High voltage dual Schottky rectifier suited for
switchmode power supplies and other power
converters.
Packaged in TO-247, this device is intended for
use in mediumvoltage operation, and particularly,
in high frequency circuitries where low switching
losses and low noiseare required.
ABSOLUTE RATINGS (limiting values, per diode)
A1
K
A2
A2
K
A1
TO-247
STPS3060CW
SymbolParameterValueUnit
V
RRM
I
F(RMS)
I
F(AV)
I
FSM
Repetitive peak reverse voltage
RMS forward currentPer diode
Average forward currentδ = 0.5Tc = 130°CPer diode
Per device
Surge non repetitive forwardcurrenttp = 10 ms
Per diode
60V
30A
15
30
200A
Sinusoidal
I
RRM
Repetitive peak reverse currenttp=2µs
Per diode
1A
F=1kHz
I
RSM
T
Tj
dV/dt
dPtot
*:
Non repetitive peak reverse currenttp = 100µsPer diode
stg
Storage temperature range
Maximum operating junction temperature *
Critical rate of rise of reverse voltage
<
dTjRth ja
October 2003 - Ed: 1A
thermal runaway condition for a diode on its own heatsink
−1()
1A
- 65 to + 150°C
150°C
1000V/µs
A
1/4
Page 2
STPS3060CW
THERMAL RESISTANCES
SymbolParameterValueUnit
R
th(j-c)
R
th(c)
Junction to case
When the diodes 1 and 2 are used simultaneously :
∆ Tj(diode 1) = P(diode1) x R
(Per diode) + P(diode 2) x R
th(j-c)
STATIC ELECTRICAL CHARACTERISTICS (per diode)
SymbolParameterTests ConditionsMin.Typ.Max.Unit
Per diode
Total
1.5
0.8
°C/W
Coupling0.1°C/W
th(c)
*
I
R
V
F
Reverse leakage
current
*
Forward voltage dropTj = 25°CI
Tj = 25°CVR=V
Tj = 125°C
Tj = 125°CI
Tj=25°CI
Tj = 125°CI
=15A
F
=15A
F
=30A
F
=30A
F
RRM
Pulse test: * tp = 5ms, δ <2%
**tp = 380µs, δ <2%
To evaluate the maximum conduction losses use the following equation :
P=0.6xI
Fig. 1: Conduction losses versus average current
(per diode).
P(W)
F(AV)
16
14
12
10
8
6
4
2
0
02468101214161820
F(AV)
δ = 0.05
+ 0.01 I
δ = 0.1
F2(RMS)
δ = 0.2
I(A)
F(AV)
δ = 0.5
δ
δ = 1
=tp/T
Fig. 2: Average forward current versus ambient
temperature (δ=0.5, per diode).
I(A)
F(AV)
17
16
15
14
13
12
11
10
9
8
7
6
5
T
tp
4
3
2
=tp/T
1
δ
0
0255075100125150
150µA
100mA
0.85V
0.650.75
1.05
0.800.90
R=R
th(j-a) th(j-I)
R =15°C/W
th(j-a)
T
T(°C)
tp
amb
2/4
Page 3
STPS3060CW
Fig. 3: Non repetitive surge peak forward current
versus overload duration (maximum values, per
diode).
I (A)
M
160
140
120
100
T =50°C
80
60
40
IM
20
0
1.E-031.E-021.E-011.E+00
δ=0.5
t
t(s)
C
T =75°C
C
T =110°C
C
Fig. 5: Reverse leakage currrent versus reverse
voltage applied (typical values, per diode).
I (mA)
R
1.E+01
T=125°C
j
1.E+00
T=100°C
j
Fig. 4: Relative variation of thermal impedance
junction to case versus pulse duration.
Z/R
th(j-c) th(j-c)
1.0
0.9
0.8
0.7
δ = 0.5
0.6
0.5
0.4
δ = 0.2
δ = 0.1
0.3
0.2
Single pulse
0.1
0.0
1.E-031.E-021.E-011.E+00
t (s)
p
δ
=tp/T
T
tp
Fig. 6: Junction capacitance versus reverse
voltage applied (typical values, per diode).
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