 1.70 0.044 0.066
G 4.95 5.15 0.194 0.202
G1 2.40 2.70 0.094 0.106
H2 10 10.40 0.393 0.409
L2 16.4 typ. 0.645 typ.
L4 13 14 0.511 0.551
L5 2.65 2.95 0.104 0.116
L6 15.25 15.75 0.600 0.620
L7 6.20 6.60 0.244 0.259
L9 3.50 3.93 0.137 0.154
M 2.6 typ. 0.102 typ.
Diam. 3.75 3.85 0.147 0.151
Ordering type
STPS41L30CG
Marking
STPS41L30CG
STPS41L30CG-TR STPS41L30CG D
Package Weight Base qty Delivery mode
2
D
PAK 1.48 g 50 Tube
2
PAK 1.48 g 1000 Tape & reel
STPS41L30CT STPS41L30CT TO-220AB 2.20 g 50 Tube
STPS41L30CR STPS41L30CR I
■
EPOXY MEETS UL94,V0
Informationfurnishedis believed to be accurate and reliable. However, STMicroelectronics assumes no responsibilityforthe consequences of
useof such information nor for any infringement of patentsor other rights of third parties which mayresultfrom its use. No license is granted by
implication or otherwise under any patent or patent rights of STMicroelectronics. Specifications mentioned in this publication are subject to
change without notice. This publication supersedes and replaces all information previously supplied.
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© 2003 STMicroelectronics - Printed in Italy - All rights reserved.
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2
PAK 1.49 g 50 Tube
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