Datasheet STPS140Z Datasheet (SGS Thomson Microelectronics)

Page 1
MAINPRODUCTCHARACTERISTICS
STPS140Z
POWER SCHOTTKY RECTIFIER
I
F
V
V
(max) 0.49 V
F
1A
40 V
Tj (max) 150°C
FEATURESAND BENEFITS
VERYSMALL CONDUCTION LOSSES NEGLIGIBLESWITCHING LOSSES EXTREMELYFASTSWITCHING
DESCRIPTION
Single Schottky rectifier suited for Switchmode PowerSuppliesand highfrequencyDCto DC con­verters.
Packaged in SOD123, this device is intended for use in low voltage, high frequency inverters, free wheelingand polarity protection applications.Due tothesmallsizeofthe packagethis devicefit GSM andPCMCIA requirements.
ABSOLUTE RATINGS(limitingvalues)
SOD123
Symbol Parameter Value Unit
V
RRM
I
I
FSM
Repetitivepeak reversevoltage 40 V Continuousforwardcurrent
F
T
=60°C1A
amb
Surgenon repetitiveforwardcurrent tp = 10 ms
5.5 A
Sinusoidal
I
Repetitivepeak reversecurrent tp = 2 µs square
0.5 A
F = 1kHz
I
RSM
T
stg
Nonrepetitive peak reversecurrent tp = 100µs square 1 A Storagetemperaturerange - 65 to + 150 °C
Tj Maximumoperatingjunction temperature* 150
T
Maximumtemperaturefor solderingduring 10s 260 °C
L
dV/dt Criticalrate of riseof reverse voltage 10000 V/µs
dPtot
*
dTj
May 1999 - Ed:1
<
Rth(j−a
1
Thermal runawaycondition fora diode onits own heatsink.
)
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STPS140Z
THERMALRESISTANCES
Symbol Parameter Value Unit
R
th (j-a)
* with 50 mm2copper area (e=35µm)
Junctionto ambient* 175 °C/W
STATICELECTRICALCHARACTERISTICS
Symbol Tests Conditions TestsConditions Min. Typ. Max. Unit
* Reverse leakage current Tj = 25°CV
I
R
Tj = 25°CV
=5V 10 µA
R
=40V 40 µA
R
Tj = 100°C 1.5 5 mA
** Forwardvoltagedrop Tj = 25°CI
V
F
= 1 A 0.55 V
F
Tj = 100°C 0.45 0.51
Pulse test : * tp = 5 ms, δ <2%
** tp = 380µs, δ <2%
To evaluatethe maximum conductionlossesuse thefollowing equation: P = 0.2 x I
F(AV)
+ 0.3 x I
F2(RMS)
atTj = 150°C
Fig. 1: Average forward power dissipationversus averageforwardcurrent.
PF(av)(W)
0.6
0.5
0.4
0.3
0.2
0.1
0.0
δ = 0.05
0.0 0.1 0.2 0.3 0.4 0.5 0.6 0.7 0.8 0.9 1.0 1.1
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δ = 0.1
δ = 0.2
IF(av)(A)
δ= 0.5
δ
=tp/T
δ =1
T
tp
Fig. 2: Average forward current versus ambient temperature(δ=1).
IF(av)(A)
1.2
1.0
0.8
0.6
0.4
0.2
0.0 0 25 50 75 100 125 150
δ
=tp/T
T
tp
Tamb(°C)
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STPS140Z
Fig. 3:
Non repetive surge peak forward current
versusover l oaddur ati on(maxim umvalues) .
IM(A)
5
4
3
2
IM
1
0
1E-3 1E-2 1E-1 1E+0
Fig. 5:
δ=0.5
t
t(s)
Reverse leakage current versus reverse
Ta=25°C
Ta=60°C
voltageapplied (typicalvalue).
IR(mA)
5E+1 1E+1
1E+0
1E-1 1E-2 1E-3 1E-4
0 5 10 15 20 25 30 35 40
Tj=150°C
Tj=100°C
Tj=70°C
Tj=25°C
VR(V)
Fig.4:
Relativevariationofthermalimpedancejunction to ambientversus pulse duration (epoxy printedcircuit boardFR4withrecommendedpadlayout).
Zth(j-a)/Rth(j-a)
1E+0
δ= 0.5
δ = 0.2
δ= 0.1
1E-1
T
Single pulse
1E-2
tp(s)
1E-2 1E-1 1E+0 1E+1 5E+1
Fig. 6:
Reverse leakage current versus junction
δ
=tp/T
tp
temperature(typicalvalue).
IR[Tj] / IR[Tj=25°C]
5E+3 1E+3
1E+2
1E+1
1E+0
1E-1
VR=40V
Tj(°C)
0 25 50 75 100 125 150
Fig. 7: Junction capacitance versus reverse voltageapplied (typicalvalue).
C(pF)
200
100
50
20
VR(V)
10
12 51020 50
F=1MHz
Tj=25°C
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STPS140Z
Fig. 8-1:
Forward voltage drop versus forward
current(high level, maximumvalues).
IFM(A)
5E+0
1E+0
1E-1
Tj=150°C
Tj=25°C
Tj=100°C
VFM(V)
1E-2
0.0 0.1 0.2 0.3 0.4 0.5 0.6 0.7 0.8 0.9 1.0 1.1 1.2
Fig. 9:
Thermal resistance junction to ambient versuscoppe r surface(epoxy printed circuit board FR4,copper thickness:35µm).
Fig. 8-2:
Forward voltage drop versus forward
current(low level,maximum values).
IFM(A)
2.0
1.8
1.6
1.4
1.2
1.0
0.8
0.6
Tj=150°C
0.4
0.2
0.0
0.0 0.1 0.2 0.3 0.4 0.5 0.6 0.7 0.8 0.9 1.0
VFM(V)
Tj=25°C
Tj=100°C
Rth(j-a) (°C/W)
300 280 260 240 220 200 180 160 140 120 100
0 102030405060708090100
S(Cu) (mm )
IF=1A
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PACKAGEMECHANICAL DATA
SOD123Plastic
H
b
E
D
c
G
A2
STPS140Z
DIMENSIONS
REF.
A1
A 1.45 0.057 A1 0 0.1 0 0.004 A2 0.85 1.35 0.033 0.053
A
b 0.55 Typ. 0.022 Typ.
c 0.15 Typ. 0.039 Typ.
D 2.55 2.85 0.1 0.112
E 1.4 1.7 0.055 0.067
G 0.25 0.01 H 3.55 3.95 0.14 0.156
Millimeters Inches
Min. Max. Min. Max.
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