Schottky rectifier suited for Switched Mode Power
Supplies andhighfrequencyDCtoDCconverters.
Packaged in SMC, this device is intended for use
in DC/DC chargers.
SMC
(JEDEC DO-214AB)
ABSOLUTE RATINGS (limiting values)
SymbolParameterValueUnit
V
RRM
I
F(RMS)
I
F(AV)
I
FSM
I
RRM
P
ARM
T
Tj
dV/dt
Repetitive peak reverse voltage
RMS forward current
Average forward currentTc = 100°C δ = 0.5
Surge non repetitive forward currenttp = 10 ms Sinusoidal
Repetitive peak reverse currenttp=2µssquare F=1kHz
Repetitive peak avalanche powertp = 1µsTj = 25°C
stg
Storage temperature range
Maximum operating junction temperature *
Critical rate of rise of reverse voltage
60V
10A
3A
75A
1A
1600W
-65 to+175°C
150°C
10000V/µs
dPtot
*:
<
dTjRth ja
July 2003 - Ed: 2A
thermal runaway condition for a diode on its own heatsink
−1()
1/5
Page 2
STPS3L60S
THERMAL RESISTANCES
SymbolParameterValueUnit
R
th(j-l)
Junction to leads
STATIC ELECTRICAL CHARACTERISTICS
SymbolParameterTests conditionsMin.Typ.Max.Unit
*
I
R
Reverse leakage currentTj = 25°CV
R=VRRM
Tj = 125°C
V
*
F
Forward voltage dropTj = 25°CI
Tj = 125°CI
Tj=25°CI
Tj = 125°CI
=3A
F
=3A
F
=6A
F
=6A
F
Pulse test : * tp = 380 µs, δ <2%
To evaluate the conduction losses use the following equation :
P=0.54xI
F(AV)
+ 0.037 I
F2(RMS)
20°C/W
55µA
1015mA
0.7V
0.560.65
0.94
0.670.76
Fig. 1: Average forward power dissipation versus
average forward current.
PF(av)(W)
2.5
2.0
1.5
1.0
0.5
0.0
0.00.51.01.52.02.53.03.54.0
δ = 0.05
δ = 0.1
IF(av) (A)
δ = 0.2
δ = 0.5
δ
=tp/T
δ = 1
T
tp
Fig. 2: Average forward current versus ambient
temperature(δ = 0.5).
IF(av)(A)
3.5
3.0
2.5
2.0
1.5
δ
=tp/T
T
tp
1.0
0.5
0.0
0255075100125150
Rth(j-a)=Rth(j-l)
Rth(j-a)=75°C/W
Tamb(°C)
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Page 3
STPS3L60S
Fig. 3: Normalized avalanche power derating
versus pulse duration.
P(t)
ARM p
P(1µs)
ARM
1
0.1
0.01
t (µs)
0.001
0.10.011
p
101001000
Fig. 5: Non repetitive surge peak forward
current versus overload duration (maximum
values).
IM(A)
14
12
10
8
6
4
IM
2
0
1E-31E-21E-11E+0
δ=0.5
t
t(s)
Tc=25°C
Tc=50°C
Tc=100°C
Fig. 4: Normalized avalanche power derating
versus junction temperature.
P(t)
ARM p
P(25°C)
ARM
1.2
1
0.8
0.6
0.4
0.2
0
0255075100125150
T (°C)
j
Fig. 6: Relative variation of thermal impedance
junction to lead versus pulse duration.
Zth(j-l)/Rth(j-l)
1.0
0.9
0.8
0.7
δ = 0.5
0.6
0.5
δ = 0.2
0.4
0.3
δ = 0.1
0.2
Single pulse
0.1
0.0
1E-31E-21E-11E+0
tp(s)
δ
=tp/T
T
tp
Fig. 7: Reverse leakage current versus reverse
voltage applied (typical values).
IR(mA)
5E+1
1E+1
1E+0
1E-1
1E-2
1E-3
05 10 15 20 25 30 35 40 45 50 55 60
Tc=150°C
Tc=125°C
Tc=100°C
Tc=75°C
Tc=50°C
Tc=25°C
VR(V)
Fig. 8: Junction capacitance versus reverse
voltage applied (typical values).
C(pF)
500
200
100
50
20
VR(V)
10
110100
F=1MHz
Tj=25°C
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Page 4
STPS3L60S
Fig. 9-1: Forward voltage drop versus forward
current (low level, maximum values).
IFM(A)
5.0
4.5
4.0
Tj=150°C
(typical values)
Tj=25°C
3.5
3.0
2.5
Tj=125°C
2.0
1.5
1.0
0.5
0.0
0.0 0.1 0.2 0.3 0.4 0.5 0.6 0.7 0.8 0.9 1.0
VFM(V)
Fig. 10: Thermal resistance junction to ambient
versus copper surface under each lead (Epoxy
printedcircuit board FR4, copper thickness: 35µm)
Rth(j-a) (°C/W)
100
80
Fig. 9-2: Forward voltage drop versus forward
current (high level, maximum values).
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