Datasheet STPS130 Datasheet (ST)

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Table 1: Main Product Characteristics

F(AV)

RRM

1 A

30 V

Tj (max) 150°C

(max) 0.46 V

STPS130

POWER SCHOTTKY RECTIFIER

FEATURES AND BENEFITS

■ Very low forward voltage drop for less power

dissipation

■ Optimized conduction/reverse losses trade-off

(JEDEC DO-214AC)

SMA

STPS130A

SMB

(JEDEC DO-214AA)

STPS130U

which means the highest yield in the applications

■ Surface mount miniature packages

■ Avalanche capability specified

DESCRIPTION

Single Schottky rectifier suited to Switched Mode Power Supplies and high frequency DC to DC converters.

Table 2: Order Codes

Part Number Marking

STPS130A S130 STPS130U G12

Packaged in SMA and SMB, this device is especially intended for use in parallel with MOSFETs in synchronous rectification and low voltage secondary rectification.

Table 3: Absolute Ratings (limiting values)

Symbol Parameter Value Unit

RRM

F(RMS)

F(AV)

FSM

RRM

RSM

ARM

Repetitive peak reverse voltage 30 V

RMS forward voltage 7 A

Average forward current

TL = 130°C δ = 0.5

Surge non repetitive forward current tp = 10ms sinusoidal 45 A

Repetitive peak reverse current tp = 2µs F = 1kHz square 1 A

Non repetitive peak reverse current tp = 100µs square 1 A

Repetitive peak avalanche power tp = 1µs Tj = 25°C 1200 W

Storage temperature range -65 to + 150 °C

stg

Maximum operating junction temperature * 150 °C

dV/dt Critical rate of rise of reverse voltage 10000 V/µs

dPtot

---------------

* : thermal runaway condition for a diode on its own heatsink

dTj

--------------- ----------->

Rth j a–()

August 2004

REV. 5

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STPS130

Table 4: Thermal Resistance

Symbol Parameter Value Unit

th(j-l)

Junction to lead

Table 5: Static Electrical Characteristics

Symbol Parameter Tests conditions Min. Typ Max. Unit

= 25°C

IR *

Reverse leakage current

Tj = 125°C

Tj = 25°C

VF **

Pulse test: * tp = 380 µs, δ < 2%

To evaluate the conduction losses use the following equation: P = 0.37 x I

Forward voltage drop

** tp = 5 ms, δ < 2%

Tj = 125°C

= 25°C

= 125°C

= V

IF = 1A

IF = 2A

F(AV)

SMA 30 SMB 23

RRM

0.37 0.46

0.45 0.55

+ 0.090 I

F2(RMS)

°C/W

1.5 10

0.55

0.63

µA

Figure 1: Average forward power dissipation versus average forward current

P (W)

F(AV)

0.6

0.5

0.4

0.3

0.2

0.1

0.0

0.0 0.2 0.4 0.6 0.8 1.0 1.2

δ = 0.05

δ = 0.1

I (A)

F(AV)

δ = 0.2

δ = 0.5

=tp/T

δ = 1

Figure 3: Normalized avalanche power derating versus pulse duration

P(t)

ARM p

P (1µs)

ARM

0.1

0.01

t (µs)

0.001

0.10.01 1

10 100 1000

Figure 2: Average forward current versus ambient temperature (δ = 0.5)

I (A)

F(AV)

1.2

1.0

0.8

R =100°C/W

T (°C)

amb

th(j-a)

0.6

0.4

0.2

0.0 0 25 50 75 100 125 150

=tp/T

R=R

th(j-a) th(j-I)

Figure 4: Normalized avalanche power derating versus junction temperature

P(t)

ARM p

P (25°C)

ARM

1.2

0.8

0.6

0.4

0.2

25 50 75 100 125 150

T (°C)

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STPS130

Figure 5: Non repetitive surge peak forward current versus overload duration (maximum values) (SMA)

I (A)

1.0E-3 1.0E-2 1.0E-1 1.0E+0

=0.5

t(s)

T =50°C

T =75°C

T =100°C

Figure 7: Relative variation of thermal impedance junction to ambient versus pulse duration (epoxy printed circuit board, e(Cu)=35µm, recommended pad layout) (SMA)

Z/R

th(j-c) th(j-c)

1.0

Figure 6: Non repetitive surge peak forward current versus overload duration (maximum values) (SMB)

I (A)

1.0E-3 1.0E-2 1.0E-1 1.0E+0

=0.5

t(s)

T =50°C

T =75°C

T =100°C

Figure 8: Relative variation of thermal impedance junction to ambient versus pulse duration (epoxy printed circuit board, e(Cu)=35µm, recommended pad layout) (SMB)

Z/R

th(j-c) th(j-c)

1.0

0.8

0.6

δ = 0.5

0.4

δ = 0.2

0.2

δ = 0.1

Single pulse

0.0 1E-2 1E-1 1E+0 1E+1 1E+2 1E+3

t (s)

=tp/T

Figure 9: Reverse leakage current versus reverse voltage applied (typical values)

I (µA)

5E+3

T =125°C

1E+3

1E+2

1E+1

1E+0

1E-1

0 5 10 15 20 25 30

T =70°C

T =25°C

V (V)

0.8

0.6

δ = 0.5

0.4

δ = 0.2

0.2

δ = 0.1

Single pulse

0.0

1.0E-2 1.0E-1 1.0E+0 1.0E+1 1.0E+2 1.0E+3

t (s)

=tp/T

Figure 10: Junction capacitance versus reverse voltage applied (typical values)

C(pF)

500

200

100

V (V)

12 5102030

F=1MHz T =25°C

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STPS130

Figure 11: Forward voltage drop versus forward current (maximum values)

I (A)

10.00

T =75°C

T =125°C

T =25°C

V (V)

1.00

0.10

0.01

0.0 0.2 0.4 0.6 0.8 1.0 1.2

Figure 13: Thermal resistance junction to ambient versus copper surface under each lead (Epoxy printed circuit board FR4, copper thickness: 35µm) (SMB)

R (°C/W)

th(j-a)

140

120

100

012345

S(Cu)(cm²)

P=1.5W

Figure 12: Thermal resistance junction to ambient versus copper surface under each lead (Epoxy printed circuit board FR4, copper thickness: 35µm) (SMA)

R (°C/W)

th(j-a)

120

100

S(Cu)(cm²)

012345

P=1.5W

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Figure 14: SMA Package Mechanical Data

STPS130

DIMENSIONS

Figure 15: SMA Foot Print Dimensions

(in millimeters)

REF.

Millimeters Inches

Min. Max. Min. Max.

A1 1.90 2.03 0.075 0.080

A2 0.05 0.20 0.002 0.008

b 1.25 1.65 0.049 0.065

c 0.15 0.41 0.006 0.016

E 4.80 5.60 0.189 0.220

E1 3.95 4.60 0.156 0.181

D 2.25 2.95 0.089 0.116

L 0.75 1.60 0.030 0.063

1.45 1.45

2.40

1.65

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STPS130

Figure 16: SMB Package Mechanical Data

DIMENSIONS

Figure 17: SMB Foot Print Dimensions

(in millimeters)

REF.

Millimeters Inches

Min. Max. Min. Max.

A1 1.90 2.45 0.075 0.096

A2 0.05 0.20 0.002 0.008

b 1.95 2.20 0.077 0.087

c 0.15 0.41 0.006 0.016

E 5.10 5.60 0.201 0.220

E1 4.05 4.60 0.159 0.181

D 3.30 3.95 0.130 0.156

L 0.75 1.60 0.030 0.063

1.52 2.75

2.3

1.52

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Table 6: Ordering Information

Ordering type Marking Package Weight Base qty Delivery mode

STPS130A S130 SMA 0.068 g 5000 Tape & reel

STPS130U G12 SMB 0.107 g 2500 Tape & reel

■ Band indicates cathode

■ Epoxy meets UL94, V0

Table 7: Revision History

Date Revision Description of Changes

Jul-2003 4A Last update.

Aug-2004 5

SMA package dimensions update. Reference A1 max. changed from 2.70mm (0.106inc.) to 2.03mm (0.080).

STPS130

Information furnished is believed to be accurate and reliable. However, STMicroelectronics assumes no responsibility for the consequences of use of such information nor for any infringement of patents or other rights of third parties which may result from its use. No license is granted by implication or otherwise under any patent or patent rights of STMicroelectronics. Specifications mentioned in this publication are subject to change without notice. This publication supersedes and replaces all information previously supplied. STMicroelectronics products are not authorized for use as critical components in life support devices or systems without express written approval of STMicroelectronics.

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