Page 1
MAINPRODUCTCHARACTERISTICS
STPS130A/U
SCHOTTKYRECTIFIER
I
F(AV)
V
RRM
(max) 0.46V
V
F
1A
30 V
FEATURES AND BENEFITS
LOW DROP FORWARD VOLTAGE FOR LESS
POWERDISSIPATIONAND LOWLEAKAGE
OPTIMIZED CONDUCTION / REVERSE
LOSSES TRADE-OFF ALLOWING THE HIGHESTEFFICIENCYINAPPLICATION
SURFACEMOUNTMINIATUREPACKAGE
DESCRIPTION
Single Schottky rectifier suited to Switched Mode
Power Supplies and high frequency DC/DC converters.
Packaged in SMA or SMB(*), this device is especiallyintended for usein parallel with MOSFETsin
synchronous rectification and low voltage secondaryrectification.
(*)in accordance with DO214AAand DO214AC JEDEC
ABSOLUTERATINGS (limitingvalues)
SMA
STPS130A
SMB
STPS130U
Symbol Parameter Value Unit
V
RRM
I
F(RMS)
I
F(AV)
Repetitivepeak reverse voltage 30 V
RMSforwardcurrent 7 A
Averageforward current TL= 135°C
1A
δ = 0.5
I
FSM
Surgenon repetitive forward current tp = 10ms
45 A
Sinusoidal
I
RRM
Repetitivepeak reverse current tp =2µs
1A
F =1kHz
I
RSM
T
stg
Non repetitivepeak reversecurrent tp = 100µs square 1 A
Storagetemperaturerange - 65 to + 150 °C
Tj Maximumjunction temperature 150
dV/dt Criticalrate of riseof reversevoltage 10000 V/µs
July 1998 - Ed: 5A
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STPS130A/U
THERMALRESISTANCES
Symbol Parameter Value Unit
R
th (j-l)
Junctionto lead SMA 30 °C/W
SMB 25
STATIC ELECTRICAL CHARACTERISTICS
Symbol Tests Conditions Tests Conditions Min. Typ. Max. Unit
* Reverseleakagecurrent Tj = 25°CV
I
R
=30V 10 µA
R
Tj = 125°C 1.5 10 mA
** Forwardvoltage drop Tj = 25°CI
V
F
Tj = 125°CI
Tj=25°CI
Tj = 125°CI
Pulse test : * tp= 380 µs, δ <2%
** tp= 5ms,δ <2%
= 1 A 0.55 V
F
= 1 A 0.37 0.46
F
= 2 A 0.63
F
= 2 A 0.45 0.55
F
To evaluatethe maximum conductionlossesuse the followingequation:
P = 0.37 x I
F(AV)
+ 0.090x I
F2(RMS)
Fig. 1:
Averageforward power dissipationversus
averageforwardcurrent.
PF(av)(W)
0.6
0.5
0.4
0.3
0.2
0.1
0.0
0.0 0.2 0.4 0.6 0.8 1.0 1.2
δ= 0.05
2/6
δ = 0.1 δ= 0.2
IF(av) (A)
δ = 0.5
δ
δ =1
T
=tp/T
Fig. 2:
Average forward current versus ambient
temperature(δ=0.5).
IF(av)(A)
1.2
1.0
0.8
0.6
0.4
tp
0.2
0.0
0 25 50 75 100 125 150
T
=tp/T tp
δ
Rth(j-a)=100°C/W
Tamb(°C)
Rth(j-a)=Rth(j-l)
Page 3
STPS130A/U
Fig. 3-1: Nonrepetitivesurgepeakforwardcurrent
versusoverloadduration(maximumvalues)(SMB).
IM(A)
8
7
6
5
Ta=50°C
Ta=75°C
4
3
IM
2
1
0
1.0E-3 1.0E-2 1.0E-1 1.0E+0
δ=0.5
t
t(s)
Ta=100°C
Fig.4-1: Relative variationof thermal impedance
junction to ambient versus pulseduration(epoxy
printedcircuitboard,S(Cu)=35mm,recommended
padlayout).(SMB)
Zth(j-a)/Rth(j-a)
1.0
Fig. 3-2: Nonrepetitivesurgepeakforwardcurrent
versusoverloadduration(maximumvalues)(SMA).
IM(A)
8
7
6
5
Ta=50°C
Ta=75°C
4
3
2
IM
1
0
1.0E-3 1.0E-2 1.0E-1 1.0E+0
δ=0.5
t
Ta=100°C
t(s)
Fig.4-2: Relative variationofthermalimpedance
junction to ambient versus pulse duration(epoxy
printedcircuitboard,S(Cu)=35mm,recommended
pad layout).(SMA)
Zth(j-a)/Rth(j-a)
1.0
0.8
0.6
δ = 0.5
0.4
δ = 0.2
0.2
δ = 0.1
0.0
1.0E-2 1.0E-1 1.0E+0 1.0E+1 1.0E+2 1.0E+3
Single pulse
tp(s)
δ
=tp/T
T
tp
Fig. 5: Reverse leakage current versus reverse
voltageapplied (typicalvalues).
IR(µA)
5E+3
1E+3
1E+2
1E+1
1E+0
1E-1
0 5 10 15 20 25 30
Tj=125°C
Tj=70°C
Tj=25°C
VR(V)
0.8
0.6
δ = 0.5
0.4
δ
=tp/T
T
tp
δ = 0.2
0.2
δ = 0.1
0.0
1E-2 1E-1 1E+0 1E+1 1E+2 1E+3
Single pulse
tp(s)
Fig. 6: Junction capacitance ve rsus reverse
voltage applied(typicalvalues).
C(pF)
500
F=1MHz
200
100
50
20
VR(V)
10
12 5102030
Tj=25°C
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Page 4
STPS130A/U
Fig. 7:
Forward voltage drop versus forward cur-
rent(maximum values).
IFM(A)
10.00
1.00
0.10
0.01
0.0 0.2 0.4 0.6 0.8 1.0 1.2
Fig. 8-2:
Tj=75°C
Tj=125°C
Tj=25°C
VFM(V)
Thermal resistance junction to ambient
versus coppe r surface under each lead (Epoxy
printed circuit board, copper thickness:
35µm).(SMA)
Rth(j-a) ( °C/W)
140
120
100
80
60
40
20
0
012345
S(Cu) (cm )
P=1.5W
Fig. 8-1:
Thermal resistance junction to ambient
versus copper surface under each lead (Epoxy
printed circuit board, copper thickness:
35µm).(SMB)
Rth(j-a) ( °C/W)
120
100
80
60
40
20
0
012345
S(Cu) (cm )
P=1.5W
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Page 5
PACKAGEMECHANICAL DATA
SMA
STPS130A/U
DIMENSIONS
C
FOOTPRINT
E1
E
L
(in millimeters)
REF.
Millimeters Inches
Min. Max. Min. Max.
A1 1.90 2.70 0.075 0.106
D
A2 0.05 0.20 0.002 0.008
b 1.25 1.65 0.049 0.065
c 0.15 0.41 0.006 0.016
E 4.80 5.60 0.189 0.220
A1
A2
b
E1 3.95 4.60 0.156 0.181
D 2.25 2.95 0.089 0.116
L 0.75 1.60 0.030 0.063
Marking:S130
Cathodeband indicatescathode
1.45 1.45
2.40
1.65
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STPS130A/U
PACKAGEMECHANICAL DATA
SMB
DIMENSIONS
REF.
E1
A1 1.90 2.45 0.075 0.096
D
A2 0.05 0.20 0.002 0.008
b 1.95 2.20 0.077 0.087
c 0.15 0.41 0.006 0.016
E
E 5.10 5.60 0.201 0.220
A1
C
L
A2
b
E1 4.05 4.60 0.159 0.181
D 3.30 3.95 0.130 0.156
L 0.75 1.60 0.030 0.063
FOOTPRINT (in millimeters) Marking:
Cathodeband indicatescathode
Millimeters Inches
Min. Max. Min. Max.
G12
2.3
1.52 2.75
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1.52
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