Datasheet STPS120M Datasheet (ST)

®

Table 1: Main Product Characteristics

I

V

T

j

V

F

F(AV)

RRM

(max)

(max)

1 A

20 V

150°C

0.41 V

STPS120M

POWER SCHOTTKY RECTIFIER

A

C

FEATURES AND BENEFITS

■ Very small conduction losses

■ Negligible switching losses

■ Extremely fast switching

■ Low forward voltage drop for higher efficiency

STmite

(DO216-AA)

and extented battery life

■ Low thermal resistance

■ Avalanche capability specified

DESCRIPTION

Table 2: Order Code

Part Number Marking

STPS120M 120

Single Schottky rectifier suited for switch mode
power supplies and high frequency DC to DC
converters.
Packaged in STmite, this device is intended for
use in low voltage, high frequency inverters, free
wheeling and polarity protection applications. Due
to the small size of the package this device fits
battery powered equipment (cellular, notebook,
PDA’s, printers) as well chargers and PCMCIA
cards.

Table 3: Absolute Ratings (limiting values)

Symbol Parameter Value Unit

V

RRM

I

F(RMS)

I

F(AV)

I

FSM

P

ARM

T

T

dV/dt

dPtot

* : thermal runaway condition for a diode on its own heatsink

------------- --

dTj

Repetitive peak reverse voltage 20 V

RMS forward voltage 2 A

T

Average forward current

= 140°C δ = 0.5

c

Surge non repetitive forward current tp = 8.3 ms sinusoidal 50 A

Repetitive peak avalanche power tp = 1µs Tj = 25°C 1400 W

Storage temperature range -65 to + 150 °C

stg

Maximum operating junction temperature * 150 °C

j

Critical rate of rise of reverse voltage (rated V

1

--------------- ----------->

Rth j a

–()

, Tj = 25°C)

R

10000 V/µs

1A

September 2004

REV. 3

1/6

STPS120M

Table 4: Thermal Resistance

Symbol Parameter Value Unit

*

R

th(j-c)

R

th(j-l)

* Mounted with minimum recommended pad size, PC board FR4.

Table 5: Static Electrical Characteristics

Symbol Parameter Tests conditions Min. Typ Max. Unit

I

R

V

Junction to case 20 °C/W

* Junction to ambient

*

Reverse leakage current

*

Forward voltage drop

F

T

= 25°C

j

T

= 100°C

j

T

= 25°C VR = 10V

j

T

= 100°C

j

= 25°C VR = 5V

T

j

= 100°C

T

j

= 25°C

T

j

T

= 100°C

j

= 25°C

T

j

T

= 100°C

j

V

R

I

F

I

F

= V

= 1A

= 3A

RRM

250

1.3 3.9

275 850

0.6 2.0

145 450

0.4 1.0

105 300

0.44 0.49

0.36 0.41

0.48 0.54

0.42 0.48

°C/W

µA

V

Pulse test: * tp = 380 µs, δ < 2%

To evaluate the conduction losses use the following equation: P = 0.34 x I

Figure 1: Conduction losses versus average
current

P (W)

F(AV)

0.6

0.5

0.4

0.3

0.2

0.1

0.0

0.0 0.1 0.2 0.3 0.4 0.5 0.6 0.7 0.8 0.9 1.0 1.1 1.2

δ = 0.05

δ = 0.1

I (A)

F(AV)

δ = 0.2

δ = 0.5

=tp/T

δ

δ = 1

T

tp

+ 0.07 I

F(AV)

F2(RMS)

Figure 2: Average forward current versus
ambient temperature (δ = 0.5)

I (A)

F(AV)

1.2

1.1

1.0

0.9

0.8

0.7

0.6

0.5

0.4

0.3

0.2

0.1

=tp/T

δ

0.0

0 25 50 75 100 125 150

R =270°C/W

th(j-a)

T

T (°C)

tp

amb

R=R

th(j-a) th(j-c)

2/6

STPS120M

Figure 3: Normalized avalanche power
derating versus pulse duration

P(t)

ARM p

P (1µs)

ARM

1

0.1

0.01

t (µs)

0.001

0.10.01 1

p

10 100 1000

Figure 5: Non repetitive surge peak forward
current versus overload duration (maximum
values)

I (A)

M

22

20

18

16

14

12

10

8

6

4

I

M

2

0

1.E-03 1.E-02 1.E-01 1.E+00

t

δ

=0.5

t(s)

T =25°C

C

T =75°C

C

T =125°C

C

Figure 4: Normalized avalanche power
derating versus junction temperature

P(t)

ARM p

P (25°C)

ARM

1.2

1

0.8

0.6

0.4

0.2

0

25 50 75 100 125 150

T (°C)

j

Figure 6: Relative variation of thermal
impedance junction to ambient versus pulse
duration

Z/R

th(j-c) th(j-c)

1.0

0.9

0.8

0.7

0.6

δ = 0.5

0.5

0.4

0.3

δ = 0.2

0.2

δ = 0.1

0.1

Single pulse

0.0

1.E-04 1.E-03 1.E-02 1.E-01

t (s)

p

δ

=tp/T

T

tp

Figure 7: Reverse leakage current versus
reverse voltage applied (typical values)

I (mA)

R

1.E+01

T =150°C

j

1.E+00

1.E-01

1.E-02

1.E-03

1.E-04

02468101214161820

T =125°C

j

T =100°C

j

T =75°C

j

T =50°C

j

T =25°C

j

V (V)

R

Figure 8: Junction capacitance versus reverse
voltage applied (typical values)

C(pF)

1000

100

V (V)

10

110100

R

F=1MHz

V =30mV

OSC RMS

T =25°C

j

3/6

STPS120M

Figure 9: Forward voltage drop versus forward
current (low level)

I (A)

FM

2.0

1.8

1.6

1.4

1.2

1.0

0.8

0.6

0.4

0.2

0.0

0.0 0.1 0.2 0.3 0.4 0.5 0.6

(maximum values)

T =100°C

j

(typical values)

T =100°C

j

T =25°C

j

(maximum values)

V (V)

FM

Figure 11: Thermal resistance junction to
ambient versus copper surface under tab
(epoxy printed board FR4, Cu = 35µm, typical
values)

R (°C/W)

th(j-a)

300

250

Figure 10: Forward voltage drop versus
forward current (high level)

I (A)

FM

100.0

T =100°C

j

10.0

1.0

0.1

0.0 0.2 0.4 0.6 0.8 1.0 1.2 1.4

(maximum values)

T =100°C

j

(typical values)

T =25°C

j

(maximum values)

V (V)

FM

200

150

100

50

0

0.0 0.2 0.4 0.6 0.8 1.0 1.2 1.4 1.6 1.8 2.0

S(cm²)

4/6

Figure 12: STmite Package Mechanical Data

L3

D

b2

H

C

R1

b

L2

L

R

A

A1

0° to 6°

STPS120M

DIMENSIONS

REF.

A 0.85 1.00 1.15 0.033 0.039 0.045

A1 -0.05 0.05 -0.002 0.002

b 0.40 0.65 0.016 0.025

b2 0.70 1.00 0.027 0.039

c 0.10 0.25 0.004 0.010

D 1.75 1.90 2.05 0.069 0.007 0.081

E

E 1.75 1.90 2.05 0.069 0.007 0.081
H 3.60 3.75 3.90 0.142 0.148 0.154

L 0.50 0.63 0.80 0.020 0.025 0.031
L2 1.20 1.35 1.50 0.047 0.053 0.059
L3 0.50

R 0.07 0.003
R1 0.07 0.003

Millimeters Inches

Min. Typ. Max. Min. Typ. Max.

0.019

ref

ref

Figure 13: Foot Print Dimensions (in millimeters)

1.82

1.38

2.03

1.10

0.50

0.71

0.75

Table 6: Ordering Information

Ordering type Marking Package Weight Base qty Delivery mode

STPS120M 120 STmite 15.5 mg 12000 Tape & reel

Table 7: Revision History

Date Revision Description of Changes

Jul-2003 2A Last update.

13-Sep-2004 3

STmite package dimensions reference A1 change: from
blank (min) to -0.05mm and from 0.10 (max) to 0.05mm.

5/6

STPS120M

Information furnished is believed to be accurate and reliable. However, STMicroelectronics assumes no responsibility for the consequences
of use of such information nor for any infringement of patents or other rights of third parties which may result from its use. No license is granted
by implication or otherwise under any patent or patent rights of STMicroelectronics. Specifications mentioned in this publication are subject
to change without notice. This publication supersedes and replaces all information previously supplied. STMicroelectronics products are not
authorized for use as critical components in life support devices or systems without express written approval of STMicroelectronics.

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