VERY SMALL CONDUCTION LOS SES
NEGLIGIBLE SWITCHING LOSS ES
LOW FORWARD VOLTA GE DROP
SURFACE MOUNTED DE VICE
DESCR IPTIO N
Single chip Schottky rectifier suited for Switchmode Power Supplies and high frequency DC to
DC converters.
Packaged in SMA and SMB(*), this device is intended for surface mounting and used in low voltage, high frequency inverters, free wheeling and
polarity protection applications.
(*) in accordance with DO214AAand DO21AC JEDEC
ABSOLUTE RATINGS (limiting values)
SMA
STPS140A
SMB
STPS140U
SymbolParameterValueUnit
V
RRM
I
F(RMS)
I
F(AV)
I
FSM
Repetitive peak reverse voltage40V
RMS forward current7A
Average forward current
Surge non repetitive forward currenttp = 10 ms
δ
= 0.5 SMATL = 130°C1A
SMBT
= 135°C
L
60A
Sinusoidal
I
RRM
Repetitive peak reverse currenttp = 2 µs
1A
F = 1kHz
I
RSM
T
stg
Non repetitive peak reverse currenttp = 100µs square1A
Storage temperature range- 65 to + 150
TjMaximum junction temperature150
dV/dtCritical rate of rise of reverse voltage10000V/µs
To evaluate the maximum conduction losses use the following equation :
P = 0.4 x I
F(AV)
+ 0.10 x I
F2(RMS)
C/W
µ
A
Fig. 1:
Average forward power dissipation versus
average forward current.
PF(av)(W)
0.7
0.6
0.5
0.4
0.3
0.2
0.1
0.0
0.00.20.40.60.81.01.2
δ = 0.05
2/6
= 0.1δ
IF(av) (A)
= 0.2δ
= 0.5δ
= 1δ
T
=tp/T
δ
Fig. 2:
Average forward current versus ambient
temperature (δ=0.5).
IF(av)(A)
1.2
1.0
0.8
0.6
0.4
tp
0.2
0.0
0255075100125150
δ
T
=tp/T
SMA
Rth(j-a)=100°C/W
S(Cu)=1.5cm²
tp
SMB
Rth(j-a)=80°C/W
S(Cu)=1.5cm²
Tamb(°C)
Rth(j-a)=Rth(j-l)
STPS140A/U
Fig. 3-1:
Non repetivesurge peak forward current
versus ove rload duration (maximum va lues) (SMB).
IM(A)
8
7
6
5
4
3
2
I
M
1
0
1E-31E-21E-11E+0
Fig. 4-1:
t
δ
=0.5
t(s)
Relative variation of thermal impedance
Ta=25°C
Ta=50°C
Ta=100°C
junction to ambient versus pulse duration (SMB).
Zth(j-a)/Rth(j-a)
1.0
Printed circuit board: SCu=1.5cm (e=35µm)
0.9
0.8
0.7
0.6
= 0.5δ
0.5
0.4
0.3
= 0.2δ
0.2
= 0.1δ
0.1
0.0
1E-21E-1
2
Single pulse
1E+0
tp(s)
1E+11E+2
δ
=tp/T
T
tp
1E+3
Fig. 3-2:
Non repetivesurge peak forward current
versus ov erload dura tion (maximum v alues) (SMA).
IM(A)
8
7
6
5
Ta=25°C
4
3
2
I
M
1
0
1E-31E-21E-11E+0
Fig. 4-2:
t
δ
=0.5
t(s)
Relative variation of thermal impedance
Ta=50°C
Ta=100°C
junction to ambient versus puls e dur ation (S MA).
Zth(j-a)/Rth(j-a)
1.0
Printed circuit board: SCu=1.5cm (e=35µm)
0.9
0.8
0.7
0.6
= 0.5δ
0.5
0.4
0.3
= 0.2δ
0.2
= 0.1δ
0.1
0.0
1E-21E-11E+01E+11E+2
2
Single pulse
tp(s)
δ
=tp/T
T
tp
Fig. 5:
Reverse leakage current versus reverse
voltage applied (typical values).
IR(µA)
1E+3
1E+2
1E+1
1E+0
1E-1
1E-2
Tj=125°C
Tj=75°C
Tj=25°C
VR(V)
0510152025303540
Fig. 6:
Junction capacitance versus reverse
voltage applied (typical values)
C(pF)
200
100
50
20
VR(V)
10
1251020 50
F=1MHz
Tj=25°C
3/6
STPS140A/U
Fig. 7:
Forward voltage drop versus forward
current (maximum values).
IFM(A)
1E+1
Tj=125°C
1E+0
1E-1
1E-2
0.0 0.1 0.2 0.3 0.4 0.5 0.6 0.7 0.8 0.9 1.0
Fig. 8-2:
Thermal resistance junction to ambient
VFM(V)
versus copper surface under each lead (Epoxy
printed circui t board, copper th ickness: 35µm)(SMA ).
Rth(j-a) (°C/W)
140
120
100
80
60
40
20
0
012345
S(Cu) (cm²)
P=1.5W
Fig. 8-1:
Thermal resistance junction to ambient
versus copper surface under each lead (Epoxy
printed circ uit board, copper thickness : 35µm)(SM B).
Rth(j-a) (°C/W)
120
100
80
60
40
20
0
012345
S(Cu) (cm²)
P=1.5W
4/6
PACKAGE MECHANICAL DAT A
SMA
STPS140A/U
DIMENSIONS
C
FOOT PRINT
E1
E
L
(in millimeters)
REF.
MillimetersInches
Min.Max.Min.Max.
A11.902.700.0750.106
D
A20.050.200.0020.008
b1.251.650.0490.065
c0.150.410.0060.016
E4.805.600.1890.220
A1
A2
b
E13.954.600.1560.181
D2.252.950.0890.116
L0.751.600.0300.063
Marking:
S140
1.451.45
2.40
1.65
5/6
STPS140A/U
PACKAGE MECHANICAL DAT A
SMB Plastic
DIMENSIONS
C
FOOT PRINT
E1
E
L
(in millimeters)
REF.
MillimetersInches
Min.Max.Min.Max.
A11.902.450.0750.096
D
A20.050.200.0020.008
b1.952.200.0770.087
c0.150.410.0060.016
E5.105.600.2010.220
A1
A2
b
E14.054.600.1590.181
D3.303.950.1300.156
L0.751.600.0300.063
Marking:
G14
2.3
1.522.75
Information furnished is believed to be accurate and reliable. However, STMicroelectronics assumes no responsibility for the consequences of
use of such information nor for any infringement of patents or other rights of third parties which may result from its use. No license is granted by
implication or oth erwise under any patent or patent rights of STMi croelectronics . Specifications mentioned i n this publication are subjec t to
change without notice. This publication supersedes and replaces all information previously supplied.
STMicroelectr oni cs products are n ot authorized for use as critical component s in life support devi ces or systems wi t hout express written approval of STMicroelectronics.