Datasheet STPS40M80C Datasheet (ST)

STPS40M80C

Power Schottky rectifier

Features

■ High junction temperature capability

■ Optimized trade-off between leakage current

and forward voltage drop

■ Low leakage current

■ Avalanche capability specified

Description

This dual diode Schottky rectifier is suited for high
frequency switch mode power supply.

Packaged in TO-220AB, I
device is particularly suited for use in notebook,
game station, LCD TV and desktop adapters,
providing these applications with a good
efficiency at both low and high load.

Table 1. Device summary

Symbol Value

I

F(AV)

V

RRM

(max) 175 °C

T

j

(typ) 475 mV

V

F

2

PAK and D2PAK, this

2 x 20 A

80 V

A1

K

A2

K

K

A2

K

A1

2

I

PAK

STPS40M80CR

A1

2

PAK

D

STPS40M80CG-TR

K

A2

K

A1

TO-220AB

STPS40M80CT

Figure 1. Electrical characteristics

2 x I

O

I

"Forward"

X

V

I

A2

(a)

I

F

I

V

RRM

V

V

a. V

ARM

operating area defined in Figure 11. V
pulse measurements (t
are static characteristics

AR

and I

R

"Reverse"

must respect the reverse safe

ARM

O

< 1 µs). VR, IR, V

p

I

R

V

To

I

AR

V

F(Io)

X

V

V

F(2xIo)

F

and IAR are

AR

and VF,

RRM

V

April 2011 Doc ID 018718 Rev 1 1/10

www.st.com

10

Characteristics STPS40M80C

1 Characteristics

Table 2. Absolute ratings (limiting values, per diode, at T

otherwise specified)

Symbol Parameter Value Unit

= 25 °C unless

amb

V

I

F(RMS)

I

F(AV)

I

FSM

P

ARM

V

ARM

V

ASM

T

1. For temperature or pulse time duration deratings, please refer to figure 3 and 4. More details regarding the
avalanche energy measurements and diode validation in the avalanche are provided in the application
notes AN1768 and AN2025.

2. See Figure 11

3. condition to avoid thermal runaway for a diode on its own heatsink

Table 3. Thermal parameters

Repetitive peak reverse voltage 80 V

RRM

Forward rms current 30 A

Average forward current, δ = 0.5

Surge non repetitive
forward current

(1)

Repetitive peak avalanche power Tj = 25 °C, tp = 1 µs 10000 W

Maximum repetitive peak

(2)

avalanche voltage

Maximum single pulse

(2)

peak avalanche voltage

Storage temperature range -65 to +175 °C

stg

Maximum operating junction temperature

T

j

<

Rth(j-a)

1

dPtot

dTj

= 10 ms sinusoidal Tc = 25 °C 200 A

t

p

< 1 µs, Tj < 150 °C, IAR < 30 A 100 V

t

p

< 1 µs, Tj < 150 °C, IAR < 30 A 100 V

t

p

Tc = 150 °C

= 150 °C

T

c

(3)

Per diode
Per device

20
40

175 °C

Symbol Parameter Value Unit

R

R

Junction to case

th(j-c)

Coupling 0.20 °C/W

th(c)

per diode 1.30

total 0.75

°C/W

A

When the two diodes 1 and 2 are used simultaneously:

ΔT

(diode 1) = P(diode 1) x R

j

2/10 Doc ID 018718 Rev 1

(Per diode) + P(diode 2) x R

th(j-c)

th(c)

STPS40M80C Characteristics

Table 4. Static electrical characteristics (per diode)

Symbol Parameter Test conditions Min. Typ. Max. Unit

(1)

I

R

V

Reverse leakage current

(2)

Forward voltage drop

F

1. Pulse test: tp = 5 ms, δ < 2 %

2. Pulse test: t

= 380 µs, δ < 2 %

p

= 25 °C

T

j

= 125 °C - 15 40 mA

T

j

T

= 25 °C

j

= 125 °C - 0.475 0.510

T

j

= 25 °C

T

j

= 125 °C - 0.570 0.635

T

j

= 25 °C

T

j

= 125 °C - 0.680 0.795

T

j

V

= V

R

I

= 10 A

F

I

= 20 A

F

I

= 40 A

F

RRM

-1565µA

- 0.550 0.600

- 0.655 0.735

- 0.800 0.920

To evaluate the conduction losses use the following equation:
P = 0.475 x I

Figure 2. Average forward power dissipation

versus average forward current
(per diode)

P (W)

F(AV)

22

20

18

16

14

12

10

8

6

4

2

0

T

δ = t / T

0 2 4 6 8 10121416182022242628

t

p

p

δ = 0.1

δ = 0.05

Figure 4. Normalized avalanche power

derating versus pulse duration

F(AV)

δ = 0.2

+ 0.008 x I

δ = 0.5

F2(RMS)

δ = 1

I (A)

F(AV)

Figure 3. Average forward current versus

ambient temperature
(δ = 0.5, per diode)

I (A)

F(AV)

24

22

20

18

16

14

12

10

8

6

4

2

0

0 25 50 75 100 125 150 175

R

th(j-a)

T (°C)

amb

= R

th(j-c)

Figure 5. Normalized avalanche power

derating versus junction
temperature

P(tp)

ARM

P (1µs)

ARM

1

P (25 °C)

1.2

1

P(T)

ARM j

ARM

V

0.1

0.01

0.001

0.10.01 1

10 100

0.8

0.6

0.4

0.2

T (°C)

t (µs)

p

1000

0

25 50 75 100 125

j

150

Doc ID 018718 Rev 1 3/10

Characteristics STPS40M80C

Figure 6. Non repetitive surge peak forward

current versus overload duration
(maximum values, per diode)

I (A)

M

260

240

220

200

180

160

140

120

100

80

60

I

M

40

20

0

1.E-03 1.E-02 1.E-01 1.E+00

t

δ = 0.5

T = 25 °C

c

T = 75 °C

c

T = 125 °C

c

t(s)

Figure 8. Reverse leakage current versus

reverse voltage applied
(typical values, per diode)

I (µA)

R

1.E+05

1.E+04

1.E+03

1.E+02

1.E+01

1.E+00
0 1020304050607080

T = 150 °C

j

T = 125 °C

j

T = 100 °C

j

T = 75 °C

j

T = 50 °C

j

T = 25 °C

j

V (V)

R

Figure 10. Forward voltage drop versus

forward current (per diode)

I (A)

FM

40

35

30

25

20

15

10

5

0

0.0 0.1 0.2 0.3 0.4 0.5 0.6 0.7 0.8 0.9 1.0

T = 125 °C

j

(Maximum values)

T = 125 °C

j

(Typical values)

T = 25 °C

j

(Maximum values)

V (V)

FM

Figure 7. Relative thermal impedance

junction to case versus pulse
duration

Z/R

th(j-c) th(j-c)

1.0

0.9

0.8

0.7

0.6

0.5

0.4

0.3

0.2

Single pulse

0.1

0.0

1.E-04 1.E-03 1.E-02 1.E-01 1.E+00

Figure 9. Junction capacitance versus

reverse voltage applied
(typical values, per diode)

C(pF)

10000

F = 1 MHz

V = 30 mV

osc RMS

T = 25 °C

j

1000

100

1 10 100

Figure 11. Reverse safe operating area

(t

< 1 µs and Tj < 150 °C)

p

I (A)

arm

30.0

29.0

28.0

27.0

26.0

25.0

24.0

23.0

22.0

21.0

20.0
100 105 110 115 120 125 130 135 140 145 150

I (V ) 150 °C, 1 µs

arm arm

V (V)

arm

t (s)

p

V (V)

R

4/10 Doc ID 018718 Rev 1

STPS40M80C Characteristics

Figure 12. Thermal resistance junction to ambient versus copper surface under tab for D2PAK

R (°C/W)

th(j-a)

80

70

60

50

40

30

20

10

0

0 5 10 15 20 25 30 35 40

epoxy printed board copper thickness = 35 µm

2

DPAK

S (cm )

Cu

2

Doc ID 018718 Rev 1 5/10

Package information STPS40M80C

2 Package information

● Epoxy meets UL94, V0

● Cooling method: by conduction (C)

● Recommended torque value: 0.4 to 0.6 N·m

In order to meet environmental requirements, ST offers these devices in different grades of
ECOPACK
specifications, grade definitions and product status are available at: www.st.com
ECOPACK

Table 5. TO-220AB dimensions

®

packages, depending on their level of environmental compliance. ECOPACK®

®

is an ST trademark.

.

Dimensions

Ref.

Millimeters Inches

Min. Max. Min. Max.

A 4.40 4.60 0.173 0.181

C 1.23 1.32 0.048 0.051

H2

Dia

A

C

D 2.40 2.72 0.094 0.107

E 0.49 0.70 0.019 0.027

L2

F2

F1

F

G1

L5

L9

L6

D

L4

M

E

F 0.61 0.88 0.024 0.034

L7

F1 1.14 1.70 0.044 0.066

F2 1.14 1.70 0.044 0.066

G 4.95 5.15 0.194 0.202

G1 2.40 2.70 0.094 0.106

H2 10 10.40 0.393 0.409

L2 16.4 Typ. 0.645 Typ.

L4 13 14 0.511 0.551

L5 2.65 2.95 0.104 0.116

G

L6 15.25 15.75 0.600 0.620

6/10 Doc ID 018718 Rev 1

L7 6.20 6.60 0.244 0.259

L9 3.50 3.93 0.137 0.154

M 2.6 Typ. 0.102 Typ.

Dia. 3.75 3.85 0.147 0.151

STPS40M80C Package information

Table 6. D

L2

L

L3

2

PAK dimensions

E

A1

B2

B

G

* FLAT ZONE NO LESSTHAN 2mm

Dimensions

Ref.

Millimeters Inches

Min. Max. Min. Max.

A 4.40 4.60 0.173 0.181

A

A1 2.49 2.69 0.098 0.106

C2

A2 0.03 0.23 0.001 0.009

B 0.70 0.93 0.027 0.037

D

B2 1.14 1.70 0.045 0.067

C 0.45 0.60 0.017 0.024

C2 1.23 1.36 0.048 0.054

C

R

D 8.95 9.35 0.352 0.368

E 10.00 10.40 0.393 0.409

A2

G 4.88 5.28 0.192 0.208

L 15.00 15.85 0.590 0.624

M

*

V2

L2 1.27 1.40 0.050 0.055

L3 1.40 1.75 0.055 0.069

M 2.40 3.20 0.094 0.126

R 0.40 typ. 0.016 typ.

V2 0° 8° 0° 8°

Figure 13. D2PAK footprint (dimensions in mm)

16.90

10.30

8.90

5.08

1.30

3.70

Doc ID 018718 Rev 1 7/10

Package information STPS40M80C

Table 7. I2PAK dimensions

Dimensions

L2

Ref.

Millimeters Inches

Min. Max. Min. Max.

A

E

c2

A 4.40 4.60 0.173 0.181

A1 2.40 2.72 0.094 0.107

b 0.61 0.88 0.024 0.035

D

b1 1.14 1.70 0.044 0.067

c 0.49 0.70 0.019 0.028

L1

L

b1

A1

c2 1.23 1.32 0.048 0.052

D 8.95 9.35 0.352 0.368

e 2.40 2.70 0.094 0.106

e1 4.95 5.15 0.195 0.203

b

e

e1

c

E 10 10.40 0.394 0.409

L 13 14 0.512 0.551

L1 3.50 3.93 0.138 0.155

L2 1.27 1.40 0.050 0.055

8/10 Doc ID 018718 Rev 1

STPS40M80C Ordering information

3 Ordering information

Table 8. Ordering information

Order code Marking Package Weight Base qty Delivery mode

STPS40M80CT STPS40M80CT TO-220AB 1.9 g 50 Tube

STPS40M80CR STPS40M80CR I2PAK 1.49 g 50 Tube

STPS40M80CG-TR STPS40M80CG D

2

PAK 1.48 g 1000 Tape and reel

4 Revision history

Table 9. Revision history

Date Revision Changes

11-Apr-2011 1 First issue.

Doc ID 018718 Rev 1 9/10

STPS40M80C

Please Read Carefully:

Information in this document is provided solely in connection with ST products. STMicroelectronics NV and its subsidiaries (“ST”) reserve the
right to make changes, corrections, modifications or improvements, to this document, and the products and services described herein at any
time, without notice.

All ST products are sold pursuant to ST’s terms and conditions of sale.

Purchasers are solely responsible for the choice, selection and use of the ST products and services described herein, and ST assumes no
liability whatsoever relating to the choice, selection or use of the ST products and services described herein.

No license, express or implied, by estoppel or otherwise, to any intellectual property rights is granted under this document. If any part of this
document refers to any third party products or services it shall not be deemed a license grant by ST for the use of such third party products
or services, or any intellectual property contained therein or considered as a warranty covering the use in any manner whatsoever of such
third party products or services or any intellectual property contained therein.

UNLESS OTHERWISE SET FORTH IN ST’S TERMS AND CONDITIONS OF SALE ST DISCLAIMS ANY EXPRESS OR IMPLIED
WARRANTY WITH RESPECT TO THE USE AND/OR SALE OF ST PRODUCTS INCLUDING WITHOUT LIMITATION IMPLIED
WARRANTIES OF MERCHANTABILITY, FITNESS FOR A PARTICULAR PURPOSE (AND THEIR EQUIVALENTS UNDER THE LAWS
OF ANY JURISDICTION), OR INFRINGEMENT OF ANY PATENT, COPYRIGHT OR OTHER INTELLECTUAL PROPERTY RIGHT.

UNLESS EXPRESSLY APPROVED IN WRITING BY AN AUTHORIZED ST REPRESENTATIVE, ST PRODUCTS ARE NOT
RECOMMENDED, AUTHORIZED OR WARRANTED FOR USE IN MILITARY, AIR CRAFT, SPACE, LIFE SAVING, OR LIFE SUSTAINING
APPLICATIONS, NOR IN PRODUCTS OR SYSTEMS WHERE FAILURE OR MALFUNCTION MAY RESULT IN PERSONAL INJURY,
DEATH, OR SEVERE PROPERTY OR ENVIRONMENTAL DAMAGE. ST PRODUCTS WHICH ARE NOT SPECIFIED AS "AUTOMOTIVE
GRADE" MAY ONLY BE USED IN AUTOMOTIVE APPLICATIONS AT USER’S OWN RISK.

Resale of ST products with provisions different from the statements and/or technical features set forth in this document shall immediately void
any warranty granted by ST for the ST product or service described herein and shall not create or extend in any manner whatsoever, any
liability of ST.

ST and the ST logo are trademarks or registered trademarks of ST in various countries.

Information in this document supersedes and replaces all information previously supplied.

The ST logo is a registered trademark of STMicroelectronics. All other names are the property of their respective owners.

© 2011 STMicroelectronics - All rights reserved

STMicroelectronics group of companies

Australia - Belgium - Brazil - Canada - China - Czech Republic - Finland - France - Germany - Hong Kong - India - Israel - Italy - Japan -

Malaysia - Malta - Morocco - Philippines - Singapore - Spain - Sweden - Switzerland - United Kingdom - United States of America

www.st.com

10/10 Doc ID 018718 Rev 1